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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STD13N50DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 17 Weeks | compliant | NOT SPECIFIED | STD13 | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL86N3LLH6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ H6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl86n3llh6ag-datasheets-0980.pdf | 8-PowerVDFN | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL86 | NOT SPECIFIED | FET General Purpose Power | 80A | Single | 30V | 4W Ta 60W Tc | N-Channel | 2030pF @ 25V | 5.2m Ω @ 10.5A, 10V | 2.5V @ 250μA | 80A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB8N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb8n90k5-datasheets-0974.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 26 Weeks | ACTIVE (Last Updated: 8 months ago) | STB8N | 900V | 130W Tc | N-Channel | 800m Ω @ 1.17A, 10V | 5V @ 100μA | 8A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT9N50 | Alpha & Omega Semiconductor Inc. | $4.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 18 Weeks | FET General Purpose Power | 9A | Single | 500V | 192W Tc | 9A | N-Channel | 1042pF @ 25V | 850m Ω @ 4.5A, 10V | 4.5V @ 250μA | 9A Tc | 28nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY08N50D2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 24 Weeks | 500V | 60W Tc | N-Channel | 312pF @ 25V | 4.6 Ω @ 400mA, 0V | 4.5V @ 25μA | 800mA Tj | 12.7nC @ 5V | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF520SPBF | Vishay Siliconix | $1.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf520spbf-datasheets-0907.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 3 | No | D2PAK | 360pF | 8.8 ns | 30ns | 20 ns | 19 ns | 9.2A | 20V | 100V | 3.7W Ta 60W Tc | N-Channel | 360pF @ 25V | 270mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 16nC @ 10V | 270 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK22E10N1,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 | 12 Weeks | 52A | 100V | 72W Tc | N-Channel | 1800pF @ 50V | 13.8m Ω @ 11A, 10V | 4V @ 300μA | 52A Tc | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK560A65Y,S4X | Toshiba Semiconductor and Storage | $1.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSV | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 650V | 30W | N-Channel | 380pF @ 300V | 560mOhm @ 3.5A, 10V | 4V @ 240μA | 7A Tc | 14.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP44N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixty44n10t-datasheets-4025.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 47ns | 32 ns | 36 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 130W Tc | TO-220AB | 0.03Ohm | 250 mJ | 100V | N-Channel | 1262pF @ 25V | 30m Ω @ 22A, 10V | 4.5V @ 25μA | 44A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRF2807STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf2807strlpbf-datasheets-0613.pdf | 75V | 82A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 170W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 64ns | 48 ns | 49 ns | 82A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 230W Tc | 150 ns | 75A | 280A | 75V | N-Channel | 3820pF @ 25V | 4 V | 13m Ω @ 43A, 10V | 4V @ 250μA | 82A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| TK22A10N1,S4X | Toshiba Semiconductor and Storage | $1.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | FET General Purpose Power | 27 ns | 11ns | 11 ns | 38 ns | 22A | 20V | 100V | 30W Tc | 52A | N-Channel | 1800pF @ 50V | 13.8m Ω @ 11A, 10V | 4V @ 300μA | 22A Tc | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB140N4F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F6 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 40 Weeks | STB140N | 40V | 168W Tc | N-Channel | 80A Tc | 4.5V 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD11N50M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf11n50m2-datasheets-4798.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | STD11 | 8A | 500V | 85W Tc | N-Channel | 395pF @ 100V | 530m Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD13NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 16 Weeks | OBSOLETE (Last Updated: 7 months ago) | NOT SPECIFIED | STD13 | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK32A12N1,S4X | Toshiba Semiconductor and Storage | $2.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 2nF | 33 ns | 14ns | 14 ns | 43 ns | 32A | 20V | 120V | 30W Tc | 11mOhm | N-Channel | 2000pF @ 60V | 13.8mOhm @ 16A, 10V | 4V @ 500μA | 32A Tc | 34nC @ 10V | 13.8 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF640STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irf640spbf-datasheets-2368.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.437803g | 180mOhm | 3 | EAR99 | AVALANCHE RATED | Tin | No | GULL WING | 260 | 4 | 1 | Single | 40 | 130W | 1 | R-PSSO-G2 | 14 ns | 51ns | 36 ns | 45 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 130W Tc | 72A | 580 mJ | 200V | N-Channel | 1300pF @ 25V | 180m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TK3R1A04PL,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Through Hole | 175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-220-3 Full Pack | 12 Weeks | TO-220SIS | 40V | 36W Tc | N-Channel | 4670pF @ 20V | 3.8mOhm @ 30A, 4.5V | 2.4V @ 500μA | 82A Tc | 63.