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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTB35N15T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntb35n15t4g-datasheets-3686.pdf | 150V | 37A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.65mm | 4.83mm | 10.29mm | Lead Free | 2 | 2 Weeks | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 178W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 125ns | 120 ns | 90 ns | 37A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta 178W Tj | 0.05Ohm | 700 mJ | 150V | N-Channel | 3200pF @ 25V | 2.9 V | 50m Ω @ 18.5A, 10V | 4V @ 250μA | 37A Ta | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| FDMC86259P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc86259p-datasheets-3728.pdf | 8-PowerWDFN | 3.4mm | 750μm | 3.4mm | 5 | 20 Weeks | 152.7mg | 8 | ACTIVE (Last Updated: 19 hours ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Other Transistors | S-PDSO-N5 | 12 ns | 3.3ns | 9.6 ns | 22 ns | 13A | 25V | SILICON | DRAIN | SWITCHING | 150V | 2.3W Ta 62W Tc | MO-240BA | 3.2A | 20A | P-Channel | 2045pF @ 75V | 107m Ω @ 3A, 10V | 4V @ 250μA | 3.2A Ta 13A Tc | 32nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||
| TPS1101PWR | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/texasinstruments-tps1101pwr-datasheets-7317.pdf | -15V | -2.18A | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 1.2mm | 4.4mm | Lead Free | 16 | 6 Weeks | 16 | ACTIVE (Last Updated: 5 days ago) | yes | 1mm | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | No | 8542.39.00.01 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | TPS1101 | 16 | 710mW | 1 | Other Transistors | 6.5 ns | 5.5ns | 5.5 ns | 19 ns | 2.18A | 2V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 710mW Ta | 0.19Ohm | 15V | P-Channel | 90m Ω @ 2.5A, 10V | 1.5V @ 250μA | 2.18A Ta | 11.25nC @ 10V | 2.7V 10V | +2V, -15V | ||||||||||||||||||||||||||||||||||
| TN2640K4-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn2640k4g-datasheets-3840.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.1mm | 2 | 7 Weeks | 3.949996g | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | e3 | MATTE TIN | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 4 ns | 15ns | 22 ns | 20 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta | TO-252AA | 0.5A | 5Ohm | 400V | N-Channel | 225pF @ 25V | 5 Ω @ 500mA, 10V | 2V @ 2mA | 500mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STD155N3H6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 3MOhm | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | GULL WING | STD15 | 3 | Single | 110W | 1 | FET General Purpose Powers | R-PSSO-G2 | 20 ns | 90ns | 20 ns | 50 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 2V | 110W Tc | 525 mJ | 30V | N-Channel | 3650pF @ 25V | 3m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 62nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDMS86250 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdms86250-datasheets-3735.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 6 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 96W | 1 | FET General Purpose Power | R-PDSO-F5 | 14 ns | 4.3ns | 4.2 ns | 22 ns | 6.7A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 96W Tc | MO-240AA | 20A | 0.025Ohm | 150V | N-Channel | 2330pF @ 75V | 25m Ω @ 6.7A, 10V | 4V @ 250μA | 6.7A Ta 20A Tc | 36nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDWS9508L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2017 | /files/onsemiconductor-fdws9508lf085-datasheets-3553.pdf | 8-PowerTDFN | 24 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 214W Tj | P-Channel | 4840pF @ 20V | 4.9m Ω @ 80A, 10V | 3V @ 250μA | 80A Tc | 107nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD35N10-26P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud35n1026pe3-datasheets-3743.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 14 Weeks | 1.437803g | 26MOhm | 3 | Tin | unknown | GULL WING | 1 | Single | 1 | R-PSSO-G2 | 10 ns | 10ns | 10 ns | 15 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 100V | 8.3W Ta 83W Tc | TO-252AA | 40A | 55 mJ | N-Channel | 2000pF @ 12V | 26m Ω @ 12A, 10V | 4.4V @ 250μA | 35A Tc | 47nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI7858ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7858adpt1ge3-datasheets-0758.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 2.6mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | FET General Purpose Power | R-PDSO-C5 | 40 ns | 40ns | 70 ns | 140 ns | 29A | 8V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 20A | 60A | 12V | N-Channel | 5700pF @ 6V | 2.6m Ω @ 29A, 4.5V | 1.5V @ 250μA | 20A Ta | 80nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| CSD16407Q5C | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd16407q5c-datasheets-3915.