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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TN0620N3-G-P014 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tn0620n3gp002-datasheets-7890.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | EAR99 | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 10 ns | 8ns | 20 ns | 20 ns | 250mA | 20V | SILICON | SWITCHING | 200V | 200V | 1W Tc | 0.25A | 6Ohm | 35 pF | N-Channel | 150pF @ 25V | 6 Ω @ 500mA, 10V | 1.6V @ 1mA | 250mA Tj | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N06S4L07AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipp80n06s4l07aksa2-datasheets-7616.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10mm | 9.25mm | 4.4mm | 3 | 16 Weeks | 3 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 79W | 1 | 10 ns | 50 ns | 80A | 16V | 60V | SILICON | DRAIN | 79W Tc | 0.0064Ohm | N-Channel | 5680pF @ 25V | 6.7m Ω @ 80A, 10V | 2.2V @ 40μA | 80A Tc | 72nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TPS1101DR | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.91mm | Lead Free | 8 | 6 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1.58mm | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | TPS1101 | 8 | 791mW | 1 | Other Transistors | 6.5 ns | 5.5ns | 5.5 ns | 19 ns | 2.3A | 2V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 791mW Ta | 0.62A | 15V | P-Channel | 90m Ω @ 2.5A, 10V | 1.5V @ 250μA | 2.3A Ta | 11.25nC @ 10V | 2.7V 10V | +2V, -15V | ||||||||||||||||||||||||||||||||||||||||||
| IPD100N06S403ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-ipd100n06s403atma2-datasheets-4495.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.5mm | 2 | 16 Weeks | 3.949996g | 3 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 150W | 1 | 175°C | R-PSSO-G2 | 30 ns | 40 ns | 100A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | 400A | 60V | N-Channel | 10400pF @ 25V | 3.5m Ω @ 100A, 10V | 4V @ 90μA | 100A Tc | 128nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP45N06S409AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi45n06s409aksa2-datasheets-1344.pdf | TO-220-3 | 3 | 14 Weeks | yes | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 71W Tc | TO-220AB | 45A | 180A | 0.0094Ohm | 97 mJ | N-Channel | 3785pF @ 25V | 9.4m Ω @ 45A, 10V | 4V @ 34μA | 45A Tc | 47nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7370ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7370adpt1ge3-datasheets-4514.pdf | PowerPAK® SO-8 | 5 | 13 Weeks | 10mOhm | unknown | DUAL | C BEND | 1 | R-PDSO-C5 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5.2W Ta 69.4W Tc | 125 mJ | 60V | N-Channel | 2850pF @ 30V | 10m Ω @ 12A, 10V | 4.5V @ 250μA | 50A Tc | 70nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT482L | Alpha & Omega Semiconductor Inc. | $0.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 16 Weeks | 105A | 80V | 2.1W Ta 333W Tc | N-Channel | 4870pF @ 40V | 7.2m Ω @ 20A, 10V | 3.7V @ 250μA | 11A Ta 105A Tc | 81nC @ 10V | 7V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC159N10LSFGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc159n10lsfgatma1-datasheets-4478.pdf | 8-PowerTDFN | 5 | 26 Weeks | no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 114W Tc | 9.4A | 252A | 0.0159Ohm | 155 mJ | N-Channel | 2500pF @ 50V | 15.9m Ω @ 50A, 10V | 2.4V @ 72μA | 9.4A Ta 63A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFU8403 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfr8403trl-datasheets-3883.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 16 Weeks | No SVHC | 3 | EAR99 | No | 1 | Single | 99W | FET General Purpose Power | 10 ns | 32ns | 23 ns | 31 ns | 100A | 20V | 40V | 99W Tc | N-Channel | 3171pF @ 25V | 3 V | 3.1m Ω @ 76A, 10V | 3.9V @ 100μA | 100A Tc | 99nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z14STRLPBF | Vishay Siliconix | $1.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9z14spbf-datasheets-3262.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 270pF | 11 ns | 63ns | 31 ns | 10 ns | 6.7A | 20V | 60V | 3.7W Ta 43W Tc | 500mOhm | -60V | P-Channel | 270pF @ 25V | 500mOhm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3199 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/sanken-2sk3199-datasheets-4543.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | yes | UL APPROVED | 8541.29.00.95 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 5A | SILICON | SINGLE | ISOLATED | 500V | 500V | 30W Tc | TO-220AB | 5A | 20A | 35 mJ | N-Channel | 650pF @ 10V | 1.5 Ω @ 2.5A, 10V | 4V @ 1mA | 5A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT264L | Alpha & Omega Semiconductor Inc. | $1.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | FET General Purpose Powers | 140A | Single | 60V | 2.1W Ta 333W Tc | N-Channel | 8400pF @ 30V | 3.2m Ω @ 20A, 10V | 3.2V @ 250μA | 19A Ta 140A Tc | 94nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP053N08B-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp053n08bf102-datasheets-4458.pdf | TO-220-3 | Lead Free | 3 | 9 Weeks | 1.8g | ACTIVE (Last Updated: 2 days ago) | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 146W | 1 | FET General Purpose Power | R-PSFM-T3 | 75A | 20V | SILICON | SWITCHING | 80V | 80V | 146W Tc | TO-220AB | 480A | 0.0053Ohm | 365 mJ | N-Channel | 5960pF @ 40V | 5.3m Ω @ 75A, 10V | 4.5V @ 250μA | 75A Tc | 85nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NVATS68301PZT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-nvats68301pzt4g-datasheets-4465.