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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TK8P60W,RVQ | Toshiba Semiconductor and Storage | $1.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | Single | DPAK | 570pF | 20ns | 5.5 ns | 70 ns | 8A | 30V | 600V | 80W Tc | 420mOhm | 600V | N-Channel | 570pF @ 300V | 500mOhm @ 4A, 10V | 3.7V @ 400μA | 8A Ta | 18.5nC @ 10V | Super Junction | 500 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI70N10S312AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb70n10s312atma1-datasheets-4492.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 17 ns | 8ns | 25 ns | 70A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | 125W Tc | 280A | 0.0116Ohm | 410 mJ | N-Channel | 4355pF @ 25V | 11.6m Ω @ 70A, 10V | 4V @ 83μA | 70A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQU2N80TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqu2n80tu-datasheets-4785.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 800V | 2.5W Ta 50W Tc | N-Channel | 550pF @ 25V | 6.3Ohm @ 900mA, 10V | 5V @ 250μA | 1.8A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF76419D3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-huf76419d3st-datasheets-4737.pdf | 60V | 20A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | Single | 75W | 35ns | 50 ns | 50 ns | 20A | 16V | 75W Tc | 60V | N-Channel | 900pF @ 25V | 37m Ω @ 20A, 10V | 3V @ 250μA | 20A Tc | 27.5nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB8N25TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqb8n25tm-datasheets-4738.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 250V | 3.13W Ta 87W Tc | N-Channel | 530pF @ 25V | 550mOhm @ 4A, 10V | 5V @ 250μA | 8A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLW630ATM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 1999 | https://pdf.utmel.com/r/datasheets/onsemiconductor-irlw630atm-datasheets-4739.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK (TO-262) | 200V | 3.1W Ta 69W Tc | N-Channel | 755pF @ 25V | 400mOhm @ 4.5A, 5V | 2V @ 250μA | 9A Tc | 27nC @ 5V | 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD24N08TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqd24n08tm-datasheets-4742.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 80V | 2.5W Ta 50W Tc | N-Channel | 750pF @ 25V | 60mOhm @ 9.8A, 10V | 4V @ 250μA | 19.6A Tc | 25nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6B85NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6b85nlt1g-datasheets-4665.pdf | 8-PowerTDFN, 5 Leads | 31 Weeks | ACTIVE (Last Updated: 6 days ago) | yes | not_compliant | e3 | Tin (Sn) | 100V | 3.5W Ta 42W Tc | N-Channel | 480pF @ 25V | 46m Ω @ 10A, 10V | 2.4V @ 250μA | 5.6A Ta 19A Tc | 7.9nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF16N15 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/onsemiconductor-fqpf16n15-datasheets-4745.pdf&product=onsemiconductor-fqpf16n15-6860363 | 150V | 16.4A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 2.27g | 3 | LAST SHIPMENTS (Last Updated: 23 hours ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 53W | 1 | FET General Purpose Power | Not Qualified | 11 ns | 115ns | 80 ns | 50 ns | 11.6A | 25V | SILICON | ISOLATED | SWITCHING | 53W Tc | 46.4A | 150V | N-Channel | 910pF @ 25V | 160m Ω @ 5.8A, 10V | 4V @ 250μA | 11.6A Tc | 30nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| FQD24N08TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqd24n08tm-datasheets-4742.pdf | 80V | 19.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | Single | 2.5W | 1 | 105ns | 35 ns | 30 ns | 19.6A | 25V | 2.5W Ta 50W Tc | 80V | N-Channel | 750pF @ 25V | 60m Ω @ 9.8A, 10V | 4V @ 250μA | 19.6A Tc | 25nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK762R6-60E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk762r660e118-datasheets-4740.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Brass | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | No | e3 | YES | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 32 ns | 50ns | 58 ns | 87 ns | 120A | 20V | 60V | DRAIN | SWITCHING | 22 AWG | 20 AWG | 324W Tc | 958A | 0.0026Ohm | N-Channel | 10170pF @ 25V | 2.6m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FQB30N06TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqb30n06tm-datasheets-4753.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 60V | 3.75W Ta 79W Tc | N-Channel | 945pF @ 25V | 40mOhm @ 15A, 10V | 4V @ 250μA | 30A Tc | 25nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N06S407AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipb80n06s407atma2-datasheets-1177.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 16 Weeks | 3 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 15 ns | 3ns | 5 ns | 23 ns | 80A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 79W Tc | 0.0071Ohm | 71 mJ | N-Channel | 4500pF @ 25V | 7.4m Ω @ 80A, 10V | 4V @ 40μA | 80A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NVATS5A302PLZT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvats5a302plzt4g-datasheets-4721.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 5 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | NOT SPECIFIED | NOT SPECIFIED | 60V | 84W Tc | P-Channel | 5400pF @ 20V | 13m Ω @ 35A, 10V | 2.6V @ 1mA | 80A Ta | 115nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB90N06S404ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipb90n06s404atma2-datasheets-4761.