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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIR626ADP-T1-RE3 | Vishay Siliconix | $1.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir626adpt1re3-datasheets-1155.pdf | PowerPAK® SO-8 | PowerPAK® SO-8 | 60V | 6.25W Ta 104W Tc | N-Channel | 3770pF @ 30V | 1.75mOhm @ 20A, 10V | 3.5V @ 250μA | 40.4A Ta 165A Tc | 83nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA11N80AE-GE3 | Vishay Siliconix | $1.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha11n80aege3-datasheets-1156.pdf | TO-220-3 Full Pack | TO-220 Full Pack | 800V | 31W Tc | N-Channel | 804pF @ 100V | 450mOhm @ 5.5A, 10V | 4V @ 250μA | 8A Tc | 42nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP11N80AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp11n80aege3-datasheets-1154.pdf | TO-220-3 | TO-220AB | 800V | 78W Tc | N-Channel | 804pF @ 100V | 450mOhm @ 5.5A, 10V | 4V @ 250μA | 8A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD9N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std9n80k5-datasheets-1158.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | EAR99 | NOT SPECIFIED | STD9N | NOT SPECIFIED | 800V | 110W Tc | N-Channel | 340pF @ 100V | 900m Ω @ 3.5A, 10V | 5V @ 100μA | 7A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI6N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std6n80k5-datasheets-3682.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 17 Weeks | 2.084002g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | STI6N | Single | 110W | 1 | 4.5A | 30V | SILICON | DRAIN | SWITCHING | 85W Tc | 85 mJ | 800V | N-Channel | 255pF @ 100V | 1.6 Ω @ 2A, 10V | 5V @ 100μA | 4.5A Tc | 7.5nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||
| STH52N10LF3-2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F3 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 38 Weeks | STH52N | 100V | 110W Tc | N-Channel | 1900pF @ 400V | 20m Ω @ 26A, 10V | 2.5V @ 250μA | 52A Tc | 18.5nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STDLED627 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stdled627-datasheets-1164.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 3 | No | STDLE | 22 ns | 12ns | 20 ns | 49 ns | 7A | 30V | 620V | 90W Tc | N-Channel | 890pF @ 50V | 1.2 Ω @ 2.8A, 10V | 4.5V @ 50μA | 7A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFILED524 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfiled524-datasheets-1084.pdf | TO-262-3 Full Pack, I2Pak | 3 | 42 Weeks | 3 | No | SINGLE | STFILE | 1 | 8 ns | 7ns | 14 ns | 21 ns | 4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 525V | 525V | 20W Tc | TO-281 | 4A | 110 mJ | N-Channel | 340pF @ 100V | 2.6 Ω @ 2.2A, 10V | 4.5V @ 50μA | 4A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| R6006JND3TL1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-r6006jnd3tl1-datasheets-1167.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 86W Tc | 6A | 18A | 0.936Ohm | 117 mJ | N-Channel | 410pF @ 100V | 936m Ω @ 3A, 15V | 7V @ 800μA | 6A Tc | 15.5nC @ 15V | 15V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| STD95P3LLH6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ H6 | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | ACTIVE (Last Updated: 8 months ago) | STD95 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6727MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf6727mtrpbf-datasheets-1089.pdf | DirectFET™ Isometric MX | 6.35mm | 508μm | 5.0546mm | 3 | 12 Weeks | No SVHC | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 21 ns | 31ns | 16 ns | 24 ns | 32A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.8W Ta 89W Tc | 260A | 30V | N-Channel | 6190pF @ 15V | 1.7m Ω @ 32A, 10V | 2.35V @ 100μA | 32A Ta 180A Tc | 74nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIHJ690N60E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihj690n60et1ge3-datasheets-0997.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 600V | 48W Tc | N-Channel | 347pF @ 100V | 700mOhm @ 2A, 10V | 5V @ 250μA | 5.6A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP140N4F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F6 | Through Hole | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 40 Weeks | STP140 | 40V | 168W Tc | N-Channel | 80A Tc | 4.5V 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFU13N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | STFU1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP12N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STP12 | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL11N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerVDFN | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STL11 | NOT SPECIFIED | 600V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF15P12 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fqpf15p12-datasheets-1032.pdf | -120V | -15A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 19 