Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIA419DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia419djt1ge3-datasheets-0334.pdf | PowerPAK® SC-70-6 | Lead Free | 3 | Unknown | 30MOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | Single | 40 | 3.5W | 1 | FET General Purpose Power | S-XDSO-N3 | 46ns | 52 ns | 91 ns | -12A | 5V | SILICON | DRAIN | SWITCHING | 20V | -1V | 3.5W Ta 19W Tc | 8.8A | 30A | -20V | P-Channel | 1500pF @ 10V | -1 V | 30m Ω @ 5.9A, 4.5V | 850mV @ 250μA | 12A Tc | 29nC @ 5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||
| SIA417DJ-T1-GE3 | Vishay Siliconix | $0.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia417djt1ge3-datasheets-0374.pdf | PowerPAK® SC-70-6 | Lead Free | 3 | Unknown | 23mOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | Single | 40 | 3.5W | 1 | Other Transistors | S-XDSO-N3 | 15 ns | 25ns | 45 ns | 80 ns | -12A | 5V | SILICON | DRAIN | SWITCHING | -1V | 3.5W Ta 19W Tc | 30A | 8V | P-Channel | 1600pF @ 4V | -1 V | 23m Ω @ 7A, 4.5V | 1V @ 250μA | 12A Tc | 32nC @ 5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||
| SIR472DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir472dpt1ge3-datasheets-0439.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 10 Weeks | 506.605978mg | Unknown | 12mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.9W | 1 | FET General Purpose Power | R-PDSO-C5 | 16 ns | 12ns | 10 ns | 16 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 3.9W Ta 29.8W Tc | 50A | 24 mJ | 30V | N-Channel | 820pF @ 15V | 12m Ω @ 13.8A, 10V | 2.5V @ 250μA | 20A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| DMP2066LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmp2066lss13-datasheets-9992.pdf | 8-SOIC (0.154, 3.90mm Width) | 5.3mm | 1.5mm | 4.1mm | 8 | 850.995985mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 13.7 ns | 14ns | 35.5 ns | 79.1 ns | 6.5A | 12V | SILICON | SWITCHING | 20V | 20V | 2.5W Ta | 26A | 0.04Ohm | P-Channel | 820pF @ 15V | 40m Ω @ 5.8A, 4.5V | 1.2V @ 250μA | 6.5A Ta | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||
| SI7784DP-T1-GE3 | Vishay Siliconix | $7.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7784dpt1ge3-datasheets-0268.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 506.605978mg | Unknown | 6mOhm | 8 | No | 1 | Single | 5W | 1 | PowerPAK® SO-8 | 1.6nF | 22 ns | 13ns | 12 ns | 26 ns | 35A | 20V | 30V | 2.5V | 5W Ta 27.7W Tc | 6.5mOhm | 30V | N-Channel | 1600pF @ 15V | 6mOhm @ 20A, 10V | 2.5V @ 250μA | 35A Tc | 45nC @ 10V | 6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI7601DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7601dnt1ge3-datasheets-0272.pdf | PowerPAK® 1212-8 | 8 | Single | PowerPAK® 1212-8 | 1.87nF | 18 ns | 112ns | 80 ns | 53 ns | -16A | 12V | 20V | 3.8W Ta 52W Tc | 19mOhm | P-Channel | 1870pF @ 10V | 19.2mOhm @ 11A, 4.5V | 1.6V @ 250μA | 16A Tc | 27nC @ 5V | 19.2 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIB419DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib419dkt1ge3-datasheets-0341.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | 95.991485mg | Unknown | 6 | 1 | 2.45W | 1 | PowerPAK® SC-75-6L Single | 562pF | 16 ns | 42ns | 9 ns | 28 ns | -9A | 8V | 12V | 12V | -1V | 2.45W Ta 13.1W Tc | 89mOhm | -12V | P-Channel | 562pF @ 6V | -1 V | 60mOhm @ 5.2A, 4.5V | 1V @ 250μA | 9A Tc | 11.82nC @ 5V | 60 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SIB417DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib417dkt1ge3-datasheets-0352.pdf | PowerPAK® SC-75-6L | 3 | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 40 | 2.4W | 1 | Other Transistors | S-XDSO-N3 | 13 ns | 31ns | 18 ns | 35 ns | -9A | 5V | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 9A | 15A | 0.052Ohm | -8V | P-Channel | 675pF @ 4V | -1 V | 52m Ω @ 5.6A, 4.5V | 1V @ 250μA | 9A Tc | 12.75nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||
