Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SUD50P04-23-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50p0423e3-datasheets-3248.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | No | e3 | MATTE TIN OVER NICKEL | GULL WING | 4 | Single | 3.1W | 1 | R-PSSO-G2 | 22 ns | 12ns | 9 ns | 36 ns | 8.2A | 16V | SILICON | DRAIN | AMPLIFIER | 40V | 40V | 3.1W Ta 45.4W Tc | 20A | 50A | 20 mJ | P-Channel | 1880pF @ 20V | 23m Ω @ 15A, 10V | 2V @ 250μA | 8.2A Ta 20A Tc | 65nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||
| SUD50N10-18P-E3 | Vishay Siliconix | $0.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n1018pe3-datasheets-3250.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 18.5MOhm | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | Single | 30 | 136.4W | 1 | FET General Purpose Power | 12 ns | 10ns | 8 ns | 18 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 3W Ta 136.4W Tc | 100V | N-Channel | 2600pF @ 50V | 18.5m Ω @ 15A, 10V | 5V @ 250μA | 8.2A Ta 50A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIR432DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir432dpt1ge3-datasheets-3206.pdf | PowerPAK® SO-8 | 5 | yes | EAR99 | YES | DUAL | C BEND | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-C5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 5W Ta 54W Tc | 8.6A | 40A | 0.0306Ohm | 14.5 mJ | N-Channel | 1170pF @ 50V | 30.6m Ω @ 8.6A, 10V | 4V @ 250μA | 28.4A Tc | 32nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIE862DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sie862dft1ge3-datasheets-3210.pdf | 10-PolarPAK® (U) | 4 | 10 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 10 | 30 | 1 | FET General Purpose Power | R-PDSO-N4 | 30 ns | 20ns | 15 ns | 40 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | 5.2W Ta 104W Tc | 30A | 0.0038Ohm | 80 mJ | N-Channel | 3100pF @ 15V | 3.2m Ω @ 20A, 10V | 2.2V @ 250μA | 50A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SIS424DN-T1-GE3 | Vishay Siliconix | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis424dnt1ge3-datasheets-3213.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 15 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 1 | FET General Purpose Power | S-XDSO-C5 | 15 ns | 13ns | 10 ns | 20 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.7W Ta 39W Tc | 60A | 0.0064Ohm | 45 mJ | N-Channel | 1200pF @ 10V | 6.4m Ω @ 19.6A, 10V | 2.5V @ 250μA | 35A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| SUD40N02-08-E3 | Vishay Siliconix | $0.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud40n0208e3-datasheets-3216.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.223mm | 2 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 71W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 120ns | 20 ns | 45 ns | 40A | 12V | 20V | SILICON | DRAIN | 600mV | 8.3W Ta 71W Tc | 0.0085Ohm | 20V | N-Channel | 2660pF @ 20V | 600 mV | 8.5m Ω @ 20A, 4.5V | 600mV @ 250μA (Min) | 40A Tc | 35nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||
| SIJ484DP-T1-GE3 | Vishay Siliconix | $3.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sij484dpt1ge3-datasheets-3219.pdf | PowerPAK® SO-8 | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | 260 | 40 | 5W | 1 | 22 ns | 13ns | 12 ns | 26 ns | 35A | 20V | 30V | 1.2V | 5W Ta 27.7W Tc | N-Channel | 1600pF @ 15V | 6.3m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIJ400DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sij400dpt1ge3-datasheets-3222.pdf | PowerPAK® SO-8 | 5 | Unknown | 8 | yes | EAR99 | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 8 | 40 | 69.4W | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G5 | 48 ns | 66ns | 20 ns | 49 ns | 32A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.2V | 5W Ta 69.4W Tc | 26.3A | 0.004Ohm | 30V | N-Channel | 7765pF @ 15V | 2.5 V | 4m Ω @ 20A, 10V | 2.5V @ 250μA | 32A Tc | 150nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| SQM110P04-04L-GE3 | Vishay Siliconix | $33.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm110p0404lge3-datasheets-3225.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 4 | 40 | 375W | 1 | Other Transistors | R-PSSO-G2 | 17 ns | 15ns | 45 ns | 112 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 375W Tc | 240A | P-Channel | 13980pF @ 20V | 4m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 330nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SUD25N04-25-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud25n0425e3-datasheets-3228.