Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF710STRLPBF | Vishay Siliconix | $3.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf710strlpbf-datasheets-8568.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 12 Weeks | 1.437803g | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 170pF | 8 ns | 9.9ns | 11 ns | 21 ns | 2A | 20V | 400V | 3.1W Ta 36W Tc | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 17nC @ 10V | 3.6 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| R6007ENJTL | ROHM Semiconductor | $1.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | No SVHC | 83 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 4V | 40W Tc | 7A | 14A | 0.62Ohm | 133 mJ | N-Channel | 390pF @ 25V | 620m Ω @ 2.4A, 10V | 4V @ 1mA | 7A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STD10NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 16 Weeks | No SVHC | 600mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD10 | 3 | Single | 30 | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.2 ns | 10ns | 9.8 ns | 32 ns | 8A | 25V | SILICON | SWITCHING | 600V | 4V | 70W Tc | 8A | 650V | N-Channel | 577pF @ 50V | 600m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 20nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||
| STB5N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb5n80k5-datasheets-8714.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 26 Weeks | ACTIVE (Last Updated: 7 months ago) | STB5N | 800V | 60W Tc | N-Channel | 177pF @ 100V | 1.75 Ω @ 2A, 10V | 5V @ 100μA | 4A Tc | 5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4982NFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs4982nft1g-datasheets-8417.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 5 | 1 | Single | 1 | Other Transistors | 17.2 ns | 31.6ns | 12 ns | 34.3 ns | 207A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 36A | 30V | N-Channel | 6000pF @ 15V | 1.3m Ω @ 25A, 10V | 2.2V @ 1mA | 26.5A Ta 207A Tc | 84nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STDLED656 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stdled656-datasheets-8728.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | EAR99 | No | STDLE | 14 ns | 10ns | 24 ns | 44 ns | 6A | 30V | 650V | 70W Tc | N-Channel | 895pF @ 100V | 1.3 Ω @ 2.7A, 10V | 4.5V @ 50μA | 6A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6423DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si6423dqt1e3-datasheets-8718.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 8.5MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.05W | 1 | Other Transistors | 50 ns | 75ns | 75 ns | 270 ns | -9.5A | 8V | SILICON | SWITCHING | 12V | -800mV | 1.05W Ta | P-Channel | 8.5m Ω @ 9.5A, 4.5V | 800mV @ 400μA | 8.2A Ta | 110nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| IRF630STRLPBF | Vishay Siliconix | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf630spbf-datasheets-3326.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 400mOhm | 3 | No | 1 | Single | 3W | 1 | D2PAK (TO-263) | 800pF | 9.4 ns | 28ns | 20 ns | 39 ns | 9A | 20V | 200V | 3W Ta 74W Tc | 400mOhm | 200V | N-Channel | 800pF @ 25V | 400mOhm @ 5.4A, 10V | 4V @ 250μA | 9A Tc | 43nC @ 10V | 400 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STB55NF06T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp55nf06-datasheets-8143.pdf | 60V | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 12 Weeks | No SVHC | 18mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB55N | 3 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 50ns | 15 ns | 36 ns | 27.5A | 20V | SILICON | SWITCHING | 3V | 110W Tc | 200A | 60V | N-Channel | 1300pF @ 25V | 18m Ω @ 27.5A, 10V | 4V @ 250μA | 50A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| NTMFS4931NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs4931nt1g-datasheets-8725.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 246A | SILICON | DRAIN | SWITCHING | 30V | 30V | 950mW Ta | 23A | N-Channel | 9821pF @ 15V | 1.1m Ω @ 30A, 10V | 2.2V @ 250μA | 23A Ta 246A Tc | 128nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| PSMN2R8-40BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn2r840bs118-datasheets-8798.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 211W | 1 | R-PSSO-G2 | 28 ns | 29ns | 23 ns | 52 ns | 100A | 20V | 40V | SILICON | DRAIN | SWITCHING | 211W Tc | 797A | 0.0029Ohm | 407 mJ | 40V | N-Channel | 4491pF @ 20V | 2.9m Ω @ 10A, 10V | 4V @ 1mA | 100A Tc | 71nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| PSMN070-200B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/nexperiausainc-psmn070200b118-datasheets-8807.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | 70MOhm | 3 | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 250W | 1 | FET General Purpose Power | R-PSSO-G2 | 22 ns | 100ns | 90 ns | 80 ns | 35A | 20V | 200V | SILICON | DRAIN | SWITCHING | 250W Tc | 462 mJ | 200V | N-Channel | 4570pF @ 25V | 70m Ω @ 17A, 10V | 4V @ 1mA | 35A Tc | 77nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STB2N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std2n62k3-datasheets-5920.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3.6Ohm | 3 | EAR99 | No | STB2N | 45W | 1 | 8 ns | 4.4ns | 22 ns | 21 ns | 2.2A | 30V | 45W Tc | 620V | N-Channel | 340pF @ 50V | 3.6 Ω @ 1.1A, 10V | 4.5V @ 50μA | 2.2A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7608-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk760855a118-datasheets-8504.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | Not Qualified | R-PSSO-G2 | 75A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 254W Tc | 504A | 0.008Ohm | 670 mJ | N-Channel | 4352pF @ 25V | 8m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STL11N4LLF5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl11n4llf5-datasheets-8370.pdf | 8-PowerVDFN | 8 | 8 | EAR99 | No | DUAL | STL11 | Single | 50W | 1 | FET General Purpose Powers | 14 ns | 42ns | 5.2 ns | 37 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 2.9W Ta 50W Tc | 44A | 40V | N-Channel | 1570pF @ 25V | 9.7m Ω @ 5.5A, 10V | 2.5V @ 250μA | 11A Tc | 12.9nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C426NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-nvmfs5c426nlt1g-datasheets-8300.