Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF7780MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf7780mtrpbf-datasheets-5474.pdf | DirectFET™ Isometric ME | Lead Free | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 89A | 75V | 96W Tc | N-Channel | 6504pF @ 25V | 5.7m Ω @ 53A, 10V | 3.7V @ 150μA | 89A Tc | 186nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXM64P02XTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-zxm64p02xta-datasheets-6288.pdf | -20V | -3.5A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3.1mm | 950μm | 3.1mm | Lead Free | 8 | 17 Weeks | 139.989945mg | No SVHC | 90mOhm | 8 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.8W | 1 | Other Transistors | 5.6 ns | 12.3ns | 12.3 ns | 45.5 ns | 3.5A | 12V | SILICON | SWITCHING | 20V | 1.1W Ta | -20V | P-Channel | 900pF @ 15V | 90m Ω @ 2.4A, 4.5V | 700mV @ 250μA | 3.5A Ta | 6.9nC @ 4.5V | 2.7V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| RRH090P03GZETB | ROHM Semiconductor | $1.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rrh090p03gzetb-datasheets-6005.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 650mW Ta | 9A | 0.0154Ohm | P-Channel | 3000pF @ 10V | 15.4m Ω @ 9A, 10V | 2.5V @ 1mA | 9A Ta | 56nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6619TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/infineontechnologies-irf6619-datasheets-5955.pdf | 20V | 30A | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | No SVHC | 5 | No | 89W | 1 | DIRECTFET™ MX | 5.04nF | 21 ns | 71ns | 9.3 ns | 25 ns | 24A | 20V | 20V | 20V | 1.55V | 2.8W Ta 89W Tc | 3mOhm | 20V | N-Channel | 5040pF @ 10V | 1.55 V | 2.2mOhm @ 30A, 10V | 2.45V @ 250μA | 30A Ta 150A Tc | 57nC @ 4.5V | 2.2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| VN3205N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vn3205n8g-datasheets-6319.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 6 Weeks | 52.786812mg | 4 | EAR99 | HIGH INPUT IMPEDANCE | e3 | Matte Tin (Sn) - annealed | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | Not Qualified | R-PSSO-F3 | 10 ns | 15ns | 15 ns | 25 ns | 1.5A | 20V | SILICON | DRAIN | SWITCHING | 1.6W Ta | 8A | 0.3Ohm | 30 pF | 50V | N-Channel | 300pF @ 25V | 50ns | 300m Ω @ 1.5A, 10V | 2.4V @ 10mA | 1.5A Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| DMT8008LFG-7 | Diodes Incorporated | $1.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt8008lfg7-datasheets-6134.pdf | 8-PowerVDFN | 23 Weeks | 80V | 1W Ta 23.5W Tc | N-Channel | 2254pF @ 40V | 6.9m Ω @ 20A, 10V | 2.5V @ 1mA | 16A Ta 48A Tc | 37.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7905-40AIE,127 | Nexperia USA Inc. | $1.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk790540aie127-datasheets-6179.pdf | TO-220-5 | Lead Free | 12 Weeks | 5 | Tin | No | Single | 272W | 1 | TO-220-5 | 6.808nF | 35 ns | 115ns | 110 ns | 155 ns | 155A | 20V | 40V | 40V | 272W Tc | 5mOhm | 40V | N-Channel | 5000pF @ 25V | 5mOhm @ 50A, 10V | 4V @ 1mA | 75A Tc | 127nC @ 10V | Current Sensing | 4.1 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH1400ANH,L1Q | Toshiba Semiconductor and Storage | $3.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-PowerVDFN | 5 | 12 Weeks | 8 | unknown | DUAL | FLAT | Single | 48W | 1 | S-PDSO-F5 | 5.6ns | 6.5 ns | 22 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 1.6W Ta 48W Tc | 42A | 91A | 0.0136Ohm | 46 mJ | 100V | N-Channel | 1900pF @ 50V | 13.6m Ω @ 12A, 10V | 4V @ 300μA | 24A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR416DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir416dpt1ge3-datasheets-6188.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 14 Weeks | 506.605978mg | 8 | 1 | Single | 5.2W | 1 | PowerPAK® SO-8 | 3.35nF | 28 ns | 85ns | 40 ns | 42 ns | 50A | 20V | 40V | 5.2W Ta 69W Tc | 3.1mOhm | 40V | N-Channel | 3350pF @ 20V | 3.8mOhm @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 90nC @ 10V | 3.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD9409-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdd9409f085-datasheets-6196.