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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFB7540PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb7540pbf-datasheets-6164.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | 6.000006g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 12 ns | 76ns | 56 ns | 58 ns | 110A | 20V | SILICON | SWITCHING | 60V | 60V | 3.7V | 160W Tc | TO-220AB | N-Channel | 4555pF @ 25V | 5.1m Ω @ 65A, 10V | 3.7V @ 100μA | 110A Tc | 130nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FQPF2N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqpf2n80-datasheets-6173.pdf | 800V | 1.5A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 17 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 35W | 1 | FET General Purpose Power | 12 ns | 30ns | 28 ns | 25 ns | 1.5A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 35W Tc | 6A | 800V | N-Channel | 550pF @ 25V | 6.3 Ω @ 750mA, 10V | 5V @ 250μA | 1.5A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| BUK7Y2R0-40HX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | /files/nexperiausainc-buk7y2r040hx-datasheets-6081.pdf | SC-100, SOT-669 | 12 Weeks | compliant | 4 | 40V | 217W Ta | N-Channel | 5450pF @ 25V | 2m Ω @ 25A, 10V | 3.6V @ 1mA | 120A Ta | 90.5nC @ 10V | 10V | +20V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS26DN-T1-GE3 | Vishay Siliconix | $1.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss26dnt1ge3-datasheets-6162.pdf | PowerPAK® 1212-8S | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60V | 57W Tc | N-Channel | 1710pF @ 30V | 4.5m Ω @ 15A, 10V | 3.6V @ 250μA | 60A Tc | 37nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2052 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2052-datasheets-6200.pdf | Die | 10 Weeks | Die | 100V | N-Channel | 575pF @ 50V | 13.5mOhm @ 11A, 5V | 2.5V @ 3mA | 8.2A Ta | 4.5nC @ 5V | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7892BDP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7892bdpt1ge3-datasheets-7461.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 4.2mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.8W | 1 | FET General Purpose Powers | R-XDSO-C5 | 20 ns | 20ns | 35 ns | 62 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1V | 1.8W Ta | 60A | N-Channel | 3775pF @ 15V | 1 V | 4.2m Ω @ 25A, 10V | 3V @ 250μA | 15A Ta | 40nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IRF510STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf510spbf-datasheets-1259.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 540mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 43W Tc | 540mOhm | N-Channel | 180pF @ 25V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STL11N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TA | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 12 Weeks | 8 | STL11 | 1 | 25V | 650V | 85W Tc | N-Channel | 410pF @ 100V | 670m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 12.4nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP3203N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vp3203n3g-datasheets-1294.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 1 Weeks | 52.786812mg | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) - annealed | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | Other Transistors | R-PSSO-F3 | 10 ns | 15ns | 15 ns | 25 ns | 1.1A | 20V | SILICON | DRAIN | SWITCHING | 30V | 1.6W Ta | 4A | 0.6Ohm | -30V | P-Channel | 300pF @ 25V | 600m Ω @ 1.5A, 10V | 3.5V @ 10mA | 1.1A Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTMFS5C423NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c423nlt1g-datasheets-6127.pdf | 8-PowerTDFN | 5.1mm | 1.95mm | 6.1mm | Lead Free | 16 Weeks | No SVHC | 5 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | Single | 12 ns | 28 ns | 150A | 20V | 40V | 2V | 3.7W Ta 83W Tc | N-Channel | 3100pF @ 20V | 2m Ω @ 50A, 10V | 2V @ 250μA | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB14N30TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb14n30tm-datasheets-5918.