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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUP40N10-30-GE3 | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 | 3 | 3 | EAR99 | No | SINGLE | 3 | 1 | 11 ns | 12ns | 12 ns | 30 ns | 38.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 3.1W Ta 89W Tc | TO-220AB | 75A | 61 mJ | N-Channel | 2400pF @ 25V | 30m Ω @ 15A, 10V | 4V @ 250μA | 38.5A Tc | 60nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFH8325TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/infineontechnologies-irfh8325trpbf-datasheets-4982.pdf | 8-PowerTDFN | 5.85mm | 1.17mm | 5mm | Lead Free | No SVHC | 5MOhm | 8 | No | 3.6W | Single | 3.6W | 1 | PQFN (5x6) | 2.487nF | 12 ns | 16ns | 7.1 ns | 14 ns | 21A | 20V | 30V | 1.8V | 24 ns | 5mOhm | 30V | N-Channel | 2487pF @ 10V | 1.8 V | 5mOhm @ 20A, 10V | 2.35V @ 50μA | 21A Ta 82A Tc | 32nC @ 10V | 5 mΩ | |||||||||||||||||||||||||||||||||||||||||
| SUP65P04-15-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup65p0415e3-datasheets-3513.pdf | TO-220-3 | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.75W | 1 | Other Transistors | 15 ns | 380ns | 140 ns | 75 ns | -65A | 20V | SILICON | DRAIN | -3V | 3.75W Ta 120W Tc | TO-220AB | 240A | 40V | P-Channel | 5400pF @ 25V | -3 V | 15m Ω @ 30A, 10V | 3V @ 250μA | 65A Tc | 130nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF3610SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3610strlpbf-datasheets-3829.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 333W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 55ns | 43 ns | 77 ns | 103A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 333W Tc | 460 mJ | N-Channel | 5380pF @ 25V | 4 V | 11.6m Ω @ 62A, 10V | 4V @ 250μA | 103A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| RJK0330DPB-01#J0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk0330dpb01j0-datasheets-3545.pdf | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | EAR99 | No | SINGLE | GULL WING | 1 | FET General Purpose Power | R-PSSO-G4 | 6.8 ns | 3.9ns | 5.4 ns | 50 ns | 45A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 55W Tc | 180A | 0.0039Ohm | N-Channel | 4300pF @ 10V | 2.7m Ω @ 22.5A, 10V | 45A Ta | 27nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRLHS6242TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlhs6242trpbf-datasheets-2714.pdf | 6-PowerVDFN | 6-PQFN (2x2) | 20V | N-Channel | 1110pF @ 10V | 11.7mOhm @ 8.5A, 4.5V | 1.1V @ 10μA | 10A Ta 12A Tc | 14nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP75P03-07-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sub75p0307e3-datasheets-7696.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 6.000006g | No SVHC | 7mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | 1 | Single | 187W | 1 | Other Transistors | 25 ns | 225ns | 210 ns | 150 ns | -75A | 20V | SILICON | DRAIN | 30V | -1V | 3.75W Ta 187W Tc | TO-220AB | 240A | -30V | P-Channel | 9000pF @ 25V | -3 V | 7m Ω @ 30A, 10V | 3V @ 250μA | 75A Tc | 240nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| PSMN1R9-25YLC,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | SC-100, SOT-669 | not_compliant | 4 | 2013-06-14 00:00:00 | 25V | 141W Tc | N-Channel | 3504pF @ 12V | 2.05m Ω @ 25A, 10V | 1.95V @ 1mA | 100A Tc | 57nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP36N20-54P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sup36n2054pe3-datasheets-3416.pdf | TO-220-3 | 3 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.12W | 1 | FET General Purpose Power | 16 ns | 170ns | 9 ns | 27 ns | 36A | 25V | 200V | SILICON | SWITCHING | 4.5V | 3.12W Ta 166W Tc | TO-220AB | 80A | 20 mJ | 200V | N-Channel | 3100pF @ 25V | 4.5 V | 53m Ω @ 20A, 15V | 4.5V @ 250μA | 36A Tc | 127nC @ 15V | 10V 15V | ±25V | ||||||||||||||||||||||||||||||||||||
| IRFH8337TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 3 (168 Hours) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/infineontechnologies-irfh8337tr2pbf-datasheets-3420.pdf | 8-PowerTDFN | 5.85mm | 1.17mm | 5mm | Lead Free | No SVHC | 12.8MOhm | 8 | No | 3.2W | Single | 3.2W | 1 | PQFN (5x6) | 790pF | 6.4 ns | 12ns | 4.1 ns | 5.7 ns | 12A | 20V | 30V | 1.8V | 18 ns | 12.8mOhm | 30V | N-Channel | 790pF @ 10V | 1.8 V | 12.8mOhm @ 16.2A, 10V | 2.35V @ 25μA | 12A Ta 35A Tc | 10nC @ 10V | 12.8 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRFH5220TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5220trpbf-datasheets-6361.pdf | 8-VQFN Exposed Pad | 6mm | 850μm | 5mm | Lead Free | No SVHC | 99.9MOhm | 8 | No | 3.6W | Single | 3.6W | 1 | PQFN (5x6) | 1.38nF | 7.2 ns | 4.7ns | 3.4 ns | 14 ns | 3.8A | 20V | 200V | 59 ns | 99.9mOhm | 200V | N-Channel | 1380pF @ 50V | 5 V | 99.9mOhm @ 5.8A, 10V | 5V @ 100μA | 3.8A Ta 20A Tc | 30nC @ 10V | 99.9 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| SUM70N03-09CP-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum70n0309cpe3-datasheets-3441.