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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTMFS5C456NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c456nlt1g-datasheets-9987.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.6W Ta 55W Tc | N-Channel | 1600pF @ 25V | 3.7m Ω @ 20A, 10V | 2V @ 250μA | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8445 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdd8445-datasheets-0001.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | No SVHC | 8.7MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | 50A | e3 | 40V | GULL WING | Single | 79W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 82ns | 9.6 ns | 26 ns | 70A | 20V | 40V | SILICON | DRAIN | SWITCHING | 2.8V | 79W Tc | TO-252AA | 39 ns | 40V | N-Channel | 4050pF @ 25V | 2.8 V | 8.7m Ω @ 50A, 10V | 4V @ 250μA | 70A Tc | 59nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| ZXMN2B03E6TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn2b03e6ta-datasheets-9803.pdf | SOT-23-6 | 3.1mm | 1.3mm | 1.8mm | Lead Free | 6 | 17 Weeks | 14.996898mg | No SVHC | 40mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.7W | 1 | 4.2 ns | 6.2ns | 6.2 ns | 33.9 ns | 5.4A | 8V | SILICON | SWITCHING | 20V | 20V | 1.1W Ta | 4.3A | N-Channel | 1160pF @ 10V | 40m Ω @ 4.3A, 4.5V | 1V @ 250μA | 4.3A Ta | 14.5nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| RQ6C065BCTCR | ROHM Semiconductor | $1.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-95-6 | 20 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 20V | 1.25W Tc | P-Channel | 1520pF @ 10V | 21m Ω @ 6.5A, 4.5V | 1.2V @ 1mA | 6.5A Tc | 22nC @ 4.5V | 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA08N100D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixtp08n100d2-datasheets-1351.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 24 Weeks | yes | unknown | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 800mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 60W Tc | TO-263AA | N-Channel | 325pF @ 25V | 21 Ω @ 400mA, 0V | 800mA Tc | 14.6nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R080P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r080p7xksa1-datasheets-9880.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 29W Tc | TO-220AB | 110A | 0.08Ohm | 118 mJ | N-Channel | 2180pF @ 400V | 80m Ω @ 11.8A, 10V | 4V @ 590μA | 37A Tc | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF40R207 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1999 | /files/infineontechnologies-irf40r207-datasheets-9852.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 5.1mOhm | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 56A | 40V | 83W Tc | N-Channel | 2110pF @ 25V | 5.1m Ω @ 55A, 10V | 3.9V @ 50μA | 56A Tc | 68nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD3055-150T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-nvd3055150t4gvf01-datasheets-0143.pdf | 60V | 9A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 8 Weeks | 122MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | GULL WING | 260 | 3 | Single | 40 | 28.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 11.2 ns | 37.1ns | 23 ns | 12.2 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta 28.8W Tj | 9A | 27A | 60V | N-Channel | 280pF @ 25V | 150m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Ta | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| DMT10H025SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt10h025sss13-datasheets-9677.pdf | 8-SOIC (0.154, 3.90mm Width) | 21 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100V | 1.4W Ta | N-Channel | 1544pF @ 50V | 23m Ω @ 20A, 10V | 4V @ 250μA | 7.4A Ta | 21.4nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4492 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 18 Weeks | 8 | FET General Purpose Power | 14A | Single | 30V | 3.1W Ta | N-Channel | 770pF @ 15V | 9.5m Ω @ 14A, 10V | 2.2V @ 250μA | 14A Ta | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVJS4151PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvjs4151pt1g-datasheets-9671.