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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BS108G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-bs108g-datasheets-3469.pdf | 200V | 250mA | TO-226-3, TO-92-3 (TO-226AA) | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | Not Qualified | 15 ns | 250mA | 20V | SILICON | SWITCHING | 1.5V | 350mW Ta | 0.25A | 8Ohm | 200V | N-Channel | 150pF @ 25V | 8 Ω @ 100mA, 2.8V | 1.5V @ 1mA | 250mA Ta | 2V 2.8V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| MMSF7P03HDR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-mmsf7p03hdr2g-datasheets-3471.pdf | -30V | -7A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | OBSOLETE (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 8 | 40 | 2.5W | 1 | Other Transistors | Not Qualified | 15.2ns | 55.2 ns | 99.7 ns | 7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 2.5W Ta | 7A | 50A | 0.035Ohm | 5000 mJ | -30V | P-Channel | 1680pF @ 24V | 35m Ω @ 5.3A, 10V | 1V @ 250μA | 7A Ta | 75.8nC @ 6V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| MMSF3P02HDR2SG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | -20V | -5.6A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 5.6A | 20V | 2.5W Ta | P-Channel | 1400pF @ 16V | 75m Ω @ 3A, 10V | 2V @ 250μA | 5.6A Ta | 46nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002LT3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2n7002lt1-datasheets-6350.pdf | 60V | 115A | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | DUAL | GULL WING | 240 | 3 | Single | 30 | 300mW | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | 40 ns | 115mA | 20V | SILICON | SWITCHING | 225mW Ta | TO-236AB | 5 pF | 60V | N-Channel | 50pF @ 25V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| 2N7000RLRPG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-2n7000rlra-datasheets-6189.pdf | 60V | 200mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Lead Free | 3 | 3 | OBSOLETE (Last Updated: 1 week ago) | yes | EAR99 | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | BOTTOM | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | Not Qualified | 10 ns | 200mA | 20V | SILICON | 350mW Tc | 0.2A | 5Ohm | 5 pF | 60V | N-Channel | 60pF @ 25V | 5 Ω @ 500mA, 10V | 3V @ 1mA | 200mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BS170RLRPG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-bs170rlra-datasheets-6328.pdf | 60V | 500mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Lead Free | 3 | 3 | OBSOLETE (Last Updated: 3 days ago) | yes | EAR99 | 8541.21.00.95 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | BOTTOM | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | Not Qualified | 500mA | 20V | SILICON | SWITCHING | 350mW Ta | 0.5A | 5Ohm | 60V | N-Channel | 60pF @ 10V | 5 Ω @ 200mA, 10V | 3V @ 1mA | 500mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFS38N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irfb38n20dpbf-datasheets-2918.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3.8W Ta 300W Tc | 43A | 180A | 0.054Ohm | 460 mJ | N-Channel | 2900pF @ 25V | 54m Ω @ 26A, 10V | 5V @ 250μA | 43A Tc | 91nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| MGSF1N03LT3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mgsf1n03lt1g-datasheets-3861.pdf | 30V | 1.6A | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 240 | 3 | Single | 30 | 730mW | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | 1ns | 1 ns | 16 ns | 1.6A | 20V | SILICON | SWITCHING | 420mW Ta | 0.1Ohm | 30V | N-Channel | 140pF @ 5V | 100m Ω @ 1.2A, 10V | 2.4V @ 250μA | 1.6A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSS138LT3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/onsemiconductor-bss138lt3g-datasheets-5501.pdf | 50V | 200mA | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | 3 | no | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn80Pb20) | YES | DUAL | GULL WING | 240 | 3 | Single | 30 | 225mW | 1 | FET General Purpose Power | Not Qualified | 20 ns | 200mA | 20V | SILICON | SWITCHING | 225mW Ta | 0.2A | 5 pF | 50V | N-Channel | 50pF @ 25V | 3.5 Ω @ 200mA, 5V | 1.5V @ 1mA | 200mA Ta | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| MTB50P03HDLG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-mtb50p03hdlt4g-datasheets-3135.pdf | -30V | -50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | No SVHC | 3 | AVALANCHE RATED | e3 | Tin (Sn) | YES | GULL WING | 260 | 3 | Single | 40 | 125W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 340ns | 218 ns | 90 ns | 50A | 15V | SILICON | DRAIN | SWITCHING | 30V | -1.5V | 2.5W Ta 125W Tc | 0.025Ohm | -30V | P-Channel | 4900pF @ 25V | 25m Ω @ 25A, 5V | 2V @ 250μA | 50A Tc | 100nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||||||||