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | No SVHC | 8 | NRND (Last Updated: 4 weeks ago) | 1mm | EAR99 | AVALANCHE RATED | Tin | e3 | DUAL | NO LEAD | 260 | CSD16407 | 8 | Single | NOT SPECIFIED | 3.1W | 1 | FET General Purpose Power | Not Qualified | 11.9 ns | 18.4ns | 9 ns | 16 ns | 100A | 16V | SILICON | DRAIN | SWITCHING | 25V | 25V | 3.1W Ta | 200A | 0.0033Ohm | N-Channel | 2660pF @ 12.5V | 1.6 V | 2.4m Ω @ 25A, 10V | 1.9V @ 250μA | 31A Ta 100A Tc | 18nC @ 4.5V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||
| FDD86367 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdd86367-datasheets-3692.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10 Weeks | 260.37mg | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 80V | 227W Tj | N-Channel | 4840pF @ 40V | 4.2m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 88nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6280 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 5 | 18 Weeks | 8 | EAR99 | DUAL | NOT SPECIFIED | NOT SPECIFIED | 83W | 1 | R-PDSO-F5 | 85A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 7.3W Ta 83W Tc | 230A | N-Channel | 3930pF @ 40V | 4.1m Ω @ 20A, 10V | 3.2V @ 250μA | 17A Ta 85A Tc | 82nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM70N900CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | NOT SPECIFIED | NOT SPECIFIED | 700V | 50W Tc | N-Channel | 482pF @ 100V | 900m Ω @ 1.5A, 10V | 4V @ 250μA | 4.5A Tc | 9.7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7110DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7110dnt1e3-datasheets-6972.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | S-XDSO-C5 | 12 ns | 10ns | 10 ns | 36 ns | 21.1A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 1.5W Ta | 60A | 0.0053Ohm | 20V | N-Channel | 5.3m Ω @ 21.1A, 10V | 2.5V @ 250μA | 13.5A Ta | 21nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPP70N10S312AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb70n10s312atma1-datasheets-4492.pdf | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 17 ns | 8ns | 25 ns | 70A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | 125W Tc | TO-220AB | 280A | 0.0116Ohm | 410 mJ | N-Channel | 4355pF @ 25V | 11.6m Ω @ 70A, 10V | 4V @ 83μA | 70A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI7155DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7155dpt1ge3-datasheets-3485.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 6.25W Ta 104W Tc | P-Channel | 12900pF @ 20V | 3.6mOhm @ 20A, 10V | 2.3V @ 250μA | 31A Ta 100A Tc | 330nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM70060E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum70060ege3-datasheets-3536.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 131A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 375W Tc | 240A | 0.0062Ohm | 125 mJ | N-Channel | 3330pF @ 50V | 5.6m Ω @ 30A, 10V | 4V @ 250μA | 131A Tc | 81nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SQR40N10-25_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqr40n1025ge3-datasheets-3561.pdf | TO-252-4, DPak (3 Leads + Tab) | 12 Weeks | TO-252 (DPAK) Reverse Lead | 100V | 136W Tc | N-Channel | 3380pF @ 25V | 25mOhm @ 40A, 10V | 2.5V @ 250μA | 40A Tc | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD5NM50T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std5nm50t4-datasheets-3427.pdf | 500V | 7.5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 4.535924g | No SVHC | 800mOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | STD5N | 3 | Single | 30 | 100W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 8ns | 6 ns | 7.5A | 30V | SILICON | SWITCHING | 4V | 100W Tc | TO-252AA | 5A | 500V | N-Channel | 415pF @ 25V | 800m Ω @ 2.5A, 10V | 5V @ 250μA | 7.5A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| FDD5670 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-fdd5670-datasheets-3542.pdf | 60V | 52A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 3 | ACTIVE (Last Updated: 10 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 83W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 12ns | 24 ns | 60 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 3.8W Ta 83W Tc | 48A | 60V | N-Channel | 2739pF @ 15V | 15m Ω @ 10A, 10V | 4V @ 250μA | 52A Ta | 73nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FDD2670 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/onsemiconductor-fdd2670-datasheets-3608.pdf | 200V | 3.