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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFK80N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n20-datasheets-8620.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 35MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 55ns | 26 ns | 120 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 200V | N-Channel | 5900pF @ 25V | 30m Ω @ 500mA, 10V | 4V @ 4mA | 80A Tc | 280nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFN100N10S1 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfn100n10s1-datasheets-8622.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 360W Tc | 0.0125Ohm | N-Channel | 4500pF @ 25V | 15m Ω @ 500mA, 10V | 4V @ 4mA | 100A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFL55N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | ISOPLUS264™ | 55A | 500V | N-Channel | 55A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFL34N100 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/ixys-ixfl34n100-datasheets-8625.pdf | ISOPLUS264™ | Lead Free | 3 | 280mOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | FET General Purpose Power | Not Qualified | 65ns | 30 ns | 110 ns | 30A | 20V | SILICON | ISOLATED | SWITCHING | 1000V | 550W Tc | 4000 mJ | 1kV | N-Channel | 9200pF @ 25V | 280m Ω @ 30A, 10V | 5V @ 8mA | 30A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFK50N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-ixfn50n50-datasheets-0988.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 100MOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 60ns | 45 ns | 120 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 200A | 500V | N-Channel | 9400pF @ 25V | 80m Ω @ 25A, 10V | 4.5V @ 8mA | 50A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFN100N10S2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/ixys-ixfn100n10s1-datasheets-8622.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 360W Tc | 0.0125Ohm | N-Channel | 4500pF @ 25V | 15m Ω @ 500mA, 10V | 4V @ 4mA | 100A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFN340N06 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn340n06-datasheets-8631.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 95ns | 33 ns | 200 ns | 340A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700W Tc | 1360A | 0.003Ohm | 60V | N-Channel | 16800pF @ 25V | 3m Ω @ 100A, 10V | 4V @ 8mA | 340A Tc | 600nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFK35N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk33n50-datasheets-8544.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | FET General Purpose Power | Not Qualified | 42ns | 23 ns | 110 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 140A | 0.15Ohm | 2500 mJ | 500V | N-Channel | 5700pF @ 25V | 150m Ω @ 16.5A, 10V | 4V @ 4mA | 35A Tc | 227nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFK52N30Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n30q-datasheets-5986.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 60ns | 25 ns | 80 ns | 52A | 20V | SILICON | DRAIN | 360W Tc | 208A | 0.06Ohm | 1500 mJ | 300V | N-Channel | 5300pF @ 25V | 60m Ω @ 500mA, 10V | 4V @ 4mA | 52A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFK25N90 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx26n90-datasheets-7456.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 35ns | 24 ns | 130 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 100A | 900V | N-Channel | 10800pF @ 25V | 330m Ω @ 500mA, 10V | 5V @ 8mA | 25A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFN180N07 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn180n07-datasheets-8616.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 60ns | 60 ns | 100 ns | 180A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 520W Tc | 600A | 0.007Ohm | 2000 mJ | 70V | N-Channel | 9000pF @ 25V | 7m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 480nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFJ32N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfj32n50q-datasheets-8538.pdf | TO-220-3, Short Tab | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 42ns | 20 ns | 75 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-268AA | 128A | 0.15Ohm | 1500 mJ | 500V | N-Channel | 3950pF @ 25V | 150m Ω @ 16A, 10V | 4V @ 4mA | 32A Tc | 153nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFK48N55 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk48n55-datasheets-8541.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 48A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 550V | 550V | 560W Tc | 192A | 0.11Ohm | N-Channel | 8900pF @ 25V | 110m Ω @ 24A, 10V | 4.5V @ 8mA | 48A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFK180N085 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk180n085-datasheets-8542.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 90ns | 55 ns | 140 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 720A | 0.007Ohm | 85V | N-Channel | 9100pF @ 25V | 7m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 320nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFK33N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk33n50-datasheets-8544.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 150mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 416W | 1 | FET General Purpose Power | 42ns | 23 ns | 110 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 2500 mJ | 500V | N-Channel | 5700pF @ 25V | 160m Ω @ 16.5A, 10V | 4V @ 4mA | 33A Tc | 227nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRLSL3034PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irls3034trlpbf-datasheets-6203.