Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STL140N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl140n6f7-datasheets-4465.pdf | 8-PowerVDFN | Lead Free | 22 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL140 | NOT SPECIFIED | 145A | 60V | 4.8W Ta 125W Tc | N-Channel | 2700pF @ 25V | 2.5m Ω @ 16A, 10V | 4V @ 1mA | 145A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RRH140P03TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/rohm-rrh140p03tb1-datasheets-7459.pdf | 8-SOIC (0.154, 3.90mm Width) | 52 Weeks | 8 | NOT SPECIFIED | NOT SPECIFIED | 2W | 14A | 30V | 650mW Ta | -30V | P-Channel | 8000pF @ 10V | 7m Ω @ 14A, 10V | 2.5V @ 1mA | 14A Ta | 80nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC86012 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc86012-datasheets-4447.pdf | 8-PowerWDFN | 5 | 12 Weeks | 152.7mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | DUAL | Single | 54W | 1 | FET General Purpose Power | S-PDSO-N5 | 20 ns | 11ns | 8 ns | 43 ns | 23A | 12V | SILICON | DRAIN | SWITCHING | 2.3W Ta 54W Tc | MO-240BA | 230A | 0.0027Ohm | 337 mJ | 30V | N-Channel | 5075pF @ 15V | 2.7m Ω @ 23A, 4.5V | 1.5V @ 250μA | 23A Ta | 38nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| STL3NK40 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl3nk40-datasheets-4535.pdf | 8-PowerVDFN | 4 | 12 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | DUAL | STL3 | 1 | 3 ns | 4ns | 16 ns | 18 ns | 430mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 2.5W Tc | 6 pF | N-Channel | 200pF @ 25V | 5.5 Ω @ 220mA, 10V | 2V @ 50μA | 430mA Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STL19N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl19n60dm2-datasheets-4537.pdf | 8-PowerVDFN | 12 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | STL19 | 11A | 600V | 90W Tc | N-Channel | 320m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 21nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL16N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerVDFN | 26 Weeks | ACTIVE (Last Updated: 8 months ago) | STL16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50P03-07_GE3 | Vishay Siliconix | $12.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0307ge3-datasheets-4543.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 136W | 1 | TO-252AA | 11 ns | 12ns | 28 ns | 63 ns | 50A | 20V | 30V | 136W Tc | P-Channel | 5490pF @ 25V | 7mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 146nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB18NF25 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std18nf25-datasheets-3277.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 165MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB18N | 4 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.8 ns | 17.2ns | 8.8 ns | 21 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | 68A | 54 mJ | 250V | N-Channel | 1000pF @ 25V | 165m Ω @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 29.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| DN3765K4-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/microchiptechnology-dn3765k4g-datasheets-4545.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.1mm | Lead Free | 2 | 8 Weeks | 3.949996g | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) | GULL WING | 260 | 1 | Single | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PSSO-G2 | 50 ns | 75ns | 100 ns | 75 ns | 300mA | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta | 0.5A | 8Ohm | 650V | N-Channel | 825pF @ 25V | 8 Ω @ 150mA, 0V | 300mA Tj | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDMS039N08B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms039n08b-datasheets-4212.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 5 | 7 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-F5 | 42 ns | 25ns | 17 ns | 48 ns | 19.4A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 104W Tc | MO-240AA | 400A | 0.0039Ohm | 240 mJ | 80V | N-Channel | 7600pF @ 40V | 3.9m Ω @ 50A, 10V | 4.5V @ 250μA | 19.4A Ta 100A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIE868DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie868dft1ge3-datasheets-4585.pdf | 10-PolarPAK® (L) | 4 | 15 Weeks | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 40 ns | 165ns | 110 ns | 65 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 60A | 0.0029Ohm | 40V | N-Channel | 6100pF @ 20V | 2.3m Ω @ 20A, 10V | 2.2V @ 250μA | 60A Tc | 145nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STD10NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu10nm60n-datasheets-5644.