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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AO3409L | Alpha & Omega Semiconductor Inc. | $0.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-236-3, SC-59, SOT-23-3 | compliant | 30V | 1.4W Ta | P-Channel | 370pF @ 15V | 130m Ω @ 2.6A, 10V | 3V @ 250μA | 2.6A Ta | 9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4407AL_102 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-SOIC (0.154, 3.90mm Width) | 30V | 3.1W Ta | P-Channel | 2600pF @ 15V | 11m Ω @ 12A, 20V | 3V @ 250μA | 12A Ta | 39nC @ 10V | 6V 20V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP04N80C3XK | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineon-spp04n80c3xk-datasheets-7472.pdf | TO-220-3 | 3 | 3 | AVALANCHE RATED, HIGH VOLTAGE | SINGLE | 1 | 25 ns | 15ns | 12 ns | 65 ns | 4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 63W Tc | TO-220AB | 4A | 12A | 170 mJ | N-Channel | 570pF @ 100V | 1.3 Ω @ 2.5A, 10V | 3.9V @ 240μA | 4A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDMS9409L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms9409lf085-datasheets-4755.pdf | 8-PowerTDFN | 172.8mg | LIFETIME (Last Updated: 4 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 40V | 100W Tj | N-Channel | 3360pF @ 20V | 2.8m Ω @ 65A, 10V | 3V @ 250μA | 65A Tc | 70nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AO3404_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-236-3, SC-59, SOT-23-3 | 30V | 1.4W Ta | N-Channel | 310pF @ 15V | 31m Ω @ 5A, 10V | 2.4V @ 250μA | 5A Ta | 6.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM42N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh50n20-datasheets-1852.pdf | TO-204AE | 2 | yes | EAR99 | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 300W Tc | 42A | 168A | 0.06Ohm | N-Channel | 4400pF @ 25V | 60m Ω @ 21A, 10V | 4V @ 4mA | 42A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| DMP3013SFK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP3056LVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp3056l7-datasheets-0604.pdf | 30V | 1.38W | P-Channel | 642pF @ 25V | 50m Ω @ 6A, 10V | 2.1V @ 250μA | 4.3A Ta | 11.8nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R041C6UNSAWNX6SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR798DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/vishaysiliconix-sir798dpt1ge3-datasheets-4673.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | Unknown | 8 | EAR99 | Tin | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-C5 | 17 ns | 11ns | 9 ns | 43 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1V | 83W Tc | 0.00205Ohm | N-Channel | 5050pF @ 15V | 2.05 Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 130nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| IXTM10P60 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD04N60C3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spd04n60c3-datasheets-4728.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | AVALANCHE RATED | compliant | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 50W Tc | TO-252AA | 4.5A | 13.5A | 0.95Ohm | 130 mJ | N-Channel | 490pF @ 25V | 950m Ω @ 2.8A, 10V | 3.9V @ 200μA | 4.5A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| AO3403L | Alpha & Omega Semiconductor Inc. | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | TO-236-3, SC-59, SOT-23-3 | 30V | 1.4W Ta | P-Channel | 500pF @ 15V | 130m Ω @ 2.6A, 10V | 1.4V @ 250μA | 2.6A Ta | 5.3nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO3415L_108 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-236-3, SC-59, SOT-23-3 | 20V | 1.4W Ta | P-Channel | 1450pF @ 10V | 43m Ω @ 4A, 4.5V | 1V @ 250μA | 4A Ta | 17.2nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMPDM202PH BK | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmpdm202phbk-datasheets-4773.pdf | SOT-23-3 Flat Leads | 20V | 350mW Ta | P-Channel | 800pF @ 10V | 88m Ω @ 1.2A, 5V | 1.4V @ 250μA | 2.3A Ta | 12nC @ 5V | 2.5V 5V | 12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPLU300N04S4R7XTMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2013 | 8-PowerSFN | 8 | EAR99 | ULTRA LOW RESISTANCE | AEC-Q101 | YES | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 429W Tc | 300A | 1200A | 0.00076Ohm | 750 mJ | N-Channel | 22945pF @ 25V | 0.76m Ω @ 100A, 10V | 4V @ 230μA | 300A Tc | 287nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTM11N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-204AA, TO-3 | 2 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 300W Tc | 11A | 44A | 0.95Ohm | N-Channel | 4500pF @ 25V | 950m Ω @ 5.5A, 10V | 4.5V @ 250μA | 11A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AO3402L | Alpha & Omega Semiconductor Inc. | $0.