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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTB45N06G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp45n06g-datasheets-8152.pdf | 60V | 45A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 101ns | 106 ns | 33 ns | 45A | 20V | SILICON | DRAIN | SWITCHING | 2.4W Ta 125W Tj | 0.026Ohm | 240 mJ | 60V | N-Channel | 1725pF @ 25V | 26m Ω @ 22.5A, 10V | 4V @ 250μA | 45A Ta | 46nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BS170G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-bs170rlra-datasheets-6328.pdf&product=onsemiconductor-bs170g-6866464 | 60V | 500mA | TO-226-3, TO-92-3 (TO-226AA) | 5.2mm | 5.33mm | 4.19mm | Lead Free | 3 | 4.535924g | No SVHC | 5Ohm | 3 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | Copper, Silver, Tin | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | BOTTOM | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | 4 ns | 4 ns | 500mA | 20V | SILICON | SWITCHING | 2V | 350mW Ta | 0.5A | 60V | N-Channel | 60pF @ 10V | 2 V | 5 Ω @ 200mA, 10V | 3V @ 1mA | 500mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTB18N06LG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp18n06lg-datasheets-7848.pdf | 60V | 15A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | GULL WING | 260 | 3 | Single | 40 | 48.4W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 121ns | 42 ns | 11 ns | 15A | 10V | SILICON | DRAIN | SWITCHING | 48.4W Tc | 45A | 0.1Ohm | 61 mJ | 60V | N-Channel | 440pF @ 25V | 100m Ω @ 7.5A, 5V | 2V @ 250μA | 15A Tc | 20nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||
| BS107ARL1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-bs107ag-datasheets-7756.pdf&product=onsemiconductor-bs107arl1g-6866467 | 200V | 250mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.2mm | 5.33mm | 4.19mm | Lead Free | 3 | 4.535924g | No SVHC | 6.4Ohm | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | Copper, Silver, Tin | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | BOTTOM | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | 6 ns | 12 ns | 250mA | 20V | SILICON | SWITCHING | 3V | 350mW Ta | 0.25A | 200V | N-Channel | 60pF @ 25V | 3 V | 6.4 Ω @ 250mA, 10V | 3V @ 1mA | 250mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF3707STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3707pbf-datasheets-8617.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | No | 87W | D2PAK | 1.99nF | 8.5 ns | 78ns | 3.3 ns | 11.8 ns | 62A | 20V | 30V | 87W Tc | 12.5mOhm | 30V | N-Channel | 1990pF @ 15V | 12.5mOhm @ 15A, 10V | 3V @ 250μA | 62A Tc | 19nC @ 4.5V | 12.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB13N10G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb13n10t4g-datasheets-7754.pdf | 100V | 13A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | 260 | 3 | Single | 30 | 64.7W | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 40ns | 36 ns | 20 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 64.7W Ta | 39A | 0.165Ohm | 85 mJ | 100V | N-Channel | 550pF @ 25V | 165m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Ta | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NTB25P06G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb25p06t4g-datasheets-8205.pdf | 60V | 27.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | e3 | Tin (Sn) | GULL WING | 245 | 3 | Single | 40 | 120W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 72ns | 190 ns | 43 ns | 27.5A | 15V | SILICON | DRAIN | SWITCHING | N-CHANNEL | 120W Tj | 25A | 80A | 0.082Ohm | 600 mJ | -60V | P-Channel | 1680pF @ 25V | 82m Ω @ 25A, 10V | 4V @ 250μA | 27.5A Ta | 50nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||
| NTB52N10G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb52n10t4g-datasheets-0133.pdf | 100V | 52A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 178W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 95ns | 100 ns | 74 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta 178W Tc | 800 mJ | 100V | N-Channel | 3150pF @ 25V | 30m Ω @ 26A, 10V | 4V @ 250μA | 52A Tc | 135nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTB35N15G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb35n15t4g-datasheets-3686.pdf | 150V | 37A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | EAR99 | e3 | Tin (Sn) | YES | GULL WING | 260 | 3 | Single | 40 | 178W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 125ns | 120 ns | 90 ns | 37A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta 178W Tj | 111A | 0.05Ohm | 700 mJ | 150V | N-Channel | 3200pF @ 25V | 50m Ω @ 18.5A, 10V | 4V @ 250μA | 37A Ta | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| 2N7000G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/onsemiconductor-2n7000rlrag-datasheets-7719.pdf&product=onsemiconductor-2n7000g-6866473 | 60V | 200mA | TO-226-3, TO-92-3 (TO-226AA) | 5.2mm | 5.33mm | 4.19mm | Lead Free | 3 | 4.535924g | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | Copper, Silver, Tin | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | BOTTOM | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | 10 ns | 10 ns | 200mA | 20V | SILICON | 3V | 350mW Tc | 0.2A | 5Ohm | 5 pF | 60V | N-Channel | 60pF @ 25V | 3 V | 5 Ω @ 500mA, 10V | 3V @ 1mA | 200mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTB30N06G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb30n06t4-datasheets-9062.pdf | 60V | 27A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | 260 | 3 | Single | 40 | 88.2W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 36ns | 31 ns | 24 ns | 27A | 20V | SILICON | DRAIN | SWITCHING | 88.2W Tc | 80A | 0.042Ohm | 101 mJ | 60V | N-Channel | 1200pF @ 25V | 42m Ω @ 15A, 10V | 4V @ 250μA | 27A Ta | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NTB5605PG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb5605pt4g-datasheets-7511.pdf | -60V | -18.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | OBSOLETE (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | GULL WING | 260 | 3 | Single | 40 | 88W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 122ns | 75 ns | 29 ns | 18.5A | 20V | SILICON | DRAIN | SWITCHING | 60V | 88W Tc | 17A | 55A | 0.14Ohm | -60V | P-Channel | 1190pF @ 25V | 140m Ω @ 8.5A, 5V | 2V @ 250μA | 18.5A Ta | 22nC @ 5V | 5V | ±20V | ||||||||||||||||||||||||||||||||||
| NTB18N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb18n06t4g-datasheets-7772.pdf | 60V | 15A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | GULL WING | 235 | 3 | Single | NOT SPECIFIED | 48.4W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25ns | 13 ns | 14 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 48.4W Tc | 45A | 0.09Ohm | 61 mJ | 60V | N-Channel | 450pF @ 25V | 90m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTB25P06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb25p06t4g-datasheets-8205.pdf | 60V | 27.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | GULL WING | 225 | 3 | Single | 30 | 120W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 72ns | 190 ns | 43 ns | 27.5A | 15V | SILICON | DRAIN | SWITCHING | N-CHANNEL | 120W Tj | 25A | 80A | 0.082Ohm | 600 mJ | -60V | P-Channel | 1680pF @ 25V | 82m Ω @ 25A, 10V | 4V @ 250μA | 27.5A Ta | 50nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||
| 2N7000RLRMG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-2n7000rlra-datasheets-6189.pdf | 60V | 200mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 6 days ago) | yes | EAR99 | Copper, Silver, Tin | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | BOTTOM | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | Not Qualified | 10 ns | 10 ns | 200mA | 20V | SILICON | 350mW Tc | 0.2A | 5Ohm | 5 pF | 60V | N-Channel | 60pF @ 25V | 5 Ω @ 500mA, 10V | 3V @ 1mA | 200mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NTA4153NT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | /files/onsemiconductor-nta4153nt1g-datasheets-6401.pdf | 20V | 915mA | SC-75, SOT-416 | Contains Lead | 3 | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 235 | 3 | Single | NOT SPECIFIED | 300mW | 1 | FET General Purpose Power | Not Qualified | 4.4ns | 4.4 ns | 25 ns | 915mA | 6V | SILICON | SWITCHING | 300mW Tj | 0.915A | 20V | N-Channel | 110pF @ 16V | 230m Ω @ 600mA, 4.5V | 1.1V @ 250μA | 915mA Ta | 1.82nC @ 4.5V | 1.5V 4.5V | ±6V | |||||||||||||||||||||||||||||||||||||||
| NTB18N06G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb18n06t4g-datasheets-7772.pdf | 60V | 15A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | EAR99 | e3 | Tin (Sn) | GULL WING | 260 | 3 | Single | NOT SPECIFIED | 48.4W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25ns | 13 ns | 14 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 48.4W Tc | 45A | 0.09Ohm | 61 mJ | 60V | N-Channel | 450pF @ 25V | 90m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| APT38M50J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt38m50j-datasheets-3521.pdf | 500V | 38A | SOT-227-4, miniBLOC | Lead Free | 4 | 22 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 357W | 1 | 38 ns | 45ns | 33 ns | 100 ns | 38A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 357W Tc | N-Channel | 8800pF @ 25V | 100m Ω @ 28A, 10V | 5V @ 2.5mA | 38A Tc | 220nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRFSL3307ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb3307zpbf-datasheets-3788.