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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | Number of Pins | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLR8503TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 30V | 62W Tc | N-Channel | 1650pF @ 25V | 16mOhm @ 15A, 10V | 3V @ 250μA | 44A Tc | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8103TRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 89W | 89A | 30V | N-Channel | 7m Ω @ 15A, 10V | 2V @ 250μA (Min) | 89A Ta | 50nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz14spbf-datasheets-8912.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 1.437803g | 3 | 1 | Single | D2PAK | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 10A | 10V | 60V | 3.7W Ta 43W Tc | 200mOhm | N-Channel | 400pF @ 25V | 200mOhm @ 6A, 5V | 2V @ 250μA | 10A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||
| IRL620STRR | Vishay Siliconix | $0.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl620spbf-datasheets-5093.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 360pF | 5.2A | 200V | 3.1W Ta 50W Tc | N-Channel | 360pF @ 25V | 800mOhm @ 3.1A, 10V | 2V @ 250μA | 5.2A Tc | 16nC @ 5V | 800 mΩ | 4V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR014TRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu014pbf-datasheets-7963.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 7.7A | 60V | 2.5W Ta 25W Tc | N-Channel | 400pF @ 25V | 200m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 8.4nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3103TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 30V | 107W Tc | N-Channel | 1600pF @ 25V | 19mOhm @ 33A, 10V | 1V @ 250μA | 55A Tc | 50nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8103 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr8103tr-datasheets-5019.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 89W Ta | TO-252AA | 89A | 350A | 0.0085Ohm | N-Channel | 7m Ω @ 15A, 10V | 2V @ 250μA (Min) | 89A Ta | 50nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRL5602L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl5602s-datasheets-8106.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 20V | P-Channel | 1460pF @ 15V | 42m Ω @ 12A, 4.5V | 1V @ 250μA | 24A Tc | 44nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR2703TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlu2703-datasheets-1564.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 45W Tc | TO-252AA | 20A | 96A | 0.045Ohm | 200 mJ | N-Channel | 450pF @ 25V | 45m Ω @ 14A, 10V | 1V @ 250μA | 23A Tc | 15nC @ 4.5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||
| IRLR014NTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-252-3, DPak (2 Leads + Tab), SC-63 | YES | FET General Purpose Power | Single | 55V | 28W Tc | 10A | N-Channel | 265pF @ 25V | 140m Ω @ 6A, 10V | 1V @ 250μA | 10A Tc | 7.9nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR2705TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-942335-datasheets-1202.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 68W Tc | TO-252AA | 28A | 110A | 0.051Ohm | 110 mJ | N-Channel | 880pF @ 25V | 40m Ω @ 17A, 10V | 2V @ 250μA | 28A Tc | 25nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||
| IRLR8103TRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 89W | 89A | 30V | N-Channel | 7m Ω @ 15A, 10V | 2V @ 250μA (Min) | 89A Ta | 50nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3410TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineon-irlr3410trl-datasheets-2207.pdf | 100V | 15A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 53ns | 17A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 79W Tc | TO-252AA | 60A | 0.125Ohm | 150 mJ | N-Channel | 800pF @ 25V | 105m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||
| IRL640STRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl640strlpbf-datasheets-2956.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 3 | 1 | Single | 3.1W | 1 | D2PAK | 1.8nF | 8 ns | 83ns | 52 ns | 44 ns | 17A | 10V | 200V | 3.1W Ta 125W Tc | 180mOhm | 200V | N-Channel | 1800pF @ 25V | 180mOhm @ 10A, 5V | 2V @ 250μA | 17A Tc | 66nC @ 5V | 180 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||
