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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STS12N3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sts12n3llh5-datasheets-2217.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | STS12 | 8 | 2.7W | 1 | FET General Purpose Power | 8.6 ns | 11.2ns | 6 ns | 32.4 ns | 12A | 22V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.7W Tc | 0.0097Ohm | N-Channel | 1290pF @ 25V | 7.5m Ω @ 6A, 10V | 1V @ 250μA | 12A Tc | 8nC @ 4.5V | 4.5V 10V | +22V, -20V | |||||||||||||||||||||||||||||||||||||||
| IPA60R125P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r125p6xksa1-datasheets-2313.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 14 ns | 9ns | 5 ns | 44 ns | 30A | 30V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 34W Tc | TO-220AB | 87A | 0.125Ohm | N-Channel | 2660pF @ 100V | 125m Ω @ 11.6A, 10V | 4.5V @ 960μA | 30A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDS8896 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fds8896-datasheets-2223.pdf | 30V | 15A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 6MOhm | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 8 ns | 37ns | 24 ns | 60 ns | 15A | 20V | SILICON | SWITCHING | 1.2V | 2.5W Ta | 30V | N-Channel | 2525pF @ 15V | 6m Ω @ 15A, 10V | 2.5V @ 250μA | 15A Ta | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIR484DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sir484dpt1ge3-datasheets-2155.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 15 Weeks | 506.605978mg | 8.3mOhm | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | R-XDSO-C5 | 15 ns | 12ns | 10 ns | 17 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3.9W Ta 29.8W Tc | 50A | 24 mJ | 20V | N-Channel | 830pF @ 10V | 8.3m Ω @ 17.2A, 10V | 2.5V @ 250μA | 20A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| ZXMN6A11GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-zxmn6a11gta-datasheets-2113.pdf | 60V | 2.4A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 120mOhm | no | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 3.9W | 1 | FET General Purpose Power | R-PDSO-G4 | 1.95 ns | 3.5ns | 4.6 ns | 8.2 ns | 4.4A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 3.8A | 60V | N-Channel | 330pF @ 40V | 120m Ω @ 2.5A, 10V | 3V @ 250μA | 3.1A Ta | 5.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| STFW8N120K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfw8n120k5-datasheets-2056.pdf | TO-3P-3 Full Pack | 12 Weeks | compliant | 1200V | 48W Tc | N-Channel | 505pF @ 100V | 2 Ω @ 2.5A, 10V | 5V @ 100μA | 6A Tc | 13.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSJPF20N65-BP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-msjpf20n65bp-datasheets-2057.pdf | TO-220-3 Full Pack | 650V | 31.3W Tc | N-Channel | 901pF @ 50V | 380m Ω @ 5.5A, 10V | 4V @ 250μA | 11A | 21nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA22N60EF-GE3 | Vishay Siliconix | $2.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha22n60efge3-datasheets-2059.pdf | TO-220-3 Full Pack | 17 Weeks | TO-220 Full Pack | 600V | 33W Tc | N-Channel | 1423pF @ 100V | 182mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSJW20N65-BP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW13N95K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf13n95k3-datasheets-9582.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | No SVHC | 850mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | STW13N | 3 | Single | 190W | 1 | FET General Purpose Power | 18 ns | 16ns | 21 ns | 50 ns | 10A | 30V | SILICON | SWITCHING | 4V | 190W Tc | 40A | 400 mJ | 950V | N-Channel | 1620pF @ 100V | 850m Ω @ 5A, 10V | 5V @ 100μA | 10A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STP16NK65Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp16nk65z-datasheets-2065.pdf | 650V | 13A | TO-220-3 | 3 | AVALANCHE RATED | No | e3 | Tin (Sn) | STP16N | 3 | Single | 190W | 1 | FET General Purpose Power | R-PSFM-T3 | 25 ns | 25ns | 17 ns | 68 ns | 13A | 30V | SILICON | SWITCHING | 190W Tc | TO-220AB | 52A | 0.5Ohm | 350 mJ | 650V | N-Channel | 2750pF @ 25V | 500m Ω @ 6.5A, 10V | 4.5V @ 100μA | 13A Tc | 89nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| UJ3C065080B3 | UnitedSiC | $5.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uj3c065080b3-datasheets-2021.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 650V | 115W Tc | N-Channel | 1500pF @ 100V | 111m Ω @ 20A, 12V | 6V @ 10mA | 25A Tc | 51nC @ 15V | 12V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH18N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh18n60p-datasheets-2073.pdf | 600V | 18A | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 21 ns | 22ns | 22 ns | 62 ns | 18A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-247AD | 45A | 0.4Ohm | 1000 mJ | 600V | N-Channel | 2500pF @ 25V | 400m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 18A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| SIHG052N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg052n60efge3-datasheets-2023.pdf | TO-247-3 | TO-247AC | 600V | 278W Tc | N-Channel | 3380pF @ 100V | 52mOhm @ 23A, 10V | 5V @ 250μA | 48A Tc | 101nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW35N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-247-3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | compliant | NOT SPECIFIED | STW35N | NOT SPECIFIED | 600V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG21N80AE-GE3 | Vishay Siliconix | $3.