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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | JESD-609 Code | Terminal Finish | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4829DY-T1-GE3 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4829dyt1e3-datasheets-6923.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 30 | 1 | Not Qualified | 2A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2W Ta 3.1W Tc | 2A | 0.215Ohm | P-Channel | 210pF @ 10V | 215m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | 2A Tc | 8nC @ 10V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| SI5402BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5402bdct1e3-datasheets-8444.pdf | 8-SMD, Flat Lead | 8 | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 30 | 1.3W | 1 | FET General Purpose Powers | 10 ns | 10ns | 10 ns | 27 ns | 6.1A | 20V | SILICON | 1V | 1.3W Ta | 4.9A | 0.035Ohm | 30V | N-Channel | 35m Ω @ 4.9A, 10V | 3V @ 250μA | 4.9A Ta | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI4446DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4446dyt1e3-datasheets-8321.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.1W | 1 | 7 ns | 11ns | 8 ns | 27 ns | 3.9A | 12V | SILICON | SWITCHING | 40V | 40V | 1.6V | 1.1W Ta | 30A | 0.04Ohm | N-Channel | 700pF @ 20V | 40m Ω @ 5.2A, 10V | 1.6V @ 250μA | 3.9A Ta | 12nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||
| SI4102DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4102dyt1e3-datasheets-6209.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 4.8W | 1 | FET General Purpose Power | 10 ns | 10ns | 10 ns | 12 ns | 2.7A | 20V | SILICON | SWITCHING | 2V | 2.4W Ta 4.8W Tc | 0.0027A | 100V | N-Channel | 370pF @ 50V | 158m Ω @ 2.7A, 10V | 4V @ 250μA | 3.8A Tc | 11nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||
| SI1400DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1400dlt1e3-datasheets-7906.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 13 Weeks | 7.512624mg | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 568mW | 1 | FET General Purpose Powers | 10 ns | 30ns | 8 ns | 14 ns | 1.6A | 12V | SILICON | 20V | 20V | 568mW Ta | N-Channel | 150m Ω @ 1.7A, 4.5V | 600mV @ 250μA (Min) | 1.6A Ta | 4nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| SI4418DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4418dyt1e3-datasheets-8315.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.5W | 1 | 15 ns | 15ns | 20 ns | 40 ns | 2.3A | 20V | SILICON | SWITCHING | 1.5W Ta | 0.0023A | 200V | N-Channel | 130m Ω @ 3A, 10V | 4V @ 250μA | 2.3A Ta | 30nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI1471DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1471dht1e3-datasheets-8016.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | 6 | 15 Weeks | 7.512624mg | 70 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1 | Other Transistors | R-PDSO-G6 | 4 ns | 23 ns | 2.8A | 12V | SILICON | SWITCHING | 30V | 30V | 1.5W Ta 2.78W Tc | P-Channel | 445pF @ 15V | 100m Ω @ 2A, 10V | 1.6V @ 250μA | 2.7A Tc | 9.8nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||
| SI1426DH-T1-GE3 | Vishay Siliconix | $0.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1426dht1e3-datasheets-7955.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | Single | 30 | 1W | 1 | FET General Purpose Power | 10 ns | 12ns | 9 ns | 15 ns | 2.8A | 20V | SILICON | SWITCHING | 1W Ta | 0.075Ohm | 30V | N-Channel | 75m Ω @ 3.6A, 10V | 2.5V @ 250μA | 2.8A Ta | 3nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI4190DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4190dyt1ge3-datasheets-2143.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8.8MOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 7.8W | DUAL | GULL WING | 260 | 8 | Single | 30 | 7.8W | 1 | FET General Purpose Power | 12 ns | 13ns | 11 ns | 40 ns | 20A | 20V | SWITCHING | 100V | N-Channel | 2000pF @ 50V | 8.8m Ω @ 15A, 10V | 2.8V @ 250μA | 20A Tc | 58nC @ 10V | |||||||||||||||||||||||||||||||||||||||