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 41W | 1 | Other Transistors | 15 ns | 100ns | 80 ns | 80 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 120V | 41W Tc | TO-220AB | 60A | 0.2Ohm | -120V | P-Channel | 1100pF @ 25V | 200m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| NTTFS1D2N02P1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nttfs1d2n02p1e-datasheets-0987.pdf | 8-PowerWDFN | 14 Weeks | yes | 25V | 820mW Ta 52W Tc | N-Channel | 4040pF @ 13V | 1m Ω @ 38A, 10V | 2V @ 934μA | 23A Ta 180A Tc | 24nC @ 4.5V | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP12P20 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp12p20-datasheets-1046.pdf | -200V | -11.5A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 470MOhm | 3 | 2.54mm | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 120W | 1 | Other Transistors | 20 ns | 195ns | 60 ns | 40 ns | 11.5A | 30V | -200V | SILICON | SWITCHING | 200V | -5V | 120W Tc | TO-220AB | 46A | -200V | P-Channel | 1200pF @ 25V | -5 V | 470m Ω @ 5.75A, 10V | 5V @ 250μA | 11.5A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| TK4R3A06PL,S4X | Toshiba Semiconductor and Storage | $1.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Through Hole | 175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-220-3 Full Pack | 12 Weeks | TO-220SIS | 60V | 36W Tc | N-Channel | 3280pF @ 30V | 7.2mOhm @ 15A, 4.5V | 2.5V @ 500μA | 68A Tc | 48.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB24N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp24n60m2-datasheets-1626.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 3 | 26 Weeks | 190mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | THROUGH-HOLE | STB24N | Single | 150W | 1 | 14 ns | 9ns | 61 ns | 15 ns | 18A | 25V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 72A | 180 mJ | 600V | N-Channel | 1060pF @ 100V | 190m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| STL92N10F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl92n10f7ag-datasheets-0999.pdf | 8-PowerVDFN | Lead Free | 5 | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | DUAL | FLAT | NOT SPECIFIED | STL92 | NOT SPECIFIED | 1 | R-PDSO-F5 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 5W Ta 100W Tc | 64A | 0.0095Ohm | N-Channel | 3100pF @ 50V | 9.5 Ω @ 8A, 10V | 4.5V @ 250μA | 16A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STP13N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp13n60dm2-datasheets-1066.pdf | TO-220-3 | 17 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 600V | 110W Tc | N-Channel | 730pF @ 100V | 365m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 19nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU2N105K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std2n105k5-datasheets-9591.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STU2N | NOT SPECIFIED | FET General Purpose Power | 1.5A | Single | 1050V | 60W Tc | N-Channel | 115pF @ 100V | 8 Ω @ 750mA, 10V | 5V @ 100μA | 1.5A Tc | 10nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA02DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira02dpt1ge3-datasheets-1067.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | Tin | No | DUAL | C BEND | 1 | Single | 5W | 1 | R-PDSO-C5 | 31 ns | 16 ns | 42 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 1.1V | 5W Ta 71.4W Tc | 0.002Ohm | 45 mJ | 30V | N-Channel | 6150pF @ 15V | 1.1 V | 2m Ω @ 15A, 10V | 2.2V @ 250μA | 50A Tc | 117nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||
| FQU5P20TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqd5p20tm-datasheets-8874.pdf | -200V | -3.7A | TO-251-3 Short Leads, IPak, TO-251AA | 6.8mm | 7.57mm | 2.5mm | Lead Free | 3 | 4 Weeks | 343.08mg | 1.4Ohm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 2.5W | 1 | Other Transistors | 9 ns | 70ns | 25 ns | 12 ns | 3.7A | 30V | SILICON | SWITCHING | 200V | 2.5W Ta 45W Tc | -200V | P-Channel | 430pF @ 25V | 1.4 Ω @ 1.85A, 10V | 5V @ 250μA | 3.7A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| BSC0805LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc0805lsatma1-datasheets-0982.pdf | 26 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCAC10H045Y-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF260N4F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack | 38 Weeks | STF26 | 40V | 35W Tc | N-Channel | 5640pF @ 25V | 2.5m Ω @ 60A, 10V | 4V @ 250μA | 90A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF640STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irf640spbf-datasheets-2368.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.437803g | 180mOhm | 3 | EAR99 | AVALANCHE RATED | Tin | No | GULL WING | 260 | 4 | 1 | Single | 40 | 130W | 1 | R-PSSO-G2 | 14 ns | 51ns | 36 ns | 45 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 130W Tc | 72A | 580 mJ | 200V | N-Channel | 1300pF @ 25V | 180m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 70nC @ 10V | 10V | ±20V |
