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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF2805STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf2805strlpbf-datasheets-1477.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 55V | 200W Tc | N-Channel | 5110pF @ 25V | 4.7m Ω @ 104A, 10V | 4V @ 250μA | 135A Tc | 230nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3715TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineon-irlr3715trrpbf-datasheets-4305.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | Single | 71W | D-Pak | 1.06nF | 73ns | 5.1 ns | 12 ns | 54A | 20V | 20V | 3.8W Ta 71W Tc | 14mOhm | 20V | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 14 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRLR2703TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr2703trpbf-datasheets-1386.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | No SVHC | 45mOhm | 3 | No | 38W | 1 | D-Pak | 450pF | 8.5 ns | 140ns | 20 ns | 12 ns | 23A | 16V | 30V | 16V | 45W Tc | 65mOhm | 30V | N-Channel | 450pF @ 25V | 16 V | 45mOhm @ 14A, 10V | 1V @ 250μA | 23A Tc | 15nC @ 4.5V | 45 mΩ | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||
| IRFR3911TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu3911pbf-datasheets-0146.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 100V | 56W Tc | N-Channel | 740pF @ 25V | 115m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR4105ZTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr4105ztrlpbf-datasheets-1143.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.38mm | 6.22mm | 3 | No | Single | 48W | 1 | D-Pak | 740pF | 10 ns | 40ns | 24 ns | 26 ns | 30A | 20V | 55V | 48W Tc | 24.5mOhm | 55V | N-Channel | 740pF @ 25V | 24.5mOhm @ 18A, 10V | 4V @ 250μA | 30A Tc | 27nC @ 10V | 24.5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRLR3717TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3717trrpbf-datasheets-9384.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | Single | 89W | D-Pak | 2.83nF | 14ns | 16 ns | 120A | 20V | 89W Tc | 4mOhm | 20V | N-Channel | 2830pF @ 10V | 4mOhm @ 15A, 10V | 2.45V @ 250μA | 120A Tc | 31nC @ 4.5V | 4 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFR3711ZTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | /files/infineontechnologies-irfr3711ztrpbf-datasheets-1493.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20V | 79W Tc | N-Channel | 2160pF @ 10V | 5.7m Ω @ 15A, 10V | 2.45V @ 250μA | 93A Tc | 27nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3714ZTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3714zpbf-datasheets-9174.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.38mm | 6.22mm | 3 | No | Single | 35W | 1 | D-Pak | 560pF | 5.4 ns | 7.6ns | 4.3 ns | 9.2 ns | 37A | 16V | 20V | 35W Tc | 15mOhm | 20V | N-Channel | 560pF @ 10V | 15mOhm @ 15A, 10V | 2.55V @ 250μA | 37A Tc | 7.1nC @ 4.5V | 15 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF1405ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/infineontechnologies-irf1405zlpbf-datasheets-4233.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | 7 | No | 230W | 1 | D2PAK | 4.78nF | 18 ns | 110ns | 82 ns | 48 ns | 75A | 20V | 55V | 230W Tc | 4.9mOhm | 55V | N-Channel | 4780pF @ 25V | 4.9mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 180nC @ 10V | 4.9 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRLR3714TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3714trlpbf-datasheets-7351.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | Single | 47W | 1 | D-Pak | 670pF | 78ns | 4.5 ns | 10 ns | 36A | 20V | 20V | 47W Tc | 20mOhm | 20V | N-Channel | 670pF @ 10V | 20mOhm @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 20 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRL3303STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3303spbf-datasheets-8940.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | 3.8W Ta 68W Tc | N-Channel | 870pF @ 25V | 26m Ω @ 20A, 10V | 1V @ 250μA | 38A Tc | 26nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP102N15T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixta102n15t-datasheets-9411.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 455W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 14ns | 22 ns | 25 ns | 102A | 20V | SILICON | DRAIN | SWITCHING | 455W Tc | TO-220AB | 300A | 0.018Ohm | 750 mJ | 150V | N-Channel | 5220pF @ 25V | 18m Ω @ 500mA, 10V | 5V @ 1mA | 102A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRFR120ZTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr120ztrpbf-datasheets-7471.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | 3 | No | 35W | 1 | D-Pak | 310pF | 8.3 ns | 26ns | 23 ns | 27 ns | 8.7A | 20V | 100V | 35W Tc | 190mOhm | 100V | N-Channel | 310pF @ 25V | 190mOhm @ 5.2A, 10V | 4V @ 250μA | 8.7A Tc | 10nC @ 10V | 190 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRLR7807ZCTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | TO-252-3, DPak (2 Leads + Tab), SC-63 | compliant | YES | FET General Purpose Power | Single | 30V | 40W Tc | 43A | N-Channel | 780pF @ 15V | 13.8m Ω @ 15A, 10V | 2.25V @ 250μA | 43A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV12N120P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n120p-datasheets-4453.pdf | TO-220-3, Short Tab | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 543W | 1 | FET General Purpose Power | Not Qualified | 25ns | 34 ns | 62 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 543W Tc | 500 mJ | 1.2kV | N-Channel | 5400pF @ 25V | 1.35 Ω @ 500mA, 10V | 6.5V @ 1mA | 12A Tc | 103nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| TPCA8003-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8003hte12lqm-datasheets-1124.pdf | 8-PowerVDFN | 8 | 45W | 4ns | 10 ns | 35A | 20V | 1.6W Ta 45W Tc | 30V | N-Channel | 1465pF @ 10V | 6.6m Ω @ 18A, 10V | 2.3V @ 1mA | 35A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3710ZSTRRPBF | Infineon Technologies | $3.