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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLU8256PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/infineontechnologies-irlr8256trpbf-datasheets-0064.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | No SVHC | 3 | No | 63W | I-PAK | 1.47nF | 9.7 ns | 46ns | 8.5 ns | 12 ns | 81A | 20V | 25V | 25V | 1.8V | 63W Tc | 29 ns | 8.5mOhm | 25V | N-Channel | 1470pF @ 13V | 1.8 V | 5.7mOhm @ 25A, 10V | 2.35V @ 25μA | 81A Tc | 15nC @ 4.5V | 5.7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFH5207TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-irfh5207tr2pbf-datasheets-0769.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | 5 | 9.6MOhm | 8 | EAR99 | Tin | No | DUAL | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 7.2 ns | 12ns | 7.1 ns | 20 ns | 71A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.6W Ta 105W Tc | 75V | N-Channel | 2474pF @ 25V | 9.6m Ω @ 43A, 10V | 4V @ 100μA | 13A Ta 71A Tc | 59nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRLR8729PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irlr8729trpbf-datasheets-9545.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | No SVHC | 8.9MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 55W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 47ns | 10 ns | 11 ns | 58A | 20V | SILICON | DRAIN | SWITCHING | 55W Tc | TO-252AA | 24 ns | 50A | 260A | 74 mJ | 30V | N-Channel | 1350pF @ 15V | 1.8 V | 8.9m Ω @ 25A, 10V | 2.35V @ 25μA | 58A Tc | 16nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| IRF9335PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf9335trpbf-datasheets-9652.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.98mm | 1.57mm | 3.99mm | 8 | No SVHC | 8 | EAR99 | No | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 9.7 ns | 19ns | 15 ns | 16 ns | -5.4A | 20V | SILICON | SWITCHING | 30V | -1.8V | 2.5W Ta | MS-012AA | 21 ns | 43A | 0.059Ohm | -30V | P-Channel | 386pF @ 25V | -1.8 V | 59m Ω @ 5.4A, 10V | 2.4V @ 10μA | 5.4A Ta | 14nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRLR8726PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr8726trpbf-datasheets-7098.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 12 Weeks | No SVHC | 5.8MOhm | 3 | EAR99 | No | Single | 75W | 12 ns | 49ns | 16 ns | 15 ns | 86A | 20V | 30V | 1.8V | 75W Tc | 36 ns | 30V | N-Channel | 2150pF @ 15V | 1.8 V | 5.8m Ω @ 25A, 10V | 2.35V @ 50μA | 86A Tc | 23nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF9393PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf9393trpbf-datasheets-6668.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 8 | 8 | EAR99 | No | DUAL | GULL WING | 2.5W | 1 | Other Transistors | 16 ns | 44ns | 49 ns | 55 ns | 9.2A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 2.5W Ta | 75A | -30V | P-Channel | 1110pF @ 25V | 13.3m Ω @ 9.2A, 20V | 2.4V @ 25μA | 9.2A Ta | 38nC @ 10V | 10V 20V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| IRF1405ZL-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/infineontechnologies-auxakf1405zs7p-datasheets-3012.pdf | TO-263-7 (Straight Leads) | 10.668mm | 7 | No | 230W | TO-263CA-7 | 5.36nF | 16 ns | 110ns | 82 ns | 48 ns | 120A | 20V | 55V | 230W Tc | 4.9mOhm | 55V | N-Channel | 5360pF @ 25V | 4.9mOhm @ 88A, 10V | 4V @ 150μA | 120A Tc | 230nC @ 10V | 4.9 