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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Lead Length | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPA60R460CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r460cexksa1-datasheets-0791.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 2.299997g | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 11 ns | 9ns | 10 ns | 70 ns | 9.1A | 20V | 600V | SILICON | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 26A | 0.46Ohm | N-Channel | 620pF @ 100V | 460m Ω @ 3.4A, 10V | 3.5V @ 280μA | 9.1A Tc | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STL135N8F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl135n8f7ag-datasheets-0799.pdf | 8-PowerVDFN | Lead Free | 5 | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | DUAL | FLAT | NOT SPECIFIED | STL135 | NOT SPECIFIED | 1 | R-PDSO-F5 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 4.8W Ta 135W Tc | 120A | 0.0036Ohm | 1200 mJ | N-Channel | 6800pF @ 40V | 3.6m Ω @ 13A, 10V | 4.5V @ 250μA | 130A Tc | 103nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF2910L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | TO-220-3F | 1.19nF | 22A | 100V | 2.1W Ta 27W Tc | N-Channel | 1190pF @ 50V | 24mOhm @ 20A, 10V | 2.7V @ 250μA | 22A Tc | 15nC @ 10V | 24 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3205LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf3205strlpbf-datasheets-3553.pdf | 55V | 110A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | 200W | 1 | FET General Purpose Power | 14 ns | 101ns | 65 ns | 50 ns | 110A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 200W Tc | 75A | 0.008Ohm | 264 mJ | 55V | N-Channel | 3247pF @ 25V | 8m Ω @ 62A, 10V | 4V @ 250μA | 110A Tc | 146nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFR9110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr9110trpbf-datasheets-7143.pdf | -100V | -3.1A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.2Ohm | 3 | No | 1 | Single | 25W | 1 | D-Pak | 200pF | 10 ns | 27ns | 17 ns | 15 ns | -3.1A | 20V | 100V | -4V | 2.5W Ta 25W Tc | 160 ns | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDB8896 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdb8896-datasheets-0521.pdf | 30V | 93A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3mm | 1mm | 1.7mm | Lead Free | 2 | 10 Weeks | 1.31247g | No SVHC | 5.7MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | not_compliant | e3 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 80W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 9 ns | 102ns | 44 ns | 58 ns | 93A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 80W Tc | 80A | 74 mJ | 30V | N-Channel | 2525pF @ 15V | 5.7m Ω @ 35A, 10V | 2.5V @ 250μA | 19A Ta 93A Tc | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FDS86540 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fds86540-datasheets-0604.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | Lead Free | 8 | 9 Weeks | 130mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 5W | 1 | FET General Purpose Power | 28 ns | 15ns | 7.1 ns | 33 ns | 18A | 20V | SILICON | SWITCHING | 3.1V | 2.5W Ta 5W Tc | 0.0045Ohm | 60V | N-Channel | 6410pF @ 30V | 4.5m Ω @ 18A, 10V | 4V @ 250μA | 18A Ta | 90nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| AOTF2618L | Alpha & Omega Semiconductor Inc. | $0.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | TO-220-3F | 950pF | 22A | 60V | 2.1W Ta 23.5W Tc | N-Channel | 950pF @ 30V | 19mOhm @ 20A, 10V | 2.5V @ 250μA | 7A Ta 22A Tc | 20nC @ 10V | 19 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT4N60 | Alpha & Omega Semiconductor Inc. | $5.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 104W | 1 | TO-220 | 615pF | 4A | 30V | 600V | 104W Tc | N-Channel | 615pF @ 25V | 2.2Ohm @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 18nC @ 10V | 2.2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK40E06N1,S1X | Toshiba Semiconductor and Storage | $0.