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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| EPC8010 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/epc-epc8010-datasheets-3100.pdf | Die | 12 Weeks | Die | 55pF | 2.7A | 100V | N-Channel | 55pF @ 50V | 160mOhm @ 500mA, 5V | 2.5V @ 250μA | 2.7A Ta | 0.48nC @ 5V | 160 mΩ | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4842BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4842bdyt1ge3-datasheets-3156.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | 125 ns | 190ns | 13 ns | 38 ns | 28A | 20V | SILICON | 30V | 30V | 3W Ta 6.25W Tc | 20A | 0.0042Ohm | N-Channel | 3650pF @ 15V | 4.2m Ω @ 20A, 10V | 3V @ 250μA | 28A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| RSY160P05TL | ROHM Semiconductor | $5.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rsy160p05tl-datasheets-2610.pdf | 3-SMD, Flat Lead | Lead Free | 3 | 50MOhm | 3 | yes | EAR99 | No | DUAL | 3 | Single | 20W | 1 | Other Transistors | 13 ns | 30ns | 105 ns | 90 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 45V | 20W Tc | -45V | P-Channel | 2150pF @ 10V | 50m Ω @ 16A, 10V | 2.5V @ 1mA | 16A Ta | 25.5nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STL90N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl90n10f7-datasheets-2990.pdf | 8-PowerVDFN | 5.4mm | 950μm | 6.35mm | Lead Free | 13 Weeks | 8mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STL90 | 2 | Single | FET General Purpose Power | 19 ns | 32ns | 13 ns | 36 ns | 70A | 20V | 5W Ta 100W Tc | 100V | N-Channel | 3550pF @ 50V | 10.5m Ω @ 8A, 10V | 4V @ 250μA | 70A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4465ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-si4465adyt1ge3-datasheets-7618.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 9mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | Single | 40 | 3W | 1 | Other Transistors | 33 ns | 170ns | 112 ns | 168 ns | -13.7A | 8V | SILICON | 8V | -450mV | 3W Ta 6.5W Tc | 20A | P-Channel | 9m Ω @ 14A, 4.5V | 1V @ 250μA | 85nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| ZXMN3A04KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn3a04ktc-datasheets-2994.pdf&product=diodesincorporated-zxmn3a04ktc-6840950 | 30V | 18.4A | TO-252-3 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 16 Weeks | 3.949996g | No SVHC | 20mOhm | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | 2.15W | GULL WING | 260 | 3 | 1 | Single | 40 | 4.3W | 1 | R-PSSO-G2 | 1.89nF | 5.2 ns | 6.1ns | 20.2 ns | 38.1 ns | 18.4A | 20V | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 66A | 30mOhm | 30V | 20 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| IRFR9024TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9024pbf-datasheets-5404.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 280mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | R-PSSO-G2 | 13 ns | 68ns | 29 ns | 15 ns | -8.8A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 2.5W Ta 42W Tc | P-Channel | 570pF @ 25V | 280m Ω @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TPH4R606NH,L1Q | Toshiba Semiconductor and Storage | $1.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/toshiba-tph4r606nhl1q-datasheets-7136.pdf | 8-PowerVDFN | 12 Weeks | 8 | 8-SOP Advance (5x5) | 3.965nF | 32A | 60V | 1.6W Ta 63W Tc | N-Channel | 3965pF @ 30V | 4.6mOhm @ 16A, 10V | 4V @ 500μA | 32A Ta | 49nC @ 10V | 4.6 mΩ | 6.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSH070P05GZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-rsh070p05tb1-datasheets-9015.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | 8 | EAR99 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 45V | 45V | 2W Ta | 7A | 0.039Ohm | P-Channel | 4100pF @ 10V | 27m Ω @ 7A, 10V | 2.5V @ 1mA | 7A Ta | 47.6nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB380CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb380cprog-datasheets-2884.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 28 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 83W Tc | 9.5A | 28.5A | 0.38Ohm | 64 mJ | N-Channel | 795pF @ 100V | 380m Ω @ 2.85A, 10V | 4V @ 250μA | 9.5A Tc | 19.