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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7108DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7108dnt1ge3-datasheets-8585.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 4.9mOhm | 8 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 60 ns | 22A | 16V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 60A | 24 mJ | 20V | N-Channel | 2 V | 4.9m Ω @ 22A, 10V | 2V @ 250μA | 14A Ta | 30nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||
| TPH3300CNH,L1Q | Toshiba Semiconductor and Storage | $5.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 850.995985mg | 8 | No | 1 | Single | 16 ns | 5.8ns | 5.1 ns | 17 ns | 18A | 20V | 1.6W Ta 57W Tc | 150V | N-Channel | 1100pF @ 75V | 33m Ω @ 9A, 10V | 4V @ 300μA | 18A Ta | 10.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD7N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std7n65m2-datasheets-6720.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3.949996g | No SVHC | 3 | EAR99 | NOT SPECIFIED | STD7 | 1 | NOT SPECIFIED | 8 ns | 20ns | 20 ns | 30 ns | 5A | 25V | 3V | 60W Tc | 650V | N-Channel | 270pF @ 100V | 1.15 Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 9nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMJ7N70SK3-13 | Diodes Incorporated | $5.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmj7n70sk313-datasheets-6507.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | 3.949996g | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 8.5 ns | 11.6ns | 10 ns | 24.5 ns | 3.9A | 30V | SILICON | DRAIN | SWITCHING | 28W Tc | 700V | N-Channel | 351pF @ 50V | 1.25 Ω @ 2.5A, 10V | 4V @ 250μA | 3.9A Tc | 13.9nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| TSM10NC65CF C0G | Taiwan Semiconductor Corporation | $13.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm10nc65cfc0g-datasheets-6509.pdf | TO-220-3 Full Pack | 3 | 20 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 45W Tc | TO-220AB | 10A | 30A | 0.9Ohm | 372 mJ | N-Channel | 1650pF @ 50V | 900m Ω @ 2A, 10V | 4.5V @ 250μA | 10A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB44N10TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqb44n10tm-datasheets-6447.pdf | 100V | 43.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 4 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 22 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 190ns | 100 ns | 90 ns | 43.5A | 25V | SILICON | DRAIN | SWITCHING | 3.75W Ta 146W Tc | 100V | N-Channel | 1800pF @ 25V | 39m Ω @ 21.75A, 10V | 4V @ 250μA | 43.5A Tc | 62nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| FQB11N40CTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqb11n40ctm-datasheets-6537.pdf | 400V | 10.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 14 hours ago) | yes | EAR99 | FAST SWITCHING | No | GULL WING | Single | 135W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 89ns | 81 ns | 81 ns | 10.5A | 30V | SILICON | DRAIN | SWITCHING | 135W Tc | 42A | 400V | N-Channel | 1090pF @ 25V | 530m Ω @ 5.25A, 10V | 4V @ 250μA | 10.5A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| RSJ400N06FRATL | ROHM Semiconductor | $6.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 50W Ta | 40A | 80A | 0.016Ohm | N-Channel | 2400pF @ 10V | 16m Ω @ 40A, 10V | 3V @ 1mA | 40A Ta | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N04S403AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb80n04s403atma1-datasheets-7004.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 16 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 14 ns | 12ns | 16 ns | 80A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 94W Tc | 200 mJ | N-Channel | 5260pF @ 25V | 3.7m Ω @ 80A, 10V | 4V @ 53μA | 80A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STL10N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl10n60m2-datasheets-6605.pdf | 8-PowerVDFN | Lead Free | 26 Weeks | 580mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL10 | 1 | Single | NOT SPECIFIED | 8.8 ns | 8ns | 13.2 ns | 32.5 ns | 5.5A | 25V | 48W Tc | 600V | N-Channel | 400pF @ 100V | 660m Ω @ 2.5A, 10V | 4V @ 250μA | 5.5A Tc | 13.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB86102LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-fdb86102lz-datasheets-6620.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 8 Weeks | 1.31247g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 6.6 ns | 2.1ns | 2.3 ns | 18.2 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 3.1W Ta | 50A | 0.024Ohm | 100V | N-Channel | 1275pF @ 50V | 1.5 V | 24m Ω @ 8.3A, 10V | 3V @ 250μA | 8.3A Ta 30A Tc | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| CDM2205-800FP SL | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cdm2205800fpsl-datasheets-6398.pdf | TO-220-3 Full Pack | 12 Weeks | 800V | 48W Tc | N-Channel | 705pF @ 25V | 2.7 Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 17.4nC @ 10V | 10V | 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL510STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl510strlpbf-datasheets-6331.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | 11 Weeks | 1.437803g | 3 | No | 1 | Single | D2PAK | 250pF | 9.3 ns | 47ns | 18 ns | 16 ns | 5.6A | 10V | 100V | 3.7W Ta 43W Tc | 540mOhm | 100V | N-Channel | 250pF @ 25V | 540mOhm @ 3.4A, 5V | 2V @ 250μA | 5.6A Tc | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQD50N05-11L_GE3 | Vishay Siliconix | $8.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n0511lge3-datasheets-6346.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 1.437803g | Unknown | 11mOhm | 3 | No | 1 | Single | TO-252AA | 2.106nF | 8.5 ns | 11.5ns | 7.5 ns | 22.5 ns | 50A | 20V | 50V | 2V | 75W Tc | 9mOhm | N-Channel | 2106pF @ 25V | 11mOhm @ 45A, 10V | 2.5V @ 250μA | 50A Tc | 52nC @ 10V | 11 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FQB5N60CTM-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fqb5n60ctmws-datasheets-6355.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4 Weeks | 4.5A | 600V | 100W Tc | N-Channel | 670pF @ 25V | 2.5 Ω @ 2.25A, 10V | 4V @ 250μA | 4.5A Tc | 19nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB75NF75LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb75nf75lt4-datasheets-6465.pdf | 75V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 12 Weeks | No SVHC | 11mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB75N | 3 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 35 ns | 155ns | 60 ns | 110 ns | 75A | 15V | SILICON | DRAIN | SWITCHING | 2.5V | 300W Tc | 680 mJ | 75V | N-Channel | 4300pF @ 25V | 11m Ω @ 37.5A, 10V | 2.5V @ 250μA | 75A Tc | 90nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||