| SIB415DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib415dkt1ge3-datasheets-0356.pdf | PowerPAK® SC-75-6L | 3 | 6 | yes | EAR99 | No | DUAL | 260 | 6 | 40 | 2.4W | 1 | Other Transistors | S-XDSO-N3 | 55ns | 10 ns | 14 ns | -9A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 9A | 0.087Ohm | -30V | P-Channel | 295pF @ 15V | -3 V | 87m Ω @ 4.17A, 10V | 3V @ 250μA | 9A Tc | 10.05nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI7160DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7160dpt1ge3-datasheets-0207.pdf | PowerPAK® SO-8 | 5 | 8 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 5W | 1 | R-PDSO-C5 | 29 ns | 115ns | 21 ns | 43 ns | 20A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5W Ta 27.7W Tc | 60A | 20 mJ | 30V | N-Channel | 2970pF @ 15V | 8.7m Ω @ 15A, 10V | 2.5V @ 250μA | 20A Tc | 66nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| SIB412DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib412dkt1e3-datasheets-6377.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | 95.991485mg | 34mOhm | 6 | 1 | Single | 2.4W | PowerPAK® SC-75-6L Single | 535pF | 6.6 ns | 16ns | 14 ns | 50 ns | -4.5A | 8V | 20V | 20V | 2.4W Ta 13W Tc | 34mOhm | 20V | N-Channel | 535pF @ 10V | -1.5 V | 34mOhm @ 6.6A, 4.5V | 1V @ 250μA | 9A Tc | 10.16nC @ 5V | 34 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SI7102DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7102dnt1ge3-datasheets-0197.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | Lead Free | 5 | 15 Weeks | Unknown | 3.8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 3.8W | 1 | FET General Purpose Powers | S-XDSO-C5 | 27 ns | 125ns | 12 ns | 53 ns | 35A | 8V | SILICON | DRAIN | SWITCHING | 400mV | 3.8W Ta 52W Tc | 25A | 60A | 12V | N-Channel | 3720pF @ 6V | 400 mV | 3.8m Ω @ 15A, 4.5V | 1V @ 250μA | 35A Tc | 110nC @ 8V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||
| SI7194DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7194dpt1ge3-datasheets-0232.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 15 Weeks | 506.605978mg | 8 | No | 1 | PowerPAK® SO-8 | 6.59nF | 46 ns | 25ns | 40 ns | 72 ns | 60A | 20V | 25V | 5.4W Ta 83W Tc | 2mOhm | 25V | N-Channel | 6590pF @ 15V | 2mOhm @ 20A, 10V | 2.6V @ 250μA | 60A Tc | 145nC @ 10V | 2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI7718DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7718dnt1ge3-datasheets-0243.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 1 | FET General Purpose Powers | S-XDSO-C5 | 22 ns | 13ns | 12 ns | 26 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 3.7W Ta 52W Tc | 70A | 0.006Ohm | 20 mJ | 30V | N-Channel | 1600pF @ 15V | 6m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| SI7196DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | WFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7196dpt1ge3-datasheets-0247.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 506.605978mg | Unknown | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 1 | Single | 30 | 5W | 1 | R-PDSO-C5 | 21 ns | 12ns | 12 ns | 22 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 3V | 5W Ta 41.6W Tc | 50A | 20 mJ | 30V | N-Channel | 1577pF @ 15V | 11m Ω @ 12A, 10V | 3V @ 250μA | 16A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SIA408DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sia408djt1ge3-datasheets-0264.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 15 Weeks | Unknown | 36mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 6 | 1 | Single | 40 | 3.4W | 1 | FET General Purpose Power | S-XDSO-C3 | 10 ns | 10ns | 15 ns | 35 ns | 4.5A | 12V | SILICON | DRAIN | SWITCHING | 1.6V | 3.4W Ta 17.9W Tc | 20A | 30V | N-Channel | 830pF @ 15V | 1.6 V | 36m Ω @ 5.3A, 10V | 1.6V @ 250μA | 4.5A Tc | 24nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||
| SI7802DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7802dnt1e3-datasheets-6209.pdf | PowerPAK® 1212-8 | 5 | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 21 ns | 1.24A | 20V | SILICON | DRAIN | SWITCHING | 2.4V | 1.5W Ta | 8A | 0.435Ohm | 0.3 mJ | 250V | N-Channel | 435m Ω @ 1.95A, 10V | 3.6V @ 250μA | 1.24A Ta | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI7405BDN-T1-GE3 | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7405bdnt1ge3-datasheets-0240.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 15 Weeks | 13mOhm | 8 | EAR99 | No | DUAL | C BEND | 8 | 1 | Single | 3.6W | 1 | Other Transistors | S-XDSO-C5 | 22 ns | 60ns | 45 ns | 80 ns | -16A | 8V | SILICON | DRAIN | SWITCHING | 12V | 3.6W Ta 33W Tc | 40A | -12V | P-Channel | 3500pF @ 6V | 13m Ω @ 13.5A, 4.5V | 1V @ 250μA | 16A Tc | 115nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SI7758DP-T1-GE3 | Vishay Siliconix | $0.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7758dpt1ge3-datasheets-0294.