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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFX25N90 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx26n90-datasheets-7456.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 35ns | 24 ns | 130 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 100A | 900V | N-Channel | 10800pF @ 25V | 330m Ω @ 500mA, 10V | 5V @ 8mA | 25A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFX180N085 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk180n085-datasheets-8542.pdf | TO-247-3 | 3 | Single | 560W | PLUS247™-3 | 9.1nF | 90ns | 55 ns | 140 ns | 180A | 20V | 85V | 560W Tc | 7mOhm | 85V | N-Channel | 9100pF @ 25V | 7mOhm @ 500mA, 10V | 4V @ 8mA | 180A Tc | 320nC @ 10V | 7 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFT74N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh74n20-datasheets-8472.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 55ns | 26 ns | 120 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 296A | 0.3Ohm | 200V | N-Channel | 5400pF @ 25V | 30m Ω @ 500mA, 10V | 4V @ 4mA | 74A Tc | 280nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFT6N100Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh6n100q-datasheets-1418.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 8 Weeks | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 180W | 1 | FET General Purpose Power | R-PSSO-G2 | 15ns | 12 ns | 22 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 180W Tc | 6A | 24A | 2Ohm | 700 mJ | 1kV | N-Channel | 2200pF @ 25V | 1.9 Ω @ 3A, 10V | 4.5V @ 2.5mA | 6A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFR80N10Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr80n10q-datasheets-8688.pdf | ISOPLUS247™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 310W | 1 | Not Qualified | 70ns | 30 ns | 68 ns | 76A | 20V | SILICON | ISOLATED | SWITCHING | 310W Tc | 0.015Ohm | 1500 mJ | 100V | N-Channel | 4500pF @ 25V | 15m Ω @ 76A, 10V | 76A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFX150N15 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/ixys-ixfx150n15-datasheets-8690.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | 60ns | 45 ns | 110 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 600A | 0.0125Ohm | 150V | N-Channel | 9100pF @ 25V | 12.5m Ω @ 75A, 10V | 4V @ 8mA | 150A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFN100N25 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn100n25-datasheets-8664.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | 55ns | 40 ns | 110 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600W Tc | 0.027Ohm | 3000 mJ | 250V | N-Channel | 9100pF @ 25V | 27m Ω @ 500mA, 10V | 4V @ 8mA | 100A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFN48N50U3 | IXYS | $4.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n50u2-datasheets-8648.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | 260 | 4 | Single | 35 | 520W | 1 | FET General Purpose Power | Not Qualified | 60ns | 30 ns | 100 ns | 48A | 20V | SILICON | ISOLATED | SWITCHING | 520W Tc | 192A | 0.08Ohm | 500V | N-Channel | 8400pF @ 25V | 100m Ω @ 500mA, 10V | 4V @ 8mA | 48A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFK80N20Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n20q-datasheets-5589.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 50ns | 20 ns | 75 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.028Ohm | 1500 mJ | 200V | N-Channel | 4600pF @ 25V | 28m Ω @ 500mA, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFT80N15Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n15q-datasheets-4484.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 55ns | 20 ns | 68 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 320A | 0.0225Ohm | 1500 mJ | 150V | N-Channel | 4500pF @ 25V | 22.5m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFN80N48 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn80n48-datasheets-8672.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 70ns | 27 ns | 102 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700W Tc | 320A | 6000 mJ | 480V | N-Channel | 9890pF @ 25V | 45m Ω @ 500mA, 10V | 4V @ 8mA | 80A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFR180N06 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr180n06-datasheets-8674.pdf | ISOPLUS247™ | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | 100ns | 55 ns | 130 ns | 180A | 20V | SILICON | ISOLATED | SWITCHING | 560W Tc | 720A | 0.005Ohm | 60V | N-Channel | 7650pF @ 25V | 5m Ω @ 90A, 10V | 4V @ 8mA | 180A Tc | 420nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFX14N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx15n100-datasheets-8076.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 30ns | 30 ns | 120 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 360W Tc | 56A | 0.75Ohm | 1kV | N-Channel | 4500pF @ 25V | 750m Ω @ 500mA, 10V | 4.5V @ 4mA | 14A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFR75N10Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | ISOPLUS247™ | 100V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT32N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft30n50-datasheets-4425.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 42ns | 26 ns | 110 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 128A | 0.15Ohm | 1500 mJ | 500V | N-Channel | 5700pF @ 25V | 150m Ω @ 15A, 10V | 4V @ 4mA | 32A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFE55N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe50n50-datasheets-0976.