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 45 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | Tin | not_compliant | e3 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | 23 ns | 22ns | 15 ns | 41 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 150W Tc | N-Channel | 3130pF @ 25V | 3.2m Ω @ 80A, 10V | 4V @ 250μA | 90A Tc | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| RD3U060CNTL1 | ROHM Semiconductor | $1.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rd3u060cntl1-datasheets-6204.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 52W Tc | 6A | 24A | 0.53Ohm | 2.62 mJ | N-Channel | 840pF @ 25V | 530m Ω @ 3A, 10V | 5V @ 1mA | 6A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4483EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sq4483eyt1ge3-datasheets-6213.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 7W Tc | MS-012AA | 30A | 0.0085Ohm | 770 pF | P-Channel | 4500pF @ 15V | 8.5m Ω @ 10A, 10V | 2.5V @ 250μA | 30A Tc | 113nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD16413Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD16413 | 8 | Single | 3.1W | 1 | FET General Purpose Power | 9.1 ns | 15.9ns | 5.7 ns | 10.7 ns | 100A | 16V | 25V | SILICON | DRAIN | SWITCHING | 1.6V | 3.1W Ta | 24A | 0.0056Ohm | 25V | N-Channel | 1780pF @ 12.5V | 1.6 V | 3.9m Ω @ 24A, 10V | 1.9V @ 250μA | 24A Ta 100A Tc | 11.7nC @ 4.5V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||
| SI4378DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4378dyt1ge3-datasheets-6038.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 15 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | 85 ns | 65ns | 65 ns | 140 ns | 25A | 12V | SILICON | SWITCHING | 1.8V | 1.6W Ta | 0.0027Ohm | 20V | N-Channel | 8500pF @ 10V | 2.7m Ω @ 25A, 4.5V | 1.8V @ 250μA | 19A Ta | 55nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| IRF6619TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6619-datasheets-5955.pdf | 20V | 30A | DirectFET™ Isometric MX | Lead Free | No SVHC | 7 | 2.8W | 1 | DIRECTFET™ MX | 5.04nF | 71ns | 9.3 ns | 25 ns | 24A | 20V | 20V | 20V | 2.45V | 2.8W Ta 89W Tc | 29 ns | 1.65Ohm | 20V | N-Channel | 5040pF @ 10V | 2.45 V | 2.2mOhm @ 30A, 10V | 2.45V @ 250μA | 30A Ta 150A Tc | 57nC @ 4.5V | 2.2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TK3R1P04PL,RQ | Toshiba Semiconductor and Storage | $0.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 40V | 87W Tc | N-Channel | 4670pF @ 20V | 3.1m Ω @ 29A, 10V | 2.4V @ 500μA | 58A Tc | 60nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3440DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3440dvt1ge3-datasheets-7527.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 375mOhm | 6 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 6 | 1 | Single | 1.14W | 1 | 8 ns | 10ns | 15 ns | 20 ns | 1.5A | 20V | SILICON | SWITCHING | 150V | 4V | 1.14W Ta | N-Channel | 4 V | 375m Ω @ 1.5A, 10V | 4V @ 250μA | 1.2A Ta | 8nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFR9310TRPBF | Vishay Siliconix | $1.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9310pbf-datasheets-8583.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 7Ohm | 3 | Tin | No | 18A | 400V | 1 | Single | 50W | 1 | D-Pak | 270pF | 11 ns | 10ns | 24 ns | 25 ns | 1.8A | 20V | 400V | 50W Tc | 7Ohm | P-Channel | 270pF @ 25V | -2 V | 7Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 13nC @ 10V | 7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TPH1R712MD,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8-SOP Advance (5x5) | 20V | 78W Tc | P-Channel | 10900pF @ 10V | 1.7mOhm @ 30A, 4.5V | 1.2V @ 1mA | 60A Tc | 182nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD45P4LLF6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std45p4llf6ag-datasheets-6120.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STD45 | NOT SPECIFIED | 50A | 40V | 58W Tc | P-Channel | 3525pF @ 25V | 15m Ω @ 25A, 10V | 2.5V @ 250μA | 50A Tc | 65.5nC @ 10V | 4.5V 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7806ADN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si7806adnt1e3-datasheets-6105.