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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIR438DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir438dpt1ge3-datasheets-9214.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5.4W | 1 | FET General Purpose Power | R-XDSO-C5 | 37 ns | 21ns | 20 ns | 41 ns | 60A | 20V | SILICON | DRAIN | 5.4W Ta 83W Tc | 40A | 0.0023Ohm | 25V | N-Channel | 4560pF @ 10V | 1 V | 1.8m Ω @ 20A, 10V | 2.3V @ 250μA | 60A Tc | 105nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NP75N04YUG-E1-AY | Renesas Electronics America | $7.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np75n04yuge1ay-datasheets-9023.pdf | 8-SMD, Flat Lead Exposed Pad | 5 | 16 Weeks | 8 | EAR99 | No | DUAL | 8 | 1W | 1 | FET General Purpose Power | R-PDSO-F5 | 27 ns | 10ns | 6 ns | 66 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1W Ta 138W Tc | 450 pF | N-Channel | 6450pF @ 25V | 4.8m Ω @ 37.5A, 10V | 4V @ 250μA | 75A Tc | 116nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB9N50CTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqb9n50ctm-datasheets-9090.pdf | 500V | 9A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 7 Weeks | 1.31247g | No SVHC | 800mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 135W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 65ns | 64 ns | 93 ns | 9A | 30V | SILICON | DRAIN | SWITCHING | 2V | 135W Tc | 9A | 500V | N-Channel | 1030pF @ 25V | 800m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STB9NK80Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb9nk80z-datasheets-8964.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 3 | EAR99 | No | STB9N | 1 | Single | 125W | 20 ns | 12ns | 22 ns | 45 ns | 5.2A | 30V | 125W Tc | 800V | N-Channel | 1138pF @ 25V | 1.8 Ω @ 2.6A, 10V | 4.5V @ 100μA | 5.2A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8010ET30 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerWDFN | Lead Free | 5 | 12 Weeks | 152.7mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | DUAL | NO LEAD | Single | 1 | S-PDSO-N5 | 174A | SILICON | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 65W Tc | MO-240BA | 30A | 0.0013Ohm | 250 pF | 153 mJ | N-Channel | 5860pF @ 15V | 75ns | 42ns | 1.3m Ω @ 30A, 10V | 2.5V @ 1mA | 30A Ta 174A Tc | 94nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI4122DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4122dyt1ge3-datasheets-9040.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 4.5MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 30 | 3W | 1 | FET General Purpose Power | 42 ns | 34ns | 28 ns | 45 ns | 27.2A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5V | 3W Ta 6W Tc | 225 pF | 40V | N-Channel | 4200pF @ 20V | 4.5m Ω @ 15A, 10V | 2.5V @ 250μA | 27.2A Tc | 95nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| SIR402DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sir402dpt1ge3-datasheets-9004.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 6mOhm | 8 | yes | EAR99 | No | DUAL | C BEND | 8 | 1 | Single | 4.2W | 1 | FET General Purpose Power | R-XDSO-C5 | 25 ns | 20ns | 15 ns | 25 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 4.2W Ta 36W Tc | 20.7A | 70A | N-Channel | 1700pF @ 15V | 6m Ω @ 20A, 10V | 2.2V @ 250μA | 35A Tc | 42nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPP50N10S3L16AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp50n10s3l16aksa1-datasheets-9101.pdf | TO-220-3 | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 10 ns | 5ns | 28 ns | 50A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | 100W Tc | TO-220AB | 200A | 0.0209Ohm | N-Channel | 4180pF @ 25V | 15.7m Ω @ 50A, 10V | 2.4V @ 60μA | 50A Tc | 64nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4497DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si4497dyt1ge3-datasheets-9111.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 3.3mOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | 3.5W | 1 | 150°C | 19 ns | 13ns | 25 ns | 115 ns | -24.