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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFM10N90 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n90-datasheets-4489.pdf | TO-204AA, TO-3 | 2 | yes | AVALANCHE RATED | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900V | 900V | 300W Tc | 10A | 40A | N-Channel | 4200pF @ 25V | 1.1 Ω @ 5A, 10V | 4.5V @ 4mA | 10A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPP90R500C3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp90r500c3-datasheets-4691.pdf | TO-220-3 | Lead Free | 3 | No SVHC | 3 | yes | Halogen Free | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 156W | 1 | FET General Purpose Power | Not Qualified | 70 ns | 20ns | 25 ns | 400 ns | 11A | 30V | 900V | SILICON | SWITCHING | 156W Tc | TO-220AB | 24A | 0.5Ohm | 900V | N-Channel | 1700pF @ 100V | 3 V | 500m Ω @ 6.6A, 10V | 3.5V @ 740μA | 11A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| RJK0353DPA-WS#J0B | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerVDFN | 30V | 40W Ta | N-Channel | 2180pF @ 10V | 5.2m Ω @ 17.5A, 10V | 2.5V @ 1mA | 35A Ta | 14nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM12N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixth12n100-datasheets-0595.pdf | TO-204AA, TO-3 | 2 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 300W Tc | 12A | 48A | N-Channel | 4000pF @ 25V | 1.05 Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFM11N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n80-datasheets-2163.pdf | TO-204AA, TO-3 | 2 | yes | AVALANCHE RATED | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 300W Tc | 11A | 44A | 0.95Ohm | N-Channel | 4200pF @ 25V | 950m Ω @ 5.5A, 10V | 4.5V @ 4mA | 11A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NVF2201NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/onsemiconductor-mmbf2201nt1g-datasheets-5158.pdf | 5-TSSOP, SC-70-5, SOT-353 | Lead Free | 4 Weeks | 3 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | YES | NOT SPECIFIED | 3 | 1 | Single | NOT SPECIFIED | 150mW | FET General Purpose Powers | 2.5 ns | 2.5ns | 800 ps | 15 ns | 300mA | 20V | 150mW Ta | 20V | N-Channel | 45pF @ 5V | 1 Ω @ 300mA, 10V | 2.4V @ 250μA | 300mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AON6758_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aon6758103-datasheets-4427.pdf | 8-VDFN Exposed Pad | 30V | 4.1W Ta 41W Tc | N-Channel | 1975pF @ 15V | 3.6m Ω @ 20A, 10V | 2.4V @ 250μA | 27A Ta 32A Tc | 40nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMPDM303NH BK | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmpdm303nhbk-datasheets-4638.pdf | SOT-23-3 Flat Leads | 30V | 350mW Ta | N-Channel | 590pF @ 10V | 40m Ω @ 1.8A, 4.5V | 1.2V @ 250μA | 3.6A Ta | 13nC @ 4.5V | 2.5V 4.5V | 12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM15N60 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh15n60-datasheets-7594.pdf | TO-204AE | 2 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 300W Tc | 15A | 60A | 0.05Ohm | N-Channel | 4500pF @ 25V | 500m Ω @ 7.5A, 10V | 4.5V @ 4mA | 15A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| JANSR2N7381 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/614 | Through Hole | -55°C~150°C TJ | Tray | Not Applicable | MOSFET (Metal Oxide) | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jansr2n7381-datasheets-4648.pdf | TO-257-3 | OBSOLETE (Last Updated: 1 month ago) | TO-257 | 200V | 2W Ta 75W Tc | N-Channel | 490mOhm @ 9.4A, 12V | 4V @ 1mA | 9.4A Tc | 50nC @ 12V | 12V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD4243-F085P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdd4243f085p-datasheets-4581.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | 40V | 50W Tc | P-Channel | 1550pF @ 20V | 44m Ω @ 6.7A, 10V | 3V @ 250μA | 14A Tc | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANSR2N7262U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/601 | Surface Mount | -55°C~150°C | 1 (Unlimited) | MOSFET (Metal Oxide) | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jansr2n7262u-datasheets-4586.pdf | 18-CLCC | 18-ULCC (9.14x7.49) | 200V | 25W Tc | N-Channel | 364mOhm @ 5.5A, 12V | 4V @ 1mA | 5.5A Tc | 50nC @ 12V | 12V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMS2085LSD-13 | Diodes Incorporated | $1.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dms2085lsd13-datasheets-4587.pdf | 8-SOIC (0.154, 3.90mm Width) | 73.992255mg | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 3.3 ns | 3ns | 6.8 ns | 14 ns | 3.3A | 20V | 1.1W Ta | 20V | P-Channel | 353pF @ 15V | 85m Ω @ 3.05A, 10V | 2.2V @ 250μA | 3.3A Ta | 7.8nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| JANSR2N7268U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/603 | Surface Mount | -55°C~150°C | Tray | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jansr2n7268u-datasheets-4593.pdf | 3-SMD, No Lead | Yes | U1 (SMD-1) | 34A | 20V | 100V | 150W Tc | N-Channel | 70mOhm @ 34A, 12V | 4V @ 1mA | 34A Tc | 160nC @ 12V | 12V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG4407SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmg4407sss13-datasheets-4594.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 7 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | 40 | 1 | Other Transistors | 11.3 ns | 15.4ns | 22 ns | 38 ns | 9.9A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.45W Ta | P-Channel | 2246pF @ 15V | 11m Ω @ 12A, 20V | 3V @ 250μA | 9.9A Ta | 20.5nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||
