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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TPCA8012-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | 45W | 45W | 4.2ns | 8.3 ns | 40A | 20V | 30V | N-Channel | 3713pF @ 10V | 4.9m Ω @ 20A, 10V | 2.5V @ 1mA | 40A Ta | 42nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK12A60U(Q,M) | Toshiba Semiconductor and Storage | $0.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | No | Single | 35W | TO-220SIS | 720pF | 30ns | 8 ns | 12A | 30V | 600V | 35W Tc | 400mOhm | 600V | N-Channel | 720pF @ 10V | 400mOhm @ 6A, 10V | 5V @ 1mA | 12A Ta | 14nC @ 10V | 400 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8010-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 200V | 1.6W Ta 45W Tc | N-Channel | 600pF @ 10V | 450m Ω @ 2.7A, 10V | 4V @ 1mA | 5.5A Ta | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8A02-H(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpc8a02hte12lq-datasheets-0891.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | unknown | 1.9W | 6ns | 12 ns | 16A | 20V | 1W Ta | 30V | N-Channel | 1970pF @ 10V | 5.6m Ω @ 8A, 10V | 2.3V @ 1mA | 16A Ta | 34nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8038-H(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSV-H | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | unknown | 30V | N-Channel | 2150pF @ 10V | 11.4m Ω @ 6A, 10V | 2.5V @ 1mA | 12A Ta | 21nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8008-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8008hte12lq-datasheets-9781.pdf | 8-PowerVDFN | 8 | No | 45W | 8ns | 13 ns | 4A | 20V | 1.6W Ta 45W Tc | 250V | N-Channel | 600pF @ 10V | 580m Ω @ 2A, 10V | 4V @ 1mA | 4A Ta | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC6107(TE85L,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Silver, Tin | No | 2.2W | VS-6 (2.9x2.8) | 680pF | 145ns | 92 ns | 142 ns | 4.5A | 12V | 20V | 700mW Ta | 55mOhm | -20V | P-Channel | 680pF @ 10V | 55mOhm @ 2.2A, 4.5V | 1.2V @ 200μA | 4.5A Ta | 9.8nC @ 5V | 55 mΩ | 2V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7703TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7703trpbf-datasheets-0692.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | No SVHC | 28MOhm | 8 | 1.5W | 8-TSSOP | 5.22nF | 43 ns | 155 ns | -6A | 20V | -40V | 40V | 1.5W Ta | 45mOhm | -40V | P-Channel | 5220pF @ 25V | -3 V | 28mOhm @ 6A, 10V | 3V @ 250μA | 6A Ta | 62nC @ 4.5V | 28 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI5475DDC-T1-GE3 | Vishay Siliconix | $5.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5475ddct1ge3-datasheets-0454.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 84.99187mg | Unknown | 32mOhm | 8 | Tin | No | 6A | 12V | 1 | Single | 5.7W | 1 | 1206-8 ChipFET™ | 1.6nF | 20 ns | 40ns | 40 ns | 45 ns | -6A | 8V | 12V | -400mV | 2.3W Ta 5.7W Tc | 32mOhm | -12V | P-Channel | 1600pF @ 6V | 32mOhm @ 5.4A, 4.5V | 1V @ 250μA | 6A Tc | 50nC @ 8V | 32 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| IRF6713STR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6713str1pbf-datasheets-0675.pdf | DirectFET™ Isometric SQ | 3.95mm | 508μm | 3.95mm | Lead Free | No SVHC | 3MOhm | 6 | No | 2.2W | 1 | DIRECTFET™ SQ | 2.88nF | 12 ns | 13ns | 6 ns | 9.2 ns | 22A | 20V | 25V | 25V | 1.9V | 2.2W Ta 42W Tc | 30 ns | 4.6mOhm | 25V | N-Channel | 2880pF @ 13V | 1.9 V | 3mOhm @ 22A, 10V | 2.4V @ 50μA | 22A Ta 95A Tc | 32nC @ 4.5V | 3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| TPC8110(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-SOP (5.5x6.0) | 40V | 1W Ta | P-Channel | 2180pF @ 10V | 25mOhm @ 4A, 10V | 2V @ 