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 60ns | 45 ns | 120 ns | 47A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500W Tc | 200A | 0.09Ohm | 500V | N-Channel | 9400pF @ 25V | 90m Ω @ 27.5A, 10V | 4.5V @ 8mA | 47A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFR150N15 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr150n15-datasheets-8652.pdf | ISOPLUS247™ | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 60ns | 45 ns | 110 ns | 105A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 600A | 0.0125Ohm | 150V | N-Channel | 9100pF @ 25V | 12.5m Ω @ 75A, 10V | 4V @ 8mA | 105A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFR30N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr30n50q-datasheets-8654.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | 42ns | 20 ns | 75 ns | 30A | 20V | SILICON | ISOLATED | SWITCHING | 310W Tc | 29A | 120A | 0.16Ohm | 1500 mJ | 500V | N-Channel | 3950pF @ 25V | 160m Ω @ 15A, 10V | 4V @ 4mA | 30A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFR180N085 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr180n085-datasheets-8656.pdf | ISOPLUS247™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 90ns | 55 ns | 140 ns | 180A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 720A | 0.007Ohm | 85V | N-Channel | 9100pF @ 25V | 7m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 320nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFR55N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfr50n50-datasheets-7374.pdf | ISOPLUS247™ | Lead Free | 3 | 90MOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 400W | 1 | FET General Purpose Power | 60ns | 45 ns | 120 ns | 48A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 220A | 500V | N-Channel | 9400pF @ 25V | 90m Ω @ 27.5A, 10V | 4.5V @ 8mA | 48A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFX100N25 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfk100n25-datasheets-8553.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 55ns | 40 ns | 110 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 400A | 0.027Ohm | 250V | N-Channel | 9100pF @ 25V | 27m Ω @ 50A, 10V | 4V @ 8mA | 100A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFT14N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx15n100-datasheets-8076.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30ns | 30 ns | 120 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 360W Tc | 56A | 0.75Ohm | 1kV | N-Channel | 4500pF @ 25V | 750m Ω @ 500mA, 10V | 4.5V @ 4mA | 14A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFN180N10 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfn180n10-datasheets-8633.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 42g | No SVHC | 8MOhm | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | 2.5kV | 90ns | 65 ns | 140 ns | 180A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 600W Tc | 250 ns | 720A | 3000 mJ | 100V | N-Channel | 9100pF @ 25V | 4 V | 8m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| IXFK60N25Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft60n25q-datasheets-7464.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 60ns | 25 ns | 80 ns | 60A | 20V | SILICON | DRAIN | 360W Tc | 240A | 0.047Ohm | 1500 mJ | 250V | N-Channel | 5100pF @ 25V | 47m Ω @ 500mA, 10V | 4V @ 4mA | 60A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPP80N06S2L05AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s2l05atma1-datasheets-4210.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | 300W Tc | TO-220AB | 80A | 320A | 0.006Ohm | 800 mJ | N-Channel | 5700pF @ 25V | 4.8m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFN170N10 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n10-datasheets-8585.pdf | SOT-227-4, miniBLOC | 4 | 8 Weeks | No SVHC | 10mOhm | 3 | yes | EAR99 | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 90ns | 79 ns | 158 ns | 170A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 600W Tc | 680A | 100V | N-Channel | 10300pF @ 25V | 4 V | 10m Ω @ 500mA, 10V | 4V @ 8mA | 170A Tc | 515nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFR180N07 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr180n07-datasheets-8644.pdf | ISOPLUS247™ | Lead Free | 3 | 8 Weeks | 6MOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 90ns | 55 ns | 140 ns | 180A | 20V | SILICON | ISOLATED | SWITCHING | 417W Tc | 720A | 70V | N-Channel | 9400pF @ 25V | 6m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 420nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFR100N25 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfr100n25-datasheets-8646.pdf | ISOPLUS247™ | Lead Free | 3 | 27MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 55ns | 40 ns | 110 ns | 87A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 400A | 250V | N-Channel | 9100pF @ 25V | 27m Ω @ 50A, 10V | 4V @ 8mA | 87A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFN44N50U2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n50u2-datasheets-8648.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | UPPER | UNSPECIFIED | 260 | 4 | 35 | 1 | FET General Purpose Power | Not Qualified | 44A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 520W Tc | 176A | 0.12Ohm | N-Channel | 8400pF @ 25V | 120m Ω @ 500mA, 10V | 4V @ 8mA | 44A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFN180N07 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn180n07-datasheets-8616.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 60ns | 60 ns | 100 ns | 180A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 520W Tc | 600A | 0.007Ohm | 2000 mJ | 70V | N-Channel | 9000pF @ 25V | 7m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 480nC @ 10V | 10V | ±20V |
