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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 2SJ655 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sj655-datasheets-7757.pdf | TO-220-3 Full Pack | TO-220ML | 100V | 2W Ta 25W Tc | P-Channel | 2.09pF @ 20V | 136mOhm @ 6A, 10V | 12A Ta | 41nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS8848NZ | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdp6670al-datasheets-5533.pdf | 8-PowerTDFN | 5 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | NO LEAD | 260 | 8 | 30 | 1 | COMMERCIAL | R-XDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 2.5W Ta 104W Tc | 22.8A | 90A | 0.0031Ohm | 480 mJ | N-Channel | 8.075pF @ 20V | 3.1m Ω @ 22.8A, 10V | 3V @ 250μA | 22.8A Ta 49A Tc | 152nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC042N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-bsc042n03msgatma1-datasheets-7771.pdf | 8-PowerTDFN | 5 | 39 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5W Ta 57W Tc | 17A | 372A | 0.0054Ohm | 40 mJ | N-Channel | 4300pF @ 15V | 4.2m Ω @ 30A, 10V | 2V @ 250μA | 17A Ta 93A Tc | 55nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPD15N06S2L64ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd15n06s2l64atma2-datasheets-7550.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 47W Tc | 19A | 76A | 0.085Ohm | 43 mJ | N-Channel | 354pF @ 25V | 64m Ω @ 13A, 10V | 2V @ 14μA | 19A Tc | 13nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC50N04S5L5R5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipc50n04s5l5r5atma1-datasheets-7761.pdf | 8-PowerTDFN | 3 | 16 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 42W Tc | 50A | 200A | 0.0079Ohm | 30 mJ | N-Channel | 1209pF @ 25V | 5.5m Ω @ 25A, 10V | 2V @ 13μA | 50A Tc | 23nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS59N10DPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfs59n10dpbf-datasheets-7666.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 100V | 3.8W Ta 200W Tc | N-Channel | 2.45pF @ 25V | 25mOhm @ 35.4A, 10V | 5.5V @ 250μA | 59A Tc | 114nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC059N04LS6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc059n04ls6atma1-datasheets-7850.pdf | 8-PowerTDFN | 26 Weeks | 40V | 3W Ta 38W Tc | N-Channel | 830pF @ 20V | 5.9m Ω @ 50A, 10V | 2.3V @ 250μA | 17A Ta 49A Tc 59A Tc | 9.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7410TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf7410trpbf-datasheets-7668.pdf | -12V | -16A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 7MOhm | 8 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 2.5W | 1 | 150°C | 13 ns | 12ns | 200 ns | 271 ns | -16A | 8V | -12V | SILICON | SWITCHING | 12V | 6.3 mm | -400mV | 2.5W Ta | 145 ns | 65A | -12V | P-Channel | 8676pF @ 10V | -900 mV | 7m Ω @ 16A, 4.5V | 900mV @ 250μA | 16A Ta | 91nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| STV270N4F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stv270n4f3-datasheets-7160.pdf | PowerSO-10 Exposed Bottom Pad | Lead Free | 10 | 12 Weeks | 1.5MOhm | 10 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 250 | STV270 | 10 | Single | 30 | 300W | 1 | FET General Purpose Power | 25 ns | 180ns | 45 ns | 110 ns | 270A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 40V | N-Channel | 7500pF @ 25V | 1.5m Ω @ 80A, 10V | 4V @ 250μA | 270A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STL35N15F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl35n15f3-datasheets-7368.pdf | 8-PowerVDFN | Lead Free | 5 | 40MOhm | 8 | EAR99 | No | DUAL | STL35 | 8 | 80W | 1 | FET General Purpose Powers | R-PDSO-N5 | 14 ns | 11ns | 20 ns | 57 ns | 33A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80W Tc | 7A | 150V | N-Channel | 1905pF @ 25V | 40m Ω @ 3.5A, 10V | 4V @ 250μA | 33A Tc | 49.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4177-DL-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-2sk4177dl1e-datasheets-7498.