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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQT4N20LTF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqt4n20ltf-datasheets-2181.pdf | 200V | 850mA | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 3.56mm | Lead Free | 4 | 18 Weeks | 188mg | No SVHC | 1.35Ohm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | not_compliant | e3 | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 2.2W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 7 ns | 70ns | 40 ns | 15 ns | 850mA | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.2W Tc | 0.85A | 52 mJ | 200V | N-Channel | 310pF @ 25V | 1.35 Ω @ 425mA, 10V | 2V @ 250μA | 850mA Tc | 5.2nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||
| CSD25211W1015 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | -0.8 | ROHS3 Compliant | 6-UFBGA, DSBGA | 1.5mm | 1mm | 1.8mm | Lead Free | 12 Weeks | 6 | ACTIVE (Last Updated: 4 days ago) | yes | 2mm | EAR99 | Copper, Silver, Tin | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | CSD25211 | Single | 1W | 1 | Other Transistors | 13.6 ns | 8.8ns | 14.2 ns | 36.9 ns | 3.2A | -6V | 20V | 1W Ta | -20V | P-Channel | 570pF @ 10V | 33m Ω @ 1.5A, 4.5V | 1.1V @ 250μA | 3.2A Ta | 4.1nC @ 4.5V | 2.5V 4.5V | ||||||||||||||||||||||||||||||||||||||||||||
| DMP4047SK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp4047sk313-datasheets-2171.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.6W Ta | 40A | 0.045Ohm | 16 mJ | P-Channel | 1328pF @ 20V | 45m Ω @ 4.4A, 10V | 3V @ 250μA | 20A Tc | 23.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AO4411 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | 8 | EAR99 | DUAL | GULL WING | 8 | 1 | Not Qualified | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3.1W Ta | 8A | 0.032Ohm | 135 pF | P-Channel | 760pF @ 15V | 32m Ω @ 8A, 10V | 2.4V @ 250μA | 8A Ta | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSL020P03FRATR | ROHM Semiconductor | $0.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | 6-SMD, Flat Leads | 6 | 16 Weeks | Unknown | 6 | EAR99 | not_compliant | YES | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | -2A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | -2.5V | 1W Ta | 2A | 0.12Ohm | P-Channel | 350pF @ 10V | 120m Ω @ 2A, 10V | 2.5V @ 1mA | 2A Ta | 3.9nC @ 5V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CEDM7004 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cedm7004trpbfree-datasheets-1925.pdf | SC-101, SOT-883 | 24 Weeks | YES | FET General Purpose Power | Single | 30V | 100mW Ta | 1.78A | N-Channel | 43pF @ 25V | 460m Ω @ 200mA, 4.5V | 1V @ 250μA | 1.78A Ta | 0.79nC @ 4.5V | 1.8V 4.5V | 8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN11003NL,LQ | Toshiba Semiconductor and Storage | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | No | 1 | 8-TSON Advance (3.3x3.3) | 660pF | 7.5 ns | 2.1ns | 1.9 ns | 14 ns | 11A | 20V | 30V | 700mW Ta 19W Tc | 12.6mOhm | 30V | N-Channel | 660pF @ 15V | 11mOhm @ 5.5A, 10V | 2.3V @ 100μA | 11A Tc | 7.5nC @ 10V | 11 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS0312S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms0312s-datasheets-2165.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 26 Weeks | 74mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-F5 | 12 ns | 5ns | 4 ns | 28 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 46W Tc | MO-240AA | 90A | 0.0044Ohm | 60 mJ | 30V | N-Channel | 2820pF @ 15V | 4.9m Ω @ 18A, 10V | 3V @ 1mA | 19A Ta 42A Tc | 46nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| RQ6E050AJTCR | ROHM Semiconductor | $0.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/rohmsemiconductor-rq6e050ajtcr-datasheets-1938.pdf | SOT-23-6 Thin, TSOT-23-6 | 16 Weeks | EAR99 | not_compliant | 30V | 950mW Ta | N-Channel | 520pF @ 15V | 35m Ω @ 5A, 4.5V | 1.5V @ 1mA | 5A Ta | 4.7nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB406EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sib406edkt1ge3-datasheets-1256.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | 3 | 14 Weeks | 95.991485mg | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | 40 | 1.95W | 1 | FET General Purpose Powers | S-XDSO-N3 | 5 ns | 12ns | 12 ns | 15 ns | 5.1A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.95W Ta 10W Tc | 6A | 20V | N-Channel | 350pF @ 10V | 46m Ω @ 3.9A, 4.5V | 1.4V @ 250μA | 6A Tc | 12nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| SSN1N45BTA | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-ssn1n45bta-datasheets-2035.pdf | 450V | 500mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Lead Free | 3 | 30 Weeks | 240mg | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | BOTTOM | Single | 900mW | 1 | FET General Purpose Power | 7.5 ns | 21ns | 21 ns | 23 ns | 500mA | 50V | SILICON | SWITCHING | 900mW Ta | 0.5A | 8.5 pF | 450V | N-Channel | 240pF @ 25V | 4.25 Ω @ 250mA, 10V | 3.7V @ 250μA | 500mA Tc | 8.5nC @ 10V | 10V | ±50V | |||||||||||||||||||||||||||||||||||||||||
