Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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SQJ409EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj409ept1ge3-datasheets-5187.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 68W | 1 | 175°C | R-PSSO-G4 | 23 ns | 75 ns | -60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 68W Tc | 0.007Ohm | 84 mJ | -40V | P-Channel | 11000pF @ 25V | 7m Ω @ 10A, 10V | 2.5V @ 250μA | 60A Tc | 260nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
SIR494DP-T1-GE3 | Vishay Siliconix | $6.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir494dpt1ge3-datasheets-5105.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | No | 1 | PowerPAK® SO-8 | 6.9nF | 42 ns | 60ns | 54 ns | 54 ns | 60A | 20V | 12V | 6.25W Ta 104W Tc | 1mOhm | 12V | N-Channel | 6900pF @ 6V | 1.2mOhm @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 150nC @ 10V | 1.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
FQB50N06TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqb50n06tm-datasheets-5303.pdf | 60V | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 4 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 105ns | 65 ns | 60 ns | 50A | 25V | SILICON | DRAIN | SWITCHING | 3.75W Ta 120W Tc | 200A | 0.022Ohm | 490 mJ | 60V | N-Channel | 1540pF @ 25V | 22m Ω @ 25A, 10V | 4V @ 250μA | 50A Tc | 41nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
BUK7628-100A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk7628100a118-datasheets-5264.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 166W | 1 | R-PSSO-G2 | 15 ns | 70ns | 45 ns | 83 ns | 47A | 20V | 100V | SILICON | DRAIN | SWITCHING | 166W Tc | 187A | 0.028Ohm | 45 mJ | 100V | N-Channel | 3100pF @ 25V | 28m Ω @ 25A, 10V | 4V @ 1mA | 47A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
FQB50N06LTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqb50n06ltm-datasheets-5194.pdf | 60V | 52.4A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 7 Weeks | 1.31247g | No SVHC | 3 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | Tin | not_compliant | e3 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 3.75W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 20 ns | 380ns | 145 ns | 80 ns | 52.4A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 3.75W Ta 121W Tc | 0.025Ohm | 990 mJ | 60V | N-Channel | 1630pF @ 25V | 21m Ω @ 26.2A, 10V | 2.5V @ 250μA | 52.4A Tc | 32nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||
IPU60R600C6BKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipu60r600c6bkma1-datasheets-5370.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.41mm | 3 | 3 | no | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 63W | 1 | 12 ns | 9ns | 13 ns | 80 ns | 7.3A | 20V | SILICON | SWITCHING | 600V | 63W Tc | 0.6Ohm | 650V | N-Channel | 440pF @ 100V | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 7.3A Tc | 20.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IPI100N06S3L04XK | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi100n06s3l04xk-datasheets-5374.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | PG-TO262-3 | 17.27nF | 100A | 55V | 214W Tc | N-Channel | 17270pF @ 25V | 3.8mOhm @ 80A, 10V | 2.2V @ 150μA | 100A Tc | 362nC @ 10V | 3.8 mΩ | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AON6452 | Alpha & Omega Semiconductor Inc. | $0.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | 8-PowerSMD, Flat Leads | 18 Weeks | 8 | 35W | 1 | 26A | 25V | 100V | 2W Ta 35W Tc | N-Channel | 2200pF @ 50V | 25m Ω @ 20A, 10V | 4V @ 250μA | 6.5A Ta 26A Tc | 34nC @ 10V | 7V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FQB19N20CTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fqb19n20ctm-datasheets-5405.pdf | 200V | 19A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 5 Weeks | 1.31247g | 170mOhm | 3 | ACTIVE (Last Updated: 16 hours ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | Single | 3.13W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 150ns | 115 ns | 135 ns | 19A | 30V | SILICON | DRAIN | SWITCHING | 3.13W Ta 139W Tc | 76A | 200V | N-Channel | 1080pF @ 25V | 170m Ω @ 9.5A, 10V | 4V @ 250μA | 19A Tc | 53nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