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 19 Weeks | No SVHC | 2 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | Tin | not_compliant | e3 | YES | GULL WING | 2 | Single | 80W | 1 | FET General Purpose Powers | 12 ns | 37ns | 59 ns | 152 ns | 2A | 20V | SILICON | DRAIN | 1500V | 80W Tc | 2A | 4A | N-Channel | 380pF @ 30V | 13 Ω @ 1A, 10V | 2A Ta | 37.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NVB150N65S3F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvb150n65s3f-datasheets-7525.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | yes | 650V | 192W | N-Channel | 1999pF @ 400V | 150m Ω @ 12A, 10V | 5V @ 540μA | 24A | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB33N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp33n60dm2-datasheets-1270.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STB33N | NOT SPECIFIED | 24A | 600V | 4V | 190W Tc | N-Channel | 1870pF @ 100V | 130m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 43nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86150ET100 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdms86150et100-datasheets-7467.pdf | 8-PowerTDFN | Lead Free | 12 Weeks | 56.5mg | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 260 | 1 | Single | NOT SPECIFIED | 18 ns | 8.3ns | 6 ns | 28 ns | 128A | 20V | 3.3W Ta 187W Tc | 100V | N-Channel | 4065pF @ 50V | 4.85m Ω @ 16A, 10V | 4V @ 250μA | 16A Ta 128A Tc | 62nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTBS2D7N06M7 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntbs2d7n06m7-datasheets-9948.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | yes | not_compliant | e3 | Tin (Sn) | 60V | 176W Tj | N-Channel | 6655pF @ 30V | 2.7m Ω @ 80A, 10V | 4V @ 250μA | 110A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86255ET150 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms86255et150-datasheets-7581.pdf | 8-PowerTDFN | Lead Free | 5 | 12 Weeks | 56.5mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | NO LEAD | 260 | 1 | Single | NOT SPECIFIED | 1 | R-PDSO-N5 | 21 ns | 4.5ns | 6.2 ns | 28 ns | 63A | 20V | SILICON | DRAIN | SWITCHING | 150V | 3.3W Ta 136W Tc | MO-240AA | 276A | N-Channel | 4480pF @ 75V | 12.4m Ω @ 10A, 10V | 4V @ 250μA | 10A Ta 63A Tc | 63nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NILMS4501NR2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nilms4501nr2-datasheets-7589.pdf | 4-PowerDFN | 4 | yes | e0 | TIN LEAD | YES | BOTTOM | NO LEAD | 240 | 8 | 30 | 1 | COMMERCIAL | R-PBCC-N4 | SILICON | CURRENT MIRROR WITH BUILT-IN DIODE | DRAIN | SWITCHING | 24V | 24V | 1.4W Ta | 9.5A | 14A | 0.016Ohm | 50 mJ | N-Channel | 1.5pF @ 6V | 13m Ω @ 6A, 10V | 2V @ 250μA | 9.5A Ta | 25nC @ 10V | Current Sensing | 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6689S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds6689s-datasheets-7615.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 16A | 0.0054Ohm | N-Channel | 3.29pF @ 15V | 5.4m Ω @ 16A, 10V | 3V @ 1mA | 16A Ta | 78nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB23NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw23nm50n-datasheets-1950.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 26 Weeks | No SVHC | 190mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB23N | 4 | Single | 30 | 125W | 1 | FET General Purpose Power | R-PSSO-G2 | 6.6 ns | 19ns | 29 ns | 71 ns | 17A | 25V | SILICON | SWITCHING | 3V | 125W Tc | 68A | 254 mJ | 500V | N-Channel | 1330pF @ 50V | 190m Ω @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 45nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| FDB075N15A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp075n15af102-datasheets-1061.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 12 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | Single | 333W | 1 | FET General Purpose Power | R-PSSO-G2 | 28 ns | 37ns | 21 ns | 62 ns | 130A | 20V | SILICON | DRAIN | SWITCHING | 333W Tc | 522A | 0.0075Ohm | 588 mJ | 150V | N-Channel | 7350pF @ 75V | 7.5m Ω @ 100A, 10V | 4V @ 250μA | 130A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| HUFA75344S3ST | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76413dk8t-datasheets-6085.