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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFBE20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfbe20pbf-datasheets-1770.pdf | 800V | 1.8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 6.5Ohm | 3 | Tin | No | 1 | Single | 54W | 1 | TO-220AB | 530pF | 8.2 ns | 17ns | 27 ns | 58 ns | 1.8A | 20V | 800V | 4V | 54W Tc | 6.5Ohm | 800V | N-Channel | 530pF @ 25V | 4 V | 6.5Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 38nC @ 10V | 6.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||
| STH2N120K5-2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sth2n120k52ag-datasheets-1783.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 26 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 1200V | 60W Tc | N-Channel | 124pF @ 100V | 10 Ω @ 500mA, 10V | 4V @ 100μA | 1.5A Tc | 5.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB11NM60FDT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 600V | 11A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 450mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB11N | 3 | Single | 30 | 160W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 16ns | 15 ns | 11A | 30V | SWITCHING | 160W Tc | 44A | 600V | N-Channel | 900pF @ 25V | 450m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| BUK7S0R7-40HJ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7s0r740hj-datasheets-1726.pdf | SOT-1235 | 12 Weeks | 40V | 375W Ta | N-Channel | 15719pF @ 25V | 0.7m Ω @ 25A, 10V | 3.6V @ 1mA | 425A Ta | 202nC @ 10V | 10V | +20V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF34N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfi34n65m5-datasheets-6745.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 17 Weeks | 110MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STF34N | 30W | 1 | 59 ns | 59 ns | 28A | 25V | 35W Tc | 650V | N-Channel | 2590pF @ 100V | 110m Ω @ 14.5A, 10V | 5V @ 250μA | 28A Tc | 70nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTMTS001N06CLTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmts001n06cltxg-datasheets-1791.pdf | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 5W | N-Channel | 12300pF @ 25V | 0.81m Ω @ 50A, 10V | 2.2V @ 250μA | 398.2A | 165nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA32P05T | IXYS | $2.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp32p05t-datasheets-4440.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 39MOhm | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 83W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 32A | 15V | SILICON | DRAIN | SWITCHING | 50V | 83W Tc | 110A | 200 mJ | -50V | P-Channel | 1975pF @ 25V | 39m Ω @ 500mA, 10V | 4.5V @ 250μA | 32A Tc | 46nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||
| STF22N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 16 Weeks | compliant | 600V | 30W Tc | N-Channel | 800pF @ 100V | 230m Ω @ 7.5A, 10V | 4.75V @ 250μA | 15A Tc | 20nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB31N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfi31n65m5-datasheets-6407.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 17 Weeks | 148mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STB31N | Single | 150W | 1 | FET General Purpose Powers | 46 ns | 46 ns | 22A | 25V | 150W Tc | 650V | N-Channel | 1865pF @ 100V | 148m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 45nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| STL26NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl26nm60n-datasheets-1681.pdf | 8-PowerVDFN | Lead Free | 5 | 12 Weeks | No SVHC | 185MOhm | 5 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | DUAL | STL26 | 5 | 3W | 1 | 13 ns | 25ns | 50 ns | 85 ns | 19A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 125mW Ta 3W Tc | 2.7A | 400 mJ | 600V | N-Channel | 1800pF @ 50V | 185m Ω @ 10A, 10V | 5V @ 250μA | 2.7A Ta 19A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STH272N6F7-6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sth272n6f76ag-datasheets-1742.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | ACTIVE (Last Updated: 8 months ago) | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | STH272 | NOT SPECIFIED | 1 | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 333W Tc | 180A | 720A | 0.0015Ohm | 1900 mJ | N-Channel | 11000pF @ 25V | 1.5m Ω @ 90A, 10V | 4V @ 250μA | 180A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STP7NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std7nm80-datasheets-2102.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 1.05Ohm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STP7N | 3 | Single | 90W | 1 | FET General Purpose Power | 20 ns | 8ns | 10 ns | 35 ns | 3.25A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 90W Tc | TO-220AB | 6.5A | 26A | 240 mJ | 800V | N-Channel | 620pF @ 25V | 1.05 Ω @ 3.25A, 10V | 5V @ 250μA | 6.5A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| STI24N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp24n60m2-datasheets-1626.