| SI1422DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1422dht1ge3-datasheets-2026.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 7.512624mg | Unknown | 26mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.56W | 1 | FET General Purpose Power | 10 ns | 10ns | 10 ns | 20 ns | 4A | 8V | SILICON | SWITCHING | 1.56W Ta 2.8W Tc | 4A | 12V | N-Channel | 725pF @ 6V | 400 mV | 26m Ω @ 5.1A, 4.5V | 1V @ 250μA | 4A Tc | 20nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| SI2327DS-T1-GE3 | Vishay Siliconix | $0.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2327dst1e3-datasheets-8010.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | Single | 30 | 750mW | 1 | Other Transistors | -490mA | 20V | SILICON | SWITCHING | 200V | -4.5V | 750mW Ta | 2.45Ohm | -200V | P-Channel | 510pF @ 25V | -4.5 V | 2.35 Ω @ 500mA, 10V | 4.5V @ 250μA | 380mA Ta | 12nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFR3505TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3505pbf-datasheets-0154.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 13MOhm | 3 | No | 71A | 55V | Single | 140W | D-Pak | 2.03nF | 13 ns | 74ns | 54 ns | 43 ns | 71A | 20V | 55V | 140W Tc | 13mOhm | 55V | N-Channel | 2030pF @ 25V | 13mOhm @ 30A, 10V | 4V @ 250μA | 30A Tc | 93nC @ 10V | 13 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI1470DH-T1-GE3 | Vishay Siliconix | $0.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1470dht1e3-datasheets-7986.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | Unknown | 66MOhm | 6 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | 9 ns | 51ns | 7.1 ns | 18 ns | 3.8A | 12V | SILICON | SWITCHING | 1.5W Ta 2.8W Tc | 5 mJ | 30V | N-Channel | 510pF @ 15V | 600 mV | 66m Ω @ 3.8A, 4.5V | 1.6V @ 250μA | 5.1A Tc | 7.5nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| SI4004DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4004dyt1ge3-datasheets-2063.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 5W | DUAL | GULL WING | 260 | 8 | 30 | 1 | FET General Purpose Power | 15 ns | 12ns | 9 ns | 17 ns | 12A | 20V | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-Channel | 1280pF @ 10V | 13.8m Ω @ 11A, 10V | 2.5V @ 250μA | 12A Tc | 33nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||
| SI3475DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si3475dvt1e3-datasheets-8173.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 1.61Ohm | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 3.2W | DUAL | GULL WING | 260 | 6 | Single | 30 | 2W | 2 | Other Transistors | 29ns | 14 ns | 23 ns | 750mA | 20V | 0.95A | 200V | P-Channel | 500pF @ 50V | 1.61 Ω @ 900mA, 10V | 4V @ 250μA | 950mA Tc | 18nC @ 10V | ||||||||||||||||||||||||||||||||||||||||
| SI4104DY-T1-GE3 | Vishay Siliconix | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4104dyt1e3-datasheets-6191.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | Unknown | 8 | EAR99 | No | DUAL | GULL WING | 8 | Single | 5W | 1 | 9 ns | 9ns | 8 ns | 10 ns | 3.2A | 20V | SILICON | SWITCHING | 2.5V | 2.5W Ta 5W Tc | 4.6A | 4 mJ | 100V | N-Channel | 446pF @ 50V | 105m Ω @ 5A, 10V | 4.5V @ 250μA | 4.6A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI3805DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3805dvt1e3-datasheets-6320.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 19.986414mg | Unknown | 84mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 30 | 1.1W | 1 | Other Transistors | 18 ns | 40ns | 10 ns | 18 ns | -3.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | -1.5V | 1.1W Ta 1.4W Tc | 3A | -20V | P-Channel | 330pF @ 10V | -1.5 V | 84m Ω @ 3A, 10V | 1.5V @ 250μA | 3.3A Tc | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||
| SI3447CDV-T1-GE3 | Vishay Siliconix | $1.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3447cdvt1e3-datasheets-4184.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 15 Weeks | 19.986414mg | 36MOhm | 6 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 6 | 1 | Single | 2W | 1 | Other Transistors | 20 ns | 40ns | 20 ns | 35 ns | 6.3A | 8V | SILICON | SWITCHING | 12V | 2W Ta 3W Tc | 7.8A | P-Channel | 910pF @ 6V | 36m Ω @ 6.3A, 4.5V | 1V @ 250μA | 7.8A Tc | 30nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| SI1403CDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1403cdlt1ge3-datasheets-1941.pdf | 6-TSSOP, SC-88, SOT-363 | 2.05mm | 900μm | 1.25mm | Lead Free | 6 | 7.512624mg | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 6 | 1 | 600mW | 1 | Other Transistors | 18 ns | 26ns | 18 ns | 30 ns | 2.1A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600mV | 600mW Ta 900mW Tc | 20V | P-Channel | 281pF @ 10V | 140m Ω @ 1.6A, 4.5V | 1.5V @ 250μA | 2.1A Tc | 8nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| IRFZ24NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irfz24nstrrpbf-datasheets-7326.pdf | 55V | 17A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.65mm | Contains Lead | 2 | 70mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.8W | 1 | R-PSSO-G2 | 4.9 ns | 34ns | 27 ns | 19 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 3.8W Ta 45W Tc | 68A | 55V | N-Channel | 370pF @ 25V | 70m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI1406DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1406dht1ge3-datasheets-1976.