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 25 Weeks | ACTIVE (Last Updated: 14 hours ago) | yes | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 84W Tc | 31A | 124A | 0.075Ohm | 54 mJ | P-Channel | 2850pF @ 20V | 75m Ω @ 14A, 10V | 3.5V @ 1mA | 31A Ta | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IAUC120N04S6L009ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-6 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-iauc120n04s6l009atma1-datasheets-4406.pdf | 8-PowerTDFN | 16 Weeks | 40V | 150W Tc | N-Channel | 7806pF @ 25V | 960m Ω @ 60A, 10V | 2V @ 90μA | 150A Tc | 128nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP360N65S3R0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcp360n65s3r0-datasheets-4407.pdf | TO-220-3 | 12 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 83W Tc | N-Channel | 730pF @ 400V | 360m Ω @ 5A, 10V | 4.5V @ 1mA | 10A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK80S06K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | DPAK+ | 4.2nF | 13ns | 17 ns | 80A | 20V | 60V | 100W Tc | N-Channel | 4200pF @ 10V | 5.5mOhm @ 40A, 10V | 3V @ 1mA | 80A Ta | 85nC @ 10V | 5.5 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8870 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb8870-datasheets-4040.pdf | 30V | 160A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 10 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 160W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 98ns | 47 ns | 75 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 160W Tc | 0.0044Ohm | 30V | N-Channel | 5200pF @ 15V | 3.9m Ω @ 35A, 10V | 2.5V @ 250μA | 23A Ta 160A Tc | 132nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TK35E08N1,S1X | Toshiba Semiconductor and Storage | $5.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshiba-tk35e08n1s1x-datasheets-8328.pdf | TO-220-3 | 12 Weeks | 55A | 80V | 72W Tc | N-Channel | 1700pF @ 40V | 12.2m Ω @ 17.5A, 10V | 4V @ 300μA | 55A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP7N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp7n60ege3-datasheets-4865.pdf | TO-220-3 | 3 | 30 Weeks | 6.000006g | 3 | No | 1 | Single | 1 | FET General Purpose Powers | 13 ns | 13ns | 14 ns | 24 ns | 7A | 20V | SILICON | SWITCHING | 78W Tc | TO-220AB | 7A | 0.6Ohm | 600V | N-Channel | 680pF @ 100V | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4348DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4348dyt1e3-datasheets-4429.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 21 Weeks | 186.993455mg | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | Not Qualified | 10 ns | 11ns | 11 ns | 55 ns | 8A | 12V | SILICON | DRAIN | SWITCHING | 1.31W Ta | 8A | 30V | N-Channel | 12.5m Ω @ 11A, 10V | 2V @ 250μA | 8A Ta | 23nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| PSMN005-75P,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nexperiausainc-psmn00575p127-datasheets-4431.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | NO | 3 | Single | 230W | 1 | 37 ns | 73ns | 74 ns | 144 ns | 75A | 20V | 75V | SILICON | DRAIN | SWITCHING | 230W Tc | 400A | 0.005Ohm | 500 mJ | 75V | N-Channel | 8250pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 165nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R2-40PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn2r240ps127-datasheets-4434.pdf | TO-220-3 | 3 | 12 Weeks | 3 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | 3 | 1 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 306W Tc | TO-220AB | 100A | 962A | 0.0021Ohm | 1240 mJ | N-Channel | 8423pF @ 20V | 2.1m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB70N12S3L12ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi70n12s3l12aksa1-datasheets-8536.pdf | 2 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 70A | 280A | 0.0155Ohm | 410 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4866DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4866dyt1e3-datasheets-3926.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | 28 ns | 32ns | 35 ns | 82 ns | 11A | 8V | SILICON | SWITCHING | 12V | 1.6W Ta | 0.0055Ohm | N-Channel | 5.5m Ω @ 17A, 4.5V | 600mV @ 250μA (Min) | 11A Ta | 30nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IAUC120N04S6N010ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-6 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-iauc120n04s6n010atma1-datasheets-4448.pdf | 8-PowerTDFN | 16 Weeks | 40V | 150W Tc | N-Channel | 6878pF @ 25V | 1.03m Ω @ 60A, 10V | 3V @ 90μA | 150A Tc | 108nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL7540PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfb7540pbf-datasheets-6164.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 2.084002g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 12 ns | 76ns | 56 ns | 58 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 3.7V | 160W Tc | 60V | N-Channel | 4555pF @ 25V | 5.1m Ω @ 65A, 10V | 3.7V @ 100μA | 110A Tc | 130nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS004N08C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdms004n08c-datasheets-4449.pdf | 8-PowerTDFN | 20 Weeks | 106mg | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | 260 | Single | 30 | 80V | 125W Tc | N-Channel | 4250pF @ 40V | 4m Ω @ 44A, 10V | 4V @ 250μA | 126A Tc | 55nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG7N65SCTI | Diodes Incorporated | $0.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg7n65scti-datasheets-4394.pdf | TO-220-3 Full Pack, Isolated Tab | 6 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 28W Tc | N-Channel | 886pF @ 50V | 1.4 Ω @ 2.5A, 10V | 4V @ 250μA | 7.7A Tc | 25.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7104DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7104dnt1ge3-datasheets-7669.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 3.8W | 1 | FET General Purpose Powers | S-XDSO-C5 | 12 ns | 11ns | 10 ns | 36 ns | 26.1A | 12V | SILICON | DRAIN | SWITCHING | 3.8W Ta 52W Tc | 35A | 60A | 0.0037Ohm | 12V | N-Channel | 2800pF @ 6V | 3.7m Ω @ 26.1A, 4.5V | 1.8V @ 250μA | 35A Tc | 70nC @ 10V | 2.5V 4.5V | ±12V |
