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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFBF20STRL | Vishay Siliconix | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 3 | 1 | Single | D2PAK | 490pF | 8 ns | 21ns | 32 ns | 56 ns | 1.7A | 20V | 900V | 3.1W Ta 54W Tc | 8Ohm | 900V | N-Channel | 490pF @ 25V | 8Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 38nC @ 10V | 8 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFL214TR | Vishay Siliconix | $0.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfl214trpbf-datasheets-2472.pdf | 250V | 790mA | TO-261-4, TO-261AA | Contains Lead | 4 | SOT-223 | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 790mA | 20V | 250V | 2W Ta 3.1W Tc | 2Ohm | N-Channel | 140pF @ 25V | 2Ohm @ 470mA, 10V | 4V @ 250μA | 790mA Tc | 8.2nC @ 10V | 2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFR010TR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr010pbf-datasheets-4965.pdf | 50V | 8.2A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | e0 | TIN LEAD | SINGLE | GULL WING | 235 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 8.2A | SILICON | SINGLE | 25W Tc | TO-252AA | 33A | 0.2Ohm | N-Channel | 250pF @ 25V | 200m Ω @ 4.6A, 10V | 4V @ 250μA | 8.2A Tc | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFI2807 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfi2807-datasheets-4433.pdf | TO-220-3 Full Pack | 75V | 48W Tc | N-Channel | 3400pF @ 25V | 13m Ω @ 43A, 10V | 4V @ 250μA | 40A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI610G | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-220-3 Full Pack, Isolated Tab | 2.6A | 200V | N-Channel | 2.6A Ta | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI710G | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-220-3 Full Pack, Isolated Tab | 1.6A | 400V | N-Channel | 4V @ 250μA | 1.6A Ta | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR010TRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr010pbf-datasheets-4965.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8.2A | 50V | 25W Tc | N-Channel | 250pF @ 25V | 200m Ω @ 4.6A, 10V | 4V @ 250μA | 8.2A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI9610G | Vishay Siliconix | $0.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi9610gpbf-datasheets-4232.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 6.000006g | 3 | No | 1 | Single | TO-220-3 | 180pF | 12 ns | 17ns | 15 ns | 19 ns | 2A | 20V | 200V | 27W Tc | 3Ohm | P-Channel | 180pF @ 25V | 3Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 13nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPI80N04S204AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n04s204atma1-datasheets-3954.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10mm | 9.25mm | 4.4mm | 3 | 3 | EAR99 | AVALANCHE RATED | Halogen Free | NO | Single | 300W | 1 | 26 ns | 45ns | 32 ns | 56 ns | 80A | 20V | 40V | SILICON | 300W Tc | 810 mJ | 40V | N-Channel | 5300pF @ 25V | 3.7m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFBC40STRL | Vishay Siliconix | $0.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc40spbf-datasheets-1879.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 1.2Ohm | 3 | 1 | Single | D2PAK | 1.3nF | 13 ns | 18ns | 20 ns | 55 ns | 6.2A | 20V | 600V | 3.1W Ta 130W Tc | 1.2Ohm | 600V | N-Channel | 1300pF @ 25V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 60nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFI9530N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-220-3 Full Pack | TO-220AB Full-Pak | 100V | P-Channel | 860pF @ 25V | 300mOhm @ 4.6A, 10V | 4V @ 250μA | 7.7A Ta | 38nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30S | Vishay Siliconix | $1.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbf30strlpbf-datasheets-7017.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 1.437803g | 3 | 1 | Single | D2PAK | 1.2nF | 14 ns | 25ns | 30 ns | 90 ns | 3.6A | 20V | 900V | 125W Tc | 3.7Ohm | N-Channel | 1200pF @ 25V | 3.7Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 78nC @ 10V | 3.7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFBL3315 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | Super D2-Pak | 150V | N-Channel | 21A Ta | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N03S4L03AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-ipi80n03s4l03aksa1-datasheets-4414.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.36mm | 9.45mm | 4.52mm | 3 | 14 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE | 8541.29.00.95 | e3 | Tin (Sn) | Halogen Free | NO | NOT SPECIFIED | Single | NOT SPECIFIED | 136W | 1 | 14 ns | 9ns | 13 ns | 62 ns | 80A | 16V | 30V | SILICON | 136W Tc | 0.0027Ohm | 260 mJ | 30V | N-Channel | 9750pF @ 25V | 2.7m Ω @ 80A, 10V | 2.2V @ 90μA | 80A Tc | 140nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| IRFBF30STRL | Vishay Siliconix | $1.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbf30strlpbf-datasheets-7017.