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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIE844DF-T1-E3 | Vishay Siliconix | $7.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie844dft1e3-datasheets-3152.pdf | 10-PolarPAK® (U) | 4 | No SVHC | 10 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 25 ns | 10ns | 10 ns | 25 ns | 44.5A | 20V | 30V | SILICON | DRAIN | SWITCHING | 3V | 5.2W Ta 25W Tc | 60A | 0.007Ohm | 31 mJ | 30V | N-Channel | 2150pF @ 15V | 3 V | 7m Ω @ 12.1A, 10V | 3V @ 250μA | 44.5A Tc | 44nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| SI7882DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7882dpt1ge3-datasheets-0309.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | No SVHC | 5.5mOhm | 8 | yes | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | R-PDSO-C5 | 28 ns | 32ns | 32 ns | 82 ns | 13A | 8V | 12V | SILICON | DRAIN | SWITCHING | 1.4V | 1.9W Ta | 50A | 7.2 mJ | N-Channel | 1.4 V | 5.5m Ω @ 17A, 4.5V | 1.4V @ 250μA | 13A Ta | 30nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||
| SIE726DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie726dft1e3-datasheets-3160.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 60 ns | 35ns | 30 ns | 55 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 80A | 0.0033Ohm | 125 mJ | 30V | N-Channel | 7400pF @ 15V | 2.4m Ω @ 25A, 10V | 3V @ 250μA | 60A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SIE816DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie816dft1ge3-datasheets-3162.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Powers | R-XDSO-N4 | 22 ns | 10ns | 10 ns | 25 ns | 19.8A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 60A | 60A | 0.0074Ohm | 125 mJ | 60V | N-Channel | 3100pF @ 30V | 7.4m Ω @ 19.8A, 10V | 4.4V @ 250μA | 60A Tc | 77nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SI7888DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7888dpt1ge3-datasheets-3136.pdf | PowerPAK® SO-8 | 5 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1 | FET General Purpose Powers | R-XDSO-C5 | 10 ns | 11ns | 11 ns | 24 ns | 9.4A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 50A | 0.012Ohm | 20 mJ | 30V | N-Channel | 12m Ω @ 12.4A, 10V | 2V @ 250μA | 9.4A Ta | 10.5nC @ 5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||
| SI7840BDP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7840bdpt1e3-datasheets-3139.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | 8.5mOhm | yes | EAR99 | FAST SWITCHING | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-C5 | 17 ns | 14ns | 14 ns | 39 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.8W Ta | 50A | 20 mJ | N-Channel | 8.5m Ω @ 16.5A, 10V | 3V @ 250μA | 11A Ta | 21nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| SI8417DB-T2-E1 | Vishay Siliconix | $0.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8417dbt2e1-datasheets-3142.pdf | 6-MICRO FOOT®CSP | 6 | No | 2.9W | 6-Micro Foot™ (1.5x1) | 2.22nF | 14 ns | 25ns | 240 ns | 380 ns | -14.5A | 8V | 12V | 2.9W Ta 6.57W Tc | 21mOhm | -12V | P-Channel | 2220pF @ 6V | 21mOhm @ 1A, 4.5V | 900mV @ 250μA | 14.5A Tc | 57nC @ 5V | 21 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| SIR878DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir878dpt1ge3-datasheets-2635.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | Unknown | 8 | yes | EAR99 | Tin | No | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | R-PDSO-C5 | 40A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 5W Ta 44.5W Tc | 20 mJ | 100V | N-Channel | 1250pF @ 50V | 14m Ω @ 15A, 10V | 2.8V @ 250μA | 40A Tc | 43nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIS414DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sis414dnt1ge3-datasheets-2688.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 15 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.4W | 1 | FET General Purpose Power | S-PDSO-C5 | 7 ns | 13ns | 8 ns | 21 ns | 20A | 12V | SILICON | DRAIN | SWITCHING | 30V | 30V | 600mV | 3.4W Ta 31W Tc | 50A | 5 mJ | N-Channel | 795pF @ 15V | 16m Ω @ 10A, 4.5V | 1.5V @ 250μA | 20A Tc | 33nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||
