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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BSZ011NE2LS5IATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 5 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsz011ne2ls5iatma1-datasheets-4237.pdf | 8-PowerTDFN | 13 Weeks | 25V | 2.1W Ta 69W Tc | N-Channel | 3400pF @ 12V | 1.1m Ω @ 20A, 10V | 2V @ 250μA | 35A Ta 40A Tc | 50nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N06S4L03ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd90n06s4l03atma2-datasheets-4239.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | 3.949996g | 3 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 1 | 1 | R-PSSO-G2 | 21 ns | 6ns | 20 ns | 140 ns | 90A | 16V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | N-Channel | 13000pF @ 25V | 3.5m Ω @ 90A, 10V | 2.2V @ 90μA | 90A Tc | 170nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N10S406ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd90n10s406atma1-datasheets-4245.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 14 Weeks | yes | EAR99 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 90A | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W Tc | 360A | 0.0067Ohm | 250 mJ | N-Channel | 4870pF @ 25V | 6.7m Ω @ 90A, 10V | 3.5V @ 90μA | 90A Tc | 68nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| R5005CNJTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | 3 | No | SINGLE | GULL WING | 1 | 1 | R-PSSO-G2 | 20 ns | 25ns | 20 ns | 40 ns | 5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 40W Tc | 5A | 20A | N-Channel | 320pF @ 25V | 1.6 Ω @ 2.5A, 10V | 4.5V @ 1mA | 5A Ta | 10.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR6215TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfr6215trl-datasheets-4160.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.52mm | 6.22mm | Lead Free | 2 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | 1 | Single | 30 | 110W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 14 ns | 36ns | 37 ns | 53 ns | -13A | 20V | SILICON | DRAIN | SWITCHING | 150V | 110W Tc | TO-252AA | 44A | 0.295Ohm | -150V | P-Channel | 860pF @ 25V | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| FCPF380N65FL1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcpf380n65fl1-datasheets-4171.pdf | TO-220-3 Full Pack | 15 Weeks | 2.27g | 380mOhm | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | FET General Purpose Power | 18 ns | 7.8ns | 8 ns | 45 ns | 10.2A | 30V | 650V | 33W Tc | N-Channel | 1680pF @ 100V | 380m Ω @ 5.1A, 10V | 5V @ 1mA | 10.2A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TN2540N3-G-P002 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn2540n8g-datasheets-9473.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 2 Weeks | 453.59237mg | 3 | EAR99 | BOTTOM | 1 | Single | 740mW | 1 | 20 ns | 15ns | 20 ns | 25 ns | 175mA | 20V | SILICON | SWITCHING | 1W Ta | 25 pF | 400V | N-Channel | 125pF @ 25V | 12 Ω @ 500mA, 10V | 2V @ 1mA | 175mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB029N06N3GE8187ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb029n06n3ge8187atma1-datasheets-4183.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.31mm | 4.57mm | 9.45mm | 2 | 13 Weeks | 1.946308g | yes | EAR99 | GULL WING | 1 | Single | 1 | R-PSSO-G2 | 35 ns | 62 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 188W Tc | 480A | 0.0032Ohm | 235 mJ | 60V | N-Channel | 13000pF @ 30V | 3.2m Ω @ 100A, 10V | 4V @ 118μA | 120A Tc | 165nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFZ44Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-auirfz44zstrl-datasheets-9445.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | Single | 80W | 1 | FET General Purpose Power | 14 ns | 68ns | 41 ns | 33 ns | 51A | 20V | SILICON | DRAIN | SWITCHING | 2V | 80W Tc | TO-220AB | 200A | 55V | N-Channel | 1420pF @ 25V | 13.9m Ω @ 31A, 10V | 4V @ 250μA | 51A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AUIRFR48ZTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfr48ztrl-datasheets-4194.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 91W Tc | TO-252AA | 42A | 250A | 0.011Ohm | 110 mJ | N-Channel | 1720pF @ 25V | 11m Ω @ 37A, 10V | 4V @ 50μA | 42A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NVD5C632NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvd5c632nlt4g-datasheets-4202.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 13 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 60V | 4W Ta 115W Tc | N-Channel | 5700pF @ 25V | 2.5m Ω @ 50A, 10V | 2.1V @ 250μA | 29A Ta 155A Tc | 78nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6292 | Alpha & Omega Semiconductor Inc. | $1.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aon6292-datasheets-8245.pdf | 8-PowerSMD, Flat Leads | 18 Weeks | FET General Purpose Powers | 85A | Single | 100V | 7.3W Ta 156W Tc | N-Channel | 3830pF @ 50V | 6m Ω @ 20A, 10V | 3.4V @ 250μA | 24A Ta 85A Tc | 63nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK25E06K3,S1X(S | Toshiba Semiconductor and Storage | $3.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 | 12 Weeks | 60W | TO-220-3 | 25A | 60V | 60W Tc | 14Ohm | 60V | N-Channel | 18mOhm @ 12.5A, 10V | 25A Ta | 29nC @ 10V | 18 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA126N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa126n10n3gxksa1-datasheets-4211.pdf | TO-220-3 Full Pack | 3 | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 33W Tc | TO-220AB | 35A | 140A | 0.0126Ohm | 90 mJ | N-Channel | 2500pF @ 50V | 12.6m Ω @ 35A, 10V | 3.5V @ 45μA | 35A Tc | 35nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRL3803VSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.65mm | Lead Free | 2 | 12 Weeks | 5.