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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMP3008SFGQ-7 | Diodes Incorporated | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp3008sfgq13-datasheets-0062.pdf | 8-PowerVDFN | 15 Weeks | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 8.6A | 30V | 900mW Ta | P-Channel | 2230pF @ 15V | 17m Ω @ 10A, 10V | 2.1V @ 250μA | 8.6A Ta | 47nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6010LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth6010lk313-datasheets-4946.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 23 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3.1W Ta | 14.8A | 130A | 0.012Ohm | 20 mJ | N-Channel | 2090pF @ 30V | 8m Ω @ 20A, 10V | 3V @ 250μA | 14.8A Ta 70A Tc | 41.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SUD19P06-60-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sud19p0660ge3-datasheets-5898.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | 60mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 2.3W | 1 | Other Transistors | 150°C | R-PSSO-G2 | 8 ns | 9ns | 30 ns | 65 ns | -18.3A | 20V | SILICON | DRAIN | SWITCHING | 60V | 2.3W Ta 38.5W Tc | 24.2 mJ | -60V | P-Channel | 1710pF @ 25V | 60m Ω @ 10A, 10V | 3V @ 250μA | 18.3A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| NTMFS5C430NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c430nlt1g-datasheets-4952.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | not_compliant | e3 | Tin (Sn) | 200A | 40V | 2V | 3.8W Ta 110W Tc | N-Channel | 4300pF @ 20V | 1.5m Ω @ 50A, 10V | 2V @ 250μA | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C682NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c682nlt1g-datasheets-4971.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 6 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 28W Tc | N-Channel | 410pF @ 25V | 21m Ω @ 10A, 10V | 2V @ 16μA | 25A Tc | 5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSD140P06TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-2sa1774ebtlr-datasheets-4143.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.65mm | Lead Free | 2 | 10 Weeks | 3 | EAR99 | No | e2 | Tin/Copper (Sn98Cu2) | GULL WING | 3 | 1 | Single | 20W | 1 | 150°C | R-PSSO-G2 | 20 ns | 45ns | 110 ns | 240 ns | 14A | 20V | SILICON | SWITCHING | 60V | 20W Tc | 28A | -60V | P-Channel | 1900pF @ 10V | 84m Ω @ 14A, 10V | 3V @ 1mA | 14A Ta | 27nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDS4480 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fds4480-datasheets-4892.pdf | 40V | 10.8A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 9 Weeks | 130mg | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 12 ns | 9ns | 15 ns | 30 ns | 10.8A | 30V | SILICON | SWITCHING | 3.9V | 2.5W Ta | 45A | 240 mJ | 40V | N-Channel | 1686pF @ 20V | 12m Ω @ 10.8A, 10V | 5V @ 250μA | 10.8A Ta | 41nC @ 10V | 10V | +30V, -20V | |||||||||||||||||||||||||||||||||
| SI4636DY-T1-GE3 | Vishay Siliconix | $7.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4636dyt1ge3-datasheets-4992.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.5W | 1 | 32 ns | 87ns | 19 ns | 43 ns | 12.7A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta 4.4W Tc | 60A | 20 mJ | 30V | N-Channel | 2635pF @ 15V | 8.5m Ω @ 10A, 10V | 2.5V @ 250μA | 17A Tc | 60nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| SQJ872EP-T1_GE3 | Vishay Siliconix | $1.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj872ept1ge3-datasheets-4995.pdf | 8-PowerTDFN | 12 Weeks | PowerPAK® SO-8 | 150V | 55W Tc | N-Channel | 1045pF @ 25V | 35.5mOhm @ 10A, 10V | 3.5V @ 250μA | 24.5A Tc | 22nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK380P60Y,RQ | Toshiba Semiconductor and Storage | $1.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | DPAK | 600V | 30W Tc | N-Channel | 590pF @ 300V | 380mOhm @ 4.9A, 10V | 4V @ 360μA | 9.7A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4628DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4628dyt1ge3-datasheets-4807.