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 30 | 1W | 1 | FET General Purpose Powers | 27 ns | 47ns | 29 ns | 54 ns | 3.1A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1W Ta | N-Channel | 65m Ω @ 3.9A, 4.5V | 1.2V @ 250μA | 3.1A Ta | 7.5nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| SI1417EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1417edht1e3-datasheets-7948.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 30 | 1W | 1 | Other Transistors | 600 ns | 1.4μs | 4.9 μs | 4.9 μs | 2.7A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 1W Ta | 0.085Ohm | P-Channel | 85m Ω @ 3.3A, 4.5V | 450mV @ 250μA (Min) | 2.7A Ta | 8nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| IRF7807ATRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/infineontechnologies-irf7807trpbf-datasheets-8459.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 25MOhm | 8 | No | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 12 ns | 17ns | 6 ns | 25 ns | 8.3A | 12V | SILICON | SWITCHING | 2.5W Ta | 66A | 30V | N-Channel | 25m Ω @ 7A, 4.5V | 1V @ 250μA | 8.3A Ta | 17nC @ 5V | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| IRF7604TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7604trpbf-datasheets-1664.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Lead Free | No SVHC | 90mOhm | 8 | No | Single | 1.8W | 1 | Micro8™ | 590pF | 17 ns | 53ns | 38 ns | 31 ns | -3.6A | 12V | 20V | -700mV | 1.8W Ta | 90mOhm | -20V | P-Channel | 590pF @ 15V | -700 mV | 90mOhm @ 2.4A, 4.5V | 700mV @ 250μA | 3.6A Ta | 20nC @ 4.5V | 90 mΩ | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| IRFR3504TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu3504pbf-datasheets-0091.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | Single | 140W | D-Pak | 2.15nF | 53ns | 22 ns | 87A | 40V | 140W Tc | 9.2mOhm | 40V | N-Channel | 2150pF @ 25V | 9.2mOhm @ 30A, 10V | 4V @ 250μA | 30A Tc | 71nC @ 10V | 9.2 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7828TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | /files/infineontechnologies-irf7828pbf-datasheets-0036.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | 2.5W | 1 | 8-SO | 1.01nF | 6.3 ns | 2.7ns | 7.3 ns | 9.7 ns | 13.6A | 20V | 30V | 2.5W Ta | 12.5mOhm | 30V | N-Channel | 1010pF @ 15V | 12.5mOhm @ 10A, 4.5V | 1V @ 250μA | 13.6A Ta | 14nC @ 5V | 12.5 mΩ | 4.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFR3704ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irfr3704zpbf-datasheets-9266.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | Lead Free | 2 | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 48W | 1 | R-PSSO-G2 | 8.4 ns | 8.9ns | 12 ns | 4.9 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 48W Tc | TO-252AA | 240A | 0.0084Ohm | 20V | N-Channel | 1190pF @ 10V | 8.4m Ω @ 15A, 10V | 2.55V @ 250μA | 60A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRL1004STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irl1004spbf-datasheets-9027.pdf | 110A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 2 | 14 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 150W | 1 | R-PSSO-G2 | 16 ns | 210ns | 14 ns | 25 ns | 130A | 16V | SILICON | DRAIN | SWITCHING | 3.8W Ta 200W Tc | 520A | 0.0065Ohm | 700 mJ | 40V | N-Channel | 5330pF @ 25V | 6.5m Ω @ 78A, 10V | 1V @ 250μA | 130A Tc | 100nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||
| IRL8113STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irl8113pbf-datasheets-8524.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.65mm | Lead Free | 2 | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 110W | 1 | R-PSSO-G2 | 14 ns | 38ns | 5 ns | 18 ns | 105A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | 42A | 420A | 0.006Ohm | 220 mJ | 30V | N-Channel | 2840pF @ 15V | 6m Ω @ 21A, 10V | 2.25V @ 250μA | 105A Tc | 35nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF7706TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7706trpbf-datasheets-1895.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3.0988mm | 1.0414mm | 4.4958mm | Lead Free | 22MOhm | 8 | No | 1.51W | 1 | 8-TSSOP | 2.211nF | 17 ns | 46ns | 122 ns | 244 ns | -7A | 20V | 30V | 1.51W Ta | 36mOhm | -30V | P-Channel | 2211pF @ 25V | 22mOhm @ 7A, 10V | 2.5V @ 250μA | 7A Ta | 72nC @ 10V | 22 mΩ | 4.5V 10V | ±20V |