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6004JNJGTL | ROHM Semiconductor | $2.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6004jnjgtl-datasheets-2876.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 60W Tc | 4A | 12A | 52 mJ | N-Channel | 260pF @ 100V | 1.43 Ω @ 2A, 15V | 7V @ 450μA | 4A Tc | 10.5nC @ 15V | 15V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4488DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4488dyt1e3-datasheets-8822.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.56W | 1 | FET General Purpose Powers | 12 ns | 7ns | 10 ns | 22 ns | 5A | 20V | SILICON | 2V | 1.56W Ta | 0.05Ohm | 150V | N-Channel | 50m Ω @ 5A, 10V | 2V @ 250μA (Min) | 3.5A Ta | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| 2SK326800L | Panasonic Electronic Components | $0.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk326800l-datasheets-2775.pdf | 100V | 15A | TO-252-4, DPak (3 Leads + Tab) | Lead Free | U-DL | 960pF | 15A | 100V | 1W Ta 20W Tc | N-Channel | 960pF @ 10V | 100mOhm @ 12A, 10V | 4V @ 1mA | 15A Tc | 100 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD40151EL-GE3 | Vishay Siliconix | $1.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud40151elge3-datasheets-2921.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252AA | 40V | 50W Tc | P-Channel | 5340pF @ 20V | 12mOhm @ 17.5A, 10V | 2.5V @ 250μA | 42A Tc | 112nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS86140 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-fds86140-datasheets-2841.pdf | 8-SOIC (0.154, 3.90mm Width) | 4mm | 1.5mm | 5mm | Lead Free | 8 | 9 Weeks | 130mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 5W | 1 | FET General Purpose Power | 13.7 ns | 5.6ns | 4.8 ns | 23 ns | 11.2A | 20V | SILICON | SWITCHING | 2.7V | 2.5W Ta 5W Tc | 30 pF | 100V | N-Channel | 2580pF @ 50V | 2.7 V | 9.8m Ω @ 11.2A, 10V | 4V @ 250μA | 11.2A Ta | 41nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TPC8048-H(TE12L,Q) | Toshiba Semiconductor and Storage | $6.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | No | 1.9W | 1 | 3.7ns | 7.6 ns | 16A | 20V | 60V | 1W Ta | N-Channel | 7540pF @ 10V | 6.9m Ω @ 8A, 10V | 2.3V @ 1mA | 16A Ta | 87nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL130N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl130n6f7-datasheets-2745.pdf | 8-PowerVDFN | Lead Free | 5 | 22 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | DUAL | FLAT | NOT SPECIFIED | STL130 | NOT SPECIFIED | 1 | R-PDSO-F5 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 4.8W Ta 125W Tc | 520A | 0.0035Ohm | N-Channel | 2600pF @ 25V | 3.5m Ω @ 13A, 10V | 4V @ 250μA | 130A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL640STRLPBF | Vishay Siliconix | $1.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irl640strlpbf-datasheets-2956.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 180mOhm | 3 | Tin | No | 17A | 200V | 1 | Single | 3.1W | 1 | D2PAK | 4.39nF | 8 ns | 83ns | 52 ns | 44 ns | 17A | 10V | 200V | 3.1W Ta 125W Tc | 180mOhm | 200V | N-Channel | 1800pF @ 25V | 180mOhm @ 10A, 5V | 2V @ 250μA | 17A Tc | 66nC @ 5V | 2.7 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| STD60NF55LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std60nf55lt4-datasheets-2960.pdf | 55V | 60A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD60N | 3 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 180ns | 35 ns | 80 ns | 30A | 15V | 55V | SILICON | DRAIN | SWITCHING | 2V | 100W Tc | TO-252AA | 240A | 400 mJ | 55V | N-Channel | 1950pF @ 25V | 2 V | 15m Ω @ 30A, 10V | 2V @ 250μA | 60A Tc | 56nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||