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 4 Weeks | 260.37mg | No SVHC | 2 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 70mW | 1 | FET General Purpose Power | 13 ns | 8ns | 25 ns | 30 ns | 3.6A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 3.2W Ta 70W Tc | 375 mJ | 200V | N-Channel | 1228pF @ 100V | 4 V | 130m Ω @ 3.6A, 10V | 4.5V @ 250μA | 3.6A Ta | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| STL7N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl7n80k5-datasheets-3575.pdf | 8-PowerVDFN | 6.35mm | 950μm | 5.4mm | Lead Free | 5 | 17 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | DUAL | FLAT | NOT SPECIFIED | STL7 | 1 | Single | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | R-PDSO-F5 | 11.3 ns | 8.3ns | 20.2 ns | 23.7 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | 800V | 42W Tc | N-Channel | 360pF @ 100V | 1.2 Ω @ 3A, 10V | 5V @ 100μA | 3.6A Tc | 13.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STD8N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std8n65m5-datasheets-3673.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 17 Weeks | No SVHC | 600mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD8N | 3 | Single | 30 | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 50 ns | 14ns | 11 ns | 20 ns | 7A | 25V | SILICON | SWITCHING | 4V | 70W Tc | 7A | 28A | 650V | N-Channel | 690pF @ 100V | 600m Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 15nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| STD6N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std6n80k5-datasheets-3682.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.52mm | Lead Free | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | DPAK-0068772_type-E | NOT SPECIFIED | STD6N | 1 | NOT SPECIFIED | 85W | 150°C | 16 ns | 28.5 ns | 4.5A | 30V | 3V | 85W Tc | 800V | N-Channel | 255pF @ 100V | 1.6 Ω @ 2A, 10V | 5V @ 100μA | 4.5A Tc | 7.5nC @ 10V | 10V | 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2266H-EL-E | Renesas Electronics America | $8.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2266hele-datasheets-3689.pdf | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | SINGLE | GULL WING | 5 | 23W | 1 | FET General Purpose Power | R-PSSO-G4 | 10 ns | 15ns | 5.5 ns | 50 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 23W Tc | N-Channel | 3600pF @ 10V | 12m Ω @ 15A, 10V | 2.5V @ 1mA | 30A Ta | 25nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STD2NK100Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp2nk100z-datasheets-3663.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 12 Weeks | No SVHC | 8.5Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | GULL WING | 260 | STD2N | 3 | Single | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.2 ns | 41.5 ns | 1.85A | 30V | SILICON | SWITCHING | 1000V | 3.75V | 70W Tc | TO-252AA | 2A | 7.4A | 1kV | N-Channel | 499pF @ 25V | 8.5 Ω @ 900mA, 10V | 4.5V @ 50μA | 1.85A Tc | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SI4124DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4124dyt1ge3-datasheets-3524.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | 30 ns | 14ns | 11 ns | 38 ns | 13.6A | 20V | SILICON | SWITCHING | 40V | 40V | 2.5W Ta 5.7W Tc | 20.5A | 0.0075Ohm | N-Channel | 3540pF @ 20V | 7.5m Ω @ 14A, 10V | 3V @ 250μA | 20.5A Tc | 77nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTA130N10T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta130n10t-datasheets-0932.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | TO-263 (IXTA) | 5.08nF | 130A | 100V | 360W Tc | N-Channel | 5080pF @ 25V | 9.1mOhm @ 25A, 10V | 4.5V @ 250μA | 130A Tc | 104nC @ 10V | 9.1 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD8N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std8n80k5-datasheets-3376.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 17 Weeks | 950mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | GULL WING | STD8N | Single | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 14ns | 20 ns | 32 ns | 6A | 30V | SILICON | DRAIN | SWITCHING | 110W Tc | 6A | 24A | 800V | N-Channel | 450pF @ 100V | 950m Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 16.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| FCMT250N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcmt250n65s3-datasheets-3302.pdf | 4-PowerTSFN | 33 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | NOT SPECIFIED | NOT SPECIFIED | 650V | 90W Tc | N-Channel | 1010pF @ 400V | 250m Ω @ 6A, 10V | 4.5V @ 1.2mA | 12A Tc | 24nC @ 10V | 10V | ±30V |