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 4 Weeks | 1.31247g | No SVHC | 290MOhm | 2 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | not_compliant | e3 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 140W | 1 | FET General Purpose Power | Not Qualified | 20 ns | 105ns | 75 ns | 30 ns | 14A | 30V | 300V | SILICON | DRAIN | SWITCHING | 5V | 140W Tc | 56A | 330 mJ | 300V | N-Channel | 1060pF @ 25V | 5 V | 290m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| NVMFS6H824NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | /files/onsemiconductor-nvmfs6h824nt1g-datasheets-6205.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.8W Ta 115W Tc | N-Channel | 2470pF @ 40V | 4.5m Ω @ 20A, 10V | 4V @ 140μA | 19A Ta 103A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R5009ANX | ROHM Semiconductor | $0.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 Full Pack | 10.3mm | 15.4mm | 4.8mm | Lead Free | 3 | 12 Weeks | 3 | yes | 260 | 3 | Single | 10 | 1 | FET General Purpose Power | Not Qualified | 30 ns | 62 ns | 9A | 30V | SILICON | SWITCHING | 500V | 500V | 50W Tc | TO-220AB | 9A | 0.72Ohm | 5.4 mJ | N-Channel | 650pF @ 25V | 720m Ω @ 4.5A, 10V | 4.5V @ 1mA | 9A Tc | 21nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| TPH1R403NL,L1Q | Toshiba Semiconductor and Storage | $1.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 850.995985mg | 8 | No | 1 | Single | 8-SOP Advance (5x5) | 4.4nF | 16 ns | 5.6ns | 8.9 ns | 50 ns | 60A | 20V | 30V | 1.6W Ta 64W Tc | 1.4mOhm | 30V | N-Channel | 4400pF @ 15V | 1.4mOhm @ 30A, 10V | 2.3V @ 500μA | 60A Ta | 46nC @ 10V | 1.4 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9628-100A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk9628100a118-datasheets-5813.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 166W | 1 | R-PSSO-G2 | 11 ns | 58ns | 106 ns | 250 ns | 49A | 10V | 100V | SILICON | DRAIN | SWITCHING | 166W Tc | 0.028Ohm | 45 mJ | 100V | N-Channel | 4293pF @ 25V | 27m Ω @ 25A, 10V | 2V @ 1mA | 49A Tc | 5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| RJK0305DPB-02#J0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/renesaselectronicsamerica-rjk0305dpb02j0-datasheets-5906.pdf | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | Gold | 45W | SINGLE | GULL WING | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | R-PSSO-G4 | 7 ns | 3ns | 3 ns | 35 ns | 30A | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 120A | 0.013Ohm | N-Channel | 1250pF @ 10V | 8m Ω @ 15A, 10V | 30A Ta | 8nC @ 4.5V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQR70090ELR_GE3 | Vishay Siliconix | $2.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqr70090elrge3-datasheets-5889.pdf | TO-252-4, DPak (3 Leads + Tab) | 3 | 12 Weeks | unknown | YES | SINGLE | GULL WING | 1 | R-PSSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 136W Tc | 86A | 150A | 0.0087Ohm | 101 mJ | N-Channel | 3500pF @ 25V | 8.7m Ω @ 25A, 10V | 2.5V @ 250μA | 86A Tc | 65nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4477DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4477dyt1ge3-datasheets-5940.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 8 | EAR99 | Tin | No | DUAL | GULL WING | 8 | 1 | 3W | 1 | 42 ns | 42ns | 42 ns | 100 ns | -26.6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | -1.5V | 3W Ta 6.6W Tc | 0.0062Ohm | -20V | P-Channel | 4600pF @ 10V | 6.2m Ω @ 18A, 4.5V | 1.5V @ 250μA | 26.6A Tc | 190nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| IRFR1N60ATRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihfr1n60age3-datasheets-4566.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 7Ohm | 3 | Tin | No | 1 | Single | 36W | 1 | D-Pak | 229pF | 9.8 ns | 14ns | 20 ns | 18 ns | 1.4A | 30V | 600V | 36W Tc | 7Ohm | N-Channel | 229pF @ 25V | 7Ohm @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 14nC @ 10V | 7 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| FCD360N65S3R0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fcd360n65s3r0-datasheets-6002.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 83W Tc | TO-252AA | 10A | 25A | 0.36Ohm | 40 mJ | N-Channel | 730pF @ 400V | 360m Ω @ 5A, 10V | 4.5V @ 1mA | 10A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOW11N60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | TO-262 | 1.99nF | 11A | 600V | 272W Tc | N-Channel | 1990pF @ 25V | 700mOhm @ 5.5A, 10V | 4.5V @ 250μA | 11A Tc | 37nC @ 10V | 700 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB12P20TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqb12p20tm-datasheets-6014.pdf | -200V | -11.