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2006 | TO-236-3, SC-59, SOT-23-3 | 30V | 1.4W Ta | N-Channel | 390pF @ 15V | 55m Ω @ 4A, 10V | 1.4V @ 250μA | 4A Ta | 4.34nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO3401L_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-236-3, SC-59, SOT-23-3 | 30V | 1.4W Ta | P-Channel | 954pF @ 15V | 50m Ω @ 4.2A, 10V | 1.3V @ 250μA | 4.2A Ta | 9.4nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO3401L | Alpha & Omega Semiconductor Inc. | $0.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | TO-236-3, SC-59, SOT-23-3 | 30V | 1.4W Ta | P-Channel | 954pF @ 15V | 50m Ω @ 4.2A, 10V | 1.3V @ 250μA | 4.2A Ta | 9.4nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM35N30 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh35n30-datasheets-7656.pdf | TO-204AE | 2 | yes | EAR99 | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 300W Tc | 35A | 140A | 0.1Ohm | N-Channel | 4800pF @ 25V | 100m Ω @ 17.5A, 10V | 4V @ 4mA | 35A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTM1712 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC642P-F085P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdc642pf085-datasheets-5364.pdf | SOT-23-6 Thin, TSOT-23-6 | 13 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | 20V | 1.2W Ta | P-Channel | 630pF @ 10V | 65m Ω @ 4A, 4.5V | 1.5V @ 250μA | 4A Ta | 9nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP90R500C3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp90r500c3-datasheets-4691.pdf | TO-220-3 | Lead Free | 3 | No SVHC | 3 | yes | Halogen Free | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 156W | 1 | FET General Purpose Power | Not Qualified | 70 ns | 20ns | 25 ns | 400 ns | 11A | 30V | 900V | SILICON | SWITCHING | 156W Tc | TO-220AB | 24A | 0.5Ohm | 900V | N-Channel | 1700pF @ 100V | 3 V | 500m Ω @ 6.6A, 10V | 3.5V @ 740μA | 11A Tc | 68nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| RJK0353DPA-WS#J0B | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerVDFN | 30V | 40W Ta | N-Channel | 2180pF @ 10V | 5.2m Ω @ 17.5A, 10V | 2.5V @ 1mA | 35A Ta | 14nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM12N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixth12n100-datasheets-0595.pdf | TO-204AA, TO-3 | 2 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 300W Tc | 12A | 48A | N-Channel | 4000pF @ 25V | 1.05 Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFM11N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n80-datasheets-2163.pdf | TO-204AA, TO-3 | 2 | yes | AVALANCHE RATED | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 300W Tc | 11A | 44A | 0.95Ohm | N-Channel | 4200pF @ 25V | 950m Ω @ 5.5A, 10V | 4.5V @ 4mA | 11A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NVF2201NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/onsemiconductor-mmbf2201nt1g-datasheets-5158.pdf | 5-TSSOP, SC-70-5, SOT-353 | Lead Free | 4 Weeks | 3 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | YES | NOT SPECIFIED | 3 | 1 | Single | NOT SPECIFIED | 150mW | FET General Purpose Powers | 2.5 ns | 2.5ns | 800 ps | 15 ns | 300mA | 20V | 150mW Ta | 20V | N-Channel | 45pF @ 5V | 1 Ω @ 300mA, 10V | 2.4V @ 250μA | 300mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| AON6758_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aon6758103-datasheets-4427.pdf | 8-VDFN Exposed Pad | 30V | 4.1W Ta 41W Tc | N-Channel | 1975pF @ 15V | 3.6m Ω @ 20A, 10V | 2.4V @ 250μA | 27A Ta 32A Tc | 40nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMPDM303NH BK | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmpdm303nhbk-datasheets-4638.pdf | SOT-23-3 Flat Leads | 30V | 350mW Ta | N-Channel | 590pF @ 10V | 40m Ω @ 1.8A, 4.5V | 1.2V @ 250μA | 3.6A Ta | 13nC @ 4.5V | 2.5V 4.5V | 12V |
