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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFS4010PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfsl4010pbf-datasheets-3814.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | No SVHC | 4.7MOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 21 ns | 86ns | 77 ns | 100 ns | 180A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 375W Tc | 72 ns | 720A | 100V | N-Channel | 9575pF @ 50V | 4 V | 4.7m Ω @ 106A, 10V | 4V @ 250μA | 180A Tc | 215nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| SI4660DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4660dyt1ge3-datasheets-0598.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 1 | FET General Purpose Power | 25 ns | 14ns | 22 ns | 95 ns | 23.1A | 16V | SILICON | SWITCHING | 25V | 25V | 3.1W Ta 5.6W Tc | N-Channel | 2410pF @ 15V | 5.8m Ω @ 15A, 10V | 2.2V @ 250μA | 23.1A Tc | 45nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| IRF7704GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 1.5W | 1 | 8-TSSOP | 3.15nF | 4.6A | 20V | 40V | 1.5W Ta | 74mOhm | -40V | P-Channel | 3150pF @ 25V | 46mOhm @ 4.6A, 10V | 3V @ 250μA | 4.6A Ta | 38nC @ 4.5V | 46 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7921TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfh7921tr2pbf-datasheets-8395.pdf | 8-PowerVDFN | 5.2324mm | 1.1684mm | 6.2484mm | Lead Free | No SVHC | 8.5MOhm | 8 | EAR99 | No | 3.1W | 1 | FET General Purpose Power | 12 ns | 7.6ns | 4.7 ns | 14 ns | 15mA | 20V | 30V | Single | 3.1W Ta | 34A | 30V | N-Channel | 1210pF @ 15V | 1.8 V | 8.5m Ω @ 15A, 10V | 2.35V @ 25μA | 15A Ta 34A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF7705GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineon-irf7705gtrpbf-datasheets-4197.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 1.5W | 8-TSSOP | 2.774nF | 8A | 20V | 30V | 1.5W Ta | 30mOhm | -30V | P-Channel | 2774pF @ 25V | 18mOhm @ 8A, 10V | 2.5V @ 250μA | 8A Ta | 88nC @ 10V | 18 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4010-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfs4010trl7pp-datasheets-6668.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.67mm | 4.55mm | 9.65mm | Lead Free | 6 | No SVHC | 7 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 380W | 1 | FET General Purpose Power | R-PSSO-G6 | 19 ns | 56ns | 48 ns | 100 ns | 190A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 380W Tc | 60 ns | 0.004Ohm | 330 mJ | 100V | N-Channel | 9830pF @ 50V | 4 V | 4m Ω @ 110A, 10V | 4V @ 250μA | 190A Tc | 230nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| SI4110DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4110dyt1ge3-datasheets-0568.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | Unknown | 13mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 30 | 7.8W | 1 | FET General Purpose Power | 18 ns | 10ns | 8 ns | 22 ns | 17.3A | 20V | SILICON | SINGLE | SWITCHING | 2V | 3.6W Ta 7.8W Tc | 80V | N-Channel | 2205pF @ 40V | 13m Ω @ 11.7A, 10V | 4V @ 250μA | 17.3A Tc | 53nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI4688DY-T1-GE3 | Vishay Siliconix | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4688dyt1ge3-datasheets-0576.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 1 | Single | 8-SO | 1.58nF | 13 ns | 10ns | 10 ns | 33 ns | 12A | 20V | 30V | 1.4W Ta | 11mOhm | N-Channel | 1580pF @ 15V | 11mOhm @ 12A, 10V | 3V @ 250μA | 8.9A Ta | 38nC @ 10V | 11 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI4448DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4448dyt1e3-datasheets-0578.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 3.5W | 1 | 38 ns | 22ns | 33 ns | 240 ns | 32A | 8V | SILICON | SWITCHING | 3.5W Ta 7.8W Tc | 12V | N-Channel | 12350pF @ 6V | 1.7m Ω @ 20A, 4.5V | 1V @ 250μA | 50A Tc | 150nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SI7882DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7882dpt1ge3-datasheets-0309.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Powers | R-PDSO-C5 | 28 ns | 32ns | 32 ns | 82 ns | 22A | 8V | SILICON | DRAIN | SWITCHING | 1.4V | 1.9W Ta | 50A | 0.0055Ohm | 7.2 mJ | 12V | N-Channel | 5.5m Ω @ 17A, 4.5V | 1.4V @ 250μA | 13A Ta | 30nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||