| SI7454CDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7454cdpt1ge3-datasheets-2343.pdf | PowerPAK® SO-8 | 5 | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 30 | 4.1W | 1 | FET General Purpose Powers | R-XDSO-C5 | 10 ns | 12ns | 10 ns | 17 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 1.2V | 4.1W Ta 29.7W Tc | 40A | 0.0305Ohm | N-Channel | 580pF @ 50V | 30.5m Ω @ 10A, 10V | 2.8V @ 250μA | 22A Tc | 19.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI3443DVTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-si3443dvtrpbf-datasheets-1933.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.0988mm | 990.6μm | 1.7mm | Lead Free | No SVHC | 65mOhm | 6 | No | 2W | 1 | Micro6™(TSOP-6) | 1.079nF | 12 ns | 33ns | 72 ns | 70 ns | -4.4A | 12V | -20V | 20V | -1.2V | 2W Ta | 65mOhm | -20V | P-Channel | 1079pF @ 10V | -1.2 V | 65mOhm @ 4.4A, 4.5V | 1.2V @ 250μA | 4.4A Ta | 15nC @ 4.5V | 65 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| SIS452DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis452dnt1ge3-datasheets-2639.pdf | PowerPAK® 1212-8 | 5 | 15 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Power | S-PDSO-C5 | 20 ns | 12ns | 10 ns | 25 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 3.8W Ta 52W Tc | 45 mJ | 12V | N-Channel | 1700pF @ 6V | 3.25m Ω @ 20A, 10V | 2.2V @ 250μA | 35A Tc | 41nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SIS456DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis456dnt1ge3-datasheets-4722.pdf | PowerPAK® 1212-8 | 5 | 15 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Power | S-PDSO-C5 | 20 ns | 25ns | 12 ns | 25 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.8W Ta 52W Tc | 30V | N-Channel | 1800pF @ 15V | 5.1m Ω @ 20A, 10V | 2.2V @ 250μA | 35A Tc | 55nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SIE878DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie878dft1ge3-datasheets-2596.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 10 | 1 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N4 | 15 ns | 15ns | 12 ns | 22 ns | 45A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 5.2W Ta 25W Tc | 0.0068Ohm | 25V | N-Channel | 1400pF @ 12.5V | 5.2m Ω @ 20A, 10V | 2.2V @ 250μA | 45A Tc | 36nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI1473DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1473dht1e3-datasheets-8072.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 7.512624mg | Unknown | 100MOhm | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.5W | 1 | Other Transistors | 2.8A | 20V | SILICON | SWITCHING | 30V | 1.5W Ta 2.78W Tc | 2.7A | 8A | -30V | P-Channel | 365pF @ 15V | -1 V | 100m Ω @ 2A, 10V | 3V @ 250μA | 2.7A Tc | 6.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SIE836DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie836dft1ge3-datasheets-2516.pdf | 10-PolarPAK® (SH) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 15 ns | 10ns | 10 ns | 20 ns | 4.1A | 30V | SILICON | DRAIN SOURCE | SWITCHING | 5.2W Ta 104W Tc | 18.3A | 15A | 0.13Ohm | 1.25 mJ | 200V | N-Channel | 1200pF @ 100V | 130m Ω @ 4.1A, 10V | 4.5V @ 250μA | 18.3A Tc | 41nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| SIE848DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sie848dft1ge3-datasheets-2513.pdf | 10-PolarPAK® (L) | 4 | Unknown | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 30 | 125W | 1 | FET General Purpose Power | R-PDSO-N4 | 45 ns | 30ns | 40 ns | 70 ns | 43A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 1.8V | 5.2W Ta 125W Tc | 0.0022Ohm | 30V | N-Channel | 6100pF @ 15V | 1.8 V | 1.6m Ω @ 25A, 10V | 2.5V @ 250μA | 60A Tc | 138nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SIR838DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir838dpt1ge3-datasheets-2564.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 40 | 5.4W | 1 | FET General Purpose Powers | R-XDSO-C5 | 16 ns | 11ns | 10 ns | 23 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5.4W Ta 96W Tc | 60A | 0.033Ohm | 45 mJ | 150V | N-Channel | 2075pF @ 75V | 33m Ω @ 8.3A, 10V | 4V @ 250μA | 35A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIR876DP-T1-GE3 | Vishay Siliconix | $9.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir876dpt1ge3-datasheets-2553.pdf | PowerPAK® SO-8 | 5 | Unknown | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | Single | 40 | 5W | 1 | FET General Purpose Powers | R-XDSO-C5 | 28 ns | 31ns | 17 ns | 36 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 5W Ta 62.5W Tc | 100V | N-Channel | 1640pF @ 50V | 10.8m Ω @ 20A, 10V | 2.8V @ 250μA | 40A Tc | 48nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI5433BDC-T1-GE3 | Vishay Siliconix | $0.