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 29 ns | 140A | 16V | SILICON | DRAIN | SWITCHING | 3.8W Ta 200W Tc | 75A | 470A | 400 mJ | 30V | N-Channel | 3720pF @ 25V | 5.5m Ω @ 71A, 10V | 1V @ 250μA | 140A Tc | 76nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| AOT5N100 | Alpha & Omega Semiconductor Inc. | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aot5n100-datasheets-8226.pdf | TO-220-3 | 18 Weeks | 4A | 1000V | 195W Tc | N-Channel | 1150pF @ 25V | 4.2 Ω @ 2.5A, 10V | 4.5V @ 250μA | 4A Tc | 23nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK12P60W,RVQ | Toshiba Semiconductor and Storage | $0.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Single | DPAK | 890pF | 23ns | 5.5 ns | 85 ns | 11.5A | 30V | 600V | 100W Tc | 340mOhm | N-Channel | 890pF @ 300V | 340mOhm @ 5.8A, 10V | 3.7V @ 600μA | 11.5A Ta | 25nC @ 10V | Super Junction | 340 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK663R7-75C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/nexperiausainc-buk663r775c118-datasheets-4152.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 26 Weeks | 3 | Tin | No | e3 | YES | GULL WING | 3 | Single | 306W | 1 | R-PSSO-G2 | 52 ns | 81ns | 156 ns | 412 ns | 120A | 16V | 75V | SILICON | DRAIN | SWITCHING | 306W Tc | 0.0058Ohm | 75V | N-Channel | 15450pF @ 25V | 4m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 234nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTMJS1D2N04CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmjs1d2n04cltwg-datasheets-4157.pdf | 8-PowerSMD, Gull Wing | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.8W Ta 128W Tc | N-Channel | 5600pF @ 25V | 1.2m Ω @ 50A, 10V | 2V @ 170μA | 41A Ta 237A Tc | 93nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N06S405AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipi80n06s405aksa2-datasheets-4081.pdf | TO-262-3 | 3 | 16 Weeks | 2.387001g | 3 | yes | not_compliant | e3 | Tin (Sn) | 107W | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 6.5nF | 20 ns | 5ns | 8 ns | 35 ns | 80A | 20V | 60V | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 0.0057Ohm | 5.7 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y1R4-40HX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4124DY-T1-E3 | Vishay Siliconix | $0.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4124dyt1ge3-datasheets-3524.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | 30 ns | 14ns | 11 ns | 38 ns | 13.6A | 20V | SILICON | SWITCHING | 40V | 40V | 2.5W Ta 5.7W Tc | 20.5A | 0.0075Ohm | N-Channel | 3540pF @ 20V | 7.5m Ω @ 14A, 10V | 3V @ 250μA | 20.5A Tc | 77nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| TN2501N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn2501n8g-datasheets-4090.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | 3 | 6 Weeks | 52.786812mg | 4 | EAR99 | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | e3 | Matte Tin (Sn) | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | Not Qualified | R-PSSO-F3 | 5 ns | 15ns | 15 ns | 15 ns | 400mA | 15V | SILICON | DRAIN | SWITCHING | 1.6W Tc | 0.56A | 18V | N-Channel | 110pF @ 15V | 2.5 Ω @ 200mA, 3V | 1V @ 1mA | 400mA Tj | 1.2V 3V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BUK762R0-40E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk762r040e118-datasheets-4096.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 29 ns | 36ns | 46 ns | 79 ns | 120A | 20V | 40V | SILICON | DRAIN | SWITCHING | 293W Tc | 0.002Ohm | 40V | N-Channel | 8500pF @ 25V | 2m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 109.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHU7N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihu7n60ege3-datasheets-3032.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 329.988449mg | 3 | No | 1 | Single | TO-251 | 680pF | 13 ns | 13ns | 14 ns | 24 ns | 7A | 20V | 600V | 78W Tc | 600mOhm | 600V | N-Channel | 680pF @ 100V | 600mOhm @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 600 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF380N60E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-fcp380n60e-datasheets-8054.pdf | TO-220-3 Full Pack | 10.36mm | 9.19mm | 4.9mm | Lead Free | 12 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 106W | 1 | FET General Purpose Power | 17 ns | 9ns | 10 ns | 64 ns | 10.2A | 20V | 31W Tc | 600V | N-Channel | 1770pF @ 25V | 380m Ω @ 5A, 10V | 3.5V @ 250μA | 10.2A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK5Q65W,S1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-251-3 Stub Leads, IPak | 16 Weeks | 5.2A | 650V | 60W Tc | N-Channel | 380pF @ 300V | 1.22 Ω @ 2.6A, 10V | 3.5V @ 170μA | 5.2A Ta | 10.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH10H4M5LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth10h4m5lps13-datasheets-4129.pdf | 8-PowerTDFN | 23 Weeks | not_compliant | e3 | Matte Tin (Sn) | 100V | 2.7W Ta 136W Tc | N-Channel | 4843pF @ 50V | 4.3m Ω @ 30A, 10V | 2.5V @ 250μA | 20A Ta 100A Tc | 80nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM3N80CI C0G | Taiwan Semiconductor Corporation | $1.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm3n80chc5g-datasheets-7694.pdf | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 800V | 94W Tc | N-Channel | 696pF @ 25V | 4.2 Ω @ 1.5A, 10V | 4V @ 250μA | 3A Tc | 19nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF8N90C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp8n90c-datasheets-9050.pdf | 900V | 6.3A | TO-220-3 Full Pack | Lead Free | 3 | 5 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 60W | 1 | FET General Purpose Power | 40 ns | 110ns | 70 ns | 70 ns | 6.3A | 30V | SILICON | ISOLATED | SWITCHING | 60W Tc | TO-220AB | 25A | 850 mJ | 900V | N-Channel | 2080pF @ 25V | 1.9 Ω @ 3.15A, 10V | 5V @ 250μA | 6.3A Tc | 45nC @ 10V | 10V | ±30V |
