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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFZ44STRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz44spbf-datasheets-3540.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 3 | 1 | Single | D2PAK | 1.9nF | 14 ns | 110ns | 92 ns | 45 ns | 50A | 20V | 60V | 3.7W Ta 150W Tc | 28mOhm | 60V | N-Channel | 1900pF @ 25V | 28mOhm @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 28 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFZ44L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz44spbf-datasheets-3540.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | 8541.29.00.95 | e0 | TIN LEAD | SINGLE | 240 | 3 | 30 | 1 | Not Qualified | R-PSIP-T3 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 3.7W Ta 150W Tc | 200A | 0.028Ohm | 100 mJ | N-Channel | 1900pF @ 25V | 28m Ω @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFZ34S | Vishay Siliconix | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz34strlpbf-datasheets-9466.pdf | 60V | 30A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.54mm | 4.69mm | 8.81mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 1.2nF | 13 ns | 100ns | 52 ns | 29 ns | 30A | 20V | 60V | 3.7W Ta 88W Tc | 50mOhm | N-Channel | 1200pF @ 25V | 50mOhm @ 18A, 10V | 4V @ 250μA | 30A Tc | 46nC @ 10V | 50 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFZ24STRL | Vishay Siliconix | $1.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz24s-datasheets-0641.pdf | 60V | 17A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.54mm | 4.69mm | 8.81mm | Contains Lead | 1.437803g | 1 | Single | D2PAK | 640pF | 13 ns | 58ns | 42 ns | 25 ns | 17A | 20V | 60V | 3.7W Ta 60W Tc | 100mOhm | N-Channel | 640pF @ 25V | 100mOhm @ 10A, 10V | 4V @ 250μA | 17A Tc | 25nC @ 10V | 100 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFZ34STRL | Vishay Siliconix | $8.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz34strlpbf-datasheets-9466.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | D2PAK | 1.2nF | 30A | 60V | 3.7W Ta 88W Tc | N-Channel | 1200pF @ 25V | 50mOhm @ 18A, 10V | 4V @ 250μA | 30A Tc | 46nC @ 10V | 50 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ24STRR | Vishay Siliconix | $1.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz24s-datasheets-0641.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | 8541.29.00.95 | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 17A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3.7W Ta 60W Tc | 68A | 0.1Ohm | 100 mJ | N-Channel | 640pF @ 25V | 100m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFR9120NTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | /files/infineontechnologies-irfu9120n-datasheets-0744.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 40W Tc | TO-252AA | 6.6A | 26A | 0.48Ohm | 100 mJ | P-Channel | 350pF @ 25V | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 6.6A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFZ14STRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz14spbf-datasheets-7501.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 1.437803g | 3 | 1 | Single | D2PAK | 300pF | 10 ns | 50ns | 19 ns | 13 ns | 10A | 20V | 60V | 3.7W Ta 43W Tc | 200mOhm | N-Channel | 300pF @ 25V | 200mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 11nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPI80CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb79cn10ng-datasheets-4178.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 31W Tc | 13A | 52A | 0.08Ohm | 17 mJ | N-Channel | 716pF @ 50V | 80m Ω @ 13A, 10V | 4V @ 12μA | 13A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPI80N04S2H4AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n04s2h4atma2-datasheets-4370.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | No | 23 ns | 63ns | 22 ns | 46 ns | 80A | 20V | 40V | 300W Tc | N-Channel | 4400pF @ 25V | 4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 148nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44NSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 94W Tc | 49A | 160A | 0.0175Ohm | 150 mJ | N-Channel | 1470pF @ 25V | 17.5m Ω @ 25A, 10V | 4V @ 250μA | 49A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFZ44ESTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | 60V | 48A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | 60ns | 48A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 110W Tc | 192A | 0.023Ohm | 220 mJ | N-Channel | 1360pF @ 25V | 23m Ω @ 29A, 10V | 4V @ 250μA | 48A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFR9120NTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu9120n-datasheets-0744.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 100V | 40W Tc | P-Channel | 350pF @ 25V | 480mOhm @ 3.9A, 10V | 4V @ 250μA | 6.6A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ24NSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN OVER NICKEL | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | R-PDSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 45W Tc | 17A | 68A | 0.07Ohm | 71 mJ | N-Channel | 370pF @ 25V | 70m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFS31N20DTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | /files/infineontechnologies-irfsl31n20d-datasheets-1506.pdf | 200V | 31A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 38ns | 31A | SILICON | SINGLE | DRAIN | SWITCHING | 3.1W Ta 200W Tc | 124A | 0.082Ohm | 420 mJ | N-Channel | 2370pF @ 25V | 82m Ω @ 18A, 10V | 5.5V @ 250μA | 31A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRFR9120TRR | Vishay Siliconix | $5.