RSD100N10TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-2sa1774ebtlr-datasheets-4143.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | 3 | EAR99 | No | e2 | Tin/Copper (Sn98Cu2) | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 10 ns | 17ns | 20 ns | 50 ns | 10A | 20V | SILICON | SWITCHING | 20W Tc | 20A | 100V | N-Channel | 700pF @ 25V | 133m Ω @ 5A, 10V | 2.5V @ 1mA | 10A Ta | 18nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
2SK3043 | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/panasonicelectroniccomponents-2sk3043-datasheets-5185.pdf | 450V | 5A | TO-220-3 Full Pack | 3 | no | unknown | 8541.29.00.95 | e6 | Tin/Bismuth (Sn/Bi) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 45ns | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2W Ta 35W Tc | TO-220AB | 5A | 10A | 100 mJ | N-Channel | 700pF @ 20V | 1.3 Ω @ 3A, 10V | 5V @ 1mA | 5A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
STD28P3LLH6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ H6 | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std28p3llh6ag-datasheets-4750.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STD28P3 | NOT SPECIFIED | 12A | 30V | 33W Tc | P-Channel | 1480pF @ 25V | 30m Ω @ 6A, 10V | 2.5V @ 250μA | 12A Tc | 29nC @ 10V | 4.5V 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMTH4004SPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth4004sps13-datasheets-5237.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 40V | 3.6W Ta 167W Tc | N-Channel | 4305pF @ 25V | 2.7m Ω @ 90A, 10V | 4V @ 250μA | 31A Ta 100A Tc | 68.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7121DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7121dnt1ge3-datasheets-5243.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | No SVHC | 18mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 44 ns | 100ns | 15 ns | 28 ns | -16A | 25V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | -3V | 3.7W Ta 52W Tc | 50A | 20 mJ | -30V | P-Channel | 1960pF @ 15V | -3 V | 18m Ω @ 10A, 10V | 3V @ 250μA | 16A Tc | 65nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||
TSM7NC60CF C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm7nc65cfc0g-datasheets-7781.pdf | TO-220-3 Full Pack | 3 | 20 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 44.6W Tc | TO-220AB | 7A | 21A | 270 mJ | N-Channel | 1169pF @ 50V | 1.2 Ω @ 2A, 10V | 4.5V @ 250μA | 7A Tc | 24nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
R6004ENJTL | ROHM Semiconductor | $1.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | No SVHC | 83 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 4V | 40W Tc | 4A | 8A | 0.98Ohm | 46 mJ | N-Channel | 250pF @ 25V | 980m Ω @ 1.5A, 10V | 4V @ 1mA | 4A Tc | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
STD6N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std6n60m2-datasheets-5059.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 16 Weeks | 1.2Ohm | 3 | EAR99 | No | STD6N | 1 | Single | 9.5 ns | 7.4ns | 22.5 ns | 24 ns | 4.5A | 25V | 60W Tc | 600V | N-Channel | 232pF @ 100V | 1.2 Ω @ 2.25A, 10V | 4V @ 250μA | 4.5A Tc | 8nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4186DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4186dyt1ge3-datasheets-5077.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 540.001716mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3W | 1 | 29 ns | 16ns | 13 ns | 40 ns | 35.8A | 20V | SILICON | SWITCHING | 3W Ta 6W Tc | 25.3A | 0.0026Ohm | 20V | N-Channel | 3630pF @ 10V | 2.4 V | 2.6m Ω @ 15A, 10V | 2.4V @ 250μA | 35.8A Tc | 90nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
AOTF11N60L | Alpha & Omega Semiconductor Inc. | $1.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 11A | 600V | 37.9W Tc | N-Channel | 1990pF @ 25V | 650m Ω @ 5.5A, 10V | 4.5V @ 250μA | 11A Tc | 37nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FQB7P20TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqb7p20tm-datasheets-5087.pdf | -200V | -7.3A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 4 Weeks | 1.31247g | 690MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 3.13W | 1 | Other Transistors | R-PSSO-G2 | 15 ns | 110ns | 42 ns | 30 ns | 7.3A | 30V | SILICON | DRAIN | SWITCHING | 200V | 3.13W Ta 90W Tc | 29.2A | 570 mJ | -200V | P-Channel | 770pF @ 25V | 690m Ω @ 3.65A, 10V | 5V @ 250μA | 7.3A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