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg21n80aege3-datasheets-2080.pdf | TO-247-3 | 14 Weeks | TO-247AC | 800V | 32W Tc | N-Channel | 1388pF @ 100V | 235mOhm @ 11A, 10V | 4V @ 250μA | 17.4A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA20N95DK5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DK5 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stwa20n95dk5-datasheets-2083.pdf | TO-247-3 | 17 Weeks | compliant | 950V | 250W Tc | N-Channel | 1600pF @ 100V | 330m Ω @ 9A, 10V | 5V @ 100μA | 18A Tc | 50.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH070N60EF-T1GE3 | Vishay Siliconix | $6.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh070n60eft1ge3-datasheets-2019.pdf | 8-PowerTDFN | 14 Weeks | PowerPAK® 8 x 8 | 600V | 202W Tc | N-Channel | 2647pF @ 100V | 71mOhm @ 15A, 10V | 5V @ 250μA | 36A Tc | 75nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI076N15N5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi076n15n5aksa1-datasheets-2084.pdf | 3 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 150V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 112A | 448A | 0.0076Ohm | 130 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB46N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb46n60m6-datasheets-2048.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | compliant | 600V | 250W Tc | N-Channel | 2340pF @ 100V | 80m Ω @ 18A, 10V | 4.75V @ 250μA | 36A Tc | 53.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J771G,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | 6-UFBGA, WLCSP | 12 Weeks | 6 | No | 5W | 90 ns | 5A | 12V | 20V | 1.2W Ta | -20V | P-Channel | 870pF @ 10V | 31m Ω @ 3A, 8.5V | 1.2V @ 1mA | 5A Ta | 9.8nC @ 4.5V | 2.5V 8.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA50N65DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-247-3 | 17 Weeks | compliant | NOT SPECIFIED | STWA50 | NOT SPECIFIED | 650V | 300W Tc | N-Channel | 3200pF @ 100V | 87m Ω @ 19A, 10V | 5V @ 250μA | 38A Tc | 69nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMLDM8120 TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmldm8120gtrpbfree-datasheets-5785.pdf | SOT-563, SOT-666 | 6 | 21 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | 6 | 10 | 1 | Other Transistors | Not Qualified | R-PDSO-F6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 150mW Ta | 0.86A | 0.15Ohm | P-Channel | 200pF @ 16V | 150m Ω @ 950mA, 4.5V | 1V @ 250μA | 860mA Ta | 3.56nC @ 4.5V | 1.8V 4.5V | 8V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQAF13N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqaf13n80-datasheets-2050.pdf | 800V | 8A | TO-3P-3 Full Pack | 15.7mm | 16.7mm | 5.7mm | Lead Free | 3 | 4 Weeks | 6.962g | 750mOhm | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 120W | 1 | FET General Purpose Power | 60 ns | 150ns | 110 ns | 155 ns | 8A | 30V | SILICON | ISOLATED | SWITCHING | 120W Tc | 8A | 800V | N-Channel | 3500pF @ 25V | 750m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 88nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| STFU15N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | /files/stmicroelectronics-stfu15n80k5-datasheets-1999.pdf | TO-220-3 Full Pack | 27 Weeks | EAR99 | NOT SPECIFIED | STFU1 | NOT SPECIFIED | 14A | 800V | 35W Tc | N-Channel | 1100pF @ 100V | 375m Ω @ 7A, 10V | 5V @ 100μA | 14A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP19NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw19nm50n-datasheets-1928.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 250mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP19N | 3 | Single | 110W | 1 | FET General Purpose Power | 12 ns | 16ns | 17 ns | 61 ns | 14A | 25V | SILICON | SWITCHING | 3V | 110W Tc | TO-220AB | 56A | 208 mJ | 500V | N-Channel | 1000pF @ 50V | 250m Ω @ 7A, 10V | 4V @ 250μA | 14A Tc | 34nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| SIHP186N60EF-GE3 | Vishay Siliconix | $3.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp186n60efge3-datasheets-2015.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 156W Tc | N-Channel | 1081pF @ 100V | 193mOhm @ 9.5A, 10V | 5V @ 250μA | 18A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW40N60M2-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Surface Mount | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw40n60m2-datasheets-2538.pdf | TO-247-3 | 26 Weeks | STW40N | TO-247-3 | 2.5nF | 34A | 600V | 250W Tc | N-Channel | 2500pF @ 100V | 88mOhm @ 17A, 10V | 4V @ 250μA | 34A Tc | 57nC @ 10V | 88 mΩ | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA80N25X3TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 250V | 390W Tc | N-Channel | 5430pF @ 25V | 16m Ω @ 40A, 10V | 4.5V @ 1.5mA | 80A Tc | 83nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP17NK40Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp17nk40zfp-datasheets-6176.pdf | 400V | 15A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | STP17N | 3 | Single | 150W | 1 | FET General Purpose Power | 25 ns | 23ns | 13 ns | 55 ns | 7.5A | 30V | SILICON | SWITCHING | 3.75V | 150W Tc | TO-220AB | 60A | 0.25Ohm | 450 mJ | 400V | N-Channel | 1900pF @ 25V | 3.75 V | 250m Ω @ 7.5A, 10V | 4.5V @ 100μA | 15A Tc | 65nC @ 10V | 10V | ±30V |
