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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRL2505STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineon-irl2505strr-datasheets-2176.pdf | 55V | 104A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | D2PAK | 5nF | 160ns | 104A | 55V | 3.8W Ta 200W Tc | N-Channel | 5000pF @ 25V | 8mOhm @ 54A, 10V | 2V @ 250μA | 104A Tc | 130nC @ 5V | 8 mΩ | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRL3202STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 69W Tc | 48A | 190A | 0.019Ohm | 270 mJ | N-Channel | 2000pF @ 15V | 16m Ω @ 29A, 7V | 700mV @ 250μA | 48A Tc | 43nC @ 4.5V | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||
| IRFZ34L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz34strlpbf-datasheets-9466.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262-3 | 1.2nF | 30A | 60V | 3.7W Ta 88W Tc | N-Channel | 1200pF @ 25V | 50mOhm @ 18A, 10V | 4V @ 250μA | 30A Tc | 46nC @ 10V | 50 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3402STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3402spbf-datasheets-9934.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 110W Tc | N-Channel | 3300pF @ 15V | 8m Ω @ 51A, 7V | 700mV @ 250μA | 85A Tc | 78nC @ 4.5V | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3103STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2002 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 30V | 94W Tc | N-Channel | 1650pF @ 25V | 12mOhm @ 34A, 10V | 1V @ 250μA | 64A Tc | 33nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3102STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 89W Tc | N-Channel | 2500pF @ 15V | 13mOhm @ 37A, 7V | 700mV @ 250μA | 61A Tc | 58nC @ 4.5V | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3103D1STRR | Vishay Siliconix | $9.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3.1W | 64A | 30V | N-Channel | 1900pF @ 25V | 14m Ω @ 34A, 10V | 1V @ 250μA | 64A Tc | 43nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48S | Vishay Siliconix | $1.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz48spbf-datasheets-5795.pdf | 60V | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.54mm | 4.69mm | 8.81mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 2.4nF | 8.1 ns | 250ns | 250 ns | 210 ns | 50A | 20V | 60V | 3.7W Ta 190W Tc | 18mOhm | N-Channel | 2400pF @ 25V | 18mOhm @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRL2203NSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 30V | 3.8W Ta 180W Tc | N-Channel | 3290pF @ 25V | 7mOhm @ 60A, 10V | 3V @ 250μA | 116A Tc | 60nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3302STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | EAR99 | 20V | 57W Tc | N-Channel | 1300pF @ 15V | 20m Ω @ 23A, 7V | 700mV @ 250μA | 39A Tc | 31nC @ 4.5V | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3302L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3302-datasheets-0728.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262-3 | 1.3nF | 39A | 20V | 57W Tc | N-Channel | 1300pF @ 15V | 20mOhm @ 23A, 7V | 700mV @ 250μA | 39A Tc | 31nC @ 4.5V | 20 mΩ | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL2910STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 200W Tc | 55A | 190A | 0.03Ohm | 520 mJ | N-Channel | 3700pF @ 25V | 26m Ω @ 29A, 10V | 2V @ 250μA | 55A Tc | 140nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| IRL3102STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | EAR99 | 20V | 89W Tc | N-Channel | 2500pF @ 15V | 13m Ω @ 37A, 7V | 700mV @ 250μA | 61A Tc | 58nC @ 4.5V | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL2505STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | 55V | 104A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | 160ns | 104A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.8W Ta 200W Tc | 360A | 0.01Ohm | 500 mJ | N-Channel | 5000pF @ 25V | 8m Ω @ 54A, 10V | 2V @ 250μA | 104A Tc | 130nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| IRL3303D1S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3303-datasheets-8670.