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -2.5V | 3.5W Ta 7.8W Tc | 36A | -30V | P-Channel | 9685pF @ 15V | -1 V | 3.3m Ω @ 20A, 10V | 2.5V @ 250μA | 36A Tc | 285nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TPH1R306PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-PowerVDFN | 8 Weeks | 60V | 960mW Ta 170W Tc | N-Channel | 8100pF @ 30V | 1.34m Ω @ 50A, 10V | 2.5V @ 1mA | 100A Tc | 91nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS402DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis402dnt1ge3-datasheets-9057.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 6mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.8W | 1 | FET General Purpose Power | S-XDSO-C5 | 25 ns | 20ns | 15 ns | 25 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3V | 3.8W Ta 52W Tc | 70A | N-Channel | 1700pF @ 15V | 6m Ω @ 19A, 10V | 2.2V @ 250μA | 35A Tc | 42nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| RCX220N25 | ROHM Semiconductor | $1.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | Lead Free | 3 | 13 Weeks | EAR99 | not_compliant | 8541.29.00.95 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 22A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 2.23W Ta 40W Tc | TO-220AB | 88A | 0.14Ohm | 36.8 mJ | N-Channel | 3200pF @ 25V | 140m Ω @ 11A, 10V | 5V @ 1mA | 22A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP3651U | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp3651u-datasheets-8946.pdf | 100V | 80A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 18MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 255W | 1 | FET General Purpose Power | 15 ns | 16ns | 14 ns | 32 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 4.5V | 255W Tc | TO-220AB | 220A | 266 mJ | 100V | N-Channel | 5522pF @ 25V | 18m Ω @ 80A, 10V | 5.5V @ 250μA | 80A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BUK9609-75A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk960975a118-datasheets-8960.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 230W | 1 | R-PSSO-G2 | 47 ns | 185ns | 226 ns | 424 ns | 75A | 10V | 75V | SILICON | DRAIN | SWITCHING | 230W Tc | 440A | 0.00995Ohm | 562 mJ | 75V | N-Channel | 8840pF @ 25V | 8.5m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 4.5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF630STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf630spbf-datasheets-3326.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3W | 1 | D2PAK (TO-263) | 800pF | 9.4 ns | 28ns | 20 ns | 39 ns | 9A | 20V | 200V | 3W Ta 74W Tc | 400mOhm | 200V | N-Channel | 800pF @ 25V | 400mOhm @ 5.4A, 10V | 4V @ 250μA | 9A Tc | 43nC @ 10V | 400 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP048NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irfp048npbf-datasheets-8977.pdf | 55V | 36A | TO-247-3 | 15.875mm | 20.3mm | 5.3mm | Contains Lead, Lead Free | 3 | 10 Weeks | No SVHC | 3 | 5.45mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Single | 130W | 1 | FET General Purpose Power | 11 ns | 78ns | 48 ns | 32 ns | 64A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 140W Tc | TO-247AC | 140 ns | 62A | 270 mJ | 55V | N-Channel | 1900pF @ 25V | 4 V | 16m Ω @ 37A, 10V | 4V @ 250μA | 64A Tc | 89nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| RSJ800N06TL | ROHM Semiconductor | $12.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | 83 | 80A | 60V | N-Channel | 80A Ta | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS8027S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdms8027s-datasheets-8996.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 5 | 26 Weeks | 74mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | Single | 36W | 1 | FET General Purpose Power | R-PDSO-F5 | 10 ns | 2.3ns | 6 ns | 25 ns | 22A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 36W Tc | MO-240AA | 0.005Ohm | 33 mJ | 30V | N-Channel | 1815pF @ 15V | 1.5 V | 5m Ω @ 18A, 10V | 3V @ 1mA | 18A Ta 22A Tc | 31nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AO4405E | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 30V | 2.5W Ta | P-Channel | 495pF @ 15V | 45m Ω @ 6A, 10V | 1.5V @ 250μA | 6A Ta | 16nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0391DPA-00#J5A | Renesas Electronics America | $1.