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 2 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | 3.2A | 20V | 1.2W Ta | P-Channel | 850pF @ 10V | 67m Ω @ 2.9A, 4.5V | 1.2V @ 250μA | 3.2A Ta | 10nC @ 4.5V | 1.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ3E180BNTB | ROHM Semiconductor | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-PowerVDFN | Lead Free | 5 | 20 Weeks | yes | EAR99 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2W Ta 20W Tc | 18A | 72A | 0.0052Ohm | 23.3 mJ | N-Channel | 3500pF @ 15V | 3.9m Ω @ 18A, 10V | 2.5V @ 1mA | 39A Tc | 37nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI540GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfi540gpbf-datasheets-9758.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 77mOhm | 3 | No | 1 | Single | 48W | 1 | TO-220-3 | 1.7nF | 2.5kV | 11 ns | 44ns | 43 ns | 53 ns | 17A | 20V | 100V | 4V | 48W Tc | 77mOhm | N-Channel | 1700pF @ 25V | 4 V | 77mOhm @ 10A, 10V | 4V @ 250μA | 17A Tc | 72nC @ 10V | 77 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMS3014SFGQ-7 | Diodes Incorporated | $0.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dms3014sfgq7-datasheets-9743.pdf | 8-PowerVDFN | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 1W Ta | N-Channel | 4310pF @ 15V | 14.5m Ω @ 10.4A, 10V | 2.2V @ 250μA | 9.5A Ta | 19.3nC @ 10V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLM220ATF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-irlm220atf-datasheets-9716.pdf | TO-261-4, TO-261AA | 4 | 21 Weeks | 188mg | 4 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2W | 1 | FET General Purpose Power | 6 ns | 24ns | 6 ns | 6 ns | 1.13A | 20V | SILICON | DRAIN | SWITCHING | 2W Tc | 9A | 0.8Ohm | 29 mJ | 200V | N-Channel | 430pF @ 25V | 800m Ω @ 570mA, 5V | 1.13A Ta | 15nC @ 5V | 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M34-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m34100ex-datasheets-9787.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 29A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 79W Tc | 114A | 0.034Ohm | 57.8 mJ | N-Channel | 2844pF @ 25V | 34m Ω @ 5A, 10V | 2.1V @ 1mA | 29A Tc | 24.7nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN4800LSSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn4800lssq13-datasheets-9511.pdf | 8-SOIC (0.154, 3.90mm Width) | 15 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 8.6A | 30V | 1.46W Ta | N-Channel | 798pF @ 10V | 14m Ω @ 9A, 10V | 1.6V @ 250μA | 8.6A Ta | 8.7nC @ 5V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD70R950CEAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ips70r950ceakma1-datasheets-6992.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 1 | R-PSSO-G2 | 7.4A | 700V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 68W Tc | 12A | 0.95Ohm | 50 mJ | N-Channel | 328pF @ 100V | 950m Ω @ 1.5A, 10V | 3.5V @ 150μA | 7.4A Tc | 15.3nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8729TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irlr8729trpbf-datasheets-9545.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 55W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 47ns | 10 ns | 11 ns | 58A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55W Tc | TO-252AA | 50A | 260A | 0.0089Ohm | 74 mJ | 30V | N-Channel | 1350pF @ 15V | 8.9m Ω @ 25A, 10V | 2.35V @ 25μA | 58A Tc | 16nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| ZXMN3A01ZTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zxmn3a01zta-datasheets-9519.pdf | TO-243AA | Lead Free | 3 | 17 Weeks | 130.492855mg | No SVHC | 120mOhm | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | SINGLE | FLAT | 260 | 1 | 40 | 1 | R-PSSO-F3 | 2.6 ns | 4.1ns | 3.6 ns | 13.5 ns | 2.2A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 970mW Ta | 3.3A | 30V | N-Channel | 186pF @ 25V | 120m Ω @ 2.5A, 10V | 1V @ 250μA | 2.2A Ta | 5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7694 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7694-datasheets-1835.