| FDB5690 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 1999 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp5690-datasheets-8259.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | 60V | 58W Tc | N-Channel | 1120pF @ 25V | 27mOhm @ 16A, 10V | 4V @ 250μA | 32A Tc | 33nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7701GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineon-irf7701gtrpbf-datasheets-4888.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | No SVHC | 11mOhm | 8 | 1.5W | 1 | 8-TSSOP | 5.05nF | 10A | 8V | 12V | 1.5W Ta | 11mOhm | -12V | P-Channel | 5050pF @ 10V | -1.2 V | 11mOhm @ 10A, 4.5V | 1.2V @ 250μA | 10A Ta | 100nC @ 4.5V | 11 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4321PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfs4321trlpbf-datasheets-3082.pdf | 150V | 83A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | No SVHC | 15MOhm | 3 | EAR99 | No | Single | 330W | 1 | 18 ns | 60ns | 35 ns | 25 ns | 83A | 30V | 150V | 5V | 350W Tc | 130 ns | 150V | N-Channel | 4460pF @ 25V | 5 V | 15m Ω @ 33A, 10V | 5V @ 250μA | 85A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| SPD02N80C3BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-spd02n80c3btma1-datasheets-3203.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | yes | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | No | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | 42W | 1 | R-PSSO-G2 | 25 ns | 15ns | 18 ns | 65 ns | 2A | 20V | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 42W Tc | TO-252AA | 2A | 6A | 90 mJ | N-Channel | 290pF @ 100V | 2.7 Ω @ 1.2A, 10V | 3.9V @ 120μA | 2A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FQD2N90TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 900V | 1.7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 260.37mg | 3 | No | Single | 2.5W | 1 | 15 ns | 35ns | 30 ns | 20 ns | 1.7A | 30V | 2.5W Ta 50W Tc | 900V | N-Channel | 500pF @ 25V | 7.2 Ω @ 850mA, 10V | 5V @ 250μA | 1.7A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL4321PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-irfs4321trlpbf-datasheets-3082.pdf | 150V | 83A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 330W | 1 | FET General Purpose Power | Not Qualified | 18 ns | 60ns | 35 ns | 25 ns | 83A | 30V | SILICON | DRAIN | SWITCHING | 5V | 350W Tc | 75A | 150V | N-Channel | 4460pF @ 25V | 15m Ω @ 33A, 10V | 5V @ 250μA | 85A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRFSL4228PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs4228pbf-datasheets-0110.pdf | 150V | 83A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | No | Single | 330W | 1 | TO-262 | 4.53nF | 18 ns | 24 ns | 83A | 30V | 150V | 330W Tc | 15mOhm | 150V | N-Channel | 4530pF @ 25V | 15mOhm @ 33A, 10V | 5V @ 250μA | 83A Tc | 107nC @ 10V | 15 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SPD07N20 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd07n20-datasheets-3200.pdf | 200V | 7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 40ns | 30 ns | 55 ns | 7A | 20V | SILICON | 40W Tc | 7A | 28A | 0.4Ohm | 120 mJ | 200V | N-Channel | 530pF @ 25V | 400m Ω @ 4.5A, 10V | 4V @ 1mA | 7A Tc | 31.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDR842P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdr842p-datasheets-3345.pdf | 8-LSOP (0.130, 3.30mm Width) | SuperSOT™-8 | 12V | 1.8W Ta | P-Channel | 5350pF @ 6V | 9mOhm @ 11A, 4.5V | 1.5V @ 250μA | 11A Ta | 80nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD04N60S5 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spu04n60s5bkma1-datasheets-1983.pdf | 600V | 4.5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3 | yes | AVALANCHE RATED, HIGH VOLTAGE | Tin | No | e3 | YES | GULL WING | 3 | Single | 50W | 1 | FET General Purpose Power | R-PSSO-G2 | 55 ns | 30ns | 15 ns | 60 ns | 4.5A | 20V | SILICON | DRAIN | SWITCHING | 50W Tc | TO-252AA | 9A | 0.95Ohm | 600V | N-Channel | 580pF @ 25V | 950m Ω @ 2.8A, 10V | 5.5V @ 200μA | 4.5A Tc | 22.