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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Min) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPS70N10S3L-12 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS50R520CPAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips50r520cpakma1-datasheets-4341.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 500V | 66W Tc | N-Channel | 680pF @ 100V | 520m Ω @ 3.8A, 10V | 3.5V @ 250μA | 7.1A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| AUXHMF1404ZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R600E6UNSAWNX6SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMPB25ENEAX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | 6-UDFN Exposed Pad | 30V | 2.08W Ta | N-Channel | 607pF @ 15V | 24m Ω @ 7.2A, 10V | 2.5V @ 250μA | 7.2A Ta | 19nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| APT130SM70J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | SiCFET (Silicon Carbide) | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt130sm70j-datasheets-4350.pdf | SOT-227-4, miniBLOC | compliant | 700V | 273W Tc | N-Channel | 3950pF @ 700V | 45m Ω @ 60A, 20V | 2.4V @ 1mA | 78A Tc | 270nC @ 20V | 20V | +25V, -10V | ||||||||||||||||||||||||||||||||||||||||||||
| PMPB50ENEAX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | 6-UDFN Exposed Pad | 30V | 1.9W Ta | N-Channel | 271pF @ 15V | 43m Ω @ 5.1A, 10V | 2.5V @ 250μA | 5.1A Ta | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS4C310NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD418G | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30V | 2.5W Ta 50W Tc | N-Channel | 1380pF @ 15V | 7.5m Ω @ 20A, 10V | 2.5V @ 250μA | 13.5A Ta 36A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K35MFV,L3F | Toshiba Semiconductor and Storage | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | SOT-723 | 3 | 16 Weeks | 3 | EAR99 | No | DUAL | FLAT | 3 | 1 | 115 ns | 300 ns | 180mA | 10V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | 150mW Ta | 0.18A | 4Ohm | N-Channel | 9.5pF @ 3V | 3 Ω @ 50mA, 4V | 1V @ 1mA | 180mA Ta | 1.2V 4V | ±10V | |||||||||||||||||||||||||
| PMPB100ENEAX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 6-UDFN Exposed Pad | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD5N50M | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 500V | 104W Tc | N-Channel | 670pF @ 25V | 1.6 Ω @ 2.5A, 10V | 4.5V @ 250μA | 5A Tc | 14nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXRFSM18N50 | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SMPD | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 16-BESOP (0.790, 20.11mm Width), 15 Leads, Exposed Pad | 500V | 835W | N-Channel | 2250pF @ 400V | 340m Ω @ 9.5A, 20V | 6.5V @ 250μA | 19A Tc | 42nC @ 10V | 20V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R280E6X7SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS05N70AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R380C6X7SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMJ70H601SK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmj70h601sk313-datasheets-4333.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 9 Weeks | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 125W Tc | 8A | 15A | 0.6Ohm | 86 mJ | N-Channel | 686pF @ 50V | 600m Ω @ 2.1A, 10V | 4V @ 250μA | 8A Tc | 20.9nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| IPC60R950C6UNSAWNX6SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R099C6UNSAWNX6SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW20N60C3E8177FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R125C6UNSAWNX6SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R520E6UNSAWNX6SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R125C6E8191XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r125c6e8191xksa1-datasheets-4329.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R380E6UNSAWNX6SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ITD50N04S4L04ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 4 | EAR99 | AEC-Q101 | YES | SINGLE | GULL WING | 2 | R-PSSO-G4 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | TO-252 | 50A | 200A | 0.004Ohm | 210 mJ | ||||||||||||||||||||||||||||||||||||||||
| IPS70R2K0CEE8211 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips70r2k0cee8211-datasheets-4335.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R190E6X7SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R160C6UNSAWNX6SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N07S405ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n07s405aksa1-datasheets-4322.pdf | 2 | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | -55°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 75V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 80A | 320A | 0.0052Ohm | 240 mJ | ||||||||||||||||||||||||||||||||||||
| SPD07N60C3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd07n60c3-datasheets-4336.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 10 Weeks | yes | AVALANCHE RATED | compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 83W Tc | TO-252AA | 7.3A | 21.9A | 0.6Ohm | 230 mJ | N-Channel | 790pF @ 25V | 600m Ω @ 4.6A, 10V | 3.9V @ 350μA | 7.3A Tc | 27nC @ 10V | 10V | ±20V |