| SI4170DY-T1-GE3 | Vishay Siliconix | $2.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4170dyt1ge3-datasheets-0566.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 540.001716mg | 8 | No | 1 | 3W | 1 | 8-SO | 4.355nF | 36 ns | 17ns | 20 ns | 45 ns | 30A | 20V | 30V | 3W Ta 6W Tc | 3.5mOhm | 30V | N-Channel | 4355pF @ 15V | 3.5mOhm @ 15A, 10V | 2.6V @ 250μA | 30A Tc | 100nC @ 10V | 3.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIR468DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sir468dpt1ge3-datasheets-0477.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 15 Weeks | 506.605978mg | Unknown | 5.7mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 25 ns | 9ns | 9 ns | 30 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 5W Ta 50W Tc | 22.7A | 70A | 30V | N-Channel | 1720pF @ 15V | 5.7m Ω @ 20A, 10V | 3V @ 250μA | 40A Tc | 44nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| SIR496DP-T1-GE3 | Vishay Siliconix | $0.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir496dpt1ge3-datasheets-0443.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Powers | R-XDSO-C5 | 21 ns | 13ns | 17 ns | 29 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 5W Ta 27.7W Tc | 70A | 0.0045Ohm | 20 mJ | 20V | N-Channel | 1570pF @ 10V | 4.5m Ω @ 20A, 10V | 2.5V @ 250μA | 35A Tc | 42nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| SIB800EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib800edkt1ge3-datasheets-0465.pdf | PowerPAK® SC-75-6L | 6 | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | Single | 40 | 1 | FET General Purpose Power | 20 ns | 12ns | 20 ns | 70 ns | 1.5A | 6V | SILICON | DRAIN | SWITCHING | 20V | 20V | 1.1W Ta 3.1W Tc | 0.225Ohm | N-Channel | 225m Ω @ 1.6A, 4.5V | 1V @ 250μA | 1.5A Tc | 1.7nC @ 4.5V | Schottky Diode (Isolated) | 1.5V 4.5V | ±6V | ||||||||||||||||||||||||||||||||||||||
| SI1046X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1046xt1ge3-datasheets-0125.pdf | SC-89, SOT-490 | 3 | 420mOhm | yes | EAR99 | unknown | e3 | PURE MATTE TIN | DUAL | FLAT | 260 | 3 | Single | 30 | 250mW | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-F3 | 19ns | 19 ns | 76 ns | 606mA | 8V | SILICON | SWITCHING | 250mW Ta | 0.606A | 20V | N-Channel | 66pF @ 10V | 420m Ω @ 606mA, 4.5V | 950mV @ 250μA | 1.49nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SIR892DP-T1-GE3 | Vishay Siliconix | $1.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir892dpt1ge3-datasheets-0488.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 15 Weeks | 506.605978mg | Unknown | 3.2mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Powers | R-XDSO-C5 | 30 ns | 18ns | 25 ns | 40 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 2.6V | 5W Ta 50W Tc | 30A | 70A | 25V | N-Channel | 2645pF @ 10V | 3.2m Ω @ 10A, 10V | 2.6V @ 250μA | 50A Tc | 60nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| SIR866DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir866dpt1ge3-datasheets-0504.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 13 Weeks | 506.605978mg | Unknown | 1.9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 5.4W | 1 | FET General Purpose Power | R-XDSO-C5 | 42 ns | 23ns | 49 ns | 66 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.3V | 5.4W Ta 83W Tc | 39A | 20V | N-Channel | 4730pF @ 10V | 1.9m Ω @ 20A, 10V | 2.3V @ 250μA | 60A Tc | 107nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| SI4108DY-T1-GE3 | Vishay Siliconix | $2.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4108dyt1ge3-datasheets-0524.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 7.8W | DUAL | GULL WING | 260 | 8 | 40 | 7.8W | 1 | 11ns | 9 ns | 23 ns | 20.5A | 20V | SINGLE WITH BUILT-IN DIODE | SWITCHING | MS-012AA | 60A | 51.2 mJ | 75V | N-Channel | 2100pF @ 38V | 9.8m Ω @ 13.8A, 10V | 4V @ 250μA | 20.5A Tc | 54nC @ 10V | ||||||||||||||||||||||||||||||||||||||
| SIR888DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir888dpt1ge3-datasheets-0520.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 8 | No | 1 | PowerPAK® SO-8 | 5.065nF | 32 ns | 14ns | 11 ns | 40 ns | 40A | 16V | 25V | 5W Ta 48W Tc | 3.25mOhm | N-Channel | 5065pF @ 15V | 3.25mOhm @ 15A, 10V | 2.2V @ 250μA | 40A Tc | 120nC @ 10V | 3.25 mΩ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| SI7186DP-T1-GE3 | Vishay Siliconix | $18.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7186dpt1ge3-datasheets-0201.