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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STU16N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti16n65m5-datasheets-6148.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | 3 | No SVHC | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | 260 | STU16N | 3 | Single | 90W | 1 | FET General Purpose Power | 25 ns | 9ns | 7 ns | 30 ns | 12A | 25V | SILICON | SWITCHING | 4V | 90W Tc | 48A | 0.279Ohm | 200 mJ | 650V | N-Channel | 1250pF @ 100V | 299m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 45nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| STI11NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb11nm80t4-datasheets-4117.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | NRND (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | SINGLE | STI11N | 3 | 150W | 1 | FET General Purpose Power | 22 ns | 17ns | 15 ns | 46 ns | 11A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150W Tc | 44A | 0.4Ohm | 400 mJ | 800V | N-Channel | 1630pF @ 25V | 400m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 43.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STFW38N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stfw38n65m5-datasheets-2042.pdf | ISOWATT218FX | 15.7mm | 26.7mm | 5.7mm | 3 | 12 Weeks | 6.961991g | 3 | EAR99 | ULTRA LOW RESISTANCE | NOT SPECIFIED | STFW | 1 | Single | NOT SPECIFIED | 1 | 9ns | 9 ns | 30A | 25V | SILICON | ISOLATED | SWITCHING | 57W Tc | 0.095Ohm | 660 mJ | 650V | N-Channel | 3000pF @ 100V | 95m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 71nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| IPT60R040S7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™S7 | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerSFN | 18 Weeks | 600V | 245W Tc | N-Channel | 3127pF @ 300V | 40m Ω @ 13A, 12V | 4.5V @ 790μA | 13A Tc | 83nC @ 12V | 12V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF130N10F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp130n10f3-datasheets-6199.pdf | TO-220-3 Full Pack | Lead Free | 3 | 9.6MOhm | 3 | EAR99 | ULTRA LOW RESISTANCE | No | SINGLE | STF13 | 35W | 1 | FET General Purpose Powers | 17 ns | 38ns | 7.2 ns | 52 ns | 46A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 35W Tc | TO-220AB | 184A | 125 mJ | 100V | N-Channel | 3305pF @ 25V | 9.6m Ω @ 23A, 10V | 4V @ 250μA | 46A Tc | 57nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STWA40N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 16 Weeks | ACTIVE (Last Updated: 2 weeks ago) | NOT SPECIFIED | STWA40 | NOT SPECIFIED | 600V | N-Channel | 34A | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48RSPBF | Vishay Siliconix | $1.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz48rspbf-datasheets-1989.pdf | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 8 Weeks | 1.437803g | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | GULL WING | 260 | 4 | 1 | Single | 40 | 190W | 1 | R-PSSO-G2 | 8.1 ns | 250ns | 250 ns | 210 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 190W Tc | 290A | 60V | N-Channel | 2400pF @ 25V | 18m Ω @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SIHP052N60EF-GE3 | Vishay Siliconix | $5.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp052n60efge3-datasheets-1984.pdf | TO-220-3 | TO-220AB | 600V | 278W Tc | N-Channel | 3380pF @ 100V | 52mOhm @ 23A, 10V | 5V @ 250μA | 48A Tc | 101nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH125N60EF-T1GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh125n60eft1ge3-datasheets-1962.pdf | 8-PowerTDFN | 14 Weeks | PowerPAK® 8 x 8 | 600V | 156W Tc | N-Channel | 1533pF @ 100V | 125mOhm @ 12A, 10V | 5V @ 250μA | 23A Tc | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n60efge3-datasheets-1996.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | D2PAK (TO-263) | 600V | 179W Tc | N-Channel | 1423pF @ 100V | 182mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFU15N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | /files/stmicroelectronics-stfu15n80k5-datasheets-1999.pdf | TO-220-3 Full Pack | 27 Weeks | EAR99 | NOT SPECIFIED | STFU1 | NOT SPECIFIED | 14A | 800V | 35W Tc | N-Channel | 1100pF @ 100V | 375m Ω @ 7A, 10V | 5V @ 100μA | 14A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW28N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp28n60m2-datasheets-1858.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 16 Weeks | 38.000013g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | STW28N | 1 | Single | 170W | 1 | 14.5 ns | 7.2ns | 8 ns | 100 ns | 24A | 25V | SILICON | SWITCHING | 170W Tc | 22A | 88A | 600V | N-Channel | 1370pF @ 100V | 150m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 37nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| STW18NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw18nm60n-datasheets-1964.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 16 Weeks | No SVHC | 285mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | STW18N | 3 | 80W | 1 | FET General Purpose Power | 12 ns | 15ns | 25 ns | 55 ns | 13A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 3V | 110W Tc | 52A | N-Channel | 1000pF @ 50V | 285m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 35nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||