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 1.437803g | 1 | Single | 3W | 1 | TO-252, (D-Pak) | 510pF | 5 ns | 47ns | 5 ns | 15 ns | 25A | 20V | 40V | 3W Ta 33W Tc | 25mOhm | 40V | N-Channel | 510pF @ 25V | 25mOhm @ 25A, 10V | 3V @ 250μA | 25A Tc | 20nC @ 10V | 25 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SUD25N04-25-T4-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud25n0425e3-datasheets-3228.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 25A | 40V | 3W Ta 33W Tc | N-Channel | 510pF @ 25V | 25m Ω @ 25A, 10V | 3V @ 250μA | 25A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE804DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie804dft1ge3-datasheets-3195.pdf | 10-PolarPAK® (LH) | 10 | 5.2W | 1 | 10-PolarPAK® (LH) | 3nF | 37A | 20V | 150V | 5.2W Ta 125W Tc | 38mOhm | 150V | N-Channel | 3000pF @ 50V | 38mOhm @ 7.6A, 10V | 3V @ 250μA | 37A Tc | 105nC @ 10V | 38 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIE854DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -50°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie854dft1ge3-datasheets-2529.pdf | 10-PolarPAK® (L) | Lead Free | No SVHC | 14.2mOhm | 10 | No | Single | 5.2W | 1 | 10-PolarPAK® (L) | 3.1nF | 15 ns | 10ns | 10 ns | 30 ns | 13.2A | 20V | 100V | 100V | 2.5V | 5.2W Ta 125W Tc | 14.2mOhm | 100V | N-Channel | 3100pF @ 50V | 14.2mOhm @ 13.2A, 10V | 4.4V @ 250μA | 60A Tc | 75nC @ 10V | 14.2 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI7840BDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7840bdpt1e3-datasheets-3139.pdf | PowerPAK® SO-8 | 5 | 15 Weeks | 506.605978mg | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 1 | Single | 30 | 1 | FET General Purpose Powers | R-PDSO-C5 | 17 ns | 14ns | 14 ns | 39 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.8W Ta | 50A | 0.0085Ohm | 20 mJ | N-Channel | 8.5m Ω @ 16.5A, 10V | 3V @ 250μA | 11A Ta | 21nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SIE800DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie800dft1e3-datasheets-6364.pdf | 10-PolarPAK® (S) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 1 | FET General Purpose Powers | R-PDSO-N4 | 15ns | 20.6A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 5.2W Ta 104W Tc | 50A | 60A | 0.0072Ohm | 80 mJ | N-Channel | 1600pF @ 15V | 7.2m Ω @ 11A, 10V | 3V @ 250μA | 50A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIE844DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie844dft1e3-datasheets-3152.pdf | 10-PolarPAK® (U) | 4 | 10 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-N4 | 25 ns | 10ns | 10 ns | 25 ns | 20.3A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 25W Tc | 44.5A | 60A | 0.007Ohm | 31 mJ | 30V | N-Channel | 2150pF @ 15V | 7m Ω @ 12.1A, 10V | 3V @ 250μA | 44.5A Tc | 44nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI7866ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7866adpt1e3-datasheets-6244.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | Unknown | 2.4MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Power | R-XDSO-C5 | 18 ns | 105ns | 9 ns | 49 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 800mV | 5.4W Ta 83W Tc | 35A | 70A | 20V | N-Channel | 5415pF @ 10V | 2.4m Ω @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 125nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||
| SIE830DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | WFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie830dft1e3-datasheets-6381.pdf | 10-PolarPAK® (S) | 10 | No | Single | 5.2W | FET General Purpose Powers | 35 ns | 105ns | 95 ns | 70 ns | 27A | 12V | 5.2W Ta 104W Tc | 50A | 30V | N-Channel | 5500pF @ 15V | 4.2m Ω @ 16A, 10V | 2V @ 250μA | 50A Tc | 115nC @ 10V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIE836DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie836dft1ge3-datasheets-2516.pdf | 10-PolarPAK® (SH) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 15 ns | 10ns | 10 ns | 20 ns | 4.1A | 30V | SILICON | DRAIN SOURCE | SWITCHING | 5.2W Ta 104W Tc | 18.3A | 15A | 0.13Ohm | 1.25 mJ | 200V | N-Channel | 1200pF @ 100V | 130m Ω @ 4.1A, 10V | 4.5V @ 250μA | 18.3A Tc | 41nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| SIE816DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie816dft1ge3-datasheets-3162.pdf | 10-PolarPAK® (L) | Lead Free | 7.4mOhm | 10 | No | Single | 5.2W | 1 | 10-PolarPAK® (L) | 3.1nF | 22 ns | 10ns | 10 ns | 25 ns | 19.8A | 20V | 60V | 5.2W Ta 125W Tc | 7.4mOhm | 60V | N-Channel | 3100pF @ 30V | 7.4mOhm @ 19.8A, 10V | 4.4V @ 250μA | 60A Tc | 77nC @ 10V | 7.4 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI9434BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9434bdyt1e3-datasheets-6300.