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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TPN11003NL,LQ | Toshiba Semiconductor and Storage | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | No | 1 | 8-TSON Advance (3.3x3.3) | 660pF | 7.5 ns | 2.1ns | 1.9 ns | 14 ns | 11A | 20V | 30V | 700mW Ta 19W Tc | 12.6mOhm | 30V | N-Channel | 660pF @ 15V | 11mOhm @ 5.5A, 10V | 2.3V @ 100μA | 11A Tc | 7.5nC @ 10V | 11 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS0312S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms0312s-datasheets-2165.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 26 Weeks | 74mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-F5 | 12 ns | 5ns | 4 ns | 28 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 46W Tc | MO-240AA | 90A | 0.0044Ohm | 60 mJ | 30V | N-Channel | 2820pF @ 15V | 4.9m Ω @ 18A, 10V | 3V @ 1mA | 19A Ta 42A Tc | 46nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FQT2P25TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqt2p25tf-datasheets-2218.pdf | -250V | -550mA | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 4 | 10 Weeks | 188mg | 4 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 8.5 ns | 40ns | 25 ns | 12 ns | 550mA | 30V | SILICON | DRAIN | SWITCHING | 250V | 2.5W Tc | 0.55A | 2.2A | 4Ohm | -250V | P-Channel | 250pF @ 25V | 4 Ω @ 275mA, 10V | 5V @ 250μA | 550mA Tc | 8.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| NVMFS5832NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfs5832nlt1g-datasheets-2234.pdf | Lead Free | 5 | 38 Weeks | 5 | ACTIVE, NOT REC (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | Halogen Free | YES | 3.7W | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 3.7W | 1 | FET General Purpose Power | 2.7nF | 13 ns | 24ns | 8 ns | 27 ns | 21A | 20V | DRAIN | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 0.0072Ohm | 4.2 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM4424CS RVG | Taiwan Semiconductor Corporation | $1.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm4424csrvg-datasheets-1983.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8-SOP | 20V | 2.5W Ta | N-Channel | 500pF @ 10V | 30mOhm @ 4.5A, 4.5V | 1V @ 250μA | 8A Tc | 11.2nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RTQ035N03HZGTR | ROHM Semiconductor | $0.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | 8 Weeks | 30V | 950mW Ta | N-Channel | 285pF @ 10V | 54m Ω @ 3.5A, 4.5V | 1.5V @ 1mA | 3.5A Ta | 6.4nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD25202W15 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 9-UFBGA, DSBGA | 1.75mm | 625μm | 1.75mm | Lead Free | 9 | 8 Weeks | 9 | ACTIVE (Last Updated: 5 days ago) | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | CSD25202 | Single | NOT SPECIFIED | 1 | 15 ns | 12ns | 28 ns | 64 ns | 4A | -6V | SILICON | SWITCHING | 20V | 20V | 500mW Ta | 4A | 0.052Ohm | 27 pF | P-Channel | 1010pF @ 10V | 26m Ω @ 2A, 4.5V | 1.05V @ 250μA | 4A Ta | 7.5nC @ 4.5V | 1.8V 4.5V | ||||||||||||||||||||||||||||||||||||||||||||
| NVTFS5124PLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvtfs5124pltag-datasheets-4840.pdf | 8-PowerWDFN | 3.15mm | 750μm | 3.15mm | Lead Free | 5 | 18 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | NOT SPECIFIED | 8 | 1 | Single | NOT SPECIFIED | 3W | 1 | Other Transistors | R-PDSO-F5 | 7 ns | 14ns | 10 ns | 13 ns | 2.4A | 20V | SILICON | DRAIN | 60V | 3W Ta 18W Tc | 6A | 24A | -60V | P-Channel | 250pF @ 25V | 260m Ω @ 3A, 10V | 2.5V @ 250μA | 2.4A Ta | 6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FDMA291P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdma291p-datasheets-2071.pdf | -20V | -6.6A | 6-VDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 16 Weeks | 30mg | No SVHC | 42MOhm | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Gold | e4 | DUAL | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 2.4W | 1 | Other Transistors | Not Qualified | 13 ns | 9ns | 25 ns | 42 ns | -6.6A | 8V | -20V | SILICON | DRAIN | SWITCHING | 20V | -700mV | 2.4W Ta | -20V | P-Channel | 1000pF @ 10V | -700 mV | 42m Ω @ 6.6A, 4.5V | 1V @ 250μA | 6.6A Ta | 14nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SSM6J503NU,LF | Toshiba Semiconductor and Storage | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | 6-WDFN Exposed Pad | 16 Weeks | 6 | 1W | 1 | 6A | 8V | 20V | 1W Ta | -20V | P-Channel | 840pF @ 10V | 32.4m Ω @ 3A, 4.5V | 1V @ 1mA | 6A Ta | 12.8nC @ 10V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17313Q2T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 6-WDFN Exposed Pad | 2mm | 2mm | Lead Free | 6 | 6 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 3 days ago) | yes | 750μm | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | CSD17313 | Single | 1 | 5A | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.3V | 2.4W Ta 17W Tc | 5A | 57A | 0.042Ohm | 17 pF | 18 mJ | N-Channel | 340pF @ 15V | 30m Ω @ 4A, 8V | 1.8V @ 250μA | 5A Ta | 2.7nC @ 4.5V | 3V 8V | +10V, -8V | |||||||||||||||||||||||||||||||||||||||||||||
| DMTH6016LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmth6016lps13-datasheets-2098.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 37.1A | 60V | 3W Ta 37.5W Tc | N-Channel | 864pF @ 30V | 16m Ω @ 20A, 10V | 2.5V @ 250μA | 10.6A Ta 37.1A Tc | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7698 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdms7698-datasheets-2127.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 26 Weeks | 74mg | No SVHC | 8 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 29W | 1 | FET General Purpose Power | R-PDSO-F5 | 9 ns | 3ns | 3 ns | 20 ns | 22A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.5W Ta 29W Tc | MO-240AA | 50A | 29 mJ | 30V | N-Channel | 1605pF @ 15V | 2 V | 10m Ω @ 13.5A, 10V | 3V @ 250μA | 13.5A Ta 22A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| DMP45H21DHE-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp45h21dhe13-datasheets-2161.pdf | TO-261-4, TO-261AA | 23 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 450V | 12.5W Tc | P-Channel | 1003pF @ 25V | 21 Ω @ 300mA, 10V | 5V @ 250μA | 600mA Tc | 4.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM230N06PQ56 RLG | Taiwan Semiconductor Corporation | $4.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm230n06pq56rlg-datasheets-1420.pdf | 8-PowerTDFN | 32 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 83W Tc | N-Channel | 1680pF @ 20V | 23m Ω @ 20A, 10V | 2.5V @ 250μA | 44A Tc | 28nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J207FE,LF | Toshiba Semiconductor and Storage | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | 6 | No | 1 | 15 ns | 14 ns | 1.4A | 20V | 30V | 500mW Ta | P-Channel | 137pF @ 15V | 251m Ω @ 650mA, 10V | 2.6V @ 1mA | 1.4A Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8457DB-T1-E1 | Vishay Siliconix | $2.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8457dbt1e1-datasheets-2199.pdf | 4-UFBGA | 21 Weeks | Unknown | 15mOhm | 4 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | -10.2A | 12V | -900mV | 1.1W Ta 2.7W Tc | P-Channel | 2900pF @ 6V | 19m Ω @ 3A, 4.5V | 700mV @ 250μA | 93nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2028USS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmn2028uss13-datasheets-2001.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 16 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | ESD PROTECTION, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.56W | 1 | FET General Purpose Powers | 11.67 ns | 12.49ns | 12.33 ns | 35.89 ns | 9.8A | 12V | SILICON | SWITCHING | 1V | 1.56W Ta | 5.6A | 0.02Ohm | 20V | N-Channel | 1000pF @ 10V | 20m Ω @ 9.4A, 4.5V | 1.3V @ 250μA | 7.3A Ta | 11.6nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| RQ6E050AJTCR | ROHM Semiconductor | $0.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/rohmsemiconductor-rq6e050ajtcr-datasheets-1938.pdf | SOT-23-6 Thin, TSOT-23-6 | 16 Weeks | EAR99 | not_compliant | 30V | 950mW Ta | N-Channel | 520pF @ 15V | 35m Ω @ 5A, 4.5V | 1.5V @ 1mA | 5A Ta | 4.7nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB406EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sib406edkt1ge3-datasheets-1256.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | 3 | 14 Weeks | 95.991485mg | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | 40 | 1.95W | 1 | FET General Purpose Powers | S-XDSO-N3 | 5 ns | 12ns | 12 ns | 15 ns | 5.1A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.95W Ta 10W Tc | 6A | 20V | N-Channel | 350pF @ 10V | 46m Ω @ 3.9A, 4.5V | 1.4V @ 250μA | 6A Tc | 12nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SSN1N45BTA | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-ssn1n45bta-datasheets-2035.pdf | 450V | 500mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Lead Free | 3 | 30 Weeks | 240mg | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | BOTTOM | Single | 900mW | 1 | FET General Purpose Power | 7.5 ns | 21ns | 21 ns | 23 ns | 500mA | 50V | SILICON | SWITCHING | 900mW Ta | 0.5A | 8.5 pF | 450V | N-Channel | 240pF @ 25V | 4.25 Ω @ 250mA, 10V | 3.7V @ 250μA | 500mA Tc | 8.5nC @ 10V | 10V | ±50V | ||||||||||||||||||||||||||||||||||||||||||||