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3710zlpbf-datasheets-0339.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 3 | No | Single | 160W | D2PAK | 2.9nF | 17 ns | 77ns | 56 ns | 41 ns | 59A | 20V | 100V | 160W Tc | 18mOhm | 100V | N-Channel | 2900pF @ 25V | 18mOhm @ 35A, 10V | 4V @ 250μA | 59A Tc | 120nC @ 10V | 18 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRL3103STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3103strlpbf-datasheets-9763.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | No | Single | 110W | 1 | D2PAK | 1.65nF | 8.9 ns | 120ns | 9.1 ns | 14 ns | 64A | 16V | 30V | 94W Tc | 16mOhm | 30V | N-Channel | 1650pF @ 25V | 12mOhm @ 34A, 10V | 1V @ 250μA | 64A Tc | 33nC @ 4.5V | 12 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| IXTC110N25T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/ixys-ixtc110n25t-datasheets-1069.pdf | ISOPLUS220™ | Lead Free | 3 | 27MOhm | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | 27ns | 27 ns | 60 ns | 50A | 20V | SILICON | ISOLATED | SWITCHING | 180W Tc | 1000 mJ | 250V | N-Channel | 9400pF @ 25V | 27m Ω @ 55A, 10V | 4.5V @ 1mA | 50A Tc | 157nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRLR3105TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3105pbf-datasheets-9958.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.38mm | 6.22mm | 2 | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 57W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 57ns | 37 ns | 25 ns | 25A | 16V | SILICON | DRAIN | SWITCHING | 57W Tc | TO-252AA | 100A | 61 mJ | 55V | N-Channel | 710pF @ 25V | 37m Ω @ 15A, 10V | 3V @ 250μA | 25A Tc | 20nC @ 5V | 5V 10V | ±16V | |||||||||||||||||||||||||||
| IXFH160N15T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/ixys-ixfh160n15t-datasheets-1086.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 830W Tc | TO-247AD | 0.0096Ohm | 1000 mJ | N-Channel | 8800pF @ 25V | 9.6m Ω @ 500mA, 10V | 5V @ 1mA | 160A Tc | 160nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| NTMFS4849NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4849nt1g-datasheets-9973.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 5 | LAST SHIPMENTS (Last Updated: 2 weeks ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 5 | NOT SPECIFIED | 5.7W | 1 | FET General Purpose Power | Not Qualified | 45.1ns | 5.7 ns | 18.2 ns | 16.1A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 870mW Ta 42.4W Tc | 100A | 0.0079Ohm | 30V | N-Channel | 2040pF @ 12V | 5.1m Ω @ 30A, 10V | 2.5V @ 250μA | 10.2A Ta 71A Tc | 22nC @ 4.5V | 4.5V 11.5V | ±16V | ||||||||||||||||||||||||||||||
| IRLR7811WCTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30V | 71W Tc | N-Channel | 2260pF @ 15V | 10.5m Ω @ 15A, 10V | 2.5V @ 250μA | 64A Tc | 31nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8032-H(TE12LQM) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-SOP (5.5x6.0) | 2.846nF | 15A | 30V | N-Channel | 2846pF @ 10V | 6.5mOhm @ 7.5A, 10V | 2.5V @ 1mA | 15A Ta | 33nC @ 10V | 6.5 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8A01-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8a01hte12lq-datasheets-1009.pdf | 8-PowerVDFN | 30V | 1.6W Ta 45W Tc | N-Channel | 1970pF @ 10V | 5.6m Ω @ 18A, 10V | 2.3V @ 1mA | 36A Ta | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8105(TE12L,Q,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8105te12lqm-datasheets-1016.pdf | 8-PowerVDFN | 12V | 1.6W Ta 20W Tc | P-Channel | 1600pF @ 10V | 33m Ω @ 3A, 4.5V | 1.2V @ 200μA | 6A Ta | 18nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL7833STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl7833pbf-datasheets-2940.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | No SVHC | 3.8MOhm | 3 | No | Single | 140W | D2PAK | 4.17nF | 18 ns | 50ns | 6.9 ns | 21 ns | 150A | 20V | 30V | 140W Tc | 3.8mOhm | 30V | N-Channel | 4170pF @ 15V | 2.3 V | 3.8mOhm @ 38A, 10V | 2.3V @ 250μA | 150A Tc | 47nC @ 4.5V | 3.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF2807ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf2807zpbf-datasheets-8787.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 3 | No | 170W | 1 | D2PAK | 3.27nF | 18 ns | 120ns | 130 ns | 40 ns | 75A | 20V | 75V | 170W Tc | 2mOhm | 40V | N-Channel | 3270pF @ 25V | 9.4mOhm @ 53A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 9.4 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TPCA8102(TE12L,Q,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8102te12lqm-datasheets-1033.pdf | 8-PowerVDFN | 30V | 1.6W Ta 45W Tc | P-Channel | 4600pF @ 10V | 6m Ω @ 20A, 10V | 2V @ 1mA | 40A Ta | 109nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS31N20DTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb31n20dpbf-datasheets-2062.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | 8541.21.00.95 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3.1W Ta 200W Tc | 31A | 124A | 0.082Ohm | 420 mJ | N-Channel | 2370pF @ 25V | 82m Ω @ 18A, 10V | 5.5V @ 250μA | 31A Tc | 107nC @ 10V | 10V | ±30V |