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 1.437803g | No SVHC | 9.5mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 80ns | 8 ns | 22 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.75W Ta 93W Tc | 30V | N-Channel | 2200pF @ 25V | 9.5m Ω @ 20A, 10V | 3V @ 250μA | 70A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFH8334TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 3 (168 Hours) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/infineontechnologies-irfh8334trpbf-datasheets-3413.pdf | 8-PowerTDFN | 5.85mm | 1.17mm | 5mm | Lead Free | No SVHC | 9MOhm | 8 | No | 3.2W | Single | 3.2W | 1 | PQFN (5x6) | 1.18nF | 8.3 ns | 14ns | 4.6 ns | 7 ns | 14A | 20V | 30V | 1.8V | 20 ns | 9mOhm | 30V | N-Channel | 1180pF @ 10V | 1.8 V | 9mOhm @ 20A, 10V | 2.35V @ 25μA | 14A Ta 44A Tc | 15nC @ 10V | 9 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRLHS6342TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/infineontechnologies-irlhs6342trpbf-datasheets-3444.pdf | 6-PowerVDFN | 2.1mm | 950μm | 2.1mm | Lead Free | No SVHC | 15.5MOhm | 6 | No | 2.1W | Single | 2.1W | 1 | 6-PQFN (2x2) | 1.019nF | 4.9 ns | 13ns | 13 ns | 19 ns | 8.7A | 12V | 30V | 1.1V | 17 ns | 15.5mOhm | 30V | N-Channel | 1019pF @ 25V | 1.1 V | 15.5mOhm @ 8.5A, 4.5V | 1.1V @ 10μA | 8.7A Ta 19A Tc | 11nC @ 4.5V | 15.5 mΩ | |||||||||||||||||||||||||||||||||||||||||
| SUP60N02-4M5P-E3 | Vishay Siliconix | $4.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup60n024m5pe3-datasheets-3356.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | No | 1 | Single | TO-220AB | 5.95nF | 15 ns | 7ns | 8 ns | 35 ns | 60A | 20V | 20V | 3.75W Ta 120W Tc | 4.5mOhm | 20V | N-Channel | 5950pF @ 10V | 4.5mOhm @ 20A, 10V | 3V @ 250μA | 60A Tc | 50nC @ 4.5V | 4.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SUM110N03-03P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0303pe3-datasheets-3360.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | No | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | 40 | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 20ns | 25 ns | 90 ns | 110A | 20V | SILICON | DRAIN | 3.75W Ta 375W Tc | 400A | 0.0026Ohm | 30V | N-Channel | 12100pF @ 25V | 2.6m Ω @ 30A, 10V | 3V @ 250μA | 110A Tc | 250nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SUP85N10-10P-GE3 | Vishay Siliconix | $3.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sup85n1010pge3-datasheets-3363.pdf | TO-220-3 | 3 | 3 | EAR99 | No | SINGLE | 3 | 3.75W | 1 | FET General Purpose Power | 15 ns | 12ns | 8 ns | 25 ns | 85A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 3.75W Ta 227W Tc | TO-220AB | 240A | N-Channel | 4660pF @ 50V | 3 V | 10m Ω @ 20A, 10V | 4.5V @ 250μA | 85A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFH5204TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5204trpbf-datasheets-5889.pdf | 8-VQFN Exposed Pad | 6mm | 900μm | 5mm | Lead Free | No SVHC | 4.3MOhm | 8 | No | 3.6W | Single | 3.6W | 1 | PQFN (5x6) | 2.46nF | 8.4 ns | 14ns | 8.3 ns | 18 ns | 22A | 20V | 40V | 4V | 45 ns | 4.3mOhm | 40V | N-Channel | 2460pF @ 25V | 4 V | 4.3mOhm @ 50A, 10V | 4V @ 100μA | 22A Ta 100A Tc | 65nC @ 10V | 4.3 mΩ | |||||||||||||||||||||||||||||||||||||||||
| SUP90N03-03-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup90n0303e3-datasheets-3373.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 6.000006g | 2.9MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3 | 1 | Single | 3.75W | 1 | FET General Purpose Power | 55 ns | 180ns | 12 ns | 55 ns | 28.8A | 20V | SILICON | DRAIN | SWITCHING | 30V | 3.75W Ta 250W Tc | TO-220AB | 90A | 90A | 64.8 mJ | N-Channel | 12065pF @ 15V | 2.9m Ω @ 28.8A, 10V | 2.5V @ 250μA | 90A Tc | 257nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SUP45N03-13L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup45n0313le3-datasheets-3378.pdf | TO-220-3 | Unknown | 3 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 88W | 1 | FET General Purpose Power | 11 ns | 9ns | 11 ns | 38 ns | 45A | 10V | 88W Tc | 30V | N-Channel | 2730pF @ 25V | 3 V | 13m Ω @ 45A, 10V | 3V @ 250μA | 45A Tc | 70nC @ 10V | 4.5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5834NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-nvmfs5834nlwft1g-datasheets-1921.