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF6645 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | DirectFET™ Isometric SJ | 3 | EAR99 | e0 | TIN LEAD | YES | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-XBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3W Ta 42W Tc | 5.7A | 45A | 0.035Ohm | 29 mJ | N-Channel | 890pF @ 25V | 35m Ω @ 5.7A, 10V | 4.9V @ 50μA | 5.7A Ta 25A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| RCD040N25TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-rcd040n25tl-datasheets-0870.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | No | SINGLE | GULL WING | 20W | 1 | R-PSSO-G2 | 17 ns | 15ns | 12 ns | 20 ns | 4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20W Tc | 4A | 16A | 1Ohm | 1.61 mJ | 250V | N-Channel | 4A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFH5406TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | /files/infineontechnologies-irfh5406trpbf-datasheets-2944.pdf | 8-PowerVDFN | 5mm | 810μm | 5.0038mm | Lead Free | No SVHC | 8 | No | 3.6W | Single | 3.6W | 1 | 8-PQFN (5x6) | 1.256nF | 5.4 ns | 8.7ns | 3.5 ns | 12 ns | 40A | 20V | 60V | 4V | 30 ns | 14.4mOhm | 60V | N-Channel | 1256pF @ 25V | 2 V | 14.4mOhm @ 24A, 10V | 4V @ 50μA | 11A Ta 40A Tc | 35nC @ 10V | 2.3 mΩ | ||||||||||||||||||||||||||||||||||||||||
| IRF6614 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | DirectFET™ Isometric ST | 3 | EAR99 | YES | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-XBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 2.1W Ta 42W Tc | 12.7A | 102A | 0.0083Ohm | 22 mJ | N-Channel | 2560pF @ 20V | 8.3m Ω @ 12.7A, 10V | 2.25V @ 250μA | 12.7A Ta 55A Tc | 29nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFH5207TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5207tr2pbf-datasheets-0769.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | No SVHC | 8 | No | 3.6W | Single | 3.6W | 1 | 8-PQFN (5x6) | 2.474nF | 7.2 ns | 12ns | 7.1 ns | 20 ns | 71A | 20V | 75V | 2V | 39 ns | 9.6mOhm | 75V | N-Channel | 2474pF @ 25V | 2 V | 9.6mOhm @ 43A, 10V | 4V @ 100μA | 13A Ta 71A Tc | 59nC @ 10V | 9.6 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRF9388PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf9388trpbf-datasheets-8602.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | Lead Free | 8 | 8 | EAR99 | No | DUAL | GULL WING | 2.5W | 1 | Other Transistors | 19 ns | 57ns | 66 ns | 80 ns | 12A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 2.5W Ta | 96A | -30V | P-Channel | 1680pF @ 25V | 8.5m Ω @ 12A, 20V | 2.4V @ 25μA | 12A Ta | 52nC @ 10V | 10V 20V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| IRF9333PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf9333trpbf-datasheets-0027.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | 8 | No SVHC | 8 | EAR99 | No | DUAL | GULL WING | 1 | Single | 2.5W | 1 | Other Transistors | 150°C | 16 ns | 44ns | 49 ns | 55 ns | -9.2A | 20V | SILICON | SWITCHING | 30V | -1.8V | 2.5W Ta | 36 ns | 75A | -30V | P-Channel | 1110pF @ 25V | -1.8 V | 19.4m Ω @ 9.2A, 10V | 2.4V @ 25μA | 9.2A Ta | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF6633ATRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6633atr1pbf-datasheets-0806.pdf | DirectFET™ Isometric MU | 6.35mm | 700μm | 5.05mm | 3 | 3 | EAR99 | No | e1 | TIN SILVER COPPER | BOTTOM | 260 | 30 | 