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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMS2085LSD-13 | Diodes Incorporated | $1.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dms2085lsd13-datasheets-4587.pdf | 8-SOIC (0.154, 3.90mm Width) | 73.992255mg | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 3.3 ns | 3ns | 6.8 ns | 14 ns | 3.3A | 20V | 1.1W Ta | 20V | P-Channel | 353pF @ 15V | 85m Ω @ 3.05A, 10V | 2.2V @ 250μA | 3.3A Ta | 7.8nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NVB25P06T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/onsemiconductor-ntb25p06t4g-datasheets-8205.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 2 Weeks | 3 | ACTIVE, NOT REC (Last Updated: 6 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | AEC-Q101 | YES | GULL WING | 3 | Single | 1 | Other Transistors | R-PSSO-G2 | 14 ns | 72ns | 190 ns | 43 ns | 27.5A | 15V | SILICON | DRAIN | SWITCHING | N-CHANNEL | 60V | 60V | 120W Tj | 80A | 0.082Ohm | 600 mJ | P-Channel | 1680pF @ 25V | 82m Ω @ 25A, 10V | 4V @ 250μA | 27.5A Ta | 50nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||
| SPP80N06S08NK | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SIPMOS® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-220-3 | 55V | 300W Tc | N-Channel | 3660pF @ 25V | 8m Ω @ 80A, 10V | 4V @ 240μA | 80A Tc | 187nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C450NLWFAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c450nlaft3g-datasheets-4440.pdf | 8-PowerTDFN, 5 Leads | 40V | 3.7W Ta 68W Tc | N-Channel | 2100pF @ 20V | 2.8m Ω @ 40A, 10V | 2V @ 250μA | 27A Ta 110A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS8449-F085P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds8449f085p-datasheets-4496.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | LAST SHIPMENTS (Last Updated: 1 week ago) | 40V | 5W Ta | N-Channel | 760pF @ 20V | 29m Ω @ 7.6A, 10V | 3V @ 250μA | 7.6A Ta | 11nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2049ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2049engrt-datasheets-4363.pdf | Die | Die | 40V | N-Channel | 805pF @ 20V | 5mOhm @ 15A, 5V | 2.5V @ 6mA | 16A Ta | 7.6nC @ 5V | 5V | +6V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R190C7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r190c7atma2-datasheets-5928.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | D2PAK (TO-263AB) | 650V | 72W Tc | N-Channel | 1150pF @ 400V | 190mOhm @ 5.7A, 10V | 4V @ 290μA | 13A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT130SM70B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt130sm70b-datasheets-4566.pdf | TO-247-3 | compliant | 700V | 556W Tc | N-Channel | 3950pF @ 700V | 45m Ω @ 60A, 20V | 2.4V @ 1mA | 110A Tc | 220nC @ 20V | 20V | +25V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP08N80C3XK | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-220-3 | 3 | yes | AVALANCHE RATED, HIGH VOLTAGE | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 800V | 800V | 104W Tc | TO-220AB | 8A | 24A | 0.65Ohm | 340 mJ | N-Channel | 1100pF @ 100V | 650m Ω @ 5.1A, 10V | 3.9V @ 470μA | 8A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPW65R045C7300XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-247-3 | 650V | 227W Tc | N-Channel | 4.34nF @ 400V | 45m Ω @ 24.9A, 10V | 4V @ 1.25mA | 46A Tc | 93nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT35SM70S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt35sm70s-datasheets-4513.pdf | TO-247-3 | 700V | 35A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANSR2N7261U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/601 | Surface Mount | -55°C~150°C | 1 (Unlimited) | MOSFET (Metal Oxide) | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jansr2n7261u-datasheets-4515.pdf | 18-CLCC | 18-ULCC (9.14x7.49) | 100V | 25W Tc | N-Channel | 185mOhm @ 8A, 12V | 4V @ 1mA | 8A Tc | 50nC @ 12V | 12V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSL302SNH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsl302snh6327xtsa1-datasheets-4490.