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI100N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Tape & Reel (TR) | Not Applicable | MOSFET (Metal Oxide) | TO-262-3 Long Leads, I2Pak, TO-262AA | 38 Weeks | compliant | STI100N | 100V | N-Channel | 80A | 60nC @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK40A06N1,S4X | Toshiba Semiconductor and Storage | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | FET General Purpose Power | 30 ns | 14ns | 13 ns | 36 ns | 40A | 20V | 30W Tc | 60A | 60V | N-Channel | 1700pF @ 30V | 10.4m Ω @ 20A, 10V | 4V @ 300μA | 40A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK58E06N1,S1X | Toshiba Semiconductor and Storage | $0.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshiba-tk58e06n1s1x-datasheets-2106.pdf | TO-220-3 | 12 Weeks | 58A | 60V | 110W Tc | N-Channel | 3400pF @ 30V | 5.4m Ω @ 29A, 10V | 4V @ 500μA | 58A Ta | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN7R6-60PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn7r660ps127-datasheets-0881.pdf | TO-220-3 | 3 | 12 Weeks | 3 | Tin | No | e3 | NO | 3 | Single | 149W | 1 | 19 ns | 21ns | 13 ns | 37 ns | 92A | 20V | 60V | SILICON | DRAIN | SWITCHING | 149W Tc | TO-220AB | 0.0078Ohm | 60V | N-Channel | 2651pF @ 30V | 7.8m Ω @ 25A, 10V | 4V @ 1mA | 92A Tc | 38.7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FQP19N20 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqp19n20-datasheets-0887.pdf | 200V | 19.4A | TO-220-3 | 10.2mm | 15.38mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | No SVHC | 150mOhm | 3 | 2.54mm | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 140W | 1 | FET General Purpose Power | 20 ns | 190ns | 80 ns | 55 ns | 19.4A | 30V | 200V | SILICON | SWITCHING | 5V | 140W Tc | TO-220AB | 140 ns | 78A | 250 mJ | 200V | N-Channel | 1600pF @ 25V | 5 V | 150m Ω @ 9.7A, 10V | 5V @ 250μA | 19.4A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| STH140N6F7-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-sth140n6f76-datasheets-0556.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 37 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STH140 | NOT SPECIFIED | 80A | 60V | 158W Tc | N-Channel | 2700pF @ 25V | 3m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHP20N06T,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/nexperiausainc-php20n06t127-datasheets-0776.pdf | TO-220-3 | 10.3mm | 9.4mm | 4.7mm | 3 | 12 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | 3 | Single | 62W | 1 | 10 ns | 50ns | 40 ns | 70 ns | 20A | 20V | 55V | SILICON | DRAIN | SWITCHING | 62W Tc | 81A | 0.075Ohm | 55V | N-Channel | 483pF @ 25V | 75m Ω @ 10A, 10V | 4V @ 1mA | 20.3A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| TK30E06N1,S1X | Toshiba Semiconductor and Storage | $2.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | 43A | 60V | 53W Tc | N-Channel | 1050pF @ 30V | 15m Ω @ 15A, 10V | 4V @ 200μA | 43A Ta | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS70R360P7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/infineontechnologies-ips70r360p7sakma1-datasheets-0786.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 18 Weeks | yes | EAR99 | 700V | 59.5W Tc | N-Channel | 517pF @ 400V | 360m Ω @ 3A, 10V | 3.5V @ 150μA | 12.5A Tc | 16.4nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R460CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r460cexksa1-datasheets-0791.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 2.299997g | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 11 ns | 9ns | 10 ns | 70 ns | 9.1A | 20V | 600V | SILICON | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 26A | 0.46Ohm | N-Channel | 620pF @ 100V | 460m Ω @ 3.4A, 10V | 3.5V @ 280μA | 9.1A Tc | 28nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STL135N8F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl135n8f7ag-datasheets-0799.pdf | 8-PowerVDFN | Lead Free | 5 | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | DUAL | FLAT | NOT SPECIFIED | STL135 | NOT SPECIFIED | 1 | R-PDSO-F5 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 4.8W Ta 135W Tc | 120A | 0.0036Ohm | 1200 mJ | N-Channel | 6800pF @ 40V | 3.6m Ω @ 13A, 10V | 4.5V @ 250μA | 130A Tc | 103nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF2910L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | TO-220-3F | 1.19nF | 22A | 100V | 2.1W Ta 27W Tc | N-Channel | 1190pF @ 50V | 24mOhm @ 20A, 10V | 2.7V @ 250μA | 22A Tc | 15nC @ 10V | 24 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3205LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf3205strlpbf-datasheets-3553.pdf | 55V | 110A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | 200W | 1 | FET General Purpose Power | 14 ns | 101ns | 65 ns | 50 ns | 110A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 200W Tc | 75A | 0.008Ohm | 264 mJ | 55V | N-Channel | 3247pF @ 25V | 8m Ω @ 62A, 10V | 4V @ 250μA | 110A Tc | 146nC @ 10V | 10V | ±20V |