| STL10N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl10n60m6-datasheets-6482.pdf | 8-PowerVDFN | 26 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 48W Tc | N-Channel | 660m Ω @ 2.75A, 10V | 4.75V @ 250μA | 5.5A Tc | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6574A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds6574a-datasheets-6427.pdf | 20V | 16A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 6MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 19.5 ns | 22ns | 82 ns | 173 ns | 16A | 8V | SILICON | SWITCHING | 600mV | 2.5W Ta | 20V | N-Channel | 7657pF @ 10V | 6m Ω @ 16A, 4.5V | 1.5V @ 250μA | 16A Ta | 105nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| IPP16CN10NGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp16cn10ngxksa1-datasheets-6502.pdf | 100V | 53A | TO-220-3 | Lead Free | 3 | 13 Weeks | No SVHC | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 100W | 1 | Not Qualified | 15 ns | 14ns | 7 ns | 27 ns | 53A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100W Tc | TO-220AB | 212A | 0.0165Ohm | 107 mJ | N-Channel | 3220pF @ 50V | 16.5m Ω @ 53A, 10V | 4V @ 61μA | 53A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STD37P3H6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ H6 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std37p3h6ag-datasheets-6225.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | NRND (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STD37 | NOT SPECIFIED | 49A | 30V | 60W Tc | P-Channel | 1630pF @ 25V | 15m Ω @ 25A, 10V | 4V @ 250μA | 49A Tc | 30.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD97N06-6M3L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqr97n066m3lge3-datasheets-3737.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 97A | 60V | 136W Tc | N-Channel | 6060pF @ 25V | 6.3m Ω @ 25A, 10V | 2.5V @ 250μA | 97A Tc | 125nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB5N50CTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqb5n50ctm-datasheets-6291.pdf | 500V | 5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 4 Weeks | 1.31247g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | FAST SWITCHING | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 73W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 12 ns | 46ns | 48 ns | 50 ns | 5A | 30V | SILICON | DRAIN | SWITCHING | 4V | 73W Tc | 5A | 20A | 500V | N-Channel | 625pF @ 25V | 1.4 Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 24nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| STB130N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb130n6f7-datasheets-6314.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 22 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STB130N | NOT SPECIFIED | 80A | 60V | 160W Tc | N-Channel | 2600pF @ 25V | 5m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD5N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu5n60m2-datasheets-4244.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 16 Weeks | 3.949996g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | GULL WING | NOT SPECIFIED | STD5N | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 11.8 ns | 3ns | 15 ns | 70 ns | 3.5A | 25V | SILICON | DRAIN | SWITCHING | 45W Tc | 80 mJ | 600V | N-Channel | 211pF @ 100V | 1.4 Ω @ 1.7A, 10V | 4V @ 250μA | 3.5A Tc | 8.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| FDMC3020DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc3020dc-datasheets-6326.pdf | 8-PowerTDFN | 3.3mm | 950μm | 3.3mm | 5 | 8 Weeks | 32.13mg | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | Single | 3W | 1 | FET General Purpose Power | S-PDSO-N5 | 9 ns | 3ns | 2 ns | 19 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 3W Ta 50W Tc | MO-240BA | 40A | 0.00625Ohm | 60 mJ | 30V | N-Channel | 1385pF @ 15V | 6.25m Ω @ 12A, 10V | 3V @ 250μA | 17A Ta 40A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| CSD18511KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | 3 | 6 Weeks | 3 | ACTIVE (Last Updated: 3 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | CSD18511 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 188W Ta | TO-220AB | 110A | 400A | 0.0042Ohm | 156 mJ | N-Channel | 5940pF @ 20V | 2.6m Ω @ 100A, 10V | 2.4V @ 250μA | 194A Ta | 64nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTD5862NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-ntd5862nt4g-datasheets-6351.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 15 Weeks | 3 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 96W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 70ns | 60 ns | 35 ns | 98A | 20V | SILICON | DRAIN | 60V | 60V | 115W Tc | 90A | 0.0057Ohm | 205 mJ | N-Channel | 6000pF @ 25V | 5.7m Ω @ 45A, 10V | 4V @ 250μA | 98A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI7892BDP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7892bdpt1ge3-datasheets-7461.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 4.2mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.8W | 1 | FET General Purpose Powers | R-XDSO-C5 | 20 ns | 20ns | 35 ns | 62 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1V | 1.8W Ta | 60A | N-Channel | 3775pF @ 15V | 1 V | 4.2m Ω @ 25A, 10V | 3V @ 250μA | 15A Ta | 40nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| IRF510STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf510spbf-datasheets-1259.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 540mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 43W Tc | 540mOhm | N-Channel | 180pF @ 25V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STL11N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TA | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 12 Weeks | 8 | STL11 | 1 | 25V | 650V | 85W Tc | N-Channel | 410pF @ 100V | 670m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 12.4nC @ 10V | 10V | ±25V |