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 75V | 230W Tc | N-Channel | 4750pF @ 50V | 5.8mOhm @ 75A, 10V | 4V @ 150μA | 120A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGSF1N03LT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mgsf1n03lt1g-datasheets-3861.pdf | 30V | 1.6A | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | 8541.21.00.95 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 730mW | 1 | FET General Purpose Power | Not Qualified | 1ns | 1 ns | 16 ns | 1.6A | 20V | SILICON | SWITCHING | 420mW Ta | 0.1Ohm | 30V | N-Channel | 140pF @ 5V | 100m Ω @ 1.2A, 10V | 2.4V @ 250μA | 1.6A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| MMSF7P03HDR2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mmsf7p03hdr2g-datasheets-3471.pdf | -30V | -7A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | OBSOLETE (Last Updated: 2 days ago) | no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 240 | 8 | 30 | 2.5W | 1 | Other Transistors | Not Qualified | 15.2ns | 55.2 ns | 99.7 ns | 7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 2.5W Ta | 7A | 50A | 0.035Ohm | 5000 mJ | -30V | P-Channel | 1680pF @ 24V | 35m Ω @ 5.3A, 10V | 1V @ 250μA | 7A Ta | 75.8nC @ 6V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTB23N03RG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntb23n03rt4g-datasheets-8827.pdf | 25V | 23A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | OBSOLETE (Last Updated: 2 days ago) | yes | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | 265 | 3 | Single | 40 | 37.5W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 14.9ns | 2 ns | 9.9 ns | 23A | 20V | SILICON | DRAIN | SWITCHING | 37.5W Tj | 6A | 60A | 0.06Ohm | 25V | N-Channel | 225pF @ 20V | 45m Ω @ 6A, 10V | 2V @ 250μA | 23A Ta | 3.76nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NILMS4501NR2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-nilms4501nr2g-datasheets-8789.pdf | 24V | 9.5A | 4-PowerDFN | Contains Lead | 4 | 4 | OBSOLETE (Last Updated: 2 weeks ago) | no | EAR99 | not_compliant | e0 | Tin/Lead (Sn90Pb10) | BOTTOM | NO LEAD | 240 | 4 | Dual | 30 | 2.7W | 1 | FET General Purpose Power | Not Qualified | 15ns | 6.5 ns | 22.5 ns | 9.5A | 10V | SILICON | DRAIN | SWITCHING | 1.4W Ta | 0.016Ohm | 50 mJ | 24V | N-Channel | 1500pF @ 6V | 13m Ω @ 6A, 10V | 2V @ 250μA | 9.5A Ta | 25nC @ 10V | Current Sensing | ±10V | |||||||||||||||||||||||||||||||||||
| SPD18P06P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd18p06p-datasheets-3249.pdf | -60V | -18.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.5mm | 2.3mm | 6.22mm | Lead Free | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 80W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 12 ns | 24.5 ns | 18.6A | 20V | -60V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 20V | 80W Tc | 74.4A | P-Channel | 860pF @ 25V | 20 V | 130m Ω @ 13.2A, 10V | 4V @ 1mA | 18.6A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| BS107G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-bs107ag-datasheets-7756.pdf | 200V | 250mA | TO-226-3, TO-92-3 (TO-226AA) | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | Copper, Silver, Tin | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | Not Qualified | 250mA | 20V | SILICON | SWITCHING | 3V | 350mW Ta | 0.25A | 200V | N-Channel | 60pF @ 25V | 14 Ω @ 200mA, 10V | 3V @ 1mA | 250mA Ta | 2.6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTB13N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb13n10t4g-datasheets-7754.pdf | 100V | 13A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | GULL WING | 235 | 3 | Single | NOT SPECIFIED | 64.7W | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 40ns | 36 ns | 20 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 64.7W Ta | 39A | 0.165Ohm | 85 mJ | 100V | N-Channel | 550pF @ 25V | 165m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Ta | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTB30N06LG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb30n06lt4g-datasheets-7786.pdf | 60V | 30A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | OBSOLETE (Last Updated: 4 days ago) | yes | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | 260 | 3 | Single | 40 | 88.2W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 200ns | 62 ns | 15.6 ns | 30A | 15V | SILICON | DRAIN | SWITCHING | 88.2W Tc | 90A | 0.046Ohm | 101 mJ | 60V | N-Channel | 1150pF @ 25V | 46m Ω @ 15A, 5V | 2V @ 250μA | 30A Ta | 32nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||
| FDB5690 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 1999 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp5690-datasheets-8259.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | 60V | 58W Tc | N-Channel | 1120pF @ 25V | 27mOhm @ 16A, 10V | 4V @ 250μA | 32A Tc | 33nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7701GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineon-irf7701gtrpbf-datasheets-4888.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | No SVHC | 11mOhm | 8 | 1.5W | 1 | 8-TSSOP | 5.05nF | 10A | 8V | 12V | 1.5W Ta | 11mOhm | -12V | P-Channel | 5050pF @ 10V | -1.2 V | 11mOhm @ 10A, 4.5V | 1.2V @ 250μA | 10A Ta | 100nC @ 4.5V | 11 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123LT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-bss123lt1g-datasheets-5749.pdf | 100V | 170mA | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 3 | yes | EAR99 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 225mW | 1 | FET General Purpose Power | Not Qualified | 40 ns | 170mA | 20V | SILICON | SWITCHING | 225mW Ta | 6Ohm | 100V | N-Channel | 20pF @ 25V | 6 Ω @ 100mA, 10V | 2.8V @ 1mA | 170mA Ta | 10V | ±20V |