EKI04036 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | /files/sanken-eki04036-datasheets-5109.pdf | TO-220-3 | Lead Free | 12 Weeks | yes | unknown | NOT SPECIFIED | NOT SPECIFIED | 80A | 40V | 116W Tc | N-Channel | 3910pF @ 25V | 3.8m Ω @ 58.5A, 10V | 2.5V @ 1mA | 80A Tc | 63.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIRA06DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira06dpt1ge3-datasheets-5133.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | Lead Free | 14 Weeks | 506.605978mg | Unknown | 2.5mOhm | 8 | EAR99 | Tin | No | 260 | 1 | Single | 30 | 5W | 24 ns | 20 ns | 30 ns | 40A | 20V | 1.1V | 5W Ta 62.5W Tc | 30V | N-Channel | 3595pF @ 15V | 2.5m Ω @ 15A, 10V | 2.2V @ 250μA | 40A Tc | 77nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||
IRFR120TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfu120pbf-datasheets-9324.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 270mOhm | 3 | yes | EAR99 | AVALANCHE RATED | Tin | No | 77A | 100V | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | R-PSSO-G2 | 6.8 ns | 27ns | 17 ns | 18 ns | 7.7A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | TO-252AA | 100V | N-Channel | 360pF @ 25V | 2 V | 270m Ω @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
FDS4675 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds4675-datasheets-5069.pdf | -40V | -11A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.9mm | Lead Free | 8 | 12 Weeks | 130mg | No SVHC | 13MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 2.4W | 1 | Other Transistors | 175°C | 20 ns | 29ns | 60 ns | 95 ns | -11A | 20V | -40V | SILICON | SWITCHING | 40V | -1.4V | 2.4W Ta | 50A | -40V | P-Channel | 4350pF @ 20V | -1.4 V | 13m Ω @ 11A, 10V | 3V @ 250μA | 11A Ta | 56nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
R5005CNX | ROHM Semiconductor | $21.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | TO-220-3 Full Pack | Lead Free | 3 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 40W Tc | TO-220AB | 5A | 20A | 1.6 mJ | N-Channel | 320pF @ 25V | 1.6 Ω @ 2.5A, 10V | 4.5V @ 1mA | 5A Tc | 10.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK7E8R3-40E,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk7e8r340e127-datasheets-5006.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | NO | SINGLE | 3 | 1 | 11 ns | 9ns | 9 ns | 21 ns | 75A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 96W Tc | 0.0074Ohm | 44 mJ | N-Channel | 1730pF @ 25V | 7.4m Ω @ 20A, 10V | 4V @ 1mA | 75A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
RD3L050SNTL1 | ROHM Semiconductor | $1.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 15W Tc | 5A | 15A | 0.14Ohm | N-Channel | 290pF @ 10V | 109m Ω @ 5A, 10V | 3V @ 1mA | 5A Ta | 8nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK7608-40B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/nexperiausainc-buk760840b118-datasheets-4872.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 245 | 3 | Single | 30 | 157W | 1 | R-PSSO-G2 | 20 ns | 51ns | 33 ns | 51 ns | 101A | 20V | 40V | SILICON | DRAIN | SWITCHING | 157W Tc | 407A | 0.008Ohm | 40V | N-Channel | 2689pF @ 25V | 8m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
SQJA90EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja90ept1ge3-datasheets-4914.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 1 | 68W | 1 | 175°C | R-PSSO-G4 | 16 ns | 26 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W Tc | 0.0076Ohm | 57 mJ | 80V | N-Channel | 3500pF @ 25V | 7.6m Ω @ 10A, 10V | 3.5V @ 250μA | 60A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
DMP3008SFGQ-7 | Diodes Incorporated | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp3008sfgq13-datasheets-0062.pdf | 8-PowerVDFN | 15 Weeks | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 8.6A | 30V | 900mW Ta | P-Channel | 2230pF @ 15V | 17m Ω @ 10A, 10V | 2.1V @ 250μA | 8.6A Ta | 47nC @ 10V | 4.5V 10V | ±20V |
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