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 12 Weeks | 6 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 6.4 ns | 2.8ns | 1.9 ns | 13.7 ns | 7.1A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | 2W Ta | 28A | 0.025Ohm | 30 mJ | N-Channel | 750pF @ 15V | 25m Ω @ 7.1A, 10V | 2V @ 30μA | 7.1A Ta | 6.6nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| DMP2040UVT-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 32 Weeks | e3 | Matte Tin (Sn) | 260 | 30 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5SM170S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | SiCFET (Silicon Carbide) | Non-RoHS Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 1700V | 52W Tc | N-Channel | 325pF @ 1000V | 1.2 Ω @ 2A, 20V | 3.2V @ 500μA | 4.6A Tc | 29nC @ 20V | 20V | +25V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2110U-7 | Diodes Incorporated | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp2110u7-datasheets-4534.pdf | TO-236-3, SC-59, SOT-23-3 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 20V | 800mW Ta | P-Channel | 443pF @ 10V | 80m Ω @ 2.8A, 4.5V | 1V @ 250μA | 3.5A Ta | 6nC @ 4.5V | 2.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP3056LVT-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp3056l7-datasheets-0604.pdf | 30V | 1.38W | P-Channel | 642pF @ 25V | 50m Ω @ 6A, 10V | 2.1V @ 250μA | 4.3A Ta | 11.8nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPI08N80C3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi08n80c3-datasheets-4541.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 6 Weeks | yes | AVALANCHE RATED, HIGH VOLTAGE | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 104W Tc | 8A | 24A | 0.65Ohm | 340 mJ | N-Channel | 1100pF @ 100V | 650m Ω @ 5.1A, 10V | 3.9V @ 470μA | 8A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| APT5SM170B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5sm170b-datasheets-4545.pdf | TO-247-3 | EAR99 | 1700V | 65W Tc | N-Channel | 249pF @ 1000V | 1.25 Ω @ 2.5A, 20V | 3.2V @ 500μA | 5A Tc | 21nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMPDM203NH BK | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmpdm203nhbk-datasheets-4547.pdf | SOT-23-3 Flat Leads | 20V | 350mW Ta | N-Channel | 395pF @ 10V | 50m Ω @ 1.6A, 4.5V | 1.2V @ 250μA | 3.2A Ta | 10nC @ 4.5V | 2.5V 4.5V | 12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2035UVT-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp2035uvt13-datasheets-4488.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 6 | 40 | 1 | Other Transistors | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2W Ta | 5.2A | 24A | 0.045Ohm | P-Channel | 2400pF @ 10V | 35m Ω @ 4A, 4.5V | 1.5V @ 250μA | 7.2A Ta | 23.1nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| AON7400AL_102 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-SMD, Flat Lead | 30V | 3.1W Ta 25W Tc | N-Channel | 1380pF @ 15V | 7.5m Ω @ 20A, 10V | 2.5V @ 250μA | 15A Ta 40A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2036UVT-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | e3 | Matte Tin (Sn) | 260 | 30 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4476G | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 30V | 3.7W Ta | N-Channel | 1200pF @ 15V | 10.5m Ω @ 15A, 10V | 2.5V @ 250μA | 15A Ta | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANSR2N7380 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/614 | Through Hole | -55°C~150°C TJ | Tray | Not Applicable | MOSFET (Metal Oxide) | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jansr2n7380-datasheets-4489.pdf | TO-257-3 | TO-257 | 100V | 2W Ta 75W Tc | N-Channel | 200mOhm @ 14.4A, 12V | 4V @ 1mA | 14.4A Tc | 40nC @ 12V | 12V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7400AL_103 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-SMD, Flat Lead | 30V | 3.1W Ta 25W Tc | N-Channel | 1380pF @ 15V | 7.5m Ω @ 20A, 10V | 2.5V @ 250μA | 15A Ta 40A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPS03N60C3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-sps03n60c3-datasheets-4458.pdf | TO-251-3 Stub Leads, IPak | 3 | 10 Weeks | Unknown | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 38W | 1 | FET General Purpose Power | Not Qualified | 7 ns | 3ns | 12 ns | 64 ns | 3.2A | 20V | 600V | 650V | SILICON | 38W Tc | TO-251AA | 9.6A | 100 mJ | 650V | N-Channel | 400pF @ 25V | 3 V | 1.4 Ω @ 2A, 10V | 3.9V @ 135μA | 3.2A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IPI045N10N3GXK | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 3 | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 214W Tc | 100A | 400A | 0.0045Ohm | N-Channel | 8410pF @ 50V | 4.5m Ω @ 100A, 10V | 3.5V @ 150μA | 137A Tc | 117nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPC60R190P6X7SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT12N65_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aot12n65001-datasheets-4459.pdf | TO-220-3 | 650V | 278W Tc | N-Channel | 2150pF @ 25V | 720m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 48nC @ 10V | 10V | ±30V |