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 15 Weeks | 186.993455mg | No SVHC | 3mOhm | 8 | No | 1 | 7.8W | 1 | 8-SO | 3.45nF | 28 ns | 20ns | 13 ns | 39 ns | 38mA | 20V | 30V | 1V | 3.5W Ta 7.8W Tc | 2.4mOhm | N-Channel | 3450pF @ 15V | 3mOhm @ 20A, 10V | 2.5V @ 1mA | 38A Tc | 87nC @ 10V | 3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C468NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c468nlt1g-datasheets-4804.pdf | 8-PowerTDFN | Lead Free | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.5W Ta 28W Tc | N-Channel | 570pF @ 25V | 10.3m Ω @ 20A, 10V | 2V @ 250μA | 7.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD6690A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdd6690a-datasheets-4783.pdf | 30V | 46A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 10 Weeks | 260.37mg | No SVHC | 12MOhm | 3 | ACTIVE (Last Updated: 18 hours ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | GULL WING | Single | 3.3W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 7ns | 12 ns | 29 ns | 46A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.9V | 3.3W Ta 56W Tc | 30V | N-Channel | 1230pF @ 15V | 1.9 V | 12m Ω @ 12A, 10V | 3V @ 250μA | 12A Ta 46A Tc | 18nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SIR664DP-T1-GE3 | Vishay Siliconix | $3.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir664dpt1ge3-datasheets-4773.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 8 | EAR99 | Tin | No | 5W | DUAL | C BEND | Single | 5W | 1 | R-PDSO-C5 | 12ns | 7 ns | 24 ns | 60A | 20V | DRAIN | SWITCHING | 0.006Ohm | 20 mJ | 60V | N-Channel | 1750pF @ 30V | 6m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 40nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||
| TSM5NC50CF C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm5nc50cfc0g-datasheets-4878.pdf | TO-220-3 Full Pack | 3 | 20 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 40W Tc | TO-220AB | 5A | 15A | 122.5 mJ | N-Channel | 586pF @ 50V | 1.38 Ω @ 1.7A, 10V | 4.5V @ 250μA | 5A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4866BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4866bdyt1ge3-datasheets-4881.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 186.993455mg | Unknown | 5.3mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | 150°C | 13 ns | 12ns | 9 ns | 57 ns | 16.1A | 8V | SILICON | SWITCHING | 1V | 2.5W Ta 4.45W Tc | 12V | N-Channel | 5020pF @ 6V | 5.3m Ω @ 12A, 4.5V | 1V @ 250μA | 21.5A Tc | 80nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| NTTFS5C670NLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/onsemiconductor-nttfs5c670nltag-datasheets-4862.pdf | 8-PowerWDFN | Lead Free | 18 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 17 hours ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 70A | 60V | 2V | 3.2W Ta 63W Tc | N-Channel | 1400pF @ 25V | 6.5m Ω @ 35A, 10V | 2V @ 250μA | 16A Ta 70A Tc | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD10950E_GE3 | Vishay Siliconix | $1.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd10950ege3-datasheets-4870.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 250V | 62W Tc | N-Channel | 785pF @ 25V | 162mOhm @ 12A, 10V | 3.5V @ 250μA | 11.5A Tc | 16nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF5N50UT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf5n50ut-datasheets-4940.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 7 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 28W | 1 | FET General Purpose Power | Not Qualified | 14 ns | 21ns | 20 ns | 27 ns | 4A | 30V | SILICON | ISOLATED | SWITCHING | 28W Tc | TO-220AB | 4A | 2Ohm | 500V | N-Channel | 650pF @ 25V | 2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| DMT10H015LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmt10h015lss13-datasheets-4660.pdf | 8-SOIC (0.154, 3.90mm Width) | 19 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 8.3A | 100V | 1.2W Ta | N-Channel | 1871pF @ 50V | 16m Ω @ 20A, 10V | 3.5V @ 250μA | 8.3A Ta | 33.