| IRLR8103TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr8103tr-datasheets-5019.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 89W Tc | TO-252AA | 89A | 350A | 0.0085Ohm | N-Channel | 7m Ω @ 15A, 10V | 2V @ 250μA (Min) | 89A Ta | 50nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRLR3303TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30V | 68W Tc | N-Channel | 870pF @ 25V | 31m Ω @ 21A, 10V | 1V @ 250μA | 35A Tc | 26nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI520G | Vishay Siliconix | $4.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi520g-datasheets-4976.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 6.000006g | 3 | No | 1 | Single | TO-220-3 | 360pF | 8.8 ns | 30ns | 20 ns | 19 ns | 7.2A | 20V | 100V | 37W Tc | 270mOhm | N-Channel | 360pF @ 25V | 270mOhm @ 4.3A, 10V | 4V @ 250μA | 7.2A Tc | 16nC @ 10V | 270 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRLR120NTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr120ntrr-datasheets-5029.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | YES | FET General Purpose Power | Single | 100V | 48W Tc | 10A | N-Channel | 440pF @ 25V | 185m Ω @ 6A, 10V | 2V @ 250μA | 10A Tc | 20nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL540L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.54mm | 8.76mm | 4.7mm | 3 | 6.000006g | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | 3.7W | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 8.5 ns | 170ns | 80 ns | 35 ns | 28A | 10V | DRAIN | SWITCHING | TO-220AB | 0.077Ohm | 100V | N-Channel | 2200pF @ 25V | 77m Ω @ 17A, 5V | 28A Tc | 64nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||
| IRFI4905 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-220-3 Full Pack | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | 55V | 63W Tc | TO-220AB | 41A | 260A | 0.02Ohm | 930 mJ | P-Channel | 3400pF @ 25V | 20m Ω @ 22A, 10V | 4V @ 250μA | 41A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRL520STRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl520s-datasheets-4937.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 490pF | 9.2A | 100V | 3.7W Ta 60W Tc | N-Channel | 490pF @ 25V | 270mOhm @ 5.5A, 5V | 2V @ 250μA | 9.2A Tc | 12nC @ 5V | 270 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL630STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 1 | Single | D2PAK | 1.1nF | 8 ns | 57ns | 33 ns | 38 ns | 9A | 10V | 200V | 3.1W Ta 74W Tc | 400mOhm | 200V | N-Channel | 1100pF @ 25V | 400mOhm @ 5.4A, 5V | 2V @ 250μA | 9A Tc | 40nC @ 10V | 400 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||
| IRLR110TRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu110pbf-datasheets-8636.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 250pF | 4.3A | 100V | 2.5W Ta 25W Tc | N-Channel | 250pF @ 25V | 540mOhm @ 2.6A, 5V | 2V @ 250μA | 4.3A Tc | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR024NTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlu024n-datasheets-0860.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 45W Tc | TO-252AA | 17A | 72A | 0.08Ohm | 68 mJ | N-Channel | 480pF @ 25V | 65m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 15nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||
| IRLR024TRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlr024trr-datasheets-4992.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 870pF | 14A | 60V | 2.5W Ta 42W Tc | N-Channel | 870pF @ 25V | 100mOhm @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR2705TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-942335-datasheets-1202.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 68W Tc | TO-252AA | 28A | 110A | 0.051Ohm | 110 mJ | N-Channel | 880pF @ 25V | 40m Ω @ 17A, 10V | 2V @ 250μA | 28A Tc | 25nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||
| IRLR2905TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlu2905-datasheets-8163.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | YES | FET General Purpose Power | Single | 55V | 110W Tc | 42A | N-Channel | 1700pF @ 25V | 27m Ω @ 25A, 10V | 2V @ 250μA | 42A Tc | 48nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3303TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30V | 68W Tc | N-Channel | 870pF @ 25V | 31m Ω @ 21A, 10V | 1V @ 250μA | 35A Tc | 26nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3410TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 79W Tc | TO-252AA | 17A | 60A | 0.125Ohm | 150 mJ | N-Channel | 800pF @ 25V | 105m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||
| IRLR3103TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 107W Tc | TO-252AA | 20A | 220A | 0.019Ohm | 240 mJ | N-Channel | 1600pF @ 25V | 19m Ω @ 33A, 10V | 1V @ 250μA | 55A Tc | 50nC @ 4.5V | 4.5V 10V | ±16V |