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 16 Weeks | No SVHC | 600mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD10 | 3 | Single | 30 | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 12ns | 15 ns | 32 ns | 10A | 25V | SILICON | SWITCHING | 3V | 70W Tc | 8A | 200 mJ | 600V | N-Channel | 540pF @ 50V | 3 V | 550m Ω @ 4A, 10V | 4V @ 250μA | 10A Tc | 19nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||
| PSMN1R0-40YSHX | Nexperia USA Inc. | $3.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn1r040yshx-datasheets-4303.pdf | SOT-1023, 4-LFPAK | 12 Weeks | 40V | 333W Ta | N-Channel | 9433pF @ 20V | 1m Ω @ 25A, 10V | 3.6V @ 1mA | 290A Ta | 122nC @ 10V | Schottky Diode (Body) | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC2514SDC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdmc2514sdc-datasheets-4440.pdf | 8-PowerTDFN | 3.3mm | 950μm | 3.3mm | 5 | 8 Weeks | 32.13mg | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | Single | 3W | 1 | FET General Purpose Power | S-PDSO-N5 | 11 ns | 3.6ns | 3 ns | 26 ns | 24A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 1.7V | 3W Ta 60W Tc | MO-240BA | 40A | 200A | 0.0035Ohm | 25V | N-Channel | 2705pF @ 13V | 1.7 V | 3.5m Ω @ 22.5A, 10V | 3V @ 1mA | 24A Ta 40A Tc | 44nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| TSM70N750CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm70n750chc5g-datasheets-7811.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 36 Weeks | TO-252, (D-Pak) | 700V | 62.5W Tc | N-Channel | 555pF @ 100V | 750mOhm @ 1.8A, 10V | 4V @ 250μA | 6A Tc | 10.7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86101A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdms86101a-datasheets-4469.pdf | 8-PowerTDFN | 5mm | 1.05mm | 5.85mm | 5 | 10 Weeks | 68.1mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 104W | 1 | FET General Purpose Power | R-PDSO-F5 | 19 ns | 5.4ns | 4 ns | 27 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 3.1V | 2.5W Ta 104W Tc | MO-240AA | 100V | N-Channel | 4120pF @ 50V | 8m Ω @ 13A, 10V | 4V @ 250μA | 13A Ta 60A Tc | 58nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| HAT2166H-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2166hele-datasheets-4490.pdf | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 20 | 25W | 1 | FET General Purpose Power | R-PSSO-G4 | 12 ns | 35ns | 7.5 ns | 55 ns | 45A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 25W Tc | N-Channel | 4400pF @ 10V | 3.8m Ω @ 22.5A, 10V | 2.5V @ 1mA | 45A Ta | 27nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIE882DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie882dft1ge3-datasheets-4337.pdf | 10-PolarPAK® (L) | 4 | 14 Weeks | 10 | yes | EAR99 | ULTRA-LOW RESISTANCE | unknown | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 10 | 1 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N4 | 45 ns | 170ns | 85 ns | 65 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 25V | 25V | 5.2W Ta 125W Tc | N-Channel | 6400pF @ 12.5V | 1.4m Ω @ 20A, 10V | 2.2V @ 250μA | 60A Tc | 145nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFR9220TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 1.5Ohm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 340pF | 8.8 ns | 27ns | 19 ns | 7.3 ns | 3.6A | 20V | 200V | 42W Tc | 1.5Ohm | P-Channel | 340pF @ 25V | 1.5Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 20nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STB40NF10LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb40nf10lt4-datasheets-4283.pdf | 100V | 40A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 12 Weeks | No SVHC | 33mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 245 | STB40N | 3 | Single | 30 | 150W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 82ns | 24 ns | 64 ns | 40A | 15V | SILICON | SWITCHING | 1.7V | 150W Tc | 100V | N-Channel | 2300pF @ 25V | 33m Ω @ 20A, 10V | 2.5V @ 250μA | 40A Tc | 64nC @ 4.5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||
