Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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STFU14N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfu14n80k5-datasheets-1670.pdf | TO-220-3 Full Pack | 27 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 800V | 30W Tc | N-Channel | 620pF @ 100V | 445m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 22nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STB20NM60T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp20nm60-datasheets-1689.pdf | 650V | 20A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 26 Weeks | 290mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB20N | 3 | Single | 30 | 192W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 20ns | 11 ns | 42 ns | 20A | 30V | SILICON | SWITCHING | 192W Tc | 80A | 650 mJ | 600V | N-Channel | 1500pF @ 25V | 290m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 54nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
STL28N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl28n60dm2-datasheets-1673.pdf | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | STL28 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP16N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu16n60m2-datasheets-5788.pdf | TO-220-3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | STP16N | FET General Purpose Power | 12A | Single | 600V | 110W Tc | N-Channel | 700pF @ 100V | 320m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 19nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
STW240N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 38 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STW240 | NOT SPECIFIED | 100V | 300W Tc | N-Channel | 11550pF @ 25V | 3m Ω @ 90A, 10V | 4.5V @ 250μA | 180A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP17N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp17n80k5-datasheets-1679.pdf | TO-220-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STP17N | 800V | 170W Tc | N-Channel | 866pF @ 100V | 340m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 26nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3566(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/toshiba-2sk3566sta4qm-datasheets-2291.pdf | TO-220-3 Full Pack | 52 Weeks | No SVHC | 3 | No | Single | 40W | TO-220SIS | 470pF | 60 ns | 20ns | 30 ns | 100 ns | 2.5A | 30V | 900V | 4V | 40W Tc | 5.6Ohm | 900V | N-Channel | 470pF @ 25V | 4 V | 6.4Ohm @ 1.5A, 10V | 4V @ 1mA | 2.5A Ta | 12nC @ 10V | 6.4 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
STW26N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp26n60m2-datasheets-1646.pdf | TO-247-3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | STW26N | 600V | 169W Tc | N-Channel | 1360pF @ 100V | 165m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 34nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHP690N60E-GE3 | Vishay Siliconix | $1.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp690n60ege3-datasheets-1638.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 62.5W Tc | N-Channel | 347pF @ 100V | 700mOhm @ 2A, 10V | 5V @ 250μA | 6.4A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STFW20N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi20n65m5-datasheets-6464.pdf | ISOWATT218FX | 12 Weeks | EAR99 | STFW | 650V | 48W Tc | N-Channel | 1434pF @ 100V | 190m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 36nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STH130N10F3-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp130n10f3-datasheets-6199.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 245 | STH130 | 30 | 250W | 1 | FET General Purpose Powers | R-PSSO-G2 | 17 ns | 38ns | 7.2 ns | 52 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | 450A | 100V | N-Channel | 3305pF @ 25V | 9.3m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
TK8A10K3,S5Q | Toshiba Semiconductor and Storage | $3.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk8a10k3s5q-datasheets-1643.pdf | TO-220-3 Full Pack | 52 Weeks | TO-220SIS | 530pF | 8A | 100V | 18W Tc | N-Channel | 530pF @ 10V | 120mOhm @ 4A, 10V | 4V @ 1mA | 8A Ta | 12.9nC @ 10V | 120 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STW26N65DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw26n65dm2-datasheets-1645.pdf | TO-247-3 | 17 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 650V | 170W Tc | N-Channel | 1480pF @ 100V | 190m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 35.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STW19NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw19nm60n-datasheets-1589.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | 16 Weeks | 3 | EAR99 | No | STW19N | Single | 12 ns | 15ns | 25 ns | 55 ns | 13A | 25V | 110W Tc | 600V | N-Channel | 1000pF @ 50V | 285m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 35nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
IXTP4N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-ixtp4n80p-datasheets-1592.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | 24ns | 29 ns | 60 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 100W Tc | TO-220AB | 8A | 250 mJ | 800V | N-Channel | 750pF @ 25V | 3.4 Ω @ 500mA, 10V | 5.5V @ 100μA | 3.6A Tc | 14.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