| DMP2040UVT-7 | Diodes Incorporated | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 22 Weeks | e3 | Matte Tin (Sn) | 260 | 30 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS4C310NWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV65XP/MIR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmv65xpmir-datasheets-4608.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | compliant | IEC-60134 | YES | DUAL | GULL WING | 3 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 480mW Ta 4.17W Tc | TO-236AB | 3.9A | 0.076Ohm | P-Channel | 744pF @ 20V | 74m Ω @ 2.8A, 4.5V | 900mV @ 250μA | 2.8A Ta | 7.7nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| PMV48XP/MIR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmv48xpmir-datasheets-4610.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | LOGIC LEVEL COMPATIBLE | compliant | IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 510mW Ta 4.15W Tc | TO-236AB | 3.5A | 0.055Ohm | P-Channel | 1nF @ 10V | 55m Ω @ 2.4A, 4.5V | 1.25V @ 250μA | 3.5A Ta | 11nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| AON6756_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-VDFN Exposed Pad | 30V | 7.3W Ta 83W Tc | N-Channel | 2796pF @ 15V | 2.4m Ω @ 20A, 10V | 2.4V @ 250μA | 36A Tc | 64nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6370_002 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aon6370001-datasheets-4422.pdf | 8-VDFN Exposed Pad | 30V | 6.2W Ta 26W Tc | N-Channel | 840pF @ 15V | 7.2m Ω @ 20A, 10V | 2.2V @ 250μA | 23A Ta 47A Tc | 13nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP06N80C3XK | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-220-3 | 3 | 3 | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 83W Tc | TO-220AB | 6A | 18A | 0.9Ohm | N-Channel | 785pF @ 100V | 900m Ω @ 3.8A, 10V | 3.9V @ 250μA | 6A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AOT12N60_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aot12n60001-datasheets-4617.pdf | TO-220-3 | 600V | 278W Tc | N-Channel | 2100pF @ 25V | 550m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANSR2N7389U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/630 | Surface Mount | Surface Mount | -55°C~150°C | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jansr2n7389u-datasheets-4571.pdf | 18-CLCC | 18 | Yes | 25W | 1 | 18-ULCC (9.14x7.49) | 6.5A | 20V | 100V | 25W Tc | P-Channel | 350mOhm @ 6.5A, 12V | 4V @ 1mA | 6.5A Tc | 45nC @ 12V | 12V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8445-F085P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdd8445f085-datasheets-3406.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 40 Weeks | LIFETIME (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | 40V | 79W Ta | N-Channel | 4050pF @ 25V | 8.7m Ω @ 50A, 10V | 4V @ 250μA | 50A Ta | 59nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD526_DELTA | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aod526delta-datasheets-4572.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30V | 2.5W Ta 50W Tc | N-Channel | 1550pF @ 15V | 5m Ω @ 20A, 10V | 2.4V @ 250μA | 50A Tc | 33nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANSR2N7389 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/630 | Through Hole | Through Hole | -55°C~150°C | Tray | Not Applicable | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jansr2n7389-datasheets-4623.pdf | TO-205AF Metal Can | 3 | Yes | TO-205AF (TO-39) | 6.5A | 20V | 100V | 25W Tc | P-Channel | 350mOhm @ 6.5A, 12V | 4V @ 1mA | 6.5A Tc | 45nC @ 12V | 12V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MCB60I1200TZ | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-mcb60i1200tz-datasheets-4574.pdf | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF8T50P_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aotf8t50p001-datasheets-4636.pdf | TO-220-3 Full Pack | 500V | 38W Tc | N-Channel | 905pF @ 100V | 810m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 19nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD5T40P_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aod5t40p101-datasheets-4576.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 400V | 52W Tc | N-Channel | 273pF @ 100V | 1.45 Ω @ 1A, 10V | 5V @ 250μA | 3.9A Tc | 9nC @ 10V | 10V | ±30V |