| CSD17501Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 16 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD17501 | 8 | Single | 3.2W | 1 | FET General Purpose Power | 10.4 ns | 17ns | 7.9 ns | 18 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 3.2W Ta | 0.0037Ohm | 405 mJ | 30V | N-Channel | 2630pF @ 15V | 2.9m Ω @ 25A, 10V | 1.8V @ 250μA | 100A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STD8NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std8nm50n-datasheets-2752.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 16 Weeks | No SVHC | 790mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 260 | STD8N | 3 | 45W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 4.4ns | 8.8 ns | 25 ns | 5A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3V | 45W Tc | 5A | 20A | 500V | N-Channel | 364pF @ 50V | 790m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 14nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| SIR158DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sir158dpt1re3-datasheets-9659.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 1.8MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 5.4W | 1 | FET General Purpose Power | R-PDSO-C5 | 28 ns | 36ns | 16 ns | 47 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5.4W Ta 83W Tc | 60A | 30V | N-Channel | 4980pF @ 15V | 1.8m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 130nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| RS1G300GNTB | ROHM Semiconductor | $6.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | 8-PowerTDFN | 5 | 20 Weeks | 8 | EAR99 | not_compliant | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3W Ta 35W Tc | 120A | 0.003Ohm | 136 mJ | N-Channel | 4230pF @ 20V | 2.5m Ω @ 30A, 10V | 2.5V @ 1mA | 30A Ta | 56.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQA410EJ-T1_GE3 | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqa410ejt1ge3-datasheets-2530.pdf | PowerPAK® SC-70-6 | 12 Weeks | PowerPAK® SC-70-6 Single | 20V | 13.6W Tc | N-Channel | 485pF @ 10V | 28mOhm @ 5A, 4.5V | 1.1V @ 250μA | 7.8A Tc | 8nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H072LFDFQ-7 | Diodes Incorporated | $0.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt10h072lfdfq7-datasheets-2583.pdf | 6-UDFN Exposed Pad | 18 Weeks | 100V | 1.8W Ta | N-Channel | 228pF @ 50V | 62m Ω @ 4.5A, 10V | 3V @ 250μA | 4A Ta | 4.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ3E180GNTB | ROHM Semiconductor | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 8-PowerVDFN | 5 | 20 Weeks | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PDSO-F5 | 16.5 ns | 6.9ns | 10.2 ns | 56.8 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 72A | 0.0055Ohm | 30V | N-Channel | 1520pF @ 15V | 4.3m Ω @ 18A, 10V | 2.5V @ 1mA | 18A Ta | 22.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7464DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7464dpt1e3-datasheets-2721.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | Single | 1.8W | 1 | R-PDSO-F5 | 10 ns | 12ns | 12 ns | 15 ns | 2.8A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 8A | 0.24Ohm | 0.45 mJ | 200V | N-Channel | 50ns | 35ns | 4 V | 240m Ω @ 2.8A, 10V | 4V @ 250μA | 1.8A Ta | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI7898DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7898dpt1e3-datasheets-9418.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 85mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 9 ns | 10ns | 10 ns | 24 ns | 3A | 20V | 150V | SILICON | DRAIN | SWITCHING | 4V | 1.9W Ta | 3A | 25A | 150V | N-Channel | 4 V | 85m Ω @ 3.5A, 10V | 4V @ 250μA | 3A Ta | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NTMD4184PFR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-ntmd4184pfr2g-datasheets-2651.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 38 Weeks | 8 | ACTIVE (Last Updated: 9 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | 8 | 2.31W | 1 | Other Transistors | 7.2 ns | 12ns | 2.8 ns | 18 ns | 2.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 770mW Ta | 4A | 0.095Ohm | -30V | P-Channel | 360pF @ 10V | 95m Ω @ 3A, 10V | 3V @ 250μA | 2.3A Ta | 4.2nC @ 4.5V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIR626DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sir626dpt1re3-datasheets-2749.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | EAR99 | unknown | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 104W Tc | 100A | 200A | 0.002Ohm | 125 mJ | N-Channel | 5130pF @ 30V | 78ns | 88ns | 1.7m Ω @ 20A, 10V | 3.4V @ 250μA | 100A Tc | 78nC @ 7.5V | 6V 10V | ±20V |