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3438DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3438dvt1e3-datasheets-2942.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | 35.5mOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | FET General Purpose Power | 16 ns | 17ns | 10 ns | 16 ns | 5.5A | 20V | SILICON | SWITCHING | 2W Ta 3.5W Tc | 7.4A | 20A | 40V | N-Channel | 640pF @ 20V | 35.5m Ω @ 5A, 10V | 3V @ 250μA | 7.4A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| DMTH6010SK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth6010sk313-datasheets-4744.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 23 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3.1W Ta | 16.3A | 80A | 0.008Ohm | 27.7 mJ | N-Channel | 1940pF @ 30V | 8m Ω @ 20A, 10V | 4V @ 250μA | 16.3A Ta 70A Tc | 36.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| RCJ120N20TL | ROHM Semiconductor | $1.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | 83 | EAR99 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSSO-G2 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 1.56W Ta 40W Tc | 48A | 0.325Ohm | 11.6 mJ | N-Channel | 740pF @ 25V | 325m Ω @ 6A, 10V | 5.25V @ 1mA | 12A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| STD35NF06LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std35nf06lt4-datasheets-4686.pdf | 60V | 35A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.63mm | 6.2mm | Lead Free | 2 | No SVHC | 17mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | GULL WING | 260 | STD35 | 3 | 1 | Single | 30 | 80W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 20 ns | 100ns | 20 ns | 40 ns | 17.5A | 16V | SILICON | DRAIN | SWITCHING | 1V | 80W Tc | TO-252AA | 280 mJ | 60V | N-Channel | 1700pF @ 25V | 17m Ω @ 17.5A, 10V | 2.5V @ 250μA | 35A Tc | 33nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||
| STL45N10F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl45n10f7ag-datasheets-4670.pdf | 8-PowerVDFN | 5 | ACTIVE (Last Updated: 8 months ago) | YES | DUAL | FLAT | NOT SPECIFIED | STL45 | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 72W Tc | 18A | 72A | 0.024Ohm | 150 mJ | N-Channel | 1450pF @ 50V | 24m Ω @ 9A, 10V | 4.5V @ 250μA | 18A Tc | 19.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ418EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj418ept1ge3-datasheets-4174.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 68W Tc | 48A | 160A | 0.014Ohm | 65 mJ | N-Channel | 1700pF @ 25V | 14m Ω @ 10A, 10V | 3.5V @ 250μA | 48A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R6-30MLHX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn1r630mlhx-datasheets-4563.pdf | SOT-1210, 8-LFPAK33 | 26 Weeks | 30V | 106W Ta | N-Channel | 2.369nF @ 15V | 1.9m Ω @ 25A, 10V | 2.2V @ 1mA | 160A Ta | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCC8008(TE12L,QM) | Toshiba Semiconductor and Storage | $4.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | No | 7.9ns | 16 ns | 25A | 25V | 30V | 700mW Ta 30W Tc | N-Channel | 1600pF @ 10V | 6.8m Ω @ 12.5A, 10V | 2.5V @ 1A | 25A Ta | 30nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7692A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7692a-datasheets-4557.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 5 | 18 Weeks | 68.1mg | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N5 | 8 ns | 2.7ns | 2.3 ns | 17 ns | 13.5A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.5W Ta 27W Tc | MO-240AA | 45A | 50A | 30V | N-Channel | 1350pF @ 15V | 2 V | 8m Ω @ 13A, 10V | 3V @ 250μA | 13.5A Ta 28A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| DMP4015SK3Q-13 | Diodes Incorporated | $0.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp4015sk3q13-datasheets-4420.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | TO-252 | 4.234nF | 35A | 40V | 3.5W Ta | P-Channel | 4234pF @ 20V | 11mOhm @ 9.8A, 10V | 2.5V @ 250μA | 14A Ta 35A Tc | 47.5nC @ 5V | 11 mΩ | 4.5V 10V | ±25V |
