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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTMKE4891NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmke4891nt1g-datasheets-1095.pdf | 5-ICEPAK | 3 | 5 | EAR99 | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-XBCC-N3 | 151A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 2.8W Ta 89W Tc | 26.7A | 210A | 0.0026Ohm | 184 mJ | N-Channel | 4360pF @ 15V | 2.6m Ω @ 29A, 10V | 2.4V @ 250μA | 26.7A Ta 151A Tc | 66nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NTD5867NL-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ntd5867nlt4g-datasheets-7716.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 7.62mm | 2.38mm | Lead Free | 3 | No SVHC | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | NO | 4 | Single | 36W | 1 | R-PSIP-T3 | 6.5 ns | 12.6ns | 2.4 ns | 18.2 ns | 20A | 20V | SILICON | DRAIN | 1.8V | 36W Tc | 76A | 0.05Ohm | 60V | N-Channel | 675pF @ 25V | 20.6ns | 39m Ω @ 10A, 10V | 2.5V @ 250μA | 20A Tc | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| MTD5P06VT4GV | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mtd5p06vt4-datasheets-6398.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Single | 40W | 5A | 2.1W Ta 40W Tc | 60V | P-Channel | 510pF @ 25V | 450m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 20nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDD03N60ZT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/onsemiconductor-ndd03n60z1g-datasheets-5314.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 12 Weeks | No SVHC | 3.6Ohm | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | 4 | Single | 61W | 1 | 9 ns | 8ns | 10 ns | 16 ns | 2.6A | 30V | 4.5V | 61W Tc | 600V | N-Channel | 312pF @ 25V | 4.5 V | 3.6 Ω @ 1.2A, 10V | 4.5V @ 50μA | 2.6A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF6713STRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-irf6713str1pbf-datasheets-0675.pdf | DirectFET™ Isometric SQ | 4.826mm | 506μm | 3.95mm | 2 | 15 Weeks | 5 | EAR99 | Copper, Silver, Tin | No | BOTTOM | 42W | 1 | FET General Purpose Power | R-XBCC-N2 | 12 ns | 13ns | 6 ns | 9.2 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.2W Ta 42W Tc | 0.003Ohm | 34 mJ | 25V | N-Channel | 2880pF @ 13V | 3m Ω @ 22A, 10V | 2.4V @ 50μA | 22A Ta 95A Tc | 32nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFH5025TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5025trpbf-datasheets-6265.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | No SVHC | 8 | No | 3.6W | Single | 3.6W | 1 | 8-PQFN (5x6) | 2.15nF | 9 ns | 6.3ns | 6.1 ns | 17 ns | 32A | 20V | 250V | 20V | 83 ns | 100mOhm | 250V | N-Channel | 2150pF @ 50V | 20 V | 100mOhm @ 5.7A, 10V | 5V @ 150μA | 3.8A Ta | 56nC @ 10V | 100 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| NDF03N60ZG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndd03n60z1g-datasheets-5314.pdf | TO-220-3 Full Pack | 10.63mm | 16.12mm | 4.9mm | Lead Free | 3 | 4.535924g | No SVHC | 3.6Ohm | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 25W | 1 | FET General Purpose Powers | 9 ns | 8ns | 10 ns | 16 ns | 3.1A | 30V | SILICON | ISOLATED | 3.9V | 27W Tc | TO-220AB | 600V | N-Channel | 372pF @ 25V | 3.6 Ω @ 1.2A, 10V | 4.5V @ 50μA | 3.1A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| NDF02N60ZG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndd02n60z1g-datasheets-5213.pdf | TO-220-3 Full Pack | 10.63mm | 16.12mm | 4.9mm | Lead Free | 3 | 4.535924g | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 24W | 1 | FET General Purpose Powers | 9 ns | 7ns | 7 ns | 15 ns | 2.4A | 30V | SILICON | ISOLATED | 4V | 24W Tc | TO-220AB | 600V | N-Channel | 274pF @ 25V | 4.8 Ω @ 1A, 10V | 4.5V @ 50μA | 2.4A Tc | 10.1nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| RP1E100RPTR | ROHM Semiconductor | $4.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rp1e100rptr-datasheets-1069.pdf | 6-SMD, Flat Leads | 6 | 6 | yes | EAR99 | e2 | TIN COPPER | DUAL | 260 | 6 | 10 | 2W | 1 | Other Transistors | Not Qualified | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 2W Ta | 40A | -30V | P-Channel | 3600pF @ 10V | 12.6m Ω @ 10A, 10V | 2.5V @ 1mA | 10A Ta | 39nC @ 5V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTD5865NL-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ntd5865nlt4g-datasheets-4214.