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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| ZXM66N02N8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxm66n02n8ta-datasheets-5277.pdf | 20V | 9.9A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | EAR99 | unknown | e3 | MATTE TIN | 2.5W | DUAL | GULL WING | 260 | 8 | 40 | 1 | Not Qualified | R-PDSO-G8 | 9A | SINGLE WITH BUILT-IN DIODE | SWITCHING | 9A | 0.015Ohm | N-Channel | 15m Ω @ 4.1A, 4.5V | 700mV @ 250μA | 9A Ta | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH26N60Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/ixys-ixft26n60q-datasheets-7390.pdf | 600V | 26A | TO-247-3 | Lead Free | 3 | 8 Weeks | 6g | No SVHC | 250mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 360W | 1 | 32ns | 16 ns | 80 ns | 26A | 20V | 600V | SILICON | DRAIN | SWITCHING | 4.5V | 360W Tc | TO-247AD | 250 ns | 600V | N-Channel | 5100pF @ 25V | 4.5 V | 250m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| HUFA75344P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-hufa75344s3-datasheets-5326.pdf | TO-220-3 | TO-220-3 | 55V | 285W Tc | N-Channel | 3200pF @ 25V | 8mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 210nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR12N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1kV | 12A | ISOPLUS247™ | Lead Free | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 1000V | 48A | N-Channel | 2900pF @ 25V | 1.1 Ω @ 6A, 10V | 5.5V @ 4mA | 10A Tc | 90nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFX90N30 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfx90n30-datasheets-5288.pdf | 300V | 90A | TO-247-3 | Lead Free | 3 | 8 Weeks | 33MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 560W | 1 | FET General Purpose Power | 55ns | 40 ns | 100 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 300V | N-Channel | 10000pF @ 25V | 33m Ω @ 45A, 10V | 4V @ 8mA | 90A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFX180N07 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx180n07-datasheets-5254.pdf | 70V | 180A | TO-247-3 | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 90ns | 55 ns | 140 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 568W Tc | 720A | 0.006Ohm | 70V | N-Channel | 9400pF @ 25V | 6m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 420nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SFP9634 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-sfp9634-datasheets-5256.pdf | TO-220-3 | TO-220-3 | 250V | 70W Tc | P-Channel | 975pF @ 25V | 1.3Ohm @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 37nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN3310ASTOB | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn3310a-datasheets-8837.pdf | 100V | 200mA | E-Line-3 | Lead Free | 3 | 453.59237mg | No SVHC | EAR99 | unknown | e3 | MATTE TIN | WIRE | 260 | 3 | 1 | Single | 40 | 625mW | 1 | Not Qualified | R-PSIP-W3 | 5 ns | 7ns | 7 ns | 6 ns | 200mA | 20V | SILICON | SWITCHING | 625mW Ta | 0.2A | 100V | N-Channel | 40pF @ 25V | 10 Ω @ 500mA, 10V | 2.4V @ 1mA | 200mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| ZXMN2A05N8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 20V | 12A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 2.5W | 8-SO | 7.6A | 20V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN130N30 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-ixfn130n30-datasheets-5212.pdf | 300V | 130A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 36mg | No SVHC | 22mOhm | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 75ns | 31 ns | 130 ns | 130A | 20V | 300V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 700W Tc | 250 ns | 520A | 300V | N-Channel | 14500pF @ 25V | 4 V | 22m Ω @ 500mA, 10V | 4V @ 8mA | 130A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| ZVN4206AVSTOA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn4206av-datasheets-8992.pdf | 60V | 600mA | E-Line-3 | Lead Free | 453.59237mg | No SVHC | 1 | Single | 700mW | E-Line (TO-92 compatible) | 100pF | 8 ns | 12ns | 12 ns | 12 ns | 600mA | 20V | 60V | 700mW Ta | 1.5Ohm | 60V | N-Channel | 100pF @ 25V | 1Ohm @ 1.5A, 10V | 3V @ 1mA | 600mA Ta | 1 Ω | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPI35CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd33cn10ngbuma1-datasheets-4125.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 58W Tc | 27A | 108A | 0.035Ohm | 47 mJ | N-Channel | 1570pF @ 50V | 35m Ω @ 27A, 10V | 4V @ 29μA | 27A Tc | 24nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFR34N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfr34n80-datasheets-5220.pdf | 800V | 28A | ISOPLUS247™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 45ns | 40 ns | 100 ns | 28A | 20V | SILICON | ISOLATED | SWITCHING | 416W Tc | 600A | 0.24Ohm | 800V | N-Channel | 7500pF @ 25V | 240m Ω @ 17A, 10V | 4V @ 8mA | 28A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTH13N110 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth13n110-datasheets-5222.pdf | 1.1kV | 13A | TO-247-3 | Lead Free | 3 | 8 Weeks | 920mOhm | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 21ns | 36 ns | 80 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 1100V | 360W