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9120trpbf-datasheets-5334.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 390pF | 5.6A | 100V | 2.5W Ta 42W Tc | P-Channel | 390pF @ 25V | 600mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ14L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz14spbf-datasheets-7501.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262-3 | 300pF | 10A | 60V | 3.7W Ta 43W Tc | N-Channel | 300pF @ 25V | 200mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 11nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL9N60ATRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfsl9n60apbf-datasheets-3597.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | no | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | 9.2A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 170W Tc | 37A | 0.75Ohm | 290 mJ | N-Channel | 1400pF @ 25V | 750m Ω @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRFSL31N20DTRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfsl31n20d-datasheets-1506.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 31A | 200V | 3.1W Ta 200W Tc | N-Channel | 2370pF @ 25V | 82m Ω @ 18A, 10V | 5.5V @ 250μA | 31A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL31N20DTRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfsl31n20d-datasheets-1506.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 31A | 200V | 3.1W Ta 200W Tc | N-Channel | 2370pF @ 25V | 82m Ω @ 18A, 10V | 5.5V @ 250μA | 31A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL41N15D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.1W Ta | 41A | 164A | 0.045Ohm | 470 mJ | N-Channel | 2520pF @ 25V | 45m Ω @ 25A, 10V | 5.5V @ 250μA | 41A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRFS9N60ATRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs9n60apbf-datasheets-3643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 1 | Single | D2PAK | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 9.2A | 30V | 600V | 170W Tc | 750mOhm | N-Channel | 1400pF @ 25V | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRFU9010 | Vishay Siliconix | $4.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9010pbf-datasheets-4325.pdf | -50V | -5.3A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 3 | Single | TO-251AA | 240pF | 47ns | 5.3A | 50V | 25W Tc | -50V | P-Channel | 240pF @ 25V | 500mOhm @ 2.8A, 10V | 4V @ 250μA | 5.3A Tc | 9.1nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFR9014NTR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9014trpbf-datasheets-0184.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 5.1A | 60V | 2.5W Ta 25W Tc | P-Channel | 270pF @ 25V | 500m Ω @ 3.1A, 10V | 4V @ 250μA | 5.1A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30S | Vishay Siliconix | $0.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbe30lpbf-datasheets-7866.pdf | 800V | 4.1A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 1 | Single | D2PAK | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 125W Tc | 3Ohm | 800V | N-Channel | 1300pF @ 25V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPI16CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb16cn10ng-datasheets-3887.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 100W Tc | 53A | 212A | 0.0162Ohm | 107 mJ | N-Channel | 3220pF @ 50V | 16.2m Ω @ 53A, 10V | 4V @ 61μA | 53A Tc | 48nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFS31N20DTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfsl31n20d-datasheets-1506.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | 8541.21.00.95 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3.1W Ta 200W Tc | 31A | 124A | 0.082Ohm | 420 mJ | N-Channel | 2370pF @ 25V | 82m Ω @ 18A, 10V | 5.5V @ 250μA | 31A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRFR4105TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineon-irfr4105trl-datasheets-2132.pdf | 55V | 25A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 68W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 49ns | 27A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 68W Tc | TO-252AA | 20A | 0.045Ohm | 65 mJ | N-Channel | 700pF @ 25V | 45m Ω @ 16A, 10V | 4V @ 250μA | 27A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IRFR9220TRL | Vishay Siliconix | $0.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 1.437803g | 3 | 1 | Single | D-Pak | 340pF | 8.8 ns | 27ns | 19 ns | 7.3 ns | 3.6A | 20V | 200V | 2.5W Ta 42W Tc | 1.5Ohm | -200V | P-Channel | 340pF @ 25V | 1.5Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 20nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFS11N50ATRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs11n50atrlp-datasheets-5178.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 1.423nF | 11A | 500V | 170W Tc | N-Channel | 1423pF @ 25V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V |