42W | 1 | FET General Purpose Power | 6.9 ns | 13ns | 7.7 ns | 8.4 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.3W Ta 42W Tc | 69A | 0.0056Ohm | 65 mJ | 20V | N-Channel | 1410pF @ 10V | 5.6m Ω @ 16A, 10V | 2.2V @ 250μA | 16A Ta 69A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF6706S2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6706s2tr1pbf-datasheets-4004.pdf | DirectFET™ Isometric S1 | 4.826mm | 558.8μm | 3.95mm | 3.8mOhm | 5 | No | 26W | DIRECTFET S1 | 1.81nF | 12 ns | 20ns | 9.2 ns | 9.9 ns | 17A | 20V | 25V | 1.8W Ta 26W Tc | 6.5mOhm | 25V | N-Channel | 1810pF @ 13V | 3.8mOhm @ 17A, 10V | 2.35V @ 25μA | 17A Ta 63A Tc | 20nC @ 4.5V | 3.8 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF6665 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6665-datasheets-0813.pdf | DirectFET™ Isometric SH | 3 | EAR99 | HIGH RELIABILITY | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-XBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 100V | 100V | 2.2W Ta 42W Tc | 4.2A | 34A | 0.062Ohm | 11 mJ | N-Channel | 530pF @ 25V | 62m Ω @ 5A, 10V | 5V @ 250μA | 4.2A Ta 19A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF6633TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2006 | DirectFET™ Isometric MP | No SVHC | 7 | 2.3W | DIRECTFET™ MP | 1.25nF | 31ns | 4.3 ns | 12 ns | 16A | 20V | 20V | 1.8V | 2.3W Ta 42W Tc | 18 ns | 20V | N-Channel | 1250pF @ 10V | 1.8 V | 5.6mOhm @ 16A, 10V | 2.2V @ 250μA | 16A Ta 59A Tc | 17nC @ 4.5V | 5.6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF8788PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf8788trpbf-datasheets-9612.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | No SVHC | 2.8MOhm | 8 | EAR99 | Tin | No | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 23 ns | 24ns | 11 ns | 23 ns | 24A | 20V | 30V | SILICON | SWITCHING | 1.8V | 2.5W Ta | 36 ns | 230 mJ | 30V | N-Channel | 5720pF @ 15V | 1.8 V | 2.8m Ω @ 24A, 10V | 2.35V @ 100μA | 24A Ta | 66nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRF6614TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2006 | DirectFET™ Isometric ST | 3.95mm | No SVHC | 8.3mOhm | 7 | 2.1W | DIRECTFET™ ST | 2.56nF | 18 ns | 10.1A | 20V | 40V | 1.8V | 2.1W Ta 42W Tc | 15 ns | 5.9mOhm | 40V | N-Channel | 2560pF @ 20V | 1.8 V | 8.3mOhm @ 12.7A, 10V | 2.25V @ 250μA | 12.7A Ta 55A Tc | 29nC @ 4.5V | 8.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF6668TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | DirectFET™ Isometric MZ | 80V | 2.8W Ta 89W Tc | N-Channel | 1320pF @ 25V | 15m Ω @ 12A, 10V | 4.9V @ 100μA | 55A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6709S2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6709s2tr1pbf-datasheets-6201.pdf | DirectFET™ Isometric S1 | 4.826mm | 558.8μm | 3.95mm | 5 | Copper, Silver, Tin | No | 21W | DIRECTFET S1 | 1.01nF | 8.4 ns | 25ns | 9.5 ns | 9.1 ns | 12A | 20V | 25V | 1.8W Ta 21W Tc | 13.5mOhm | 25V | N-Channel | 1010pF @ 13V | 7.8mOhm @ 12A, 10V | 2.35V @ 25μA | 12A Ta 39A Tc | 12nC @ 4.5V | 3.8 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRLR024ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlu024zpbf-datasheets-9358.