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-C5 | 25 ns | 11ns | 10 ns | 32 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 64W Tc | 60A | 45 mJ | 80V | N-Channel | 2840pF @ 40V | 12.5m Ω @ 10A, 10V | 4.5V @ 250μA | 32A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIS426DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis426dnt1ge3-datasheets-0511.pdf | PowerPAK® 1212-8 | 3.3mm | 3.3mm | Lead Free | 5 | Unknown | 4.5mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.7W | 1 | FET General Purpose Power | S-XDSO-C5 | 21 ns | 13ns | 17 ns | 29 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 3.7W Ta 52W Tc | 22A | 70A | 20 mJ | 20V | N-Channel | 1570pF @ 10V | 4.5m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 42nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| SIA450DJ-T1-GE3 | Vishay Siliconix | $1.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia450djt1e3-datasheets-6346.pdf | PowerPAK® SC-70-6 | 3 | Unknown | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 6 | Single | 40 | 15W | 1 | FET General Purpose Power | S-XDSO-C3 | 13.7 ns | 22ns | 19 ns | 23 ns | 1.52A | 20V | SILICON | DRAIN | SWITCHING | 2.4V | 3.3W Ta 15W Tc | 0.7A | 240V | N-Channel | 167pF @ 120V | 2.9 Ω @ 700mA, 10V | 2.4V @ 250μA | 1.52A Tc | 7.04nC @ 10V | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| NTR3161NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntr3161nt1g-datasheets-0461.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.25W | 1 | FET General Purpose Power | Not Qualified | 11.6ns | 23.2 ns | 18.6 ns | 3.3A | 8V | SILICON | SWITCHING | 820mW Ta | 4A | 0.05Ohm | 20V | N-Channel | 540pF @ 10V | 50m Ω @ 3.3A, 4.5V | 1V @ 250μA | 7.3nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SIR840DP-T1-GE3 | Vishay Siliconix | $0.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | PowerPAK® SO-8 | 506.605978mg | 1 | PowerPAK® SO-8 | 30V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR476DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir476dpt1ge3-datasheets-0428.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | R-XDSO-C5 | 50 ns | 31ns | 48 ns | 60 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 6.25W Ta 104W Tc | 45A | 25V | N-Channel | 6150pF @ 10V | 1.7m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 135nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SIA814DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sia814djt1ge3-datasheets-0370.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | Unknown | 61mOhm | 6 | yes | EAR99 | No | 260 | 6 | 40 | 1.9W | 1 | FET General Purpose Power | 12ns | 12 ns | 15 ns | 4.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.5V | 1.9W Ta 6.5W Tc | 30V | N-Channel | 340pF @ 10V | 1.5 V | 61m Ω @ 3.3A, 10V | 1.5V @ 250μA | 4.5A Tc | 11nC @ 10V | Schottky Diode (Isolated) | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SI7784DP-T1-GE3 | Vishay Siliconix | $7.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7784dpt1ge3-datasheets-0268.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 506.605978mg | Unknown | 6mOhm | 8 | No | 1 | Single | 5W | 1 | PowerPAK® SO-8 | 1.6nF | 22 ns | 13ns | 12 ns | 26 ns | 35A | 20V | 30V | 2.5V | 5W Ta 27.7W Tc | 6.5mOhm | 30V | N-Channel | 1600pF @ 15V | 6mOhm @ 20A, 10V | 2.5V @ 250μA | 35A Tc | 45nC @ 10V | 6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI7601DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7601dnt1ge3-datasheets-0272.pdf | PowerPAK® 1212-8 | 8 | Single | PowerPAK® 1212-8 | 1.87nF | 18 ns | 112ns | 80 ns | 53 ns | -16A | 12V | 20V | 3.8W Ta 52W Tc | 19mOhm | P-Channel | 1870pF @ 10V | 19.2mOhm @ 11A, 4.5V | 1.6V @ 250μA | 16A Tc | 27nC @ 5V | 19.2 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB419DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib419dkt1ge3-datasheets-0341.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | 95.991485mg | Unknown | 6 | 1 | 2.45W | 1 | PowerPAK® SC-75-6L Single | 562pF | 16 ns | 42ns | 9 ns | 28 ns | -9A | 8V | 12V | 12V | -1V | 2.45W Ta 13.1W Tc | 89mOhm | -12V | P-Channel | 562pF @ 6V | -1 V | 60mOhm @ 5.2A, 4.5V | 1V @ 250μA | 9A Tc | 11.82nC @ 5V | 60 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SIB417DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib417dkt1ge3-datasheets-0352.pdf | PowerPAK® SC-75-6L | 3 | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 40 | 2.4W | 1 | Other Transistors | S-XDSO-N3 | 13 ns | 31ns | 18 ns | 35 ns | -9A | 5V | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 9A | 15A | 0.052Ohm | -8V | P-Channel | 675pF @ 4V | -1 V | 52m Ω @ 5.6A, 4.5V | 1V @ 250μA | 9A Tc | 12.75nC @ 5V | 1.2V 4.5V | ±5V |
