Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RQ5C060BCTCL | ROHM Semiconductor | $0.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | SC-96 | 3 | 20 Weeks | EAR99 | not_compliant | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1W Tc | 6A | 0.0269Ohm | P-Channel | 1360pF @ 10V | 21.1m Ω @ 6A, 4.5V | 1.2V @ 1mA | 6A Ta | 19.2nC @ 4.5V | 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M43-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m43100ex-datasheets-2176.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 25A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 80W Tc | 26A | 103A | 0.044Ohm | 42.7 mJ | N-Channel | 2309pF @ 25V | 43m Ω @ 5A, 10V | 2.1V @ 1mA | 25A Tc | 20.2nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| FDD4243 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdd4243-datasheets-2183.pdf | -40V | -14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 44MOhm | 3 | ACTIVE (Last Updated: 6 hours ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 42W | 1 | Other Transistors | Not Qualified | R-XSSO-G2 | 6 ns | 15ns | 7 ns | 22 ns | -6.7A | 20V | -40V | SILICON | 40V | -1.6V | 42W Tc | 60A | 84 mJ | -40V | P-Channel | 1550pF @ 20V | -1.6 V | 44m Ω @ 6.7A, 10V | 3V @ 250μA | 6.7A Ta 14A Tc | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||
| GKI07301 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-gki07301-datasheets-2200.pdf | 8-PowerTDFN | Lead Free | 12 Weeks | 8 | NOT SPECIFIED | NOT SPECIFIED | 6A | 75V | 3.1W Ta 46W Tc | N-Channel | 1580pF @ 25V | 23.2m Ω @ 12.4A, 10V | 2.5V @ 350μA | 6A Ta | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA70EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja70ept1ge3-datasheets-2212.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 27W Tc | 14.7A | 18A | 0.208Ohm | 5 mJ | N-Channel | 220pF @ 25V | 95m Ω @ 4A, 10V | 3.5V @ 250μA | 14.7A Tc | 7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHG052N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg052n60efge3-datasheets-2023.pdf | TO-247-3 | TO-247AC | 600V | 278W Tc | N-Channel | 3380pF @ 100V | 52mOhm @ 23A, 10V | 5V @ 250μA | 48A Tc | 101nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW35N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-247-3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | compliant | NOT SPECIFIED | STW35N | NOT SPECIFIED | 600V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG21N80AE-GE3 | Vishay Siliconix | $3.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg21n80aege3-datasheets-2080.pdf | TO-247-3 | 14 Weeks | TO-247AC | 800V | 32W Tc | N-Channel | 1388pF @ 100V | 235mOhm @ 11A, 10V | 4V @ 250μA | 17.4A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA20N95DK5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DK5 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stwa20n95dk5-datasheets-2083.pdf | TO-247-3 | 17 Weeks | compliant | 950V | 250W Tc | N-Channel | 1600pF @ 100V | 330m Ω @ 9A, 10V | 5V @ 100μA | 18A Tc | 50.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH070N60EF-T1GE3 | Vishay Siliconix | $6.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh070n60eft1ge3-datasheets-2019.pdf | 8-PowerTDFN | 14 Weeks | PowerPAK® 8 x 8 | 600V | 202W Tc | N-Channel | 2647pF @ 100V | 71mOhm @ 15A, 10V | 5V @ 250μA | 36A Tc | 75nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI076N15N5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi076n15n5aksa1-datasheets-2084.pdf | 3 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 150V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 112A | 448A | 0.0076Ohm | 130 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB46N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb46n60m6-datasheets-2048.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | compliant | 600V | 250W Tc | N-Channel | 2340pF @ 100V | 80m Ω @ 18A, 10V | 4.75V @ 250μA | 36A Tc | 53.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J771G,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | 6-UFBGA, WLCSP | 12 Weeks | 6 | No | 5W | 90 ns | 5A | 12V | 20V | 1.2W Ta | -20V | P-Channel | 870pF @ 10V | 31m Ω @ 3A, 8.5V | 1.2V @ 1mA | 5A Ta | 9.8nC @ 4.5V | 2.5V 8.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA50N65DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-247-3 | 17 Weeks | compliant | NOT SPECIFIED | STWA50 | NOT SPECIFIED | 650V | 300W Tc | N-Channel | 3200pF @ 100V | 87m Ω @ 19A, 10V | 5V @ 250μA | 38A Tc | 69nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMLDM8120 TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmldm8120gtrpbfree-datasheets-5785.pdf | SOT-563, SOT-666 | 6 | 21 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | 6 | 10 | 1 | Other Transistors | Not Qualified | R-PDSO-F6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 150mW Ta | 0.86A | 0.15Ohm | P-Channel | 200pF @ 16V | 150m Ω @ 950mA, 4.5V | 1V @ 250μA | 860mA Ta | 3.56nC @ 4.5V | 1.8V 4.5V | 8V | |||||||||||||||||||||||||||||||||||||||||||