SIHD690N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd690n60ege3-datasheets-1596.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252AA) | 600V | 62.5W Tc | N-Channel | 347pF @ 100V | 700mOhm @ 2A, 10V | 5V @ 250μA | 6.4A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STB14N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb14n80k5-datasheets-1598.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 26 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STB14N | NOT SPECIFIED | 800V | 130W Tc | N-Channel | 620pF @ 100V | 445m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 22nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STW20N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 14 Weeks | OBSOLETE (Last Updated: 8 months ago) | NOT SPECIFIED | STW20N | NOT SPECIFIED | 600V | 110W Tc | N-Channel | 787pF @ 100V | 278m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 21.7nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STB24N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp24n65m2-datasheets-8063.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 26 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | STB24N | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 150W Tc | 64A | 0.23Ohm | 650 mJ | N-Channel | 1060pF @ 100V | 230m Ω @ 8A, 10V | 4V @ 250μA | 16A Tc | 29nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
SIHA690N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha690n60ege3-datasheets-1610.pdf | TO-220-3 Full Pack | 14 Weeks | TO-220 Full Pack | 600V | 29W Tc | N-Channel | 347pF @ 100V | 700mOhm @ 2A, 10V | 5V @ 250μA | 4.3A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MSJP11N65-BP | Micro Commercial Co | $2.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 650V | 78W Tc | N-Channel | 901pF @ 50V | 380m Ω @ 5.5A, 10V | 4V @ 250μA | 11A | 21nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STH240N10F7-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sth240n10f72-datasheets-1582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.7mm | Lead Free | 2 | 13 Weeks | EAR99 | ULTRA LOW RESISTANCE | SINGLE | GULL WING | NOT SPECIFIED | STH240 | 1 | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 49 ns | 110 ns | 180A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4.5V | 300W Tc | 720A | 0.0025Ohm | 500 mJ | 100V | N-Channel | 11550pF @ 25V | 2.5m Ω @ 60A, 10V | 4.5V @ 250μA | 180A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
STL28N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | 12 Weeks | ACTIVE (Last Updated: 7 months ago) | NOT SPECIFIED | STL28 | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STH270N4F3-6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sth270n4f32-datasheets-6825.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 15.25mm | 4.8mm | 10.4mm | Lead Free | 6 | 12 Weeks | No SVHC | 1.7MOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STH270 | 7 | Single | 300W | 1 | FET General Purpose Power | R-PSSO-G6 | 25 ns | 180ns | 45 ns | 110 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 2V | 300W Tc | 720A | 40V | N-Channel | 7400pF @ 25V | 1.7m Ω @ 80A, 10V | 4V @ 250μA | 180A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
AOB190A60L | Alpha & Omega Semiconductor Inc. | $0.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 208W Tc | N-Channel | 1935pF @ 100V | 190m Ω @ 7.6A, 10V | 4.6V @ 250μA | 20A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STB7NK80Z-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb7nk80zt4-datasheets-1247.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | STB7N | 3 | Single | 125W | 1 | FET General Purpose Power | 20 ns | 12ns | 20 ns | 45 ns | 5.2A | 30V | SILICON | SWITCHING | 125W Tc | 20.8A | 800V | N-Channel | 1138pF @ 25V | 1.8 Ω @ 2.6A, 10V | 4.5V @ 100μA | 5.2A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
STL24N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerVDFN | 12 Weeks | ACTIVE (Last Updated: 7 months ago) | NOT SPECIFIED | STL24 | NOT SPECIFIED | 650V | 125W Tc | N-Channel | 1060pF @ 100V | 250m Ω @ 7A, 10V | 4V @ 250μA | 14A Tc | 29nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP105N3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp105n3ll-datasheets-1566.pdf | TO-220-3 | 20 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | STP105 | 140W | FET General Purpose Powers | 19 ns | 91ns | 23.4 ns | 24.5 ns | 150A | 20V | Single | 140W Tc | 30V | N-Channel | 3100pF @ 25V | 3.5m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 42nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
STB22N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb22n60dm6-datasheets-1570.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 600V | 130W Tc | N-Channel | 800pF @ 100V | 240m Ω @ 7.5A, 10V | 4.75V @ 250μA | 15A Tc | 20.6nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STL160N3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl160n3llh6-datasheets-1571.pdf | 8-PowerVDFN | 4.75mm | 880μm | 5.75mm | Lead Free | 5 | 20 Weeks | No SVHC | 1.3MOhm | 5 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | DUAL | STL160 | 8 | 80W | 1 | FET General Purpose Power | 18.5 ns | 32ns | 54 ns | 107.5 ns | 160A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1V | 136W Tc | 900 mJ | 30V | N-Channel | 6375pF @ 25V | 1.3m Ω @ 17.5A, 10V | 1V @ 250μA | 160A Tc | 61.5nC @ 4.5V | 4.5V 10V | ±20V |
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