| CSD18510Q5B | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 950μm | EAR99 | AVALANCHE RATED | not_compliant | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | NO LEAD | 260 | CSD18510 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 156W Tc | 42A | 400A | 0.0016Ohm | 551 pF | N-Channel | 11400pF @ 20V | 0.96m Ω @ 32A, 10V | 2.3V @ 250μA | 300A Tc | 153nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIE820DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie820dft1ge3-datasheets-4394.pdf | 10-PolarPAK® (S) | 4 | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 30A | 12V | SILICON | DRAIN | SWITCHING | 5.2W Ta 104W Tc | 50A | 80A | 0.0035Ohm | 45 mJ | 20V | N-Channel | 4300pF @ 10V | 3.5m Ω @ 18A, 4.5V | 2V @ 250μA | 50A Tc | 143nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| STS26N3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts26n3llh6-datasheets-4225.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 20 Weeks | No SVHC | 4.4mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | DUAL | GULL WING | STS26 | 8 | Single | 2.7W | 1 | FET General Purpose Powers | 17 ns | 18ns | 46 ns | 75 ns | 26A | 20V | SILICON | SWITCHING | 1V | 2.7W Ta | 525 mJ | 30V | N-Channel | 4040pF @ 25V | 1 V | 4.4m Ω @ 13A, 10V | 1V @ 250μA | 26A Tc | 40nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI4842BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4842bdyt1ge3-datasheets-3156.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 4.2mOhm | 8 | yes | EAR99 | Tin | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 20 | 6.25W | 1 | FET General Purpose Powers | Not Qualified | 125 ns | 190ns | 13 ns | 38 ns | 28A | 20V | SILICON | 3W Ta 6.25W Tc | 30V | N-Channel | 3650pF @ 15V | 1.4 V | 4.2m Ω @ 20A, 10V | 3V @ 250μA | 28A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI4421DY-T1-GE3 | Vishay Siliconix | $1.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4421dyt1e3-datasheets-9294.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | 45 ns | 90ns | 170 ns | 350 ns | -14A | 8V | SILICON | SWITCHING | 20V | 20V | -800mV | 1.5W Ta | P-Channel | 8.75m Ω @ 14A, 4.5V | 800mV @ 850μA | 10A Ta | 125nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| R6007JNJGTL | ROHM Semiconductor | $3.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6007jnjgtl-datasheets-4256.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 96W Tc | 7A | 21A | 0.78Ohm | 132 mJ | N-Channel | 475pF @ 100V | 780m Ω @ 3.5A, 15V | 7V @ 1mA | 7A Tc | 17.5nC @ 15V | 15V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ661-DL-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-2sj661dl1e-datasheets-4229.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 Weeks | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 1 | 1.65W | 38A | 20V | 60V | 1.65W Ta 65W Tc | -4V | P-Channel | 4360pF @ 20V | 39m Ω @ 19A, 10V | 38A Ta | 80nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL15N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl15n60m2ep-datasheets-4131.pdf | 8-PowerVDFN | Lead Free | 12 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL15 | NOT SPECIFIED | 7A | 600V | 55W Tc | N-Channel | 590pF @ 100V | 418m Ω @ 4.5A, 10V | 4.75V @ 250μA | 7A Tc | 17nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB050AN06A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp050an06a0-datasheets-3511.pdf | 60V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 9 Weeks | 1.31247g | 5MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 245W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 160ns | 29 ns | 28 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 245W Tc | 470 mJ | 60V | N-Channel | 3900pF @ 25V | 5m Ω @ 80A, 10V | 4V @ 250μA | 18A Ta 80A Tc | 80nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF3808PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf3808pbf-datasheets-4273.pdf | 75V | 140A | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 7Ohm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 330W | 1 | FET General Purpose Power | 16 ns | 140ns | 120 ns | 68 ns | 140A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 330W Tc | TO-220AB | 75A | 550A | 75V | N-Channel | 5310pF @ 25V | 4 V | 7m Ω @ 82A, 10V | 4V @ 250μA | 140A Tc | 220nC @ 10V | 10V | ±20V |