| SIHG105N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg105n60efge3-datasheets-1831.pdf | TO-247-3 | TO-247AC | 600V | 208W Tc | N-Channel | 1804pF @ 100V | 102mOhm @ 13A, 10V | 5V @ 250μA | 29A Tc | 53nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP22N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp22n60efge3-datasheets-1971.pdf | TO-220-3 | 21 Weeks | TO-220AB | 600V | 179W Tc | N-Channel | 1423pF @ 100V | 182mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48PBF | Vishay Siliconix | $1.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfz48pbf-datasheets-1974.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 11 Weeks | 6.000006g | 3 | No | 1 | Single | 190W | 1 | TO-220AB | 2.4nF | 8.1 ns | 250ns | 250 ns | 210 ns | 50A | 20V | 60V | 190W Tc | 18mOhm | 60V | N-Channel | 2400pF @ 25V | 4 V | 18mOhm @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STW35N65DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw35n65dm2-datasheets-1980.pdf | TO-247-3 | 17 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 650V | 250W Tc | N-Channel | 2540pF @ 100V | 110m Ω @ 16A, 10V | 5V @ 250μA | 32A Tc | 56.3nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R120P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw60r120p7xksa1-datasheets-1981.pdf | TO-247-3 | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 95W Tc | 78A | 0.12Ohm | 82 mJ | N-Channel | 1544pF @ 400V | 120m Ω @ 8.2A, 10V | 4V @ 410μA | 26A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STF23NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF23 | 3 | Single | 35W | 1 | FET General Purpose Power | 21 ns | 45ns | 40 ns | 90 ns | 19.5A | 25V | SILICON | ISOLATED | SWITCHING | 4V | 35W Tc | TO-220AB | 78A | 700 mJ | 600V | N-Channel | 2050pF @ 50V | 180m Ω @ 10A, 10V | 5V @ 250μA | 19.5A Tc | 70nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| STWA35N65DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 17 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPA11N80C3XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spa11n80c3xksa1-datasheets-3925.pdf | TO-220-3 Isolated Tab | 3 | 18 Weeks | yes | EAR99 | AVALANCHE RATED | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 11A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 34W Tc | TO-220AB | 33A | 0.45Ohm | 470 mJ | N-Channel | 1600pF @ 100V | 450m Ω @ 7.1A, 10V | 3.9V @ 680μA | 11A Tc | 85nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| MSJP20N65-BP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP40012EL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup40012elge3-datasheets-1932.pdf | TO-220-3 | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 40V | 150W Tc | N-Channel | 10930pF @ 20V | 1.79m Ω @ 30A, 10V | 2.5V @ 250μA | 150A Tc | 195nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTBLS1D5N08MC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntbls1d5n08mc-datasheets-1979.pdf | 8-PowerSFN | yes | 80V | 2.9W Ta 250W Tc | N-Channel | 8170pF @ 40V | 1.53m Ω @ 80A, 10V | 4V @ 710μA | 32A Ta 298A Tc | 111nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMTS0D7N04CTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmts0d7n04ctxg-datasheets-1892.pdf | 8-PowerTDFN | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.9W Ta 273W Tc | N-Channel | 9281pF @ 25V | 0.67m Ω @ 50A, 10V | 4V @ 250μA | 51A Ta 430A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW75NF30AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-247-3 | 12 Weeks | STW75N | 300V | N-Channel | 60A | 180nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6012JNXC7G | ROHM Semiconductor | $4.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6012jnxc7g-datasheets-1948.pdf | TO-220-2 Full Pack | 8 Weeks | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 600V | 60W Tc | N-Channel | 900pF @ 100V | 390m Ω @ 6A, 15V | 7V @ 2.5mA | 12A Tc | 28nC @ 15V | 15V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL36N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Surface Mount | -55°C~150°C TJ | 3 (168 Hours) | MOSFET (Metal Oxide) | 8-PowerVDFN | 600V | 110W Tc | N-Channel | 940pF @ 100V | 215m Ω @ 7.5A, 10V | 4.75V @ 250μA | 15A Tc | 24nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP360N4F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 1.8mOhm | 3 | EAR99 | No | STP360 | 1 | Single | 300W | FET General Purpose Powers | 120A | 20V | 300W Tc | 40V | N-Channel | 17930pF @ 25V | 1.8m Ω @ 60A, 10V | 4.5V @ 250μA | 120A Tc | 340nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| R6524KNJTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6524knjtl-datasheets-1951.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 245W Tc | 24A | 72A | 0.185Ohm | 654 mJ | N-Channel | 1850pF @ 25V | 185m Ω @ 11.3A, 10V | 5V @ 750μA | 24A Tc | 45nC @ 10V | 10V | ±20V |