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 5 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | Single | 3W | 1 | FET General Purpose Power | 10 ns | 56.4ns | 6.6 ns | 17.4 ns | 14A | 20V | SILICON | DRAIN | 40V | 40V | 3.6W Ta 107W Tc | 276A | 48 mJ | N-Channel | 1231pF @ 20V | 9.3m Ω @ 20A, 10V | 3V @ 250μA | 14A Ta 75A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SUP85N02-03-E3 | Vishay Siliconix | $5.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup85n0203e3-datasheets-3385.pdf | TO-220-3 | 3 | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 250W | 1 | FET General Purpose Power | 20 ns | 200ns | 320 ns | 450 ns | 85A | 8V | SILICON | DRAIN | 450mV | 250W Tc | TO-220AB | 240A | 20V | N-Channel | 21250pF @ 20V | 450 mV | 3m Ω @ 30A, 4.5V | 450mV @ 2mA (Min) | 85A Tc | 200nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SUV85N10-10-E3 | Vishay Siliconix | $0.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-suv85n1010e3-datasheets-3398.pdf | TO-220-3 | 3 | 10.5mOhm | yes | EAR99 | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 90ns | 130 ns | 55 ns | 85A | 20V | SILICON | SWITCHING | 3.75W Ta 250W Tc | TO-262AA | 240A | 100V | N-Channel | 6550pF @ 25V | 10.5m Ω @ 30A, 10V | 3V @ 250μA | 85A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SUD50N03-16P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0316pe3-datasheets-3289.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1.437803g | 16mOhm | 1 | Single | 15A | 20V | 30V | 6.5W Ta 40.8W Tc | N-Channel | 1150pF @ 25V | 16m Ω @ 15A, 10V | 3V @ 250μA | 13nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP90N08-6M8P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup90n086m8pe3-datasheets-3325.pdf | TO-220-3 | 3 | No SVHC | 3 | EAR99 | No | 3 | Single | 3.75W | 1 | FET General Purpose Power | 16 ns | 11ns | 10 ns | 24 ns | 90A | 20V | 75V | SILICON | SWITCHING | 3.75W Ta 272W Tc | TO-220AB | 240A | 0.0068Ohm | 75V | N-Channel | 4620pF @ 30V | 6.8m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 115nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SUP40P10-43-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup40p1043ge3-datasheets-3330.pdf | TO-220-3 | 3 | 3 | EAR99 | No | SINGLE | 3 | 2W | 1 | Other Transistors | 36A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 100V | 2W Ta 125W Tc | TO-220AB | 40A | P-Channel | 4600pF @ 50V | 43m Ω @ 10A, 10V | 3V @ 250μA | 36A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5215TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5215trpbf-datasheets-4211.pdf | 8-VQFN Exposed Pad | 6mm | 850μm | 5mm | Lead Free | No SVHC | 58MOhm | 8 | No | 3.6W | Single | 3.6W | 1 | PQFN (5x6) | 1.35nF | 6.7 ns | 6.3ns | 2.9 ns | 11 ns | 5A | 20V | 150V | 60 ns | 58mOhm | 150V | N-Channel | 1350pF @ 50V | 5 V | 58mOhm @ 16A, 10V | 5V @ 100μA | 5A Ta 27A Tc | 32nC @ 10V | 58 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| SUP85N04-03-E3 | Vishay Siliconix | $0.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup85n0403e3-datasheets-3341.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 250W | 1 | FET General Purpose Power | 15 ns | 90ns | 125 ns | 95 ns | 85A | 20V | SILICON | DRAIN | 3.75W Ta 250W Tc | TO-220AB | 240A | 40V | N-Channel | 6860pF @ 25V | 3.5m Ω @ 30A, 10V | 3V @ 250μA | 85A Tc | 250nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SUP60N06-12P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup60n0612pge3-datasheets-3346.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 6.000006g | 12mOhm | 3 | EAR99 | No | 3 | 1 | Single | 3.25W | 1 | FET General Purpose Power | 11 ns | 11ns | 8 ns | 16 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.25W Ta 100W Tc | TO-220AB | 80A | 80 mJ | N-Channel | 1970pF @ 30V | 12m Ω @ 30A, 10V | 4.5V @ 250μA | 60A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SUP60N10-16L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sup60n1016le3-datasheets-3351.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 6.000006g | 16mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | 1 | Single | 150W | 1 | FET General Purpose Power | 12 ns | 90ns | 130 ns | 55 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 100V | 150W Tc | TO-220AB | N-Channel | 3820pF @ 25V | 16m Ω @ 30A, 10V | 3V @ 250μA | 60A Tc | 110nC @ 10V | 4.5V 10V | ±20V |