| NTHS5443T1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-nths5443t1g-datasheets-1976.pdf | -20V | -3.6A | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 2 Weeks | 8 | ACTIVE (Last Updated: 18 hours ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Other Transistors | 8.5 ns | 14ns | 14 ns | 38 ns | 4.9A | 12V | SILICON | SWITCHING | 20V | 1.3W Ta | 0.065Ohm | -20V | P-Channel | 65m Ω @ 3.6A, 4.5V | 600mV @ 250μA | 3.6A Ta | 12nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| NVTFS4C25NWFTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvtfs4c25ntag-datasheets-3303.pdf | 8-PowerWDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 15 hours ago) | yes | not_compliant | e3 | Tin (Sn) | FET General Purpose Power | 22.1A | Single | 30V | 3W Ta 14.3W Tc | N-Channel | 500pF @ 15V | 17m Ω @ 10A, 10V | 2.2V @ 250μA | 10.1A Ta 22.1A Tc | 10.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6368 | Alpha & Omega Semiconductor Inc. | $1.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 16 Weeks | 8-DFN (5x6) | 820pF | 52A | 30V | 6.2W Ta 27W Tc | N-Channel | 820pF @ 15V | 6.1mOhm @ 20A, 10V | 2.2V @ 250μA | 25A Ta 52A Tc | 13nC @ 10V | 6.1 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C423NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-nvmfs5c423nlt1g-datasheets-1851.pdf | 8-PowerTDFN | Lead Free | 38 Weeks | No SVHC | 8 | ACTIVE, NOT REC (Last Updated: 13 hours ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 12 ns | 72ns | 8.4 ns | 28 ns | 150A | 20V | 40V | 2V | 3.7W Ta 83W Tc | N-Channel | 3100pF @ 20V | 2m Ω @ 50A, 10V | 2V @ 250μA | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3010LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn3010lfg7-datasheets-1873.pdf | 8-PowerVDFN | 3.35mm | 850μm | 3.35mm | Lead Free | 23 Weeks | 72.007789mg | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | Single | 4.5 ns | 19.6ns | 10.7 ns | 31 ns | 30A | 20V | 900mW Ta | 30V | N-Channel | 2075pF @ 15V | 8.5m Ω @ 18A, 10V | 2.5V @ 250μA | 11A Ta 30A Tc | 37nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4927NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntmfs4927nt1g-datasheets-2546.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | Single | 20.8W | 1 | FET General Purpose Power | 9.2 ns | 25.5ns | 4.4 ns | 14 ns | 38A | 20V | SILICON | DRAIN | SWITCHING | 920mW Ta 20.8W Tc | 7.9A | 30V | N-Channel | 913pF @ 15V | 7.3m Ω @ 30A, 10V | 2.2V @ 250μA | 7.9A Ta 38A Tc | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| DMP1245UFCL-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp1245ufcl7-datasheets-1905.pdf | 6-PowerUFDFN | 3 | 17 Weeks | No SVHC | 6 | EAR99 | Gold | No | e4 | DUAL | 6 | 1 | Single | 1 | Other Transistors | R-PDSO-N3 | 15.2 ns | 33.11ns | 217.64 ns | 219.4 ns | 6.6A | 8V | SILICON | DRAIN | SWITCHING | 12V | 613mW Ta | 0.029Ohm | -12V | P-Channel | 1357.4pF @ 10V | 29m Ω @ 4A, 4.5V | 950mV @ 250μA | 6.6A Ta | 26.1nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI8461DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8461dbt2e1-datasheets-1707.pdf | 4-XFBGA, CSPBGA | Lead Free | 4 | 15 Weeks | Unknown | 100mOhm | 4 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 1 | Single | 30 | 780mW | 1 | Other Transistors | 15 ns | 25ns | 10 ns | 35 ns | -3.7A | 8V | SILICON | SWITCHING | 20V | -1V | 780mW Ta 1.8W Tc | 2.5A | -20V | P-Channel | 610pF @ 10V | 100m Ω @ 1.5A, 4.5V | 1V @ 250μA | 24nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| RQ1C065UNTR | ROHM Semiconductor | $1.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-SMD, Flat Lead | Lead Free | 8 | 20 Weeks | yes | EAR99 | e2 | Tin/Copper (Sn/Cu) | DUAL | 260 | 8 | 10 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F8 | 6.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 700mW Ta | 26A | 0.027Ohm | N-Channel | 870pF @ 10V | 22m Ω @ 6.5A, 4.5V | 1V @ 1mA | 6.5A Ta | 11nC @ 4.5V | 1.5V 4.5V | ±10V |