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 7 Weeks | 1.31247g | No SVHC | 470mOhm | 3 | ACTIVE (Last Updated: 15 hours ago) | yes | EAR99 | FAST SWITCHING | Tin | No | e3 | GULL WING | Single | 3.13W | 1 | Other Transistors | R-PSSO-G2 | 20 ns | 195ns | 60 ns | 40 ns | 11.5mA | 30V | SILICON | DRAIN | SWITCHING | 200V | -5V | 3.13W Ta 120W Tc | 46A | -200V | P-Channel | 1200pF @ 25V | 5 V | 470m Ω @ 5.75A, 10V | 5V @ 250μA | 11.5A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| FQPF2N70 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf2n70-datasheets-6056.pdf | 700V | 2A | TO-220-3 Full Pack | Lead Free | 3 | 5 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 28W | 1 | FET General Purpose Power | 80ns | 70 ns | 50 ns | 2A | 30V | SILICON | ISOLATED | SWITCHING | 28W Tc | TO-220AB | 2A | 8A | 700V | N-Channel | 350pF @ 25V | 6.3 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIJ420DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sij420dpt1ge3-datasheets-6040.pdf | PowerPAK® SO-8 | 4 | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 8 | 1 | 40 | 4.8W | 1 | R-PSSO-G4 | 29 ns | 16ns | 13 ns | 40 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.2V | 4.8W Ta 62.5W Tc | 32A | 0.0026Ohm | 45 mJ | N-Channel | 3630pF @ 10V | 1.2 V | 2.6m Ω @ 15A, 10V | 2.4V @ 250μA | 50A Tc | 90nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BUK7606-55B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk760655b118-datasheets-6068.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 300W | 1 | R-PSSO-G2 | 30 ns | 115ns | 110 ns | 155 ns | 75A | 20V | 55V | SILICON | DRAIN | SWITCHING | 254W Tc | 145A | 582A | 0.006Ohm | 680 mJ | 55V | N-Channel | 5100pF @ 25V | 6m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 64nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI4166DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4166dyt1ge3-datasheets-6071.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 3.9MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 30 | 3W | 1 | 30 ns | 19ns | 15 ns | 35 ns | 20.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.2V | 3W Ta 6.5W Tc | 30V | N-Channel | 2730pF @ 15V | 3.9m Ω @ 15A, 10V | 2.4V @ 250μA | 30.5A Tc | 65nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STD95N4F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std95n4f3-datasheets-5947.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 5.8MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD95 | 3 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 50ns | 15 ns | 40 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | 400 mJ | 40V | N-Channel | 2200pF @ 25V | 6.5m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 54nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STD5NK50ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp5nk50zfp-datasheets-8885.pdf | 500V | 4.4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 12 Weeks | No SVHC | 1.5Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | GULL WING | 260 | STD5N | 3 | Single | 30 | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 10ns | 15 ns | 32 ns | 4.4A | 30V | SILICON | SWITCHING | 3.75V | 70W Tc | TO-252AA | 500V | N-Channel | 535pF @ 25V | 1.5 Ω @ 2.2A, 10V | 4.5V @ 50μA | 4.4A Tc | 28nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| STB4NK60ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std4nk60zt4-datasheets-6401.pdf | 600V | 4A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 12 Weeks | No SVHC | 2Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB4N | 3 | Single | 30 | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 9.5ns | 16.5 ns | 29 ns | 2A | 30V | 600V | SILICON | SWITCHING | 3.75V | 70W Tc | 4A | 600V | N-Channel | 510pF @ 25V | 3.75 V | 2 Ω @ 2A, 10V | 4.5V @ 50μA | 4A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IRFR110TRLPBF | Vishay Siliconix | $5.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr110trpbf-datasheets-0113.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 4.3A | 20V | 100V | 25W Tc | 540mOhm | N-Channel | 180pF @ 25V | 540mOhm @ 2.6A, 10V | 4V @ 250μA | 4.3A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V |