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.8W Ta 128W Tc | N-Channel | 5600pF @ 25V | 1.2m Ω @ 50A, 10V | 2V @ 250μA | 41A Ta 237A Tc | 93nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT68P20T | IXYS | $17.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtt68p20t-datasheets-8430.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 3 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 568W | 1 | Other Transistors | R-PSSO-G2 | 68A | 15V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 568W Tc | 200A | 0.055Ohm | 2500 mJ | P-Channel | 33400pF @ 25V | 55m Ω @ 34A, 10V | 4V @ 250μA | 68A Tc | 380nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||
| FDS3512 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds3512-datasheets-8432.pdf | 80V | 4A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 9 Weeks | 130mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 7 ns | 3ns | 4 ns | 24 ns | 4A | 20V | SILICON | SWITCHING | 2.5W Ta | 4A | 0.07Ohm | 80V | N-Channel | 634pF @ 40V | 70m Ω @ 4A, 10V | 4V @ 250μA | 4A Ta | 18nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI7623DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7623dnt1ge3-datasheets-8315.pdf&product=vishaysiliconix-si7623dnt1ge3-6846967 | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 1 | Single | 30 | 3.7W | 1 | S-PDSO-C5 | -35A | 12V | SILICON | DRAIN | SWITCHING | 20V | -400mV | 3.7W Ta 52W Tc | 20 mJ | -20V | P-Channel | 5460pF @ 10V | 3.8m Ω @ 20A, 10V | 1.5V @ 250μA | 35A Tc | 180nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||
| STD12N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | YES | SINGLE | THROUGH-HOLE | STD12 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 85W Tc | 9A | 36A | 0.45Ohm | 117 mJ | N-Channel | 538pF @ 100V | 450m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 16nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD9507L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdd9507lf085-datasheets-8483.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | ACTIVE (Last Updated: 19 hours ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 227W Ta | P-Channel | 6250pF @ 20V | 4.4m Ω @ 80A, 10V | 3V @ 250μA | 100A Tc | 130nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM40061EL_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40061elge3-datasheets-8486.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 40V | 150W Tc | P-Channel | 14500pF @ 25V | 5.1mOhm @ 30A, 10V | 2.5V @ 250μA | 100A Tc | 280nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB12N65L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | yes | NOT SPECIFIED | NOT SPECIFIED | 12A | 650V | 278W Tc | N-Channel | 2150pF @ 25V | 720m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD11NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf11nm50n-datasheets-5320.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 16 Weeks | No SVHC | 470mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD11 | 3 | Single | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 10ns | 10 ns | 33 ns | 8.5A | 25V | SILICON | SWITCHING | 3V | 70W Tc | 9A | 500V | N-Channel | 547pF @ 50V | 470m Ω @ 4.5A, 10V | 4V @ 250μA | 8.5A Tc | 19nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||
| TK5P60W,RVQ | Toshiba Semiconductor and Storage | $1.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | Single | 18ns | 7 ns | 50 ns | 5.4A | 30V | 600V | 60W Tc | N-Channel | 380pF @ 300V | 900m Ω @ 2.7A, 10V | 3.7V @ 270μA | 5.4A Ta | 10.5nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB4N80TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqb4n80tm-datasheets-8517.pdf | 800V | 3.9A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | Lead Free | 2 | 10 Weeks | 1.31247g | No SVHC | 3.6Ohm | 3 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 3.13W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 45ns | 35 ns | 35 ns | 3.9A | 30V | SILICON | DRAIN | SWITCHING | 5V | 3.13W Ta 130W Tc | 460 mJ | 800V | N-Channel | 880pF @ 25V | 3.6 Ω @ 1.95A, 10V | 5V @ 250μA | 3.9A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| RD3L220SNTL1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rd3l220sntl1-datasheets-8226.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 20W Tc | 22A | 44A | 0.033Ohm | N-Channel | 1500pF @ 10V | 26m Ω @ 22A, 10V | 3V @ 1mA | 22A Ta | 30nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC86261P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdmc86261p-datasheets-8540.pdf | 8-PowerWDFN | 3.3mm | 725μm | 3.3mm | 5 | 12 Weeks | 165.33333mg | 8 | ACTIVE (Last Updated: 21 hours ago) | yes | EAR99 | Gold | No | e4 | DUAL | 1 | Single | 2.3W | 1 | Other Transistors | S-PDSO-N5 | 11 ns | 10ns | 20 ns | 18 ns | 2.7A | 25V | SILICON | DRAIN | SWITCHING | 150V | 2.3W Ta 40W Tc | 9A | 20A | -150V | P-Channel | 1360pF @ 75V | 160m Ω @ 2.4A, 10V | 4V @ 250μA | 2.7A Ta 9A Tc | 24nC @ 10V | 6V 10V | ±25V | ||||||||||||||||||||||||||||||||||
| CSD17505Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 16 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD17505 | 8 | Single | 3.2W | 1 | FET General Purpose Power | 8.3 ns | 11.5ns | 6.1 ns | 15 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 1.3V | 3.2W Ta | 24A | 0.0046Ohm | 290 mJ | 30V | N-Channel | 1980pF @ 15V | 1.3 V | 3.5m Ω @ 20A, 10V | 1.8V @ 250μA | 24A Ta 100A Tc | 13nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| RD3S075CNTL1 | ROHM Semiconductor | $1.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rd3s075cntl1-datasheets-8397.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 190V | 190V | 52W Tc | 7.5A | 30A | 0.347Ohm | 4.81 mJ | N-Channel | 1100pF @ 25V | 336m Ω @ 3.8A, 10V | 2.5V @ 1mA | 7.5A Tc | 30nC @ 10V | 4V 10V | ±20V |