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 1.2nF | 3.6A | 900V | 125W Tc | N-Channel | 1200pF @ 25V | 3.7Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 78nC @ 10V | 3.7 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB147N03LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp147n03lg-datasheets-2956.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | SINGLE | GULL WING | 4 | 31W | 1 | R-PSSO-G2 | 3.1 ns | 2.4ns | 2 ns | 12 ns | 20A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 31W Tc | 20 mJ | N-Channel | 1000pF @ 15V | 14.7m Ω @ 20A, 10V | 2.2V @ 250μA | 20A Tc | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFBF30STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbf30strlpbf-datasheets-7017.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | no | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 3.6A | SILICON | SINGLE | DRAIN | SWITCHING | 900V | 900V | 125W Tc | TO-220AB | N-Channel | 1200pF @ 25V | 3.7 Ω @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 78nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbe30strl-datasheets-4387.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | no | e0 | TIN LEAD | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 4.1A | SILICON | SINGLE | DRAIN | 800V | 800V | 125W Tc | TO-220AB | 3Ohm | N-Channel | 1300pF @ 25V | 3 Ω @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbf30pbf-datasheets-9527.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 125W | 3.6A | 900V | N-Channel | 1200pF @ 25V | 3.7 Ω @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 78nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE20L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-irfbe20pbf-datasheets-1770.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 54W | I2PAK | 530pF | 1.8A | 800V | N-Channel | 530pF @ 25V | 6.5Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 38nC @ 10V | 6.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC40STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc40spbf-datasheets-1879.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | AVALANCHE RATED | unknown | 8541.29.00.95 | SINGLE | GULL WING | 225 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 6.2A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 3.1W Ta 130W Tc | 25A | 570 mJ | N-Channel | 1300pF @ 25V | 1.2 Ω @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSS7728NL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss7728n-datasheets-2376.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 56pF | 200mA | 60V | 360mW Ta | N-Channel | 56pF @ 25V | 5Ohm @ 500mA, 10V | 2.3V @ 26μA | 200mA Ta | 1.5nC @ 10V | 5 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC40LCSTRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6.2A | 600V | 125W Tc | N-Channel | 1100pF @ 25V | 1.2 Ω @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 39nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC40LCSTRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6.2A | 600V | 125W Tc | N-Channel | 1100pF @ 25V | 1.2 Ω @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 39nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N03S4L04AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n03s4l03atma1-datasheets-4406.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | ULTRA LOW RESISTANCE | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 94W Tc | 80A | 320A | 0.0037Ohm | 95 mJ | N-Channel | 5100pF @ 25V | 3.7m Ω @ 80A, 10V | 2.2V @ 45μA | 80A Tc | 75nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30L | Vishay Siliconix | $1.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbe30lpbf-datasheets-7866.pdf | 800V | 4.1A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Contains Lead | 2.387001g | 1 | Single | I2PAK | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 125W Tc | 3Ohm | 800V | N-Channel | 1300pF @ 25V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFBE20S | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 54W | D2PAK | 530pF | 1.8A | 800V | N-Channel | 530pF @ 25V | 6.5Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 38nC @ 10V | 6.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP05CN10L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp05cn10lg-datasheets-4365.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 300W Tc | TO-220AB | 100A | 400A | 0.0051Ohm | 826 mJ | N-Channel | 15600pF @ 50V | 5.1m Ω @ 100A, 10V | 2.4V @ 250μA | 100A Tc | 163nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BSS138W L6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss138we6327-datasheets-2396.pdf | SC-70, SOT-323 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 500mW Ta | 0.28A | 4.2 pF | N-Channel | 43pF @ 25V | 3.5 Ω @ 220mA, 10V | 1.4V @ 26μA | 280mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPI90R800C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipi90r800c3xksa1-datasheets-4374.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 6 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 70 ns | 20ns | 32 ns | 400 ns | 6.9A | 20V | 900V | SILICON | SINGLE WITH BUILT-IN DIODE | 104W Tc | 15A | 0.8Ohm | 157 mJ | N-Channel | 1100pF @ 100V | 800m Ω @ 4.1A, 10V | 3.5V @ 460μA | 6.9A Tc | 42nC @ 10V | 10V | ±20V |