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 13 ns | 10ns | 10 ns | 33 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.5W Ta | 9A | 40A | N-Channel | 11m Ω @ 14A, 10V | 3V @ 250μA | 9A Ta | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK560P60Y,RQ | Toshiba Semiconductor and Storage | $1.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | DPAK | 600V | 60W Tc | N-Channel | 380pF @ 300V | 560mOhm @ 3.5A, 10V | 4V @ 240μA | 7A Tc | 14.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4100DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4100dyt1e3-datasheets-6999.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 10 ns | 12ns | 10 ns | 15 ns | 4.4A | 20V | SILICON | SWITCHING | 2V | 2.5W Ta 6W Tc | 0.063Ohm | 100V | N-Channel | 600pF @ 50V | 63m Ω @ 4.4A, 10V | 4.5V @ 250μA | 6.8A Tc | 20nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| RRH090P03TB1 | ROHM Semiconductor | $1.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | EAR99 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 650mW Ta | 9A | 0.0154Ohm | P-Channel | 3000pF @ 10V | 15.4m Ω @ 9A, 10V | 2.5V @ 1mA | 9A Ta | 30nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD4LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std4ln80k5-datasheets-6007.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STD4L | NOT SPECIFIED | 800V | 60W Tc | N-Channel | 122pF @ 100V | 2.6 Ω @ 1A, 10V | 5V @ 100μA | 3A Tc | 3.7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCD5N60TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fcd5n60tmws-datasheets-3372.pdf | 600V | 4.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 260.37mg | No SVHC | 950MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | FCD5N60 | Single | 54W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 40ns | 22 ns | 47 ns | 4.6A | 30V | SILICON | DRAIN | SWITCHING | 5V | 54W Tc | 600V | N-Channel | 600pF @ 25V | 950m Ω @ 2.3A, 10V | 5V @ 250μA | 4.6A Tc | 16nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| RS1G180MNTB | ROHM Semiconductor | $1.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/rohmsemiconductor-rs1g180mntb-datasheets-6026.pdf | 8-PowerTDFN | Lead Free | 5 | 20 Weeks | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PDSO-F5 | 18A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3W Ta 30W Tc | 72A | 0.0092Ohm | N-Channel | 1293pF @ 20V | 7m Ω @ 18A, 10V | 2.5V @ 1mA | 18A Ta 80A Tc | 19.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL12N3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl12n3llh5-datasheets-5811.pdf | 8-PowerVDFN | Lead Free | 52 Weeks | 9MOhm | 8 | EAR99 | No | STL12 | Single | 50W | 9.3 ns | 14.5ns | 4.5 ns | 22.7 ns | 12A | 22V | 2W Ta 50W Tc | 30V | N-Channel | 1500pF @ 25V | 9m Ω @ 6A, 10V | 2.5V @ 250μA | 12A Tc | 12nC @ 4.5V | 4.5V 10V | ±22V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5476DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si5476dut1ge3-datasheets-5799.pdf | 8-PowerVDFN | 3mm | 750μm | 1.9mm | Lead Free | 3 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 8 | 1 | Single | 40 | 3.1W | 1 | FET General Purpose Power | R-XDSO-N3 | 10 ns | 15ns | 10 ns | 22 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 3V | 3.1W Ta 31W Tc | 25A | 0.034Ohm | 60V | N-Channel | 1100pF @ 30V | 34m Ω @ 4.6A, 10V | 3V @ 250μA | 12A Tc | 32nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| MMSF3P02HDR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-mmsf3p02hdr2g-datasheets-5878.pdf | -20V | -3A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 27 Weeks | No SVHC | 75MOhm | 8 | ACTIVE, NOT REC (Last Updated: 1 day ago) | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 8 | Single | 40 | 2.5W | 1 | Other Transistors | 25 ns | 40ns | 97 ns | 110 ns | 5.6A | 20V | SILICON | SWITCHING | 2.5W Ta | 30A | 567 mJ | -20V | P-Channel | 1400pF @ 16V | 1.5 V | 75m Ω @ 3A, 10V | 2V @ 250μA | 5.6A Ta | 46nC @ 10V | 4.5V 10V | ±20V |
