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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| CSD17556Q5B |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd17556q5b-datasheets-7407.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 6 Weeks | Unknown | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 950μm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD17556 | Single | NOT SPECIFIED | 3.1W | 1 | FET General Purpose Powers | 14 ns | 26ns | 12 ns | 27 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.4V | 3.1W Ta 191W Tc | 34A | 500 mJ | N-Channel | 7020pF @ 15V | 1.4m Ω @ 40A, 10V | 1.65V @ 250μA | 34A Ta 100A Tc | 39nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| FCB11N60TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fcb11n60tm-datasheets-4329.pdf | 600V | 11A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 12 Weeks | 1.31247g | No SVHC | 380MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | FCB11N60 | Single | 125W | 1 | FET General Purpose Power | R-PSSO-G2 | 34 ns | 98ns | 56 ns | 119 ns | 11A | 30V | SILICON | DRAIN | SWITCHING | 5V | 125W Tc | 600V | N-Channel | 1490pF @ 25V | 5 V | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 52nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| RS1E350GNTB | ROHM Semiconductor | $6.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rs1e350gntb-datasheets-4088.pdf | 8-PowerTDFN | 5 | 16 Weeks | EAR99 | not_compliant | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta | 35A | 140A | 0.002Ohm | N-Channel | 4060pF @ 15V | 1.7m Ω @ 35A, 10V | 2.5V @ 1mA | 35A Ta 80A Tc | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STD100NH02LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std100nh02lt4-datasheets-4073.pdf | 24V | 60A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4.8mOhm | EAR99 | LOW THRESHOLD | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 260 | STD10 | 3 | Single | 30 | 100W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 200ns | 35 ns | 60 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 100W Tc | 240A | 800 mJ | 24V | N-Channel | 3940pF @ 15V | 4.8m Ω @ 30A, 10V | 1.8V @ 250μA | 60A Tc | 84nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| CSD17312Q5 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Gold | No | e3 | Matte Tin (Sn) | DUAL | 260 | CSD17312 | 8 | Single | 3.2W | 1 | FET General Purpose Power | 9.5 ns | 27ns | 23 ns | 35 ns | 100A | 10V | SILICON | DRAIN | SWITCHING | 1.1V | 3.2W Ta | 200A | 0.0024Ohm | 30V | N-Channel | 5240pF @ 15V | 1.5m Ω @ 35A, 8V | 1.5V @ 250μA | 38A Ta 100A Tc | 36nC @ 4.5V | 3V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||
| IRLR7833 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr7833-datasheets-4198.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 245 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 140W Tc | TO-252AA | 30A | 560A | 0.0045Ohm | 530 mJ | N-Channel | 4010pF @ 15V | 4.5m Ω @ 15A, 10V | 2.3V @ 250μA | 140A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| RSJ400N06TL | ROHM Semiconductor | $9.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rsj400n06tl-datasheets-4206.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | EAR99 | No | SINGLE | GULL WING | 3 | 1 | 1 | R-PSSO-G2 | 20 ns | 60ns | 140 ns | 90 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50W Tc | 80A | 60V | N-Channel | 2400pF @ 10V | 16m Ω @ 40A, 10V | 3V @ 1mA | 40A Ta | 52nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| RJK0855DPB-00#J5 | Renesas Electronics America | $3.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk0855dpb00j5-datasheets-4170.pdf | SC-100, SOT-669 | Lead Free | 16 Weeks | 5 | yes | No | 5 | 30A | 80V | 60W Tc | N-Channel | 2550pF @ 10V | 11m Ω @ 15A, 10V | 30A Ta | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1405ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/infineontechnologies-irf1405zlpbf-datasheets-4233.pdf | 55V | 75A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 4.9MOhm | 3 | No | 230W | 1 | 18 ns | 110ns | 82 ns | 48 ns | 75A | 20V | 230W Tc | 55V | N-Channel | 4780pF @ 25V | 4.9m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS030N06B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdms030n06b-datasheets-4147.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 6.25mm | Lead Free | 5 | 6 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 104W | 1 | FET General Purpose Power | R-PDSO-F5 | 39 ns | 20ns | 16 ns | 52 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 104W Tc | MO-240AA | 22.1A | 400A | 0.003Ohm | 60V | N-Channel | 7560pF @ 30V | 3m Ω @ 50A, 10V | 4.5V @ 250μA | 22.1A Ta 100A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| 2SJ661-DL-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-2sj661dl1e-datasheets-4229.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 Weeks | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 1 | 1.65W | 38A | 20V | 60V | 1.65W Ta 65W Tc | -4V | P-Channel | 4360pF @ 20V | 39m Ω @ 19A, 10V | 38A Ta | 80nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RS1L180GNTB | ROHM Semiconductor | $4.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rs1l180gntb-datasheets-4041.pdf | 8-PowerTDFN | 5 | 16 Weeks | not_compliant | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3W Ta | 18A | 72A | 0.0085Ohm | 50 mJ | N-Channel | 3230pF @ 30V | 5.6m Ω @ 18A, 10V | 2.5V @ 100μA | 18A Ta 68A Tc | 63nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| R6006JNJGTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-r6006jnjgtl-datasheets-4043.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 86W Tc | 6A | 18A | 0.936Ohm | 117 mJ | N-Channel | 410pF @ 100V | 936m Ω @ 3A, 15V | 7V @ 800μA | 6A Tc | 15.5nC @ 15V | 15V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL120N8F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl120n8f7-datasheets-3933.pdf | 8-PowerVDFN | Lead Free | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STL120 | NOT SPECIFIED | 120A | 80V | 4.8W Ta 140W Tc | N-Channel | 4570pF @ 25V | 4.4m Ω @ 11.5A, 10V | 4V @ 250μA | 120A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL9N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl9n60m2-datasheets-4049.pdf | 8-PowerVDFN | Lead Free | 26 Weeks | 760mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL9 | 1 | Single | NOT SPECIFIED | 8.8 ns | 7.5ns | 13.5 ns | 22 ns | 4.8A | 25V | 48W Tc | 600V | N-Channel | 320pF @ 100V | 860m Ω @ 2.4A, 10V | 4V @ 250μA | 4.8A Tc | 10nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RD3L08BGNTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rd3l08bgntl-datasheets-4022.