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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| CTLDM7590 TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2014 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-ctldm7590tr-datasheets-0812.pdf | 3-XFDFN | 3 | EAR99 | compliant | 8541.21.00.95 | YES | BOTTOM | NO LEAD | 1 | R-PBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 125mW Ta | 0.14A | 5Ohm | P-Channel | 10pF @ 15V | 5 Ω @ 100mA, 4.5V | 1V @ 250μA | 140mA Ta | 0.5nC @ 4.5V | 1.2V 4.5V | 8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN30H4D0L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn30h4d0l7-datasheets-0866.pdf | TO-236-3, SC-59, SOT-23-3 | 23 Weeks | DMN30H4 | SOT-23 | 187.3pF | 250mA | 300V | 310mW Ta | N-Channel | 187.3pF @ 25V | 4Ohm @ 300mA, 10V | 3V @ 250μA | 250mA Ta | 7.6nC @ 10V | 4 Ω | 2.7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH3484-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-mch3484tlw-datasheets-0407.pdf | 3-SMD, Flat Lead | Lead Free | 7 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | Tin | not_compliant | 8.9 ns | 49ns | 57 ns | 63 ns | 4.5A | 5V | 20V | 1W Ta | N-Channel | 630pF @ 10V | 40m Ω @ 2A, 2.5V | 800mV @ 1mA | 4.5A Ta | 11nC @ 2.5V | 0.9V 2.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M156-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m156100ex-datasheets-0403.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 9.3A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 36W Tc | 37A | 0.156Ohm | 9.6 mJ | N-Channel | 695pF @ 25V | 150m Ω @ 5A, 10V | 2.1V @ 1mA | 9.3A Tc | 7.4nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP80N04S2L-03 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-ss9011hbu-datasheets-4164.pdf | TO-220-3 | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | MATTE TIN | NO | SINGLE | 3 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 300W Tc | TO-220AB | 80A | 320A | 0.0045Ohm | 810 mJ | N-Channel | 7.93pF @ 25V | 3.4m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 213nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RF4E070GNTR | ROHM Semiconductor | $1.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 8-PowerUDFN | Lead Free | 6 | 20 Weeks | 8 | EAR99 | DUAL | NO LEAD | 260 | 1 | Single | 10 | 1 | S-PDSO-N6 | 5.8 ns | 4ns | 2.8 ns | 16.5 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 7A | 0.03Ohm | 30V | N-Channel | 220pF @ 15V | 21.4m Ω @ 7A, 10V | 2.5V @ 250μA | 7A Ta | 4.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPN95R1K2P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipn95r1k2p7atma1-datasheets-9989.pdf | TO-261-3 | 18 Weeks | 950V | 7W Tc | N-Channel | 478pF @ 400V | 1.2 Ω @ 2.7A, 10V | 3.5V @ 140μA | 6A Tc | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ5C025TPTL | ROHM Semiconductor | $0.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-96 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 700mW Ta | P-Channel | 630pF @ 10V | 95m Ω @ 2.5A, 4.5V | 2V @ 1mA | 2.5A Ta | 7nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH6351-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-mch6351tlw-datasheets-0454.pdf | 6-SMD, Flat Leads | Lead Free | 2 Weeks | 7.512624mg | 6 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | 6 | 1 | Single | 12.3 ns | 89ns | 122 ns | 260 ns | 9A | 10V | 12V | 1.5W Ta | -12V | P-Channel | 2200pF @ 6V | 16.9m Ω @ 4.5A, 4.5V | 9A Ta | 20.5nC @ 4.5V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD13306W |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 6-UFBGA, DSBGA | 1.5mm | 1mm | 1.8mm | Lead Free | 6 | 6 Weeks | 6 | ACTIVE (Last Updated: 1 week ago) | yes | 2mm | EAR99 | ULTRA LOW RESISTANCE | Copper, Silver, Tin | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | CSD13306 | Single | 1 | 7 ns | 11ns | 8 ns | 20 ns | 3.5A | 10V | SILICON | SWITCHING | 12V | 12V | 1.9W Ta | 0.0155Ohm | 294 pF | N-Channel | 1370pF @ 6V | 10.2m Ω @ 1.5A, 4.5V | 1.3V @ 250μA | 3.5A Ta | 11.2nC @ 4.5V | 2.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
| RQ5E030AJTCL | ROHM Semiconductor | $0.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | SC-96 | 3 | 20 Weeks | EAR99 | not_compliant | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1W Tc | 3A | 0.075Ohm | N-Channel | 240pF @ 15V | 75m Ω @ 3A, 4.5V | 1.5V @ 1mA | 3A Ta | 2.1nC @ 4.5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUZ21 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-buz21-datasheets-0561.pdf | TO-220-3 | 3 | no | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | TO-220AB | 19A | 75A | 0.1Ohm | N-Channel | 1.3pF @ 25V | 85m Ω @ 13A, 10V | 4V @ 1mA | 21A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT36M1LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt36m1lps13-datasheets-0524.pdf | 8-PowerTDFN | 5 | 22 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.6W Ta | 16A | 100A | 0.0098Ohm | 31 mJ | N-Channel | 1155pF @ 15V | 6m Ω @ 20A, 10V | 3V @ 250μA | 65A Tc | 16.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RF6E045AJTCR | ROHM Semiconductor | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 6-SMD, Flat Leads | 6 | 16 Weeks | 6 | EAR99 | Copper, Tin | not_compliant | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | 15 ns | 15ns | 10 ns | 40 ns | 4.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1W Tc | 0.0335Ohm | N-Channel | 900pF @ 15V | 23.7m Ω @ 4.5A, 4.5V | 1.5V @ 1mA | 4.5A Ta | 8.1nC @ 4.5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7805TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf7805trpbf-datasheets-9622.