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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF6785MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf6785mtrpbf-datasheets-8334.pdf | DirectFET™ Isometric MZ | 6.35mm | 506μm | 5.05mm | 3 | 12 Weeks | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 57W | 1 | FET General Purpose Power | R-XBCC-N3 | 6.2 ns | 8.6ns | 14 ns | 7.2 ns | 3.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 2.8W Ta 57W Tc | 19A | 27A | 0.1Ohm | 33 mJ | 200V | N-Channel | 1500pF @ 25V | 100m Ω @ 4.2A, 10V | 5V @ 100μA | 3.4A Ta 19A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPA052N08NM5SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™5 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa052n08nm5sxksa1-datasheets-8435.pdf | TO-220-3 Full Pack | 13 Weeks | 80V | 38W Tc | N-Channel | 3800pF @ 40V | 5.2m Ω @ 32A, 10V | 3.8V @ 65μA | 64A Tc | 56nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFZ24NSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfz24ns-datasheets-3018.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | R-PDSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 45W Tc | TO-263AB | 17A | 68A | 0.07Ohm | 71 mJ | N-Channel | 370pF @ 25V | 70m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPB049N08N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb049n08n5atma1-datasheets-8440.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3.949996g | yes | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 17 ns | 7ns | 7 ns | 27 ns | 80A | 20V | 80V | SILICON | DRAIN | SWITCHING | 125W Tc | 320A | 0.0049Ohm | 84 mJ | N-Channel | 3770pF @ 40V | 4.9m Ω @ 80A, 10V | 3.8V @ 66μA | 80A Tc | 53nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPB80N06S209ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb80n06s209atma2-datasheets-8017.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | yes | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 190W Tc | 80A | 320A | 0.0088Ohm | 370 mJ | N-Channel | 2360pF @ 25V | 8.8m Ω @ 50A, 10V | 4V @ 125μA | 80A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDP070AN06A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp070an06a0-datasheets-8476.pdf | 60V | 80A | TO-220-3 | Lead Free | 3 | 9 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 175W | 1 | FET General Purpose Power | 12 ns | 159ns | 35 ns | 27 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 175W Tc | TO-220AB | 0.007Ohm | 60V | N-Channel | 3000pF @ 25V | 7m Ω @ 80A, 10V | 4V @ 250μA | 15A Ta 80A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTU55N075T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | TO-251-3 Short Leads, IPak, TO-251AA | 55A | 75V | N-Channel | 4V @ 25μA | 55A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP030N06B-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp030n06bf102-datasheets-8484.pdf | TO-220-3 | 9 Weeks | yes | NO | FET General Purpose Power | Single | 60V | 205W Tc | 120A | N-Channel | 8030pF @ 30V | 3.1m Ω @ 100A, 10V | 4V @ 250μA | 120A Tc | 99nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C612NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntmfs5c612nlt3g-datasheets-8491.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 260 | 30 | 1 | R-PDSO-F5 | 235A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 3.8W Ta 167W Tc | 900A | 0.0015Ohm | 451 mJ | N-Channel | 6660pF @ 25V | 1.5m Ω @ 50A, 10V | 2V @ 250μA | 36A Ta 235A Tc | 91nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTU50N085T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | TO-251-3 Short Leads, IPak, TO-251AA | 50A | 85V | N-Channel | 4V @ 25μA | 50A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC050N10NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc050n10ns5atma1-datasheets-8495.pdf | 8-PowerTDFN | 26 Weeks | 100V | 3W Ta 136W Tc | N-Channel | 4300pF @ 50V | 5m Ω @ 50A, 10V | 3.8V @ 72μA | 16A Ta 100A Tc | 61nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY02N50D-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/ixys-ixty02n50dtrl-datasheets-8387.pdf | 24 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5113PLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | /files/onsemiconductor-nvmfs5113plt1g-datasheets-8096.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 17 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | YES | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 3.8W Ta 150W Tc | 415A | 0.014Ohm | 315 mJ | P-Channel | 4400pF @ 25V | 14m Ω @ 17A, 10V | 2.5V @ 250μA | 10A Ta 64A Tc | 83nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FQPF6N80T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf6n80t-datasheets-8398.pdf | 800V | 3.3A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 7 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | UL RECOGNIZED | No | e3 | Tin (Sn) | Single | 51W | 1 | FET General Purpose Power | 30 ns | 70ns | 45 ns | 65 ns | 3.3A | 30V | SILICON | ISOLATED | SWITCHING | 51W Tc | TO-220AB | 680 mJ | 800V | N-Channel | 1500pF @ 25V | 1.95 Ω @ 1.65A, 10V | 5V @ 250μA | 3.3A Tc | 31nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| PSMN3R9-100YSFX | Nexperia USA Inc. | $2.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn3r9100ysfx-datasheets-8402.pdf | SOT-1023, 4-LFPAK | 16 Weeks | 4 | 100V | 245W Ta | N-Channel | 7360pF @ 50V | 4.3m Ω @ 25A, 10V | 4V @ 1mA | 120A Ta | 111nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8443 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb8443-datasheets-8374.