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 119W Tc | 80A | 160A | 0.0055Ohm | 60 mJ | N-Channel | 3620pF @ 30V | 5.5m Ω @ 80A, 10V | 2.5V @ 100μA | 80A Tc | 71nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMYS1D2N04CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmys1d2n04cltwg-datasheets-4001.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.9W Ta 134W Tc | N-Channel | 6330pF @ 20V | 1.2m Ω @ 50A, 10V | 2V @ 180μA | 44A Ta 258A Tc | 109nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC86160ET100 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc86160et100-datasheets-4090.pdf | 8-PowerWDFN | Lead Free | 5 | 11 Weeks | 152.7mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | DUAL | NO LEAD | 260 | Single | NOT SPECIFIED | 1 | S-PDSO-N5 | 9.7 ns | 3.6ns | 3.4 ns | 16 ns | 43A | 20V | SILICON | DRAIN | SWITCHING | 2.8W Ta 65W Tc | MO-240BA | 9A | 204A | 0.014Ohm | 100V | N-Channel | 1290pF @ 50V | 14m Ω @ 9A, 10V | 4V @ 250μA | 9A Ta 43A Tc | 22nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI4866DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4866dyt1e3-datasheets-3926.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 5.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 8 | 1 | Single | 1.6W | 1 | 28 ns | 32ns | 35 ns | 82 ns | 17A | 8V | SILICON | SWITCHING | 1.6W Ta | 12V | N-Channel | 600 mV | 5.5m Ω @ 17A, 4.5V | 600mV @ 250μA (Min) | 11A Ta | 30nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| IPP50R299CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp50r299cpxksa1-datasheets-3948.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 104W | 1 | Not Qualified | 35 ns | 14ns | 12 ns | 80 ns | 12A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 550V | 104W Tc | TO-220AB | 26A | 0.299Ohm | 289 mJ | 500V | N-Channel | 1190pF @ 100V | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 12A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SQJ412EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj412ept1ge3-datasheets-3855.pdf | PowerPAK® SO-8 | 12 Weeks | 506.605978mg | Unknown | 8 | No | 1 | Single | 83W | 1 | PowerPAK® SO-8 | 5.95nF | 45 ns | 150ns | 55 ns | 50 ns | 32A | 20V | 40V | 2V | 83W Tc | 4.5mOhm | N-Channel | 5950pF @ 20V | 2 V | 4.1mOhm @ 10.3A, 10V | 2.5V @ 250μA | 32A Tc | 120nC @ 10V | 4.1 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI7116DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7116dnt1e3-datasheets-0566.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 7.8MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 36 ns | 10.5A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 1.5W Ta | 60A | N-Channel | 7.8m Ω @ 16.4A, 10V | 2.5V @ 250μA | 10.5A Ta | 23nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| STL16N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stm32f407iet6-datasheets-2000.pdf | 8-PowerVDFN | 26 Weeks | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STL16 | NOT SPECIFIED | 8A | 600V | 52W Tc | N-Channel | 704pF @ 100V | 355m Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 19nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM70060EL_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqm70060elge3-datasheets-3982.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 166W Tc | 67A | 180A | 0.0059Ohm | 180 mJ | N-Channel | 5500pF @ 25V | 5.9m Ω @ 30A, 10V | 2.5V @ 250μA | 75A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMJS1D3N04CTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-PowerSMD, Gull Wing | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.8W Ta 128W Tc | N-Channel | 4300pF @ 25V | 1.3m Ω @ 50A, 10V | 3.5V @ 170μA | 41A Ta 235A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RRH140P03GZETB | ROHM Semiconductor | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8 | 1 | 32 ns | 80ns | 200 ns | 360 ns | 14A | 20V | 30V | 650mW Ta | -30V | P-Channel | 8000pF @ 10V | 7m Ω @ 14A, 10V | 2.5V @ 1mA | 14A Ta | 150nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMYS1D3N04CTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmys1d3n04ctwg-datasheets-4014.pdf | SC-100, SOT-669 | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN2640K4-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn2640k4g-datasheets-3840.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.1mm | 2 | 7 Weeks | 3.949996g | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | e3 | MATTE TIN | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 4 ns | 15ns | 22 ns | 20 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta | TO-252AA | 0.5A | 5Ohm | 400V | N-Channel | 225pF @ 25V | 5 Ω @ 500mA, 10V | 2V @ 2mA | 500mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STD155N3H6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 3MOhm | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | GULL WING | STD15 | 3 | Single | 110W | 1 | FET General Purpose Powers | R-PSSO-G2 | 20 ns | 90ns | 20 ns | 50 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 2V | 110W Tc | 525 mJ | 30V | N-Channel | 3650pF @ 25V | 3m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 62nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDMS86250 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdms86250-datasheets-3735.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 6 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 96W | 1 | FET General Purpose Power | R-PDSO-F5 | 14 ns | 4.3ns | 4.2 ns | 22 ns | 6.7A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 96W Tc | MO-240AA | 20A | 0.025Ohm | 150V | N-Channel | 2330pF @ 75V | 25m Ω @ 6.7A, 10V | 4V @ 250μA | 6.7A Ta 20A Tc | 36nC @ 10V | 6V 10V | ±20V |