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFI4228PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfi4228pbf-datasheets-3414.pdf | 150V | 34A | TO-220-3 Full Pack | 10.6172mm | 9.8mm | 4.826mm | Lead Free | 3 | 15 Weeks | 16MOhm | 3 | EAR99 | No | Single | 46W | 1 | FET General Purpose Power | 34A | 30V | SILICON | DRAIN | SWITCHING | 46W Tc | TO-220AB | 150V | N-Channel | 4560pF @ 25V | 16m Ω @ 20A, 10V | 5V @ 250μA | 34A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3302STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3302spbf-datasheets-8815.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 23mOhm | 3 | EAR99 | Single | 57W | 110ns | 89 ns | 41 ns | 39A | 10V | 57W Tc | 20V | N-Channel | 1300pF @ 15V | 20m Ω @ 23A, 7V | 700mV @ 250μA | 39A Tc | 31nC @ 4.5V | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6722STR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6722strpbf-datasheets-9463.pdf | DirectFET™ Isometric ST | 4.826mm | 506μm | 3.95mm | Lead Free | No SVHC | 7.3MOhm | 5 | 2.2W | 1 | DIRECTFET™ ST | 1.32nF | 7.7 ns | 11ns | 5.7 ns | 8.5 ns | 13A | 20V | 30V | 30V | 2.2W Ta 42W Tc | 32 ns | 10.3mOhm | 30V | N-Channel | 1320pF @ 15V | 1.9 V | 7.3mOhm @ 13A, 10V | 2.4V @ 50μA | 13A Ta 58A Tc | 17nC @ 4.5V | 7.3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BS107ARL1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-bs107ag-datasheets-7756.pdf | 200V | 250mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Contains Lead | 3 | 3 | EAR99 | EUROPEAN PART NUMBER | not_compliant | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 240 | 3 | Single | 30 | 350mW | 1 | FET General Purpose Power | Not Qualified | 250mA | 20V | SILICON | SWITCHING | 350mW Ta | 0.25A | 200V | N-Channel | 60pF @ 25V | 6.4 Ω @ 250mA, 10V | 3V @ 1mA | 250mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8750 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdd8750-datasheets-3445.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | 25V | 3.7W Ta 18W Tc | N-Channel | 425pF @ 13V | 40mOhm @ 2.7A, 10V | 2.5V @ 250μA | 6.5A Ta 2.7A Tc | 9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8442 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | /files/onsemiconductor-fdb8442-datasheets-3450.pdf | 40V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 1.31247g | No SVHC | 2 | yes | No | Single | 254W | 1 | 19.5 ns | 19.3ns | 17.2 ns | 57 ns | 80A | 20V | 40V | 2.9V | 254W Tc | 40V | N-Channel | 12200pF @ 25V | 2.9 V | 2.9m Ω @ 80A, 10V | 4V @ 250μA | 28A Ta 80A Tc | 235nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3207ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs3207ztrrpbf-datasheets-3199.pdf | 75V | 170A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6.73mm | 2.39mm | 6.22mm | Lead Free | No SVHC | 4.1MOhm | 3 | EAR99 | No | 300W | 1 | 20 ns | 68ns | 55 ns | 170A | 20V | 75V | 4V | 300W Tc | 54 ns | 75V | N-Channel | 6920pF @ 50V | 4 V | 4.1m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SPD03N60S5BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spu03n60s5bkma1-datasheets-1974.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | no | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | Not Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 38W | 1 | Not Qualified | R-PSSO-G2 | 35 ns | 25ns | 15 ns | 40 ns | 3.2A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 38W Tc | TO-252AA | 5.7A | N-Channel | 420pF @ 25V | 1.4 Ω @ 2A, 10V | 5.5V @ 135μA | 3.2A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SPD06N60C3BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spd06n60c3btma1-datasheets-3119.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | HIGH VOLTAGE | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 74W Tc | TO-252AA | 6.2A | 18.6A | 0.75Ohm | 200 mJ | N-Channel | 620pF @ 25V | 750m Ω @ 3.9A, 10V | 3.9V @ 260μA | 6.2A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3715ZCTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3715zctrlp-datasheets-2802.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | compliant | YES | 175°C | FET General Purpose Power | Single | 40W | 20V | 49A | N-Channel | 810pF @ 10V | 11m Ω @ 15A, 10V | 2.55V @ 250μA | 49A Tc | 11nC @ 4.5V |