| FQAF13N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqaf13n80-datasheets-2050.pdf | 800V | 8A | TO-3P-3 Full Pack | 15.7mm | 16.7mm | 5.7mm | Lead Free | 3 | 4 Weeks | 6.962g | 750mOhm | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 120W | 1 | FET General Purpose Power | 60 ns | 150ns | 110 ns | 155 ns | 8A | 30V | SILICON | ISOLATED | SWITCHING | 120W Tc | 8A | 800V | N-Channel | 3500pF @ 25V | 750m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 88nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| STFW8N120K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfw8n120k5-datasheets-2056.pdf | TO-3P-3 Full Pack | 12 Weeks | compliant | 1200V | 48W Tc | N-Channel | 505pF @ 100V | 2 Ω @ 2.5A, 10V | 5V @ 100μA | 6A Tc | 13.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSJPF20N65-BP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-msjpf20n65bp-datasheets-2057.pdf | TO-220-3 Full Pack | 650V | 31.3W Tc | N-Channel | 901pF @ 50V | 380m Ω @ 5.5A, 10V | 4V @ 250μA | 11A | 21nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA22N60EF-GE3 | Vishay Siliconix | $2.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha22n60efge3-datasheets-2059.pdf | TO-220-3 Full Pack | 17 Weeks | TO-220 Full Pack | 600V | 33W Tc | N-Channel | 1423pF @ 100V | 182mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSJW20N65-BP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW13N95K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf13n95k3-datasheets-9582.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | No SVHC | 850mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | STW13N | 3 | Single | 190W | 1 | FET General Purpose Power | 18 ns | 16ns | 21 ns | 50 ns | 10A | 30V | SILICON | SWITCHING | 4V | 190W Tc | 40A | 400 mJ | 950V | N-Channel | 1620pF @ 100V | 850m Ω @ 5A, 10V | 5V @ 100μA | 10A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| STP16NK65Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp16nk65z-datasheets-2065.pdf | 650V | 13A | TO-220-3 | 3 | AVALANCHE RATED | No | e3 | Tin (Sn) | STP16N | 3 | Single | 190W | 1 | FET General Purpose Power | R-PSFM-T3 | 25 ns | 25ns | 17 ns | 68 ns | 13A | 30V | SILICON | SWITCHING | 190W Tc | TO-220AB | 52A | 0.5Ohm | 350 mJ | 650V | N-Channel | 2750pF @ 25V | 500m Ω @ 6.5A, 10V | 4.5V @ 100μA | 13A Tc | 89nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| UJ3C065080B3 | UnitedSiC | $5.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uj3c065080b3-datasheets-2021.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 650V | 115W Tc | N-Channel | 1500pF @ 100V | 111m Ω @ 20A, 12V | 6V @ 10mA | 25A Tc | 51nC @ 15V | 12V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH18N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh18n60p-datasheets-2073.pdf | 600V | 18A | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 21 ns | 22ns | 22 ns | 62 ns | 18A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-247AD | 45A | 0.4Ohm | 1000 mJ | 600V | N-Channel | 2500pF @ 25V | 400m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 18A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| STI11NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb11nm80t4-datasheets-4117.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | NRND (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | SINGLE | STI11N | 3 | 150W | 1 | FET General Purpose Power | 22 ns | 17ns | 15 ns | 46 ns | 11A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150W Tc | 44A | 0.4Ohm | 400 mJ | 800V | N-Channel | 1630pF @ 25V | 400m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 43.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STFW38N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stfw38n65m5-datasheets-2042.pdf | ISOWATT218FX | 15.7mm | 26.7mm | 5.7mm | 3 | 12 Weeks | 6.961991g | 3 | EAR99 | ULTRA LOW RESISTANCE | NOT SPECIFIED | STFW | 1 | Single | NOT SPECIFIED | 1 | 9ns | 9 ns | 30A | 25V | SILICON | ISOLATED | SWITCHING | 57W Tc | 0.095Ohm | 660 mJ | 650V | N-Channel | 3000pF @ 100V | 95m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 71nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| IPT60R040S7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™S7 | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerSFN | 18 Weeks | 600V | 245W Tc | N-Channel | 3127pF @ 300V | 40m Ω @ 13A, 12V | 4.5V @ 790μA | 13A Tc | 83nC @ 12V | 12V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF130N10F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp130n10f3-datasheets-6199.pdf | TO-220-3 Full Pack | Lead Free | 3 | 9.6MOhm | 3 | EAR99 | ULTRA LOW RESISTANCE | No | SINGLE | STF13 | 35W | 1 | FET General Purpose Powers | 17 ns | 38ns | 7.2 ns | 52 ns | 46A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 35W Tc | TO-220AB | 184A | 125 mJ | 100V | N-Channel | 3305pF @ 25V | 9.6m Ω @ 23A, 10V | 4V @ 250μA | 46A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STWA40N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 16 Weeks | ACTIVE (Last Updated: 2 weeks ago) | NOT SPECIFIED | STWA40 | NOT SPECIFIED | 600V | N-Channel | 34A | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48RSPBF | Vishay Siliconix | $1.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz48rspbf-datasheets-1989.pdf | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 8 Weeks | 1.437803g | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | GULL WING | 260 | 4 | 1 | Single | 40 | 190W | 1 | R-PSSO-G2 | 8.1 ns | 250ns | 250 ns | 210 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 190W Tc | 290A | 60V | N-Channel | 2400pF @ 25V | 18m Ω @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 10V | ±20V |