| NTHS5443T1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-nths5443t1g-datasheets-1976.pdf | -20V | -3.6A | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 2 Weeks | 8 | ACTIVE (Last Updated: 18 hours ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Other Transistors | 8.5 ns | 14ns | 14 ns | 38 ns | 4.9A | 12V | SILICON | SWITCHING | 20V | 1.3W Ta | 0.065Ohm | -20V | P-Channel | 65m Ω @ 3.6A, 4.5V | 600mV @ 250μA | 3.6A Ta | 12nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| NVTFS4C25NWFTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvtfs4c25ntag-datasheets-3303.pdf | 8-PowerWDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 15 hours ago) | yes | not_compliant | e3 | Tin (Sn) | FET General Purpose Power | 22.1A | Single | 30V | 3W Ta 14.3W Tc | N-Channel | 500pF @ 15V | 17m Ω @ 10A, 10V | 2.2V @ 250μA | 10.1A Ta 22.1A Tc | 10.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6368 | Alpha & Omega Semiconductor Inc. | $1.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 16 Weeks | 8-DFN (5x6) | 820pF | 52A | 30V | 6.2W Ta 27W Tc | N-Channel | 820pF @ 15V | 6.1mOhm @ 20A, 10V | 2.2V @ 250μA | 25A Ta 52A Tc | 13nC @ 10V | 6.1 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMA291P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdma291p-datasheets-2071.pdf | -20V | -6.6A | 6-VDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 16 Weeks | 30mg | No SVHC | 42MOhm | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Gold | e4 | DUAL | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 2.4W | 1 | Other Transistors | Not Qualified | 13 ns | 9ns | 25 ns | 42 ns | -6.6A | 8V | -20V | SILICON | DRAIN | SWITCHING | 20V | -700mV | 2.4W Ta | -20V | P-Channel | 1000pF @ 10V | -700 mV | 42m Ω @ 6.6A, 4.5V | 1V @ 250μA | 6.6A Ta | 14nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||
| SSM6J503NU,LF | Toshiba Semiconductor and Storage | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | 6-WDFN Exposed Pad | 16 Weeks | 6 | 1W | 1 | 6A | 8V | 20V | 1W Ta | -20V | P-Channel | 840pF @ 10V | 32.4m Ω @ 3A, 4.5V | 1V @ 1mA | 6A Ta | 12.8nC @ 10V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17313Q2T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 6-WDFN Exposed Pad | 2mm | 2mm | Lead Free | 6 | 6 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 3 days ago) | yes | 750μm | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | CSD17313 | Single | 1 | 5A | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.3V | 2.4W Ta 17W Tc | 5A | 57A | 0.042Ohm | 17 pF | 18 mJ | N-Channel | 340pF @ 15V | 30m Ω @ 4A, 8V | 1.8V @ 250μA | 5A Ta | 2.7nC @ 4.5V | 3V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||||||
| DMTH6016LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmth6016lps13-datasheets-2098.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 37.1A | 60V | 3W Ta 37.5W Tc | N-Channel | 864pF @ 30V | 16m Ω @ 20A, 10V | 2.5V @ 250μA | 10.6A Ta 37.1A Tc | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7698 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdms7698-datasheets-2127.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 26 Weeks | 74mg | No SVHC | 8 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 29W | 1 | FET General Purpose Power | R-PDSO-F5 | 9 ns | 3ns | 3 ns | 20 ns | 22A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.5W Ta 29W Tc | MO-240AA | 50A | 29 mJ | 30V | N-Channel | 1605pF @ 15V | 2 V | 10m Ω @ 13.5A, 10V | 3V @ 250μA | 13.5A Ta 22A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| DMP45H21DHE-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp45h21dhe13-datasheets-2161.pdf | TO-261-4, TO-261AA | 23 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 450V | 12.5W Tc | P-Channel | 1003pF @ 25V | 21 Ω @ 300mA, 10V | 5V @ 250μA | 600mA Tc | 4.