1mA | 8A Ta | 48nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8005-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8005hte12lqm-datasheets-0924.pdf | 8-PowerVDFN | 8 | 45W | 3ns | 8 ns | 27A | 20V | 1.6W Ta 45W Tc | 30V | N-Channel | 1395pF @ 10V | 9m Ω @ 14A, 10V | 2.3V @ 1mA | 27A Ta | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8115(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 20V | 1W Ta | P-Channel | 9130pF @ 10V | 10m Ω @ 5A, 4.5V | 1.2V @ 200μA | 10A Ta | 115nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3107-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfs31077ppbf-datasheets-0853.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 6 | 14 Weeks | No SVHC | 2.6MOhm | 7 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 370W | 1 | FET General Purpose Power | R-PSSO-G6 | 17 ns | 80ns | 64 ns | 100 ns | 260A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 370W Tc | 52 ns | 240A | 320 mJ | 75V | N-Channel | 9200pF @ 50V | 4 V | 2.6m Ω @ 160A, 10V | 4V @ 250μA | 240A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IRF6720S2TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6720s2tr1pbf-datasheets-0880.pdf | DirectFET™ Isometric S1 | 3.95mm | 558.8μm | 3.95mm | Lead Free | No SVHC | 8MOhm | 6 | No | 17W | 1 | DIRECTFET S1 | 1.14nF | 13 ns | 35ns | 11 ns | 11 ns | 11A | 20V | 30V | 30V | 1.9V | 1.7W Ta 17W Tc | 24 ns | 12.8mOhm | 30V | N-Channel | 1140pF @ 15V | 2 V | 8mOhm @ 11A, 10V | 2.35V @ 25μA | 11A Ta 35A Tc | 12nC @ 4.5V | 8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| 2SK2266(TE24R,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2266te24rq-datasheets-0885.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 60V | 65W Tc | N-Channel | 1800pF @ 10V | 30m Ω @ 25A, 10V | 2V @ 1mA | 45A Ta | 60nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK55D10J1(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk55d10j1q-datasheets-0887.pdf | TO-220-3 | Lead Free | Single | 140W | TO-220(W) | 5.7nF | 7ns | 20 ns | 55A | 20V | 100V | 140W Tc | 10.5mOhm | 100V | N-Channel | 5700pF @ 10V | 10.5mOhm @ 27A, 10V | 2.3V @ 1mA | 55A Ta | 110nC @ 10V | 10.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TK70D06J1(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk70d06j1q-datasheets-0888.pdf | TO-220-3 | Lead Free | Single | 140W | TO-220(W) | 5.45nF | 70A | 20V | 60V | 45W Tc | 5.1mOhm | 60V | N-Channel | 5450pF @ 10V | 6.4mOhm @ 35A, 10V | 2.3V @ 1mA | 70A Ta | 87nC @ 10V | 6.4 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6795MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-irf6795mtrpbf-datasheets-4565.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | No SVHC | 1.8MOhm | 5 | EAR99 | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | BOTTOM | 260 | 30 | 2.8W | 1 | R-XBCC-N3 | 16 ns | 27ns | 11 ns | 16 ns | 32A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 75W Tc | 41 ns | 25V | N-Channel | 4280pF @ 13V | 1.8 V | 1.8m Ω @ 32A, 10V | 2.35V @ 100μA | 32A Ta 160A Tc | 53nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IRF7706GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 1.51W | 8-TSSOP | 2.211nF | 7A | 20V | 30V | 1.51W Ta | 36mOhm | -30V | P-Channel | 2211pF @ 25V | 22mOhm @ 7A, 10V | 2.5V @ 250μA | 7A Ta | 72nC @ 10V | 22 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7707GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7707gtrpbf-datasheets-0687.