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 188W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 18.4 ns | 17.9ns | 13.5 ns | 55 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 188W Tc | 80A | 40V | N-Channel | 9310pF @ 25V | 3m Ω @ 80A, 10V | 4V @ 250μA | 25A Ta 120A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NTMFS6B14NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs6b14nt3g-datasheets-8311.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | 1 | 50A | 100V | 3.1W Ta 77W Tc | N-Channel | 1300pF @ 50V | 15m Ω @ 20A, 10V | 4V @ 250μA | 10A Ta 50A Tc | 20nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EKV550 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/sanken-ekv550-datasheets-8313.pdf | TO-220-3 | 3 | 12 Weeks | yes | EAR99 | 8541.29.00.95 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 50A | SILICON | SINGLE | SWITCHING | 50V | 50V | 85W Tc | TO-220AB | 0.015Ohm | 150 mJ | N-Channel | 2000pF @ 10V | 15m Ω @ 25A, 10V | 4.2V @ 250μA | 50A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AOB7S65L | Alpha & Omega Semiconductor Inc. | $0.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aob7s65l-datasheets-8245.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | FET General Purpose Power | 7A | Single | 650V | 104W Tc | 7A | N-Channel | 434pF @ 100V | 650m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 9.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB065N10N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb065n10n3gatma1-datasheets-8321.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3 | yes | EAR99 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 19 ns | 9 ns | 37 ns | 80A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150W Tc | 0.0065Ohm | 160 mJ | N-Channel | 4910pF @ 50V | 6.5m Ω @ 80A, 10V | 3.5V @ 90μA | 80A Tc | 64nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AUIRFN8405TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/infineontechnologies-auirfn8405tr-datasheets-8326.pdf | 8-PowerTDFN | No SVHC | 8 | PQFN (5x6) | 5.142nF | 95A | 40V | 3.9V | 3.3W Ta 136W Tc | 1.6mOhm | N-Channel | 5142pF @ 25V | 2mOhm @ 50A, 10V | 3.9V @ 100μA | 95A Tc | 117nC @ 10V | 2 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY90N055T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 55V | 150W Tc | N-Channel | 2770pF @ 25V | 8.4m Ω @ 25A, 10V | 4V @ 250μA | 90A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK762R4-60E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk762r460e118-datasheets-8278.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 3 | 357W | 1 | R-PSSO-G2 | 36 ns | 50ns | 71 ns | 130 ns | 120A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 357W Tc | 0.0024Ohm | 660 mJ | 60V | N-Channel | 11180pF @ 25V | 2.4m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 158nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| PSMN2R2-40BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn2r240bs118-datasheets-8290.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 306W | 1 | R-PSSO-G2 | 33.2 ns | 40.4ns | 25.2 ns | 66.6 ns | 100A | 20V | 40V | SILICON | DRAIN | SWITCHING | 306W Tc | 962A | 0.0022Ohm | 1.24 mJ | 40V | N-Channel | 8423pF @ 20V | 2.2m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTY2N100P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1000V | 86W Tc | N-Channel | 655pF @ 25V | 7.5 Ω @ 1A, 10V | 4.5V @ 100μA | 2A Tc | 24.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3007STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | 62A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 120W Tc | 320A | 0.0126Ohm | 946 mJ | N-Channel | 3270pF @ 25V | 12.6m Ω @ 48A, 10V | 4V @ 250μA | 62A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD65R420CFDAATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd65r420cfdaatma1-datasheets-8284.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 8.7A | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 83.3W Tc | 27A | 0.42Ohm | 227 mJ | N-Channel | 870pF @ 100V | 420m Ω @ 3.4A, 10V | 4.5V @ 345μA | 8.7A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BUK761R6-40E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk761r640e118-datasheets-8295.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 357W | 1 | R-PSSO-G2 | 42 ns | 60ns | 83 ns | 121 ns | 120A | 4V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 349W Tc | 0.0016Ohm | 1008 mJ | 40V | N-Channel | 11340pF @ 25V | 1.6m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TK7A45DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $5.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 540pF | 18ns | 8 ns | 6.5A | 30V | 450V | 35W Tc | N-Channel | 540pF @ 25V | 1.2Ohm @ 3.3A, 10V | 4.4V @ 1mA | 6.5A Ta | 11nC @ 10V | 1.2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF11N60T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fcp11n60-datasheets-4097.pdf | 600V | 11A | TO-220-3 Full Pack | Lead Free | 3 | 2.27g | 3 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 36W | 1 | 34 ns | 98ns | 56 ns | 119 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 36W Tc | TO-220AB | 600V | N-Channel | 1490pF @ 25V | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 52nC @ 10V | 10V | ±30V |