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | 68W Tc | N-Channel | 870pF @ 25V | 26m Ω @ 20A, 10V | 1V @ 250μA | 38A Tc | 26nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz48spbf-datasheets-5795.pdf | 60V | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | no | EAR99 | HIGH RELIABILITY | unknown | 8541.29.00.95 | SINGLE | GULL WING | 225 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.7W Ta 190W Tc | 290A | 0.018Ohm | 100 mJ | N-Channel | 2400pF @ 25V | 18m Ω @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRL3103D2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-220-3 | EAR99 | NO | 150°C | FET General Purpose Power | Single | 30V | 2W Ta 70W Tc | 54A | N-Channel | 2300pF @ 25V | 14m Ω @ 32A, 10V | 1V @ 250μA | 54A Tc | 44nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL1004STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.8W Ta 200W Tc | 130A | 520A | 0.0065Ohm | 700 mJ | N-Channel | 5330pF @ 25V | 6.5m Ω @ 78A, 10V | 1V @ 250μA | 130A Tc | 100nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| IRFR9220TRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | -200V | -3.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Contains Lead | 1.437803g | 1 | Single | D-Pak | 340pF | 8.8 ns | 27ns | 19 ns | 7.3 ns | 3.6A | 20V | 200V | 2.5W Ta 42W Tc | 1.5Ohm | -200V | P-Channel | 340pF @ 25V | 1.5Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 20nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRL3302STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 57W Tc | 39A | 160A | 0.023Ohm | 130 mJ | N-Channel | 1300pF @ 15V | 20m Ω @ 23A, 7V | 700mV @ 250μA | 39A Tc | 31nC @ 4.5V | 4.5V 7V | ±10V | |||||||||||||||||||||||||||||||||||||
| IRFZ46NSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 107W Tc | 39A | 180A | 0.0165Ohm | 152 mJ | N-Channel | 1696pF @ 25V | 16.5m Ω @ 28A, 10V | 4V @ 250μA | 53A Tc | 72nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRL2703STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1996 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | 45W Tc | N-Channel | 450pF @ 25V | 40m Ω @ 14A, 10V | 1V @ 250μA | 24A Tc | 15nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL2703STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1996 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 45W Tc | 24A | 96A | 0.04Ohm | 77 mJ | N-Channel | 450pF @ 25V | 40m Ω @ 14A, 10V | 1V @ 250μA | 24A Tc | 15nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| IRFZ48L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz48spbf-datasheets-5795.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262-3 | 2.4nF | 50A | 60V | 3.7W Ta 190W Tc | N-Channel | 2400pF @ 25V | 18mOhm @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ34S | Vishay Siliconix | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz34strlpbf-datasheets-9466.pdf | 60V | 30A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.54mm | 4.69mm | 8.81mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 1.2nF | 13 ns | 100ns | 52 ns | 29 ns | 30A | 20V | 60V | 3.7W Ta 88W Tc | 50mOhm | N-Channel | 1200pF @ 25V | 50mOhm @ 18A, 10V | 4V @ 250μA | 30A Tc | 46nC @ 10V | 50 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFZ24STRL | Vishay Siliconix | $1.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz24s-datasheets-0641.pdf | 60V | 17A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.54mm | 4.69mm | 8.81mm | Contains Lead | 1.437803g | 1 | Single | D2PAK | 640pF | 13 ns | 58ns | 42 ns | 25 ns | 17A | 20V | 60V | 3.7W Ta 60W Tc | 100mOhm | N-Channel | 640pF @ 25V | 100mOhm @ 10A, 10V | 4V @ 250μA | 17A Tc | 25nC @ 10V | 100 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFZ34STRL | Vishay Siliconix | $8.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz34strlpbf-datasheets-9466.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | D2PAK | 1.2nF | 30A | 60V | 3.7W Ta 88W Tc | N-Channel | 1200pF @ 25V | 50mOhm @ 18A, 10V | 4V @ 250μA | 30A Tc | 46nC @ 10V | 50 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ24STRR | Vishay Siliconix | $1.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz24s-datasheets-0641.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | 8541.29.00.95 | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 17A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3.7W Ta 60W Tc | 68A | 0.1Ohm | 100 mJ | N-Channel | 640pF @ 25V | 100m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFR9120NTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | /files/infineontechnologies-irfu9120n-datasheets-0744.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 40W Tc | TO-252AA | 6.6A | 26A | 0.48Ohm | 100 mJ | P-Channel | 350pF @ 25V | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 6.6A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFZ14STRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz14spbf-datasheets-7501.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 1.437803g | 3 | 1 | Single | D2PAK | 300pF | 10 ns | 50ns | 19 ns | 13 ns | 10A | 20V | 60V | 3.7W Ta 43W Tc | 200mOhm | N-Channel | 300pF @ 25V | 200mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 11nC @ 10V | 200 mΩ | 10V | ±20V |