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | R-PDSO-G8 | 4.5A | 8V | SILICON | 1.3W Ta | MS-012AA | 0.04Ohm | 20V | P-Channel | 40m Ω @ 6.3A, 4.5V | 1.5V @ 250μA | 4.5A Ta | 18nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7888DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7888dpt1ge3-datasheets-3136.pdf | PowerPAK® SO-8 | 5.969mm | 1.0668mm | 5.0038mm | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 20 | 1.8W | 1 | FET General Purpose Power | R-XDSO-C5 | 10 ns | 11ns | 11 ns | 24 ns | 9.4A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.8W Ta | 50A | 20 mJ | N-Channel | 12m Ω @ 12.4A, 10V | 2V @ 250μA | 9.4A Ta | 10.5nC @ 5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||
| SI7886ADP-T1-GE3 | Vishay Siliconix | $1.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7886adpt1e3-datasheets-3150.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 4mOhm | 1 | Single | PowerPAK® SO-8 | 6.45nF | 17 ns | 14ns | 43 ns | 158 ns | 15A | 12V | 30V | 1.9W Ta | 4mOhm | 30V | N-Channel | 6450pF @ 15V | 4mOhm @ 25A, 10V | 1.5V @ 250μA | 15A Ta | 60nC @ 4.5V | 4 mΩ | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SI7682DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7682dpt1e3-datasheets-6650.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1 | FET General Purpose Power | R-XDSO-C5 | 18 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 5W Ta 27.5W Tc | 17.5A | 50A | 0.009Ohm | 30V | N-Channel | 1595pF @ 15V | 9m Ω @ 20A, 10V | 2.5V @ 250μA | 20A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI9410BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si9410bdyt1e3-datasheets-0261.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 506.605978mg | No SVHC | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | 10 ns | 15ns | 11 ns | 30 ns | 8.1A | 20V | SILICON | 30V | 30V | 1V | 1.5W Ta | 6.2A | 0.024Ohm | N-Channel | 1 V | 24m Ω @ 8.1A, 10V | 3V @ 250μA | 6.2A Ta | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SIE806DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie806dft1e3-datasheets-6367.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Powers | R-PDSO-N4 | 85 ns | 41.3A | 12V | SILICON | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 60A | 0.0021Ohm | 125 mJ | 30V | N-Channel | 13000pF @ 15V | 1.7m Ω @ 25A, 10V | 2V @ 250μA | 60A Tc | 250nC @ 10V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||
| SIE848DF-T1-E3 | Vishay Siliconix | $0.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie848dft1ge3-datasheets-2513.pdf | 10-PolarPAK® (L) | Lead Free | 2.2MOhm | 10 | No | Single | 5.2W | 1 | 10-PolarPAK® (L) | 6.1nF | 45 ns | 30ns | 40 ns | 70 ns | 43A | 20V | 30V | 5.2W Ta 125W Tc | 1.6mOhm | 30V | N-Channel | 6100pF @ 15V | 1.6mOhm @ 25A, 10V | 2.5V @ 250μA | 60A Tc | 138nC @ 10V | 1.6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI7856ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7856adpt1e3-datasheets-3144.pdf | PowerPAK® SO-8 | Lead Free | 5 | 3.7mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 21 ns | 15ns | 15 ns | 100 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 30V | N-Channel | 3.7m Ω @ 25A, 10V | 3V @ 250μA | 15A Ta | 55nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI7856ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7856adpt1e3-datasheets-3144.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.9W | 1 | FET General Purpose Powers | R-XDSO-C5 | 21 ns | 15ns | 30 ns | 100 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 0.0037Ohm | 30V | N-Channel | 3.7m Ω @ 25A, 10V | 3V @ 250μA | 15A Ta | 55nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI7886ADP-T1-E3 | Vishay Siliconix | $1.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7886adpt1e3-datasheets-3150.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 506.605978mg | 8 | 1 | Single | PowerPAK® SO-8 | 6.45nF | 17 ns | 14ns | 14 ns | 158 ns | 15A | 12V | 30V | 1.9W Ta | 4mOhm | N-Channel | 6450pF @ 15V | 4mOhm @ 25A, 10V | 1.5V @ 250μA | 15A Ta | 60nC @ 4.5V | 4 mΩ | 4.5V 10V | ±12V |
