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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4348DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4348dyt1e3-datasheets-4429.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 21 Weeks | 186.993455mg | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | Not Qualified | 10 ns | 11ns | 11 ns | 55 ns | 8A | 12V | SILICON | DRAIN | SWITCHING | 1.31W Ta | 8A | 30V | N-Channel | 12.5m Ω @ 11A, 10V | 2V @ 250μA | 8A Ta | 23nC @ 4.5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||
| SI7328DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7328dnt1e3-datasheets-4290.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | Lead Free | 5 | 14 Weeks | Unknown | 6.6mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | S-XDSO-C5 | 10 ns | 10ns | 8 ns | 35 ns | 35A | 12V | SILICON | DRAIN | SWITCHING | 1.5V | 3.78W Ta 52W Tc | 60A | 30V | N-Channel | 2610pF @ 15V | 6.6m Ω @ 18.9A, 10V | 1.5V @ 250μA | 35A Tc | 31.5nC @ 4.5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||
| IRF610STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf610spbf-datasheets-3266.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 11 Weeks | 1.437803g | 3 | No | 1 | Single | D2PAK | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 3.3A | 20V | 200V | 3W Ta 36W Tc | 1.5Ohm | N-Channel | 140pF @ 25V | 1.5Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C410NLAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c410nlaft3g-datasheets-3897.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 2 hours ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.8W Ta 167W Tc | N-Channel | 8862pF @ 25V | 0.82m Ω @ 50A, 10V | 2V @ 250μA | 50A Ta 330A Tc | 143nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR2407TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfr2407trl-datasheets-4382.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 90ns | 66 ns | 65 ns | 42A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 110W Tc | TO-252AA | 170A | 0.026Ohm | 75V | N-Channel | 2400pF @ 25V | 26m Ω @ 25A, 10V | 4V @ 250μA | 42A Tc | 110nC @ 10V | ||||||||||||||||||||||||||||||||||||||
| IPA083N10NM5SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™5 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa083n10nm5sxksa1-datasheets-4308.pdf | TO-220-3 Full Pack | 13 Weeks | 100V | 36W Tc | N-Channel | 2700pF @ 50V | 8.3m Ω @ 25A, 10V | 3.8V @ 49μA | 50A Tc | 40nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHFS9N60A-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs9n60apbf-datasheets-3643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | yes | unknown | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 170W Tc | 9.2A | 37A | 0.75Ohm | 290 mJ | N-Channel | 1400pF @ 25V | 750m Ω @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| SI4626ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4626adyt1ge3-datasheets-4309.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | 44 ns | 21ns | 18 ns | 45 ns | 21.5A | 20V | SILICON | SWITCHING | 30V | 30V | 3W Ta 6W Tc | 0.0033Ohm | N-Channel | 5370pF @ 15V | 3.3m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 125nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AON6444 | Alpha & Omega Semiconductor Inc. | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | 8-PowerSMD, Flat Leads | 8 | 83W | 1 | 81A | 20V | 60V | 2.3W Ta 83W Tc | N-Channel | 5800pF @ 30V | 6.5m Ω @ 20A, 10V | 2.5V @ 250μA | 14A Ta 81A Tc | 96nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM4N90CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm4n90czc0g-datasheets-9191.pdf | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | 900V | 38.7W Tc | N-Channel | 955pF @ 25V | 4 Ω @ 2A, 10V | 4V @ 250μA | 4A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH4210DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfh4210dtrpbf-datasheets-4320.pdf | 8-PowerTDFN | 6mm | 900μm | 5mm | Lead Free | No SVHC | 1.1MOhm | 5 | EAR99 | No | Single | 3.5W | 1 | FET General Purpose Power | 19 ns | 45ns | 16 ns | 24 ns | 44A | 20V | 25V | 1.6V | 3.5W Ta 125W Tc | N-Channel | 4812pF @ 13V | 1.1m Ω @ 50A, 10V | 2.1V @ 100μA | 44A Ta | 77nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4874BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4874bdyt1e3-datasheets-5760.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 186.993455mg | 7mOhm | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | Not Qualified | 16A | 20V | SILICON | 1.6W Ta | 30V | N-Channel | 3230pF @ 15V | 7m Ω @ 16A, 10V | 3V @ 250μA | 12A Ta | 25nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPB80N04S304ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n04s304atma1-datasheets-4329.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | ULTRA LOW RESISTANCE | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 136W Tc | 80A | 320A | 0.0042Ohm | 290 mJ | N-Channel | 5200pF @ 25V | 3.8m Ω @ 80A, 10V | 4V @ 90μA | 80A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| DMTH6004SPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth6004spsq13-datasheets-4341.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 60V | 2.1W Ta 167W Tc | N-Channel | 4556pF @ 30V | 3.1m Ω @ 50A, 10V | 4V @ 250μA | 25A Ta 100A Tc | 95.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB9409-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdb9409f085-datasheets-4267.