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM230N06PQ56 RLG | Taiwan Semiconductor Corporation | $4.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm230n06pq56rlg-datasheets-1420.pdf | 8-PowerTDFN | 32 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 83W Tc | N-Channel | 1680pF @ 20V | 23m Ω @ 20A, 10V | 2.5V @ 250μA | 44A Tc | 28nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J207FE,LF | Toshiba Semiconductor and Storage | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | 6 | No | 1 | 15 ns | 14 ns | 1.4A | 20V | 30V | 500mW Ta | P-Channel | 137pF @ 15V | 251m Ω @ 650mA, 10V | 2.6V @ 1mA | 1.4A Ta | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8457DB-T1-E1 | Vishay Siliconix | $2.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8457dbt1e1-datasheets-2199.pdf | 4-UFBGA | 21 Weeks | Unknown | 15mOhm | 4 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | -10.2A | 12V | -900mV | 1.1W Ta 2.7W Tc | P-Channel | 2900pF @ 6V | 19m Ω @ 3A, 4.5V | 700mV @ 250μA | 93nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2028USS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmn2028uss13-datasheets-2001.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 16 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | ESD PROTECTION, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.56W | 1 | FET General Purpose Powers | 11.67 ns | 12.49ns | 12.33 ns | 35.89 ns | 9.8A | 12V | SILICON | SWITCHING | 1V | 1.56W Ta | 5.6A | 0.02Ohm | 20V | N-Channel | 1000pF @ 10V | 20m Ω @ 9.4A, 4.5V | 1.3V @ 250μA | 7.3A Ta | 11.6nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| RF4E110BNTR | ROHM Semiconductor | $0.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rf4e110bntr-datasheets-1721.pdf | 8-PowerUDFN | Lead Free | 6 | 20 Weeks | 8 | EAR99 | not_compliant | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | S-PDSO-N6 | 14 ns | 12ns | 11 ns | 43 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 2W Ta | 44A | N-Channel | 1200pF @ 15V | 11.1m Ω @ 11A, 10V | 2V @ 250μA | 11A Ta | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| ZXMN2A01E6TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxt10n50de6ta-datasheets-6757.pdf | 20V | 2.5A | SOT-23-6 | 3.1mm | 1.3mm | 1.8mm | Lead Free | 6 | 17 Weeks | 14.996898mg | No SVHC | 120mOhm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.7W | 1 | FET General Purpose Power | 2.49 ns | 5.21ns | 5.21 ns | 7.47 ns | 3.1A | 12V | SILICON | SWITCHING | 1.1W Ta | 20V | N-Channel | 303pF @ 15V | 120m Ω @ 4A, 4.5V | 700mV @ 250μA | 2.5A Ta | 3nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||
| SI2329DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si2329dst1ge3-datasheets-1767.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | 30 | 1.25W | 1 | Other Transistors | 150°C | 20 ns | 22ns | 20 ns | 46 ns | -5.3A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 8V | -350mV | 2.5W Tc | 6A | -8V | P-Channel | 1485pF @ 4V | 30m Ω @ 5.3A, 4.5V | 800mV @ 250μA | 6A Tc | 29nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||
| SI5419DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si5419dut1ge3-datasheets-1876.pdf | 8-PowerVDFN | 3mm | 750μm | 1.9mm | Lead Free | 3 | 14 Weeks | 20MOhm | 8 | EAR99 | e3 | MATTE TIN | DUAL | NO LEAD | 260 | 8 | 1 | Single | 40 | 3.1W | 1 | Not Qualified | R-XDSO-N3 | 10 ns | 10ns | 12 ns | 40 ns | 9.9A | 20V | SILICON | DRAIN | SWITCHING | 30V | 3.1W Ta 31W Tc | 40A | -30V | P-Channel | 1400pF @ 15V | 20m Ω @ 6.6A, 10V | 2.5V @ 250μA | 12A Tc | 45nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| RS1E150GNTB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/rohmsemiconductor-rs1e150gntb-datasheets-1774.pdf | 8-PowerTDFN | 5 | 20 Weeks | EAR99 | not_compliant | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta 22.9W Tc | 15A | 60A | 0.0114Ohm | N-Channel | 590pF @ 15V | 8.8m Ω @ 15A, 10V | 2.5V @ 1mA | 15A Ta | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C423NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-nvmfs5c423nlt1g-datasheets-1851.pdf | 8-PowerTDFN | Lead Free | 38 Weeks | No SVHC | 8 | ACTIVE, NOT REC (Last Updated: 13 hours ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 12 ns | 72ns | 8.4 ns | 28 ns | 150A | 20V | 40V | 2V | 3.7W Ta 83W Tc | N-Channel | 3100pF @ 20V | 2m Ω @ 50A, 10V | 2V @ 250μA | 50nC @ 10V | 4.5V 10V | ±20V |