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 7.62mm | 2.38mm | Lead Free | 3 | 16MOhm | 4 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 4 | Single | 52W | 1 | FET General Purpose Power | R-PSIP-T3 | 8.4 ns | 12.4ns | 4.4 ns | 26 ns | 46A | 20V | SILICON | DRAIN | SWITCHING | 71W Tc | 36 mJ | 60V | N-Channel | 1400pF @ 25V | 16m Ω @ 20A, 10V | 2V @ 250μA | 46A Tc | 29nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NDF10N62ZG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-ndf10n62zg-datasheets-1076.pdf | TO-220-3 Full Pack | 10.63mm | 16.12mm | 4.9mm | Lead Free | 3 | 750MOhm | 3 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | 3 | Single | 36W | 1 | 15 ns | 31ns | 21 ns | 40 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 36W Tc | TO-220AB | 620V | N-Channel | 1425pF @ 25V | 750m Ω @ 5A, 10V | 4.5V @ 100μA | 10A Tc | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| NDD04N50Z-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndd04n50z1g-datasheets-1078.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 7.62mm | 2.38mm | Lead Free | 3 | 4 Weeks | 4 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 4 | Single | 61W | 1 | FET General Purpose Powers | R-PSIP-T3 | 9 ns | 9ns | 10 ns | 16 ns | 3A | 30V | SILICON | DRAIN | 61W Tc | 3A | 0.0027Ohm | 500V | N-Channel | 308pF @ 25V | 2.7 Ω @ 1.5A, 10V | 4.5V @ 50μA | 3A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRF9328PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf9328trpbf-datasheets-9452.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | No SVHC | 8 | EAR99 | Tin | No | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 19 ns | 57ns | 66 ns | 80 ns | -12A | 20V | SILICON | SWITCHING | 30V | -1.8V | 2.5W Ta | 76 ns | 96A | -30V | P-Channel | 1680pF @ 25V | -1.8 V | 11.9m Ω @ 12A, 10V | 2.4V @ 25μA | 12A Tc | 52nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NTD4960N-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ntd4960n35g-datasheets-1091.pdf | TO-251-3 Stub Leads, IPak | 6.73mm | 6.35mm | 2.38mm | Lead Free | 3 | 8MOhm | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.68W | 1 | Not Qualified | 12 ns | 20ns | 4 ns | 15 ns | 55A | 20V | SILICON | DRAIN | SWITCHING | 1.07W Ta 35.71W Tc | 8.9A | 51.2 mJ | 30V | N-Channel | 1300pF @ 15V | 8m Ω @ 30A, 10V | 2.5V @ 250μA | 8.9A Ta 55A Tc | 22nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRLU8259PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/infineontechnologies-irlr8259trpbf-datasheets-8082.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | No SVHC | 3 | No | 48W | I-PAK | 900pF | 8.4 ns | 38ns | 8.9 ns | 9.1 ns | 57A | 20V | 25V | 25V | 48W Tc | 26 ns | 12.9mOhm | 25V | N-Channel | 900pF @ 13V | 1.9 V | 8.7mOhm @ 21A, 10V | 2.35V @ 25μA | 57A Tc | 10nC @ 4.5V | 8.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| MTD6N15T4GV | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mtd6n15t4-datasheets-6404.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Single | 20W | DPAK | 1.2nF | 6A | 150V | 1.25W Ta 20W Tc | 300mOhm | 150V | N-Channel | 1200pF @ 25V | 300mOhm @ 3A, 10V | 4.5V @ 1mA | 6A Tc | 30nC @ 10V | 300 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDD03N50Z-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndd03n50z1g-datasheets-1020.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 7.62mm | 2.38mm | Lead Free | 3 | 4 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 4 | Single | 58W | 1 | FET General Purpose Power | R-PSIP-T3 | 9 ns | 7ns | 7 ns | 15 ns | 2.6A | 30V | SILICON | DRAIN | 58W Tc | 0.0033Ohm | 500V | N-Channel | 274pF @ 25V | 3.3 Ω @ 1.15A, 10V | 4.5V @ 50μA | 2.6A Tc | 10nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRF6720S2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6720s2tr1pbf-datasheets-0880.pdf | DirectFET™ Isometric S1 | 4.826mm | 558.8μm | 3.95mm | 4 | No | 17W | DIRECTFET S1 | 1.14nF | 13 ns | 35ns | 11 ns | 11 ns | 11A | 20V | 30V | 1.7W Ta 17W Tc | 12.8mOhm | 30V | N-Channel | 1140pF @ 15V | 8mOhm @ 11A, 10V | 2.35V @ 25μA | 11A Ta 35A Tc | 12nC @ 4.5V | 8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6794MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6794mtr1pbf-datasheets-5346.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | 5 | No | 100W | 1 | DIRECTFET™ MX | 4.42nF | 15 ns | 25ns | 9.6 ns | 9.7 ns | 32A | 20V | 25V | 2.8W Ta 100W Tc | 3mOhm | 25V | N-Channel | 4420pF @ 13V | 1.7mOhm @ 32A, 10V | 2.35V @ 100μA | 32A Ta 200A Tc | 47nC @ 4.5V | Schottky Diode (Body) | 1.7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RRH050P03TB1 | ROHM Semiconductor | $0.