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | 40A | 60V | 67W Tc | N-Channel | 1700pF @ 30V | 10.4m Ω @ 20A, 10V | 4V @ 300μA | 40A Ta | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU3910PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfr3910trpbf-datasheets-0641.pdf | 100V | 16A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | 2.28mm | EAR99 | AVALANCHE RATED | 9.65mm | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 52W | 1 | FET General Purpose Power | Not Qualified | 6.4 ns | 27ns | 25 ns | 37 ns | 16A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 79W Tc | 15A | 60A | 0.115Ohm | 150 mJ | 100V | N-Channel | 640pF @ 25V | 4 V | 115m Ω @ 10A, 10V | 4V @ 250μA | 16A Tc | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| STL150N3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl150n3llh5-datasheets-0594.pdf | 8-PowerVDFN | 5mm | 950μm | 6mm | Lead Free | 5 | 14 Weeks | No SVHC | 1.75mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | STL150 | 8 | Single | 30 | 80W | 1 | FET General Purpose Power | R-PDSO-N5 | 17.2 ns | 30.8ns | 47.8 ns | 65.8 ns | 17.5A | 22V | SILICON | DRAIN | SWITCHING | 1.55V | 114W Tc | 35A | 300 mJ | 30V | N-Channel | 5800pF @ 25V | 1.75m Ω @ 17.5A, 10V | 2.2V @ 250μA | 195A Tc | 40nC @ 4.5V | 4.5V 10V | ±22V | ||||||||||||||||||||||||||||||||||||||||
| VP0109N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/microchiptechnology-vp0109n3g-datasheets-0550.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | HIGH INPUT IMPEDANCE | Tin | No | e3 | BOTTOM | 1 | Single | 1W | 1 | Other Transistors | 4 ns | 3ns | 4 ns | 8 ns | 250mA | 20V | SILICON | SWITCHING | 90V | 1W Tc | 0.25A | 8Ohm | 8 pF | -90V | P-Channel | 60pF @ 25V | 8 Ω @ 500mA, 10V | 3.5V @ 1mA | 250mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| STH140N6F7-6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-sth140n6f76-datasheets-0556.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 37 Weeks | EAR99 | NOT SPECIFIED | STH140 | NOT SPECIFIED | 60V | 158W Tc | N-Channel | 3100pF @ 25V | 3.2m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD80R450P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipd80r450p7atma1-datasheets-0575.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 11A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 73W Tc | TO-252AA | 29A | 0.45Ohm | 29 mJ | N-Channel | 770pF @ 500V | 450m Ω @ 4.5A, 10V | 3.5V @ 220μA | 11A Tc | 24nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STL115N10F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl115n10f7ag-datasheets-0505.pdf | 8-PowerVDFN | 5 | ACTIVE (Last Updated: 8 months ago) | YES | DUAL | FLAT | NOT SPECIFIED | STL115 | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 136W Tc | 75A | 428A | 0.006Ohm | 490 mJ | N-Channel | 5600pF @ 50V | 6m Ω @ 53A, 10V | 4.5V @ 250μA | 107A Tc | 72.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR220PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfu220pbf-datasheets-5110.pdf | 200V | 4.8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 800mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | GULL WING | 260 | 3 | 1 | Single | 40 | 42W | 1 | R-PSSO-G2 | 7.2 ns | 22ns | 13 ns | 19 ns | 4.8A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 42W Tc | 200V | N-Channel | 260pF @ 25V | 4 V | 800m Ω @ 2.9A, 10V | 4V @ 250μA | 4.8A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| DMTH4004SCTBQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth4004sctbq13-datasheets-0529.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 22 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 40V | 4.7W Ta 136W Tc | N-Channel | 4305pF @ 25V | 3m Ω @ 100A, 10V | 4V @ 250μA | 100A Tc | 68.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM90330E-GE3 | Vishay Siliconix | $39.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum90330ege3-datasheets-0533.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | EAR99 | unknown | 200V | 125W Tc | N-Channel | 1172pF @ 100V | 37.5m Ω @ 12.2A, 10V | 4V @ 250μA | 35.1A Tc | 32nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF510STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf510spbf-datasheets-1259.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3.7W | 1 | TO-263 (D2Pak) | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 3.7W Ta 43W Tc | 540mOhm | 100V | N-Channel | 180pF @ 25V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB081N06L3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb081n06l3gatma1-datasheets-0391.