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk0391dpa00j5a-datasheets-8818.pdf | 8-PowerWDFN | 84 Weeks | yes | NOT SPECIFIED | 8 | NOT SPECIFIED | 50A | 30V | 50W Tc | N-Channel | 5600pF @ 10V | 2.9m Ω @ 25A, 10V | 2.5V @ 1mA | 50A Ta | 34nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6007KNX | ROHM Semiconductor | $3.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 Full Pack | 3 | 40 Weeks | EAR99 | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 46W Tc | TO-220AB | 7A | 21A | 0.62Ohm | 133 mJ | N-Channel | 470pF @ 25V | 620m Ω @ 2.4A, 10V | 5V @ 1mA | 7A Tc | 14.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6009KNJTL | ROHM Semiconductor | $1.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 94W Tc | 9A | 27A | 0.535Ohm | 153 mJ | N-Channel | 540pF @ 25V | 535m Ω @ 2.8A, 10V | 5V @ 1mA | 9A Tc | 16.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF7N65C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fqpf7n65cydtu-datasheets-4802.pdf | 650V | 7A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 2.27g | No SVHC | 1.4Ohm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | FAST SWITCHING | Tin | not_compliant | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 52W | 1 | FET General Purpose Power | Not Qualified | 20 ns | 50ns | 55 ns | 90 ns | 7A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 52W Tc | TO-220AB | 7A | 28A | 650V | N-Channel | 1245pF @ 25V | 1.4 Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| FDS2734 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fds2734-datasheets-8738.pdf | 250V | 3A | 8-SOIC (0.154, 3.90mm Width) | 4mm | 1.5mm | 5mm | Lead Free | 8 | 9 Weeks | 130mg | No SVHC | 117MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 23 ns | 11ns | 11 ns | 40 ns | 3A | 20V | 250V | SILICON | 3V | 2.5W Ta | 3A | 50A | 250V | N-Channel | 2610pF @ 100V | 3 V | 117m Ω @ 3A, 10V | 4V @ 250μA | 3A Ta | 45nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| PSMN2R0-30BL,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn2r030bl118-datasheets-8916.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 211W | 1 | R-PSSO-G2 | 63 ns | 125ns | 59 ns | 111 ns | 100A | 20V | 30V | SILICON | DRAIN | SWITCHING | 211W Tc | 0.0029Ohm | 555 mJ | 30V | N-Channel | 6810pF @ 15V | 2.1m Ω @ 25A, 10V | 2.15V @ 1mA | 100A Tc | 117nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDM2206-800LR SL PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cdm2206800lrslpbfree-datasheets-8919.pdf | TO-220-3 | 7 Weeks | 800V | 110W Tc | N-Channel | 950m Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 24.3nC @ 10V | 10V | 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6008FNJTL | ROHM Semiconductor | $1.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 10 Weeks | 83 | No | SINGLE | GULL WING | 1 | FET General Purpose Powers | R-PSSO-G2 | 20 ns | 25ns | 30 ns | 60 ns | 8A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 50W Tc | 8A | 32A | 0.95Ohm | 4.3 mJ | N-Channel | 580pF @ 25V | 950m Ω @ 4A, 10V | 4V @ 1mA | 8A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STDLED656 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stdled656-datasheets-8728.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | EAR99 | No | STDLE | 14 ns | 10ns | 24 ns | 44 ns | 6A | 30V | 650V | 70W Tc | N-Channel | 895pF @ 100V | 1.3 Ω @ 2.7A, 10V | 4.5V @ 50μA | 6A Tc | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6423DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si6423dqt1e3-datasheets-8718.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 8.5MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.05W | 1 | Other Transistors | 50 ns | 75ns | 75 ns | 270 ns | -9.5A | 8V | SILICON | SWITCHING | 12V | -800mV | 1.05W Ta | P-Channel | 8.5m Ω @ 9.5A, 4.5V | 800mV @ 400μA | 8.2A Ta | 110nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| IRF630STRLPBF | Vishay Siliconix | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf630spbf-datasheets-3326.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 400mOhm | 3 | No | 1 | Single | 3W | 1 | D2PAK (TO-263) | 800pF | 9.4 ns | 28ns | 20 ns | 39 ns | 9A | 20V | 200V | 3W Ta 74W Tc | 400mOhm | 200V | N-Channel | 800pF @ 25V | 400mOhm @ 5.4A, 10V | 4V @ 250μA | 9A Tc | 43nC @ 10V | 400 mΩ | 10V | ±20V |