Tc | TO-247AD | 52A | 1.1kV | N-Channel | 5650pF @ 25V | 920m Ω @ 500mA, 10V | 4.5V @ 250μA | 13A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| 2SK353900L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk353900l-datasheets-5224.pdf | 50V | 1A | SC-70, SOT-323 | Lead Free | SMini3-G1 | 12pF | 100mA | 50V | 150mW Ta | N-Channel | 12pF @ 3V | 15Ohm @ 10mA, 2.5V | 1.5V @ 1μA | 100mA Ta | 15 Ω | 2.5V 4V | ±7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSH22N50A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ssh22n50a-datasheets-5226.pdf | TO-3P-3, SC-65-3 | TO-3P | 500V | 278W Tc | N-Channel | 5120pF @ 25V | 250mOhm @ 11A, 10V | 4V @ 250μA | 22A Tc | 236nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL640STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl640strlpbf-datasheets-2956.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 3 | 1 | Single | D2PAK | 1.8nF | 8 ns | 83ns | 52 ns | 44 ns | 17A | 10V | 200V | 3.1W Ta 125W Tc | 180mOhm | 200V | N-Channel | 1800pF @ 25V | 180mOhm @ 10A, 5V | 2V @ 250μA | 17A Tc | 66nC @ 5V | 180 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI2910 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-220-3 Full Pack | 3 | EAR99 | AVALANCHE RATED | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 63W Tc | TO-220AB | 31A | 190A | 0.03Ohm | 520 mJ | N-Channel | 3700pF @ 25V | 26m Ω @ 16A, 10V | 2V @ 250μA | 31A Tc | 140nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN2A02X8TA | Diodes Incorporated | $0.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmn2a02x8ta-datasheets-9963.pdf | 20V | 5.8A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3.1mm | 950μm | 3.1mm | Lead Free | 139.989945mg | No SVHC | 20mOhm | 8 | No | 1 | 1.67W | 1 | 8-MSOP | 1.9nF | 7.9 ns | 10ns | 13.6 ns | 33.3 ns | 7.8A | 20V | 20V | 1.1W Ta | 40mOhm | 20V | N-Channel | 1900pF @ 10V | 20mOhm @ 11A, 4.5V | 700mV @ 250μA | 6.2A Ta | 18.6nC @ 4.5V | 20 mΩ | 2.5V 4.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRLMS2002TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | SOT-23-6 | 6 | EAR99 | ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 6.5A | 20A | 0.03Ohm | N-Channel | 1310pF @ 15V | 30m Ω @ 6.5A, 4.5V | 1.2V @ 250μA | 6.5A Ta | 22nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB17N50L | Vishay Siliconix | $0.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb17n50lpbf-datasheets-5152.pdf | 500V | 16A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 220W | 1 | TO-220AB | 2.76nF | 21 ns | 51ns | 28 ns | 50 ns | 16A | 30V | 500V | 220W Tc | 320mOhm | N-Channel | 2760pF @ 25V | 320mOhm @ 9.9A, 10V | 5V @ 250μA | 16A Tc | 130nC @ 10V | 320 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRFR9210TRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu9210pbf-datasheets-5149.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 1.437803g | 3 | 1 | Single | D-Pak | 170pF | 8 ns | 12ns | 13 ns | 11 ns | 1.9A | 20V | 200V | 2.5W Ta 25W Tc | 3Ohm | -200V | P-Channel | 170pF @ 25V | 3Ohm @ 1.1A, 10V | 4V @ 250μA | 1.9A Tc | 8.9nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRL5602STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl5602s-datasheets-8106.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 75W Tc | P-Channel | 1460pF @ 15V | 42m Ω @ 12A, 4.5V | 1V @ 250μA | 24A Tc | 44nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ44STRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | 1.437803g | 1 | Single | D2PAK | 3.3nF | 17 ns | 230ns | 110 ns | 42 ns | 50A | 10V | 60V | 3.7W Ta 150W Tc | 28mOhm | 60V | N-Channel | 3300pF @ 25V | 28mOhm @ 31A, 5V | 2V @ 250μA | 50A Tc | 66nC @ 5V | 28 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9214TRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9214trpbf-datasheets-8548.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 220pF | 2.7A | 250V | 50W Tc | P-Channel | 220pF @ 25V | 3Ohm @ 1.7A, 10V | 4V @ 250μA | 2.7A Tc | 14nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN3A05N8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 30V | 12A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 2.5W | 8-SO | 100mA | 30V | N-Channel | 75 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7526D1TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | EAR99 | YES | NOT SPECIFIED | NOT SPECIFIED | Other Transistors | Single | 30V | 1.25W Ta | 2A | P-Channel | 180pF @ 25V | 200m Ω @ 1.2A, 10V | 1V @ 250μA | 2A Ta | 11nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ24NSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 45W Tc | 18A | 72A | 0.075Ohm | 68 mJ | N-Channel | 480pF @ 25V | 60m Ω @ 11A, 10V | 2V @ 250μA | 18A Tc | 15nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFU220N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu220n-datasheets-5159.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 245 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 43W Tc | 5A | 20A | 0.6Ohm | 46 mJ | N-Channel | 300pF @ 25V | 600m Ω @ 2.9A, 10V | 4V @ 250μA | 5A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8503TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30V | 62W Tc | N-Channel | 1650pF @ 25V | 16m Ω @ 15A, 10V | 3V @ 250μA | 44A Tc | 20nC @ 5V | 4.5V 10V | ±20V |