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 9.35mm | 4.6mm | 3 | 16 Weeks | 3 | EAR99 | No | STI24N | Single | 1 | 14 ns | 9ns | 15 ns | 60 ns | 18A | 25V | SILICON | DRAIN | SWITCHING | 150W Tc | 72A | 0.19Ohm | 180 mJ | 600V | N-Channel | 1060pF @ 100V | 190m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| IPP60R360CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Through Hole | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r360cfd7xksa1-datasheets-1712.pdf | TO-220-3 | 18 Weeks | 600V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP410N4F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP410 | NOT SPECIFIED | 40V | 365W Tc | N-Channel | 180A Tc | 4.5V 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB105N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb105n60efge3-datasheets-1717.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263) | 600V | 208W Tc | N-Channel | 1804pF @ 100V | 102mOhm @ 13A, 10V | 5V @ 250μA | 29A Tc | 53nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFW24NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | ROHS3 Compliant | 37 Weeks | STFW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI300N4F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti300n4f6-datasheets-1719.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 9.35mm | 4.6mm | Lead Free | 3 | 20 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STI300N | 3 | Single | 1 | FET General Purpose Power | 28 ns | 98ns | 95 ns | 190 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 640A | 0.002Ohm | 40V | N-Channel | 13800pF @ 25V | 2.2m Ω @ 80A, 10V | 4V @ 250μA | 160A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIHP24N80AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp24n80aege3-datasheets-1648.pdf | TO-220-3 | TO-220AB | 800V | 208W Tc | N-Channel | 1836pF @ 100V | 184mOhm @ 10A, 10V | 4V @ 250μA | 21A Tc | 89nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IAUS200N08S5N023ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-iaus200n08s5n023atma1-datasheets-1723.pdf | 8-PowerSMD, Gull Wing | 80V | 200W Tc | N-Channel | 7670pF @ 40V | 2.3m Ω @ 100A, 10V | 3.8V @ 130μA | 200A Tc | 110nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP35N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Through Hole | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | compliant | NOT SPECIFIED | STP35N | NOT SPECIFIED | 600V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW25N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 16 Weeks | EAR99 | NOT SPECIFIED | STW25N | NOT SPECIFIED | 600V | 150W Tc | N-Channel | 1090pF @ 100V | 188m Ω @ 9A, 10V | 4.75V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFW24N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf24n60m2-datasheets-4279.pdf | TO-3PF | 15.7mm | 26.7mm | 5.7mm | 12 Weeks | 6.961991g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STFW | 1 | Single | NOT SPECIFIED | 14 ns | 9ns | 15 ns | 60 ns | 18A | 25V | 48W Tc | 600V | N-Channel | 1060pF @ 100V | 190m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| STI20N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp20n65m5-datasheets-2124.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 17 Weeks | 3 | EAR99 | No | STI20N | Single | 130W | 1 | 7.5ns | 7.5 ns | 18A | 25V | SILICON | DRAIN | SWITCHING | 130W Tc | 72A | 270 mJ | 650V | N-Channel | 1434pF @ 100V | 190m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 36nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| STP180NS04ZC | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SAFeFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp180ns04zc-datasheets-1733.pdf | TO-220-3 | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP180 | 3 | Single | 300W | 1 | FET General Purpose Power | R-PSFM-T3 | 250ns | 115 ns | 120A | 20V | SILICON | SWITCHING | 330W Tc | TO-220AB | 480A | 0.0042Ohm | 33V | N-Channel | 4560pF @ 25V | 4.2m Ω @ 40A, 10V | 4V @ 1mA | 120A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STH130N10F3-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp130n10f3-datasheets-6199.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 245 | STH130 | 30 | 250W | 1 | FET General Purpose Powers | R-PSSO-G2 | 17 ns | 38ns | 7.2 ns | 52 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | 450A | 100V | N-Channel | 3305pF @ 25V | 9.3m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| TK8A10K3,S5Q | Toshiba Semiconductor and Storage | $3.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk8a10k3s5q-datasheets-1643.pdf | TO-220-3 Full Pack | 52 Weeks | TO-220SIS | 530pF | 8A | 100V | 18W Tc | N-Channel | 530pF @ 10V | 120mOhm @ 4A, 10V | 4V @ 1mA | 8A Ta | 12.9nC @ 10V | 120 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW26N65DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw26n65dm2-datasheets-1645.pdf | TO-247-3 | 17 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 650V | 170W Tc | N-Channel | 1480pF @ 100V | 190m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 35.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP26N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp26n60m2-datasheets-1646.pdf | TO-220-3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | STP26N | 600V | 169W Tc | N-Channel | 20A Tc | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA06N120P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 1200V | 42W Tc | N-Channel | 236pF @ 25V | 34 Ω @ 300mA, 10V | 4V @ 50μA | 600mA Tc | 13.3nC @ 10V | 10V | ±30V |