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.38mm | 6.22mm | 3 | No | Single | 35W | 1 | D-Pak | 380pF | 8.2 ns | 43ns | 16 ns | 19 ns | 16mA | 16V | 55V | 35W Tc | 58mOhm | 55V | N-Channel | 380pF @ 25V | 58mOhm @ 9.6A, 10V | 3V @ 250μA | 16A Tc | 9.9nC @ 5V | 58 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IRFH5010TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5010trpbf-datasheets-4014.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | No SVHC | 8 | No | 3.6W | Single | 250W | 1 | 8-PQFN (5x6) | 4.34nF | 9 ns | 12ns | 8.6 ns | 27 ns | 100A | 20V | 100V | 4V | 51 ns | 9mOhm | 100V | N-Channel | 4340pF @ 25V | 4 V | 9mOhm @ 50A, 10V | 4V @ 150μA | 13A Ta 100A Tc | 98nC @ 10V | 9 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRFH5210TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | /files/infineontechnologies-irfh5210trpbf-datasheets-7209.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | No SVHC | 14.9MOhm | 8 | No | 3.6W | Single | 3.6W | 1 | 8-PQFN (5x6) | 2.57nF | 7.2 ns | 9.7ns | 6.5 ns | 21 ns | 100A | 20V | 100V | 2V | 44 ns | 14.9mOhm | 100V | N-Channel | 2570pF @ 25V | 2 V | 14.9mOhm @ 33A, 10V | 4V @ 100μA | 10A Ta 55A Tc | 59nC @ 10V | 14.9 mΩ | |||||||||||||||||||||||||||||||||||||||
| IRFHM9331TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfhm9331trpbf-datasheets-9096.pdf | 8-PowerTDFN | 2.9972mm | 939.8μm | 2.9972mm | No SVHC | 8 | No | 2.8W | Single | 2.8W | 1 | PQFN (3x3) | 1.543nF | 11 ns | 27ns | 60 ns | 72 ns | -11A | 25V | 30V | -1.8V | 96 ns | 14.6mOhm | -30V | P-Channel | 1543pF @ 25V | -1.8 V | 10mOhm @ 11A, 20V | 2.4V @ 25μA | 11A Ta 24A Tc | 48nC @ 10V | 10 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRFH5206TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5206tr2pbf-datasheets-0576.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | No SVHC | 8 | No | 3.6W | Single | 100W | 1 | 8-PQFN (5x6) | 2.49nF | 6.4 ns | 11ns | 8.2 ns | 22 ns | 89A | 20V | 60V | 4V | 39 ns | 6.7mOhm | 60V | N-Channel | 2490pF @ 25V | 4 V | 6.7mOhm @ 50A, 10V | 4V @ 100μA | 16A Ta 89A Tc | 60nC @ 10V | 6.7 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRFS4228TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs4228pbf-datasheets-0110.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | 3 | Single | 330W | D2PAK | 4.53nF | 18 ns | 59ns | 33 ns | 24 ns | 83A | 30V | 150V | 330W Tc | 12mOhm | 150V | N-Channel | 4530pF @ 25V | 15mOhm @ 33A, 10V | 5V @ 250μA | 83A Tc | 107nC @ 10V | 15 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLML6402GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlml6402gtrpbf-datasheets-0604.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.12mm | 1.397mm | Lead Free | 3 | 18 Weeks | 65MOhm | 3 | EAR99 | HIGH RELIABILITY | No | IRLML6402GTRPBF | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Single | 1.3W | 1 | Other Transistors | 150°C | 350 ns | 48ns | 381 ns | 588 ns | -3.7A | 12V | SILICON | SWITCHING | 20V | 1.3W Ta | 22A | -20V | P-Channel | 633pF @ 10V | 65m Ω @ 3.7A, 4.5V | 1.2V @ 250μA | 3.7A Ta | 12nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||
| IRLH5036TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/infineontechnologies-irlh5036tr2pbf-datasheets-0624.pdf | 8-PowerVDFN | 5mm | 810μm | 5.0038mm | No SVHC | 8 | No | 3.6W | 160W | 1 | 8-PQFN (5x6) | 5.36nF | 23 ns | 48ns | 15 ns | 28 ns | 100A | 16V | 60V | 1V | 42 ns | 4.4mOhm | 60V | N-Channel | 5360pF @ 25V | 1 V | 4.4mOhm @ 50A, 10V | 2.5V @ 150μA | 20A Ta 100A Tc | 90nC @ 10V | 4.4 mΩ |