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 23 Weeks | 1.31247g | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 80A | 40V | 94W Tj | N-Channel | 2980pF @ 25V | 3.5m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R380E6X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 13 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ009NE2LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 5 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsz009ne2ls5atma1-datasheets-4356.pdf | 8-PowerTDFN | 18 Weeks | 25V | 2.1W Ta 69W Tc | N-Channel | 5500pF @ 12V | 900m Ω @ 20A, 10V | 2V @ 250μA | 39A Ta 40A Tc | 124nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD35N10-26P-T4GE3 | Vishay Siliconix | $0.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud35n1026pe3-datasheets-3743.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 35A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 8.3W Ta 83W Tc | TO-252AA | 40A | 0.026Ohm | 55 mJ | N-Channel | 2000pF @ 12V | 26m Ω @ 12A, 10V | 4.4V @ 250μA | 35A Tc | 47nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AOTF10N50FD | Alpha & Omega Semiconductor Inc. | $0.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aotf10n50fd-datasheets-8273.pdf | TO-220-3 Full Pack | 18 Weeks | FET General Purpose Power | 10A | Single | 500V | 50W Tc | N-Channel | 1240pF @ 25V | 750m Ω @ 5A, 10V | 4.2V @ 250μA | 10A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7328DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7328dnt1e3-datasheets-4290.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | S-XDSO-C5 | 10 ns | 10ns | 8 ns | 35 ns | 18.9A | 12V | SILICON | DRAIN | SWITCHING | 3.78W Ta 52W Tc | 35A | 60A | 0.0066Ohm | 30V | N-Channel | 2610pF @ 15V | 6.6m Ω @ 18.9A, 10V | 1.5V @ 250μA | 35A Tc | 31.5nC @ 4.5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||
| SPD07N60C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spu07n60c3bkma1-datasheets-9660.pdf | 650V | 7.3A | TO-252 | Contains Lead | 10 Weeks | 3 | Halogen Free | 83W | 6 ns | 3.5ns | 7 ns | 60 ns | 7.3A | 20V | 600V | 600V | 540mOhm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP16AN08A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp16an08a0-datasheets-4300.pdf | 75V | 58A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 135W | 1 | FET General Purpose Power | 8 ns | 82ns | 30 ns | 28 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 135W Tc | TO-220AB | 9A | 75V | N-Channel | 1857pF @ 25V | 16m Ω @ 58A, 10V | 4V @ 250μA | 9A Ta 58A Tc | 42nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFI9610GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfi9610gpbf-datasheets-4232.pdf | -200V | -1.9A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 27W | 1 | TO-220-3 | 180pF | 12 ns | 17ns | 15 ns | 19 ns | -2A | 20V | 200V | -4V | 27W Tc | 3Ohm | -200V | P-Channel | 180pF @ 25V | -4 V | 3Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 13nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSZ011NE2LS5IATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 5 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsz011ne2ls5iatma1-datasheets-4237.pdf | 8-PowerTDFN | 13 Weeks | 25V | 2.1W Ta 69W Tc | N-Channel | 3400pF @ 12V | 1.1m Ω @ 20A, 10V | 2V @ 250μA | 35A Ta 40A Tc | 50nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N06S4L03ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd90n06s4l03atma2-datasheets-4239.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | 3.949996g | 3 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 1 | 1 | R-PSSO-G2 | 21 ns | 6ns | 20 ns | 140 ns | 90A | 16V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | N-Channel | 13000pF @ 25V | 3.5m Ω @ 90A, 10V | 2.2V @ 90μA | 90A Tc | 170nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IPD90N10S406ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd90n10s406atma1-datasheets-4245.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 14 Weeks | yes | EAR99 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 90A | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W Tc | 360A | 0.0067Ohm | 250 mJ | N-Channel | 4870pF @ 25V | 6.7m Ω @ 90A, 10V | 3.5V @ 90μA | 90A Tc | 68nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N04S4L04AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb80n04s4l04atma1-datasheets-9772.pdf | TO-220-3 | Contains Lead | 3 | 16 Weeks | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 7 ns | 12ns | 31 ns | 22 ns | 80A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 71W Tc | TO-220AB | 100 mJ | N-Channel | 4690pF @ 25V | 4.3m Ω @ 80A, 10V | 2.2V @ 35μA | 80A Tc | 60nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||
| FQB6N40CTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqb6n40ctm-datasheets-3631.pdf | 400V | 6A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 4 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | FAST SWITCHING | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 73W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 65ns | 38 ns | 21 ns | 6A | 30V | SILICON | DRAIN | SWITCHING | 73W Tc | 6A | 24A | 1Ohm | 270 mJ | 400V | N-Channel | 625pF @ 25V | 1 Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IPA040N06NM5SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™5 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa040n06nm5sxksa1-datasheets-4263.pdf | TO-220-3 Full Pack | 13 Weeks | 60V | 36W Tc | N-Channel | 3500pF @ 30V | 4m Ω @ 72A, 10V | 3.3V @ 50μA | 72A Tc | 50nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN5R0-80BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn5r080bs118-datasheets-4264.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | Tin | No | e3 | YES | GULL WING | 3 | Single | 270W | 1 | R-PSSO-G2 | 33 ns | 21ns | 14 ns | 73 ns | 100A | 20V | 80V | SILICON | DRAIN | SWITCHING | 270W Tc | 598A | 80V | N-Channel | 6793pF @ 40V | 5.1m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 101nC @ 10V | 10V | ±20V |