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 100A | 0.011Ohm | N-Channel | 11m Ω @ 7A, 4.5V | 3V @ 250μA | 13A Ta | 31nC @ 5V | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQT7N10TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqt7n10tf-datasheets-0642.pdf | -100V | -1A | TO-261-4, TO-261AA | 6.7mm | 1.7mm | 3.7mm | Lead Free | 4 | 17 Weeks | 188mg | No SVHC | 350mOhm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2W | 1 | FET General Purpose Power | R-PDSO-G4 | 7 ns | 24ns | 19 ns | 13 ns | 1.7A | 25V | SILICON | DRAIN | SWITCHING | 4V | 2W Tc | 6.8A | 50 mJ | 100V | N-Channel | 250pF @ 25V | 350m Ω @ 850mA, 10V | 4V @ 250μA | 1.7A Tc | 7.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| RQ5A025ZPTL | ROHM Semiconductor | $0.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-96 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 12V | 760mW Ta | P-Channel | 1350pF @ 6V | 61m Ω @ 2.5A, 4.5V | 1V @ 1mA | 2.5A Ta | 13nC @ 4.5V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2318DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2318dst1e3-datasheets-7122.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 45MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 5 ns | 12ns | 15 ns | 20 ns | 3A | 20V | SILICON | SWITCHING | 3V | 750mW Ta | 3A | 40V | N-Channel | 540pF @ 20V | 3 V | 45m Ω @ 3.9A, 10V | 3V @ 250μA | 3A Ta | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRLR3114ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irlr3114ztrpbf-datasheets-0268.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | No SVHC | 4.9MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 140ns | 50 ns | 33 ns | 130mA | 16V | SILICON | DRAIN | SWITCHING | 1V | 140W Tc | TO-252AA | 42A | 500A | 260 mJ | 40V | N-Channel | 3810pF @ 25V | 1 V | 4.9m Ω @ 42A, 10V | 2.5V @ 100μA | 42A Tc | 56nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||
| FDD6680 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdw2504p-datasheets-2946.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.3W Ta 56W Tc | 12A | 100A | 0.01Ohm | 180 mJ | N-Channel | 1.23pF @ 15V | 10m Ω @ 12A, 10V | 3V @ 250μA | 12A Ta 46A Tc | 18nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDS7088SN3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdt461n-datasheets-4930.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta | 21A | 60A | 0.004Ohm | N-Channel | 3.23pF @ 15V | 4m Ω @ 21A, 10V | 3V @ 1mA | 21A Ta | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI4778DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4778dyt1e3-datasheets-0263.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 15 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.4W | 1 | 15 ns | 50ns | 10 ns | 20 ns | 8A | 16V | SILICON | SWITCHING | 2.4W Ta 5W Tc | 8A | 0.023Ohm | 25V | N-Channel | 680pF @ 13V | 23m Ω @ 7A, 10V | 2.2V @ 250μA | 8A Tc | 18nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| FDP15N65 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdpf3860tydtu-datasheets-5368.pdf | TO-220-3 | 3 | yes | FAST SWITCHING | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 250W Tc | TO-220AB | 16A | 60A | 0.44Ohm | 637 mJ | N-Channel | 3.095pF @ 25V | 440m Ω @ 7.5A, 10V | 5V @ 250μA | 15A Tc | 63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N04S403ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipd90n04s403atma1-datasheets-0165.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 16 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 14 ns | 11ns | 15 ns | 90A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 94W Tc | 185 mJ | N-Channel | 5260pF @ 25V | 3.2m Ω @ 90A, 10V | 4V @ 53μA | 90A Tc | 66.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDU8770 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdw2511nz-datasheets-2148.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 115W Tc | 35A | 407A | 0.0055Ohm | 113 mJ | N-Channel | 3.72pF @ 13V | 4m Ω @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 73nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ665-DL-1EX | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TA | Bulk | 3 (168 Hours) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263-2 | 100V | 65W Tc | P-Channel | 4.2pF @ 20V | 77mOhm @ 14A, 10V | 27A Ta | 74nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB25N33TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb6n70tm-datasheets-5115.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | FAST SWITCHING | unknown | YES | SINGLE | GULL WING | 8 | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 330V | 330V | 3.1W Ta 250W Tc | 25A | 100A | 0.23Ohm | 370 mJ | N-Channel | 2.01pF @ 25V | 230m Ω @ 12.5A, 10V | 5V @ 250μA | 25A Tc | 75nC @ 15V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R280E6FKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipw65r280e6fksa1-datasheets-0340.pdf | TO-247-3 | PG-TO247-3 | 650V | 104W Tc | N-Channel | 950pF @ 100V | 280mOhm @ 4.4A, 10V | 3.5V @ 440μA | 13.8A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2165N-EL-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hat2165nele-datasheets-0342.pdf | 8-PowerSOIC (0.154, 3.90mm Width) | 8-LFPAK-iV | 30V | 30W Tc | N-Channel | 5.18pF @ 10V | 3.6mOhm @ 27.5A, 10V | 55A Ta | 33nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP35N15G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntp35n15g-datasheets-0344.pdf | TO-220-3 | TO-220AB | 150V | 2W Ta 178W Tj | N-Channel | 3.2pF @ 25V | 50mOhm @ 18.5A, 10V | 4V @ 250μA | 37A Ta | 100nC @ 10V | 10V | ±20V |