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | No SVHC | 3 | no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 79W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 15 ns | 26ns | 7 ns | 37 ns | 50A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.7V | 79W Tc | 200A | N-Channel | 4900pF @ 30V | 8.1m Ω @ 50A, 10V | 2.2V @ 34μA | 50A Tc | 29nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FCPF067N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcpf067n65s3-datasheets-0405.pdf | TO-220-3 Full Pack | 15 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 44A | 650V | 4.5V | 46W Tc | N-Channel | 3090pF @ 400V | 67m Ω @ 22A, 10V | 4.5V @ 4.4mA | 44A Tc | 78nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMS10P02R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntms10p02r2g-datasheets-0424.pdf | -20V | -10A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 21 Weeks | Unknown | 14MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 8 | Single | 40 | 2.5W | 1 | Other Transistors | 25 ns | 40ns | 110 ns | 110 ns | 10A | 12V | SILICON | SWITCHING | 20V | -880mV | 1.6W Ta | 4.5A | -20V | P-Channel | 3640pF @ 16V | 14m Ω @ 10A, 4.5V | 1.2V @ 250μA | 8.8A Ta | 70nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| SUD90330E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sud90330ege3-datasheets-0444.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 14 Weeks | EAR99 | unknown | 1 | 125W | 175°C | 12 ns | 30 ns | 35.8A | 20V | 125W Tc | 200V | N-Channel | 1172pF @ 100V | 37.5m Ω @ 12.2A, 10V | 4V @ 250μA | 35.8A Tc | 32nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4430BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4430bdyt1ge3-datasheets-0440.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | 20 ns | 14ns | 14 ns | 60 ns | 20A | 20V | SILICON | 3V | 1.6W Ta | 0.0045Ohm | 30V | N-Channel | 4.5m Ω @ 20A, 10V | 3V @ 250μA | 14A Ta | 36nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-06AP-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50n0306ape3-datasheets-0471.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | 5.7mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 10W | 1 | FET General Purpose Power | R-PSSO-G2 | 26 ns | 230ns | 9 ns | 25 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 30V | 10W Ta 83W Tc | 50A | N-Channel | 3800pF @ 15V | 1.2 V | 5.7m Ω @ 20A, 10V | 2.4V @ 250μA | 90A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STD170N4F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std170n4f7ag-datasheets-0446.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STD17 | NOT SPECIFIED | 40V | 172W Tc | N-Channel | 4350pF @ 25V | 2.8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z34STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf9z34strrpbf-datasheets-5811.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.437803g | 140mOhm | 3 | EAR99 | AVALANCHE RATED | Tin | No | GULL WING | 260 | 4 | 1 | Single | 40 | 3.7W | 1 | R-PSSO-G2 | 18 ns | 120ns | 58 ns | 20 ns | 18A | 20V | SILICON | SWITCHING | 60V | 3.7W Ta 88W Tc | 72A | -60V | P-Channel | 1100pF @ 25V | 140m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NDDP010N25AZT4H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-nddp010n25azt4h-datasheets-0268.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 6 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | SINGLE | GULL WING | 1 | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 26ns | 31 ns | 44 ns | 10A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1W Ta 52W Tc | 0.42Ohm | 250V | N-Channel | 980pF @ 20V | 420m Ω @ 5A, 10V | 4.5V @ 1mA | 10A Ta | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M11-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m1140ex-datasheets-9809.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | YES | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 62W Tc | 53A | 211A | 0.011Ohm | 32.4 mJ | N-Channel | 1721pF @ 25V | 9m Ω @ 15A, 10V | 2.1V @ 1mA | 53A Tc | 13.4nC @ 5V | 5V 10V | ±10V |