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | 3 | No | Single | 375W | 1 | TO-262 | 10.315nF | 65 ns | 827ns | 355 ns | 97 ns | 195A | 20V | 40V | 375W Tc | 1.7mOhm | 40V | N-Channel | 10315pF @ 25V | 1.7mOhm @ 195A, 10V | 2.5V @ 250μA | 195A Tc | 162nC @ 4.5V | 1.7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFK100N25 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfk100n25-datasheets-8553.pdf | TO-264-3, TO-264AA | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 55ns | 40 ns | 110 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 400A | 0.027Ohm | 250V | N-Channel | 9100pF @ 25V | 27m Ω @ 50A, 10V | 4V @ 8mA | 100A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFH3707TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/infineontechnologies-irfh3707trpbf-datasheets-5107.pdf | 8-PowerVDFN | 2.9972mm | 939.8μm | 2.9972mm | Lead Free | No SVHC | 12.4MOhm | 8 | No | Single | 2.8W | 1 | 8-PQFN (3x3) | 755pF | 7.8 ns | 11ns | 5.6 ns | 9.9 ns | 12A | 20V | 30V | 1.8V | 2.8W Ta | 30 ns | 12.4mOhm | 30V | N-Channel | 755pF @ 15V | 1.8 V | 12.4mOhm @ 12A, 10V | 2.35V @ 25μA | 12A Ta 29A Tc | 8.1nC @ 4.5V | 12.4 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IPP80N06S209AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb80n06s209atma1-datasheets-3943.pdf | TO-220-3 | 3 | EAR99 | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 190W Tc | TO-220AB | 80A | 320A | 0.0091Ohm | 370 mJ | N-Channel | 2360pF @ 25V | 9.1m Ω @ 50A, 10V | 4V @ 125μA | 80A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFK170N10 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n10-datasheets-8585.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 10mOhm | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 90ns | 79 ns | 158 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 680A | 100V | N-Channel | 10300pF @ 25V | 10m Ω @ 500mA, 10V | 4V @ 8mA | 170A Tc | 515nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPP50R250CPHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp50r250cpxksa1-datasheets-3225.pdf | TO-220-3 | 3 | 3 | SINGLE | 1 | 35 ns | 14ns | 11 ns | 80 ns | 13A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 114W Tc | TO-220AB | 0.25Ohm | N-Channel | 1420pF @ 100V | 250m Ω @ 7.8A, 10V | 3.5V @ 520μA | 13A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFK30N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfk30n50q-datasheets-8591.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | Not Qualified | 42ns | 20 ns | 75 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 120A | 0.16Ohm | 1500 mJ | 500V | N-Channel | 3950pF @ 25V | 160m Ω @ 15A, 10V | 4.5V @ 4mA | 30A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFK180N07 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-ixfx180n07-datasheets-5254.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 560W | 1 | FET General Purpose Power | 90ns | 55 ns | 140 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 568W Tc | 720A | 0.006Ohm | 70V | N-Channel | 9400pF @ 25V | 6m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 420nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFJ40N30 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfj40n30-datasheets-8534.pdf | TO-220-3, Short Tab | Lead Free | 3 | 80MOhm | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 60ns | 45 ns | 75 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-268AA | 160A | 300V | N-Channel | 4800pF @ 25V | 80m Ω @ 20A, 10V | 4V @ 4mA | 40A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFK20N80Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixft20n80q-datasheets-7388.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 420mOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 27ns | 14 ns | 74 ns | 20A | 20V | SILICON | DRAIN | 360W Tc | 80A | 800V | N-Channel | 5100pF @ 25V | 420m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFC24N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfc26n50-datasheets-8452.pdf | ISOPLUS220™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | 33ns | 30 ns | 65 ns | 21A | 20V | SILICON | ISOLATED | SWITCHING | 230W Tc | 84A | 500V | N-Channel | 4200pF @ 25V | 230m Ω @ 12A, 10V | 4V @ 4mA | 21A Tc | 135nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFC13N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfc13n50-datasheets-8500.pdf | ISOPLUS220™ | 3 | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 140W | 1 | Not Qualified | 27ns | 32 ns | 76 ns | 12A | 20V | SILICON | ISOLATED | SWITCHING | 140W Tc | 48A | 0.4Ohm | 500V | N-Channel | 2800pF @ 25V | 400m Ω @ 6.5A, 10V | 4V @ 2.5mA | 12A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFE44N60 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfe44n60-datasheets-8502.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 55ns | 45 ns | 110 ns | 41A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500W Tc | 176A | 0.13Ohm | 3000 mJ | 600V | N-Channel | 8900pF @ 25V | 130m Ω @ 22A, 10V | 4.5V @ 8mA | 41A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFC80N085 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfc80n085-datasheets-8504.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | 75ns | 31 ns | 95 ns | 80A | 20V | SILICON | ISOLATED | SWITCHING | 230W Tc | 75A | 0.011Ohm | 1000 mJ | 85V | N-Channel | 4800pF @ 25V | 11m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFH75N10Q | IXYS | $8.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/ixys-ixfh75n10q-datasheets-8506.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 65ns | 28 ns | 65 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.02Ohm | 100V | N-Channel | 3700pF @ 25V | 20m Ω @ 37.5A, 10V | 4V @ 4mA | 75A Tc | 180nC @ 10V | 10V | ±20V |