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 26 Weeks | 74mg | No SVHC | 8 | ACTIVE (Last Updated: 19 hours ago) | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | Single | 27W | 1 | FET General Purpose Power | R-PDSO-F5 | 8.4 ns | 2ns | 1.6 ns | 18 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.5W Ta 27W Tc | MO-240AA | 47A | 50A | 0.0095Ohm | 30V | N-Channel | 1410pF @ 15V | 2 V | 9.5m Ω @ 13.2A, 10V | 3V @ 250μA | 13.2A Ta 20A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI8424CDB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si8424cdbt1e1-datasheets-9622.pdf | 4-UFBGA, WLCSP | Lead Free | 4 | 21 Weeks | No SVHC | 20mOhm | 4 | EAR99 | Tin | No | BOTTOM | BALL | 1 | Single | 2.7W | 1 | FET General Purpose Power | 30 ns | 40ns | 40 ns | 150 ns | 10A | 5V | SILICON | SWITCHING | 8V | 8V | 800mV | 1.1W Ta 2.7W Tc | N-Channel | 2340pF @ 4V | 20m Ω @ 2A, 4.5V | 800mV @ 250μA | 40nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1HN04CH-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-1hn04chtlw-datasheets-9667.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 7 Weeks | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | Tin | e6 | 600mW | DUAL | GULL WING | 1 | 1 | FET General Purpose Power | R-PDSO-G3 | 10 ns | 7.4ns | 39 ns | 58 ns | 270mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 100V | 0.27A | 8Ohm | N-Channel | 15pF @ 20V | 8 Ω @ 140mA, 10V | 2.6V @ 100μA | 270mA Ta | 0.9nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN1016UCB6-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn1016ucb67-datasheets-9674.pdf | 6-UFBGA, WLBGA | 28 Weeks | 6 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 5.5A | 12V | 920mW Ta | N-Channel | 423pF @ 6V | 20m Ω @ 1.5A, 4.5V | 1V @ 250μA | 5.5A Ta | 4.2nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3051LDM-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmn3051ldm7-datasheets-9423.pdf | SOT-23-6 | 3mm | 1.1mm | 1.6mm | 6 | 15 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 40 | 900mW | 1 | FET General Purpose Power | 4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900mW Ta | 4A | 0.038Ohm | 30V | N-Channel | 424pF @ 5V | 38m Ω @ 6A, 10V | 2.2V @ 250μA | 4A Ta | 8.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMN2100UDM-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn2100udm7-datasheets-9446.pdf | SOT-23-6 | 3mm | 1.1mm | 1.6mm | 6 | 15 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 40 | 1.5W | 1 | FET General Purpose Power | 53 ns | 78ns | 234 ns | 561 ns | 3.3A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Ta | 0.055Ohm | 84 pF | 20V | N-Channel | 555pF @ 10V | 55m Ω @ 6A, 4.5V | 1V @ 250μA | 3.3A Ta | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| PMPB29XPE,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmpb29xpe115-datasheets-9494.pdf | 6-UDFN Exposed Pad | 6 | 8 Weeks | 6 | Tin | e3 | YES | DUAL | NO LEAD | NOT SPECIFIED | 6 | 1 | Single | NOT SPECIFIED | 1 | 12 ns | 53ns | 48 ns | 91 ns | 5A | -680mV | -20V | SILICON | DRAIN | SWITCHING | 20V | 1.7W Ta 12.5W Tc | 5A | 0.038Ohm | -20V | P-Channel | 2970pF @ 10V | 32.5m Ω @ 5A, 4.5V | 900mV @ 250μA | 5A Ta | 45nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN7R5-30MLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-psmn7r530mldx-datasheets-9523.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | 8 | Tin | No | YES | SINGLE | GULL WING | 8 | 1 | 45W | 1 | R-PSSO-G4 | 7.1 ns | 10.4ns | 5.5 ns | 8.5 ns | 57A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 45W Tc | 230A | 0.0076Ohm | 30V | N-Channel | 655pF @ 15V | 7.6m Ω @ 15A, 10V | 2.2V @ 1mA | 57A Tc | 11.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB025N08N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb025n08n3gatma1-datasheets-9102.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 28 ns | 73ns | 33 ns | 86 ns | 120A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 480A | 0.0025Ohm | N-Channel | 14200pF @ 40V | 2.5m Ω @ 100A, 10V | 3.5V @ 270μA | 120A Tc | 206nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIA477EDJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia477edjtt1ge3-datasheets-9564.pdf | PowerPAK® SC-70-6 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 12V | 19W Tc | P-Channel | 3050pF @ 6V | 13m Ω @ 5A, 4.5V | 1V @ 250μA | 12A Tc | 50nC @ 4.5V | 1.8V 4.5V | ±8V |