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | 2.9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 6.25W | 1 | FET General Purpose Powers | R-XDSO-C5 | 53 ns | 25ns | 30 ns | 56 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 6.25W Ta 104W Tc | 30V | N-Channel | 7150pF @ 15V | 2.9m Ω @ 20A, 10V | 2.7V @ 250μA | 60A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| FQA7N90M_F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqa7n90mf109-datasheets-0189.pdf | TO-3P-3, SC-65-3 | TO-3P | 900V | 210W Tc | N-Channel | 1880pF @ 25V | 1.8Ohm @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 52nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7170DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7170dpt1ge3-datasheets-0190.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | Unknown | 8 | yes | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | R-XDSO-C5 | 15 ns | 10ns | 8 ns | 35 ns | 40A | 20V | SILICON | DRAIN | 2.6V | 5W Ta 48W Tc | 70A | 0.0034Ohm | 30V | N-Channel | 4355pF @ 15V | 3.4m Ω @ 15A, 10V | 2.6V @ 250μA | 40A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| NTB52N10T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-ntb52n10t4g-datasheets-0133.pdf | 100V | 52A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | LAST SHIPMENTS (Last Updated: 6 days ago) | yes | EAR99 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 178W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 95ns | 100 ns | 74 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta 178W Tc | 800 mJ | 100V | N-Channel | 3150pF @ 25V | 30m Ω @ 26A, 10V | 4V @ 250μA | 52A Tc | 135nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI1046R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1046rt1ge3-datasheets-0104.pdf | SC-75A | 3 | 3 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | FLAT | 260 | 3 | Single | 30 | 250mW | 1 | FET General Purpose Powers | 17 ns | 19ns | 19 ns | 76 ns | 606mA | 8V | SILICON | SWITCHING | 250mW Ta | 0.42Ohm | 20V | N-Channel | 66pF @ 10V | 420m Ω @ 606mA, 4.5V | 950mV @ 250μA | 1.49nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SI1054X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1054xt1ge3-datasheets-0096.pdf | SOT-563, SOT-666 | 6 | No | Single | 236mW | 1 | SC-89-6 | 480pF | 5.5 ns | 13ns | 13 ns | 37 ns | 1.32A | 8V | 12V | 236mW Ta | 95mOhm | 12V | N-Channel | 480pF @ 6V | 95mOhm @ 1.32A, 4.5V | 1V @ 250μA | 8.57nC @ 5V | 95 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI1051X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1051xt1ge3-datasheets-0074.pdf | SOT-563, SOT-666 | 6 | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | FLAT | 260 | 6 | Single | 40 | 1 | Other Transistors | 7.2 ns | 36ns | 36 ns | 52 ns | 1.2A | 5V | SILICON | SWITCHING | 8V | 236mW Ta | -8V | P-Channel | 560pF @ 4V | 122m Ω @ 1.2A, 4.5V | 1V @ 250μA | 9.45nC @ 5V | 1.5V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||
| FDB12N50UTM_WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 1.31247g | 3 | No | Single | 165W | 1 | 35 ns | 45ns | 35 ns | 60 ns | 10A | 30V | 165W Tc | 500V | N-Channel | 1395pF @ 25V | 800m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB3N60CTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | /files/onsemiconductor-fqb3n60ctm-datasheets-0149.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 600V | 75W Tc | N-Channel | 565pF @ 25V | 3.4Ohm @ 1.5A, 10V | 4V @ 250μA | 3A Tc | 14nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB5411NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntp5411ng-datasheets-3088.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 166W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 122ns | 113 ns | 116 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 166W Tc | 280 mJ | 60V | N-Channel | 4500pF @ 25V | 10m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTMFS4851NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4851nt1g-datasheets-9985.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 5 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 2.16W | 1 | FET General Purpose Power | Not Qualified | 39.8ns | 5.2 ns | 18.6 ns | 66A | 16V | SILICON | DRAIN | SWITCHING | 870mW Ta 41.7W Tc | 100A | 0.0087Ohm | 30V | N-Channel | 1850pF @ 12V | 5.9m Ω @ 30A, 10V | 2.5V @ 250μA | 9.5A Ta 66A Tc | 20nC @ 4.5V | 4.5V 11.5V | ±16V | |||||||||||||||||||||||||||||||||||
| SIA443DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia443djt1e3-datasheets-6259.pdf | PowerPAK® SC-70-6 | Lead Free | 3 | Unknown | 45MOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | Single | 40 | 3.3W | 1 | Other Transistors | S-XDSO-N3 | 100ns | 75 ns | 40 ns | -9A | 8V | SILICON | DRAIN | SWITCHING | -1V | 3.3W Ta 15W Tc | 9A | 20A | 20V | P-Channel | 750pF @ 10V | -1 V | 45m Ω @ 4.7A, 4.5V | 1V @ 250μA | 9A Tc | 25nC @ 8V | 1.8V 4.5V | ±8V |