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 285W Tc | 75A | 0.008Ohm | N-Channel | 3.2pF @ 25V | 8m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 210nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR220NTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr220ntrpbf-datasheets-9596.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 43W Tc | TO-252AA | 5A | 20A | 0.6Ohm | 46 mJ | N-Channel | 300pF @ 25V | 600m Ω @ 2.9A, 10V | 4V @ 250μA | 5A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STH290N4F6-6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sth290n4f66ag-datasheets-7237.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | STH290 | NOT SPECIFIED | 1 | R-PSSO-G6 | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 300W Tc | 720A | 0.0017Ohm | N-Channel | 7380pF @ 25V | 1.7m Ω @ 45A, 10V | 4V @ 250μA | 180A Tc | 115nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB29S50L | Alpha & Omega Semiconductor Inc. | $2.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 29A | 500V | 357W Tc | N-Channel | 1312pF @ 100V | 150m Ω @ 14.5A, 10V | 3.9V @ 250μA | 29A Tc | 26.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB110N65S3HF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb110n65s3hf-datasheets-7445.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 13 Weeks | yes | not_compliant | e3 | Tin (Sn) | 650V | 240W Tc | N-Channel | 2635pF @ 400V | 110m Ω @ 15A, 10V | 5V @ 740μA | 30A Tc | 62nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM65N20-30-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sum65n2030e3-datasheets-7452.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 5.08mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 30mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 260 | 4 | 1 | Single | 30 | 3.75W | 1 | FET General Purpose Powers | 175°C | R-PSSO-G2 | 24 ns | 220ns | 200 ns | 45 ns | 65A | 20V | 200V | SILICON | SWITCHING | 2V | 3.75W Ta 375W Tc | 130 ns | 200V | N-Channel | 5100pF @ 25V | 4 V | 30m Ω @ 30A, 10V | 4V @ 250μA | 65A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF644STRLPBF | Vishay Siliconix | $2.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf644spbf-datasheets-3712.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.3nF | 11 ns | 24ns | 49 ns | 53 ns | 14A | 20V | 250V | 3.1W Ta 125W Tc | 280mOhm | N-Channel | 1300pF @ 25V | 280mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 68nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS4310Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfs4310z-datasheets-7328.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 11 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 250W Tc | 120A | 560A | 0.006Ohm | 130 mJ | N-Channel | 6860pF @ 50V | 6m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE808DF-T1-E3 | Vishay Siliconix | $1.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie808dft1e3-datasheets-7343.pdf | 10-PolarPAK® (L) | 6.15mm | 800μm | 5.16mm | Lead Free | 4 | 14 Weeks | No SVHC | 1.6mOhm | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 30 | 125mW | 1 | FET General Purpose Power | R-XDSO-N4 | 25 ns | 55ns | 10 ns | 55 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 2.3V | 5.2W Ta 125W Tc | 220A | N-Channel | 8800pF @ 10V | 1.6m Ω @ 25A, 10V | 3V @ 250μA | 60A Tc | 155nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STD7N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu7n80k5-datasheets-5318.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 17 Weeks | 1.2Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | GULL WING | STD7 | Single | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 11.3 ns | 8.3ns | 20.2 ns | 23.7 ns | 6A | 30V | SILICON | DRAIN | SWITCHING | 800V | 800V | 110W Tc | 6A | 24A | 88 mJ | N-Channel | 360pF @ 100V | 1.2 Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 13.4nC @ 10V | 10V | ±30V |