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5433bdct1e3-datasheets-8454.pdf | 8-SMD, Flat Lead | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Other Transistors | 12 ns | 25ns | 55 ns | 80 ns | -5A | 8V | SILICON | 20V | 1.3W Ta | 0.037Ohm | -20V | P-Channel | 37m Ω @ 4.8A, 4.5V | 1V @ 250μA | 4.8A Ta | 22nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| SIR412DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sir412dpt1ge3-datasheets-2592.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.9W | 1 | FET General Purpose Power | R-PDSO-C5 | 13 ns | 13ns | 10 ns | 13 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3.9W Ta 15.6W Tc | 50A | 25V | N-Channel | 600pF @ 10V | 12m Ω @ 10A, 10V | 2.5V @ 250μA | 20A Tc | 16nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIJ458DP-T1-GE3 | Vishay Siliconix | $4.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sij458dpt1ge3-datasheets-2581.pdf | PowerPAK® SO-8 | 4 | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 8 | 1 | 40 | 5W | 1 | R-PSSO-G4 | 38 ns | 44ns | 24 ns | 49 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 1V | 5W Ta 69.4W Tc | 35.5A | 0.0022Ohm | N-Channel | 4810pF @ 15V | 1 V | 2.2m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 122nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| SIR408DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sir408dpt1ge3-datasheets-2568.pdf | PowerPAK® SO-8 | 8 | 506.605978mg | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 1 | FET General Purpose Power | R-XDSO-C8 | 20 ns | 28ns | 11 ns | 30 ns | 21.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 4.8W Ta 44.6W Tc | 50A | 70A | 0.0063Ohm | N-Channel | 1230pF @ 15V | 6.3m Ω @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 33nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI6467BDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6467bdqt1e3-datasheets-6035.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.05W | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.05W | 1 | Other Transistors | 45 ns | 85ns | 85 ns | 220 ns | -8A | 8V | 12V | P-Channel | 12.5m Ω @ 8A, 4.5V | 850mV @ 450μA | 6.8A Ta | 70nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||
| SIE854DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie854dft1ge3-datasheets-2529.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 15 ns | 10ns | 10 ns | 30 ns | 13.2A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 60A | 60A | 80 mJ | 100V | N-Channel | 3100pF @ 50V | 14.2m Ω @ 13.2A, 10V | 4.4V @ 250μA | 60A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI8473EDB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8473edbt1e1-datasheets-2419.pdf | 4-XFBGA, CSPBGA | 4 | Unknown | 4 | yes | EAR99 | No | Pure Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 1 | Single | 30 | 1 | Other Transistors | -7.1A | 12V | SILICON | SWITCHING | 20V | -1.5V | 1.1W Ta 2.7W Tc | 0.055Ohm | -20V | P-Channel | 41m Ω @ 1A, 4.5V | 1.5V @ 250μA | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| SIE860DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie860dft1ge3-datasheets-2541.pdf | 10-PolarPAK® (M) | 4 | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 35 ns | 20ns | 30 ns | 50 ns | 38A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 5.2W Ta 104W Tc | 60A | 80A | N-Channel | 4500pF @ 15V | 2.1m Ω @ 21.7A, 10V | 2.5V @ 250μA | 60A Tc | 105nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIB455EDK-T1-GE3 | Vishay Siliconix | $4.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib455edkt1ge3-datasheets-2439.pdf | PowerPAK® SC-75-6L | 3 | 6 | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | 6 | Single | NOT SPECIFIED | 13W | 1 | Other Transistors | Not Qualified | S-XDSO-N3 | 3.2 ns | 7.8A | 10V | SILICON | DRAIN | SWITCHING | 12V | 2.4W Ta 13W Tc | 9A | 25A | 0.027Ohm | -12V | P-Channel | 27m Ω @ 5.6A, 4.5V | 1V @ 250μA | 9A Tc | 30nC @ 8V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||
| SIA425EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia425edjt1ge3-datasheets-2443.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 6 | 6 | yes | EAR99 | unknown | DUAL | NO LEAD | 260 | 6 | 40 | 2.9W | 1 | Other Transistors | Not Qualified | 10 ns | 4.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 20V | 20V | 2.9W Ta 15.6W Tc | P-Channel | 60m Ω @ 4.2A, 4.5V | 1V @ 250μA | 4.5A Tc | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| SI7774DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7774dpt1ge3-datasheets-2402.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | No SVHC | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1V | 5W Ta 48W Tc | N-Channel | 2630pF @ 15V | 3.8m Ω @ 15A, 10V | 2.2V @ 250μA | 60A Tc | 66nC @ 10V | 4.5V 10V | ±20V |