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | Single | 1.5W | 8-TSSOP | 2.361nF | 81ns | 207 ns | 7A | 20V | 1.5W Ta | 22mOhm | -20V | P-Channel | 2361pF @ 15V | 22mOhm @ 7A, 4.5V | 1.2V @ 250μA | 7A Ta | 47nC @ 4.5V | 22 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6797MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6797mtrpbf-datasheets-3607.pdf | DirectFET™ Isometric MX | 5.45mm | 508μm | 5.05mm | Lead Free | No SVHC | 2.4MOhm | 7 | No | 2.8W | 1 | DIRECTFET™ MX | 5.79nF | 22 ns | 32ns | 15 ns | 20 ns | 36A | 20V | 25V | 25V | 1.8V | 2.8W Ta 89W Tc | 45 ns | 2.4mOhm | 25V | N-Channel | 5790pF @ 13V | 1.8 V | 1.4mOhm @ 38A, 10V | 2.35V @ 150μA | 36A Ta 210A Tc | 68nC @ 4.5V | 1.4 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| TPC8021-H(TE12LQ,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpc8021hte12lqm-datasheets-0825.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | 1.9W | 8-SOP (5.5x6.0) | 640pF | 4ns | 4 ns | 11A | 20V | 30V | 1W Ta | 17mOhm | 30V | N-Channel | 640pF @ 10V | 17mOhm @ 5.5A, 10V | 2.3V @ 1mA | 11A Ta | 11nC @ 10V | 17 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STY80NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-247-3 | 15.9mm | 20.3mm | 5.3mm | Lead Free | 3 | No SVHC | 35MOhm | 3 | EAR99 | No | e3 | MATTE TIN | 225 | STY80N | 3 | Single | 447W | 1 | FET General Purpose Power | 50 ns | 65ns | 200 ns | 440 ns | 37A | 25V | SILICON | SWITCHING | 3V | 447W Tc | 74A | 600V | N-Channel | 10100pF @ 50V | 35m Ω @ 37A, 10V | 4V @ 250μA | 74A Tc | 360nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| IRFS3006-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfs3006trl7pp-datasheets-0537.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 24 Weeks | No SVHC | 2.1MOhm | 7 | EAR99 | No | Single | 375W | 1 | 14 ns | 61ns | 69 ns | 118 ns | 293A | 20V | 4V | 375W Tc | 60V | N-Channel | 8850pF @ 50V | 2.1m Ω @ 168A, 10V | 4V @ 250μA | 240A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDS6688AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds6688as-datasheets-0697.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 2.5W | 1 | 22ns | 29 ns | 34 ns | 14.5A | 20V | 2.5W Ta | 30V | N-Channel | 2510pF @ 15V | 6m Ω @ 14.5A, 10V | 3V @ 250μA | 14.5A Ta | 63nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8014(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpc8014te12lqm-datasheets-0849.pdf | 8-SOIC (0.173, 4.40mm Width) | 14mOhm | 8 | Single | 1W | 8-SOP (5.5x6.0) | 1.86nF | 19ns | 69 ns | 20 ns | 11A | 30V | 1W Ta | 22mOhm | 30V | N-Channel | 1860pF @ 10V | 14mOhm @ 5.5A, 10V | 2.5V @ 1mA | 11A Ta | 39nC @ 10V | 14 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3309(TE24L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3309te24lq-datasheets-0851.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220SM | 450V | 65W Tc | N-Channel | 920pF @ 10V | 650mOhm @ 5A, 10V | 5V @ 1mA | 10A Ta | 23nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4010PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfsl4010pbf-datasheets-3814.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | No SVHC | 4.7MOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 21 ns | 86ns | 77 ns | 100 ns | 180A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 375W Tc | 72 ns | 720A | 100V | N-Channel | 9575pF @ 50V | 4 V | 4.7m Ω @ 106A, 10V | 4V @ 250μA | 180A Tc | 215nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| SI4660DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4660dyt1ge3-datasheets-0598.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 1 | FET General Purpose Power | 25 ns | 14ns | 22 ns | 95 ns | 23.1A | 16V | SILICON | SWITCHING | 25V | 25V | 3.1W Ta 5.6W Tc | N-Channel | 2410pF @ 15V | 5.8m Ω @ 15A, 10V | 2.2V @ 250μA | 23.1A Tc | 45nC @ 10V | 4.5V 10V | ±16V |