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | 2 | 16 Weeks | 1.946308g | 3 | yes | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 150W | 1 | R-PSSO-G2 | 30 ns | 70ns | 5 ns | 40 ns | 90A | 20V | 60V | SILICON | DRAIN | 150W Tc | 60V | N-Channel | 10400pF @ 25V | 4m Ω @ 90A, 10V | 4V @ 90μA | 90A Tc | 128nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFR9220TRRPBF | Vishay Siliconix | $2.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | D-Pak | 340pF | 8.8 ns | 27ns | 19 ns | 7.3 ns | 3.6A | 20V | 200V | 2.5W Ta 42W Tc | 1.5Ohm | P-Channel | 340pF @ 25V | 1.5Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 20nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AOW284 | Alpha & Omega Semiconductor Inc. | $8.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | TO-262 | 5.154nF | 105A | 80V | 1.9W Ta 250W Tc | N-Channel | 5154pF @ 40V | 4.3mOhm @ 20A, 10V | 3.3V @ 250μA | 15A Ta 105A Tc | 100nC @ 10V | 4.3 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF3N80CYDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | /files/onsemiconductor-fqpf3n80c-datasheets-4313.pdf | 800V | 3A | TO-220-3 Full Pack, Formed Leads | Lead Free | 2.565g | 3 | Single | 39W | 1 | 43.5ns | 32 ns | 22.5 ns | 3A | 30V | 39W Tc | 800V | N-Channel | 705pF @ 25V | 4.8 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 16.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP16N25C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/onsemiconductor-fqp16n25c-datasheets-4735.pdf | 250V | 16A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 1.8g | 3 | Single | 139W | 1 | TO-220-3 | 1.08nF | 15 ns | 130ns | 105 ns | 135 ns | 15.6A | 30V | 250V | 139W Tc | 270mOhm | 250V | N-Channel | 1080pF @ 25V | 270mOhm @ 7.8A, 10V | 4V @ 250μA | 15.6A Tc | 53.5nC @ 10V | 270 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IPC60R385CPX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOV11S60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 4-PowerTSFN | 4-DFN-EP (8x8) | 545pF | 8A | 600V | 8.3W Ta 156W Tc | N-Channel | 545pF @ 100V | 500mOhm @ 3.8A, 10V | 4.1V @ 250μA | 650mA Ta 8A Tc | 11nC @ 10V | 500 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT284L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/alphaomegasemiconductor-aot284l-datasheets-8394.pdf | TO-220-3 | 18 Weeks | 105A | 80V | 2.1W Ta 250W Tc | N-Channel | 5154pF @ 40V | 4.5m Ω @ 20A, 10V | 3.3V @ 250μA | 16A Ta 105A Tc | 100nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK6A45DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $5.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 35W | TO-220SIS | 490pF | 18ns | 8 ns | 5.5A | 30V | 450V | N-Channel | 490pF @ 25V | 1.35Ohm @ 2.8A, 10V | 4.4V @ 1mA | 5.5A Ta | 11nC @ 10V | 1.35 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM4N80CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm4n80cic0g-datasheets-4689.pdf | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | 800V | 38.7W Tc | N-Channel | 955pF @ 25V | 3 Ω @ 1.2A, 10V | 4V @ 250μA | 4A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK5A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | TO-220-3 Full Pack | 16 Weeks | 3 | No | Single | 35W | TO-220SIS | 490pF | 18ns | 8 ns | 5A | 30V | 500V | 35W Tc | 1.5Ohm | 500V | N-Channel | 490pF @ 25V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 5A Ta | 11nC @ 10V | 1.5 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | Lead Free | 16 Weeks | 3 | No | Single | 45W | TO-220SIS | 1.35nF | 55ns | 100 ns | 15 ns | 10A | 30V | 600V | 45W Tc | 750mOhm | 600V | N-Channel | 1350pF @ 25V | 750mOhm @ 5A, 10V | 4V @ 1mA | 10A Ta | 25nC @ 10V | 750 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R660CFDAATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r660cfdaatma1-datasheets-4695.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 18 Weeks | 3 | no | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 62.5W | 1 | R-PSSO-G2 | 9 ns | 8ns | 10 ns | 40 ns | 6A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 62.5W Tc | TO-252AA | 6A | 0.66Ohm | N-Channel | 543pF @ 100V | 660m Ω @ 3.2A, 10V | 4.5V @ 200μA | 6A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AOTF9N90 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aotf9n90-datasheets-8389.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | 3 | SINGLE | 1 | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 900V | 900V | 50W Tc | TO-220AB | 9A | N-Channel | 2560pF @ 25V | 1.3 Ω @ 4.5A, 10V | 4.5V @ 250μA | 9A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6590 | Alpha & Omega Semiconductor Inc. | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 5 | 18 Weeks | DUAL | 1 | R-PDSO-F5 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 7.3W Ta 208W Tc | 400A | 0.0015Ohm | 634 mJ | N-Channel | 8320pF @ 20V | 0.99m Ω @ 20A, 10V | 2.3V @ 250μA | 67A Ta 100A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC010N08LC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdmc010n08lc-datasheets-4617.pdf | 8-PowerWDFN | 20 Weeks | ACTIVE (Last Updated: 3 weeks ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 2.3W Ta 52W Tc | N-Channel | 2135pF @ 40V | 10.9m Ω @ 16A, 10V | 3V @ 90μA | 11A Ta 50A Tc | 31nC @ 10V | 4.5V 10V | ±20V |