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8 | NOT SPECIFIED | NOT SPECIFIED | 2W | 5A | 30V | 650mW Ta | -30V | P-Channel | 850pF @ 10V | 50m Ω @ 5A, 10V | 2.5V @ 1mA | 5A Ta | 9.2nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6665TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6665-datasheets-0813.pdf | DirectFET™ Isometric SH | 6 | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | 42W | FET General Purpose Power | 7.4 ns | 2.8ns | 4.3 ns | 14 ns | 4.2A | 20V | Single | 2.2W Ta 42W Tc | 19A | 100V | N-Channel | 530pF @ 25V | 62m Ω @ 5A, 10V | 5V @ 250μA | 4.2A Ta 19A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3410TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3410trpbf-datasheets-1045.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | 3 | No | Single | 110W | D-Pak | 1.69nF | 12 ns | 27ns | 13 ns | 40 ns | 31A | 20V | 100V | 3W Ta 110W Tc | 39mOhm | 100V | N-Channel | 1690pF @ 25V | 39mOhm @ 18A, 10V | 4V @ 250μA | 31A Tc | 56nC @ 10V | 39 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6644 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6644tr1-datasheets-0873.pdf | DirectFET™ Isometric MN | 3 | EAR99 | 8541.29.00.95 | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-XBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2.8W Ta 89W Tc | 10.3A | 82A | 0.013Ohm | 220 mJ | N-Channel | 2210pF @ 25V | 13m Ω @ 10.3A, 10V | 4.8V @ 150μA | 10.3A Ta 60A Tc | 47nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| RP1A090ZPTR | ROHM Semiconductor | $1.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rp1a090zptr-datasheets-0930.pdf | 6-SMD, Flat Leads | 6 | 6 | yes | EAR99 | e2 | TIN COPPER | DUAL | 260 | 6 | 10 | 2W | 1 | Other Transistors | Not Qualified | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 2W Ta | 9A | 0.012Ohm | -12V | P-Channel | 7400pF @ 6V | 12m Ω @ 9A, 4.5V | 1V @ 1mA | 9A Ta | 59nC @ 4.5V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFR1018ETRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr1018etrpbf-datasheets-8025.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | 3 | Single | 110W | D-Pak | 2.29nF | 13 ns | 35ns | 46 ns | 55 ns | 56A | 20V | 60V | 110W Tc | 8.4mOhm | 60V | N-Channel | 2290pF @ 50V | 8.4mOhm @ 47A, 10V | 4V @ 100μA | 56A Tc | 69nC @ 10V | 8.4 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4010TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfsl4010pbf-datasheets-3814.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 21 ns | 86ns | 77 ns | 100 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 375W Tc | 720A | 0.0047Ohm | 100V | N-Channel | 9575pF @ 50V | 4.7m Ω @ 106A, 10V | 4V @ 250μA | 180A Tc | 215nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF8252PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf8252trpbf-datasheets-0612.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | compliant | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 2.5W Ta | 25A | 200A | 0.0027Ohm | 231 mJ | N-Channel | 5305pF @ 13V | 2.7m Ω @ 25A, 10V | 2.35V @ 100μA | 25A Ta | 53nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6644TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6644tr1-datasheets-0873.pdf | DirectFET™ Isometric MN | 3 | LOW CONDUCTION LOSS | YES | BOTTOM | NO LEAD | 1 | R-XBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 2.8W Ta 89W Tc | 10A | 228A | 0.013Ohm | 86 mJ | N-Channel | 2210pF @ 25V | 13m Ω @ 10.3A, 10V | 4.8V @ 150μA | 10.3A Ta 60A Tc | 47nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMS3015SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dms3015sss13-datasheets-0884.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 8 | 7 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.55W | 1 | FET General Purpose Power | 15.8 ns | 27.8ns | 13.6 ns | 29.7 ns | 11A | 20V | SILICON | SWITCHING | 1.5V | 1.55W Ta | 30V | N-Channel | 1276pF @ 15V | 11.9m Ω @ 11A, 10V | 2.5V @ 250μA | 11A Ta | 30.6nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||
| IRF9321PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf9321trpbf-datasheets-7644.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | No SVHC | 8 | EAR99 | No | DUAL | GULL WING | 1 | Single | 2.5W | 1 | Other Transistors | 150°C | 21 ns | 79ns | 145 ns | 185 ns | -15A | 20V | SILICON | SWITCHING | 30V | -1.8V | 2.5W Ta | 57 ns | 0.0072Ohm | -30V | P-Channel | 2590pF @ 25V | -1.8 V | 7.2m Ω @ 15A, 10V | 2.4V @ 50μA | 15A Ta | 